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27 条记录 (耗时 0.03 秒)

    Optical recording members and method for production thereof
    1.
    发明授权
    Optical recording members and method for production thereof 失效
    光记录元件及其制造方法

    公开(公告)号：US5224090A

    公开(公告)日：1993-06-29

    申请号：US943150

    申请日：1992-09-10

    申请人： Kazuo Umeda ,  Masaaki Asano ,  Minoru Utsumi ,  Takuya Hamaguchi ,  Takeshi Matsumoto ,  Yuji Kondo

    发明人： Kazuo Umeda ,  Masaaki Asano ,  Minoru Utsumi ,  Takuya Hamaguchi ,  Takeshi Matsumoto ,  Yuji Kondo

    IPC分类号： G11B7/0033 ,  G11B7/013 ,  G11B7/24

    CPC分类号： G11B7/24085 ,  G11B7/24 ,  G11B7/0033

    摘要： The optical recording member according to the present invention includes an information recording pattern consisting of high reflectance portions and low reflectance portions formed on a substrate. During reading of information, discrimination of recording information is done by detecting the difference in light reflectance between the above respective portions. In this case, the low reflectance portions are roughened on their surface and have light scattering property, and therefore the difference in light reflectance can be well detected. Further, the method for preparing the optical recording member according to the present invention can be practiced according to relatively simple means of the surface roughening step of the above low reflectance portions and yet according to a precise and rapid method, and therefore it is suitable for bulk production on an industrial scale.

    摘要翻译： PCT No.PCT / JP87 / 00703 Sec。 371日期：1988年9月22日 102（e）日期1988年9月22日PCT提交1987年9月25日PCT公布。 出版物WO88 / 05592 日本1987年7月28日。根据本发明的光学记录元件包括由在基板上形成的高反射率部分和低反射率部分组成的信息记录图案。 在信息读取期间，通过检测上述各部分之间的光反射率的差异来进行记录信息的识别。 在这种情况下，低反射率部分在其表面上变粗糙并且具有光散射性，因此可以很好地检测光反射率的差异。 此外，根据本发明的光学记录元件的制备方法可以根据上述低反射率部分的表面粗糙化步骤的相对简单的手段实现，并且还可以根据精确和快速的方法进行，因此它适用于 批量生产在工业规模。

    Draw type optical recording medium
    2.
    发明授权
    Draw type optical recording medium 失效
    绘图型光学记录介质

    公开(公告)号：US5297132A

    公开(公告)日：1994-03-22

    申请号：US892471

    申请日：1992-06-02

    申请人： Atsushi Takano ,  Masayuki Iijima ,  Kazuo Umeda ,  Kazuo Takahashi ,  Osamu Sasaki ,  Hitoshi Fujii ,  Mitsuru Takeda ,  Masaaki Asano

    发明人： Atsushi Takano ,  Masayuki Iijima ,  Kazuo Umeda ,  Kazuo Takahashi ,  Osamu Sasaki ,  Hitoshi Fujii ,  Mitsuru Takeda ,  Masaaki Asano

    IPC分类号： G11B7/24 ,  G11B7/243 ,  G11B7/253 ,  G11B7/2534 ,  G11B7/257 ,  G11B7/2572

    CPC分类号： G11B7/24 ,  G11B7/243 ,  G11B7/257 ,  G11B2007/24316 ,  G11B2007/2432 ,  G11B2007/2571 ,  G11B7/2534 ,  G11B7/2572

    摘要： The DRAW type optical recording medium which can record optical information by forming information pits in the recording layer by irradiation of an energy beam such as laser beam, and yet can reproduce the information immediately after writing without requiring any step of developing processing after writing of information. The optical recording medium includes a recording layer (3) for forming information pits through the occurrence of physical deformation by irradiation of an energy beam and a sensitizing layer (4) for augmenting the physical deformation in the recording layer (3) laminated on a support (2). By the presence of the sensitizing layer, recording sensitivity is improved and also stability of the medium with lapse of time becomes excellent. Further, due to the presence of the sensitizing layer, the optical recording medium can be a sealed structure and therefore the optical recording medium is lightweight and flexible, and can be made in various forms such as card, sheet, a flexible sheet, and the like.

    摘要翻译： PCT No.PCT / JP87 / 00702 Sec。 371日期1988年6月24日第 102（e）日期1988年6月24日PCT提交1987年9月25日PCT公布。 出版物WO88 / 03310 日期：1988年5月5日。可以通过照射能量束如激光束在记录层中形成信息凹坑来记录光学信息的DRAW型光学记录介质，并且可以在写入之后立即再现信息，而不需要任何步骤 编写信息后开展处理。 光记录介质包括用于通过照射能量束而发生物理变形而形成信息凹坑的记录层（3）和用于增加层叠在支撑体上的记录层（3）中的物理变形的增感层（4） （2）。 通过感光层的存在，提高了记录灵敏度，并且介质随时间的稳定性变得优异。 此外，由于存在感光层，光记录介质可以是密封结构，因此光记录介质重量轻且柔软，并且可以制成各种形式，例如卡，片，柔性片，以及 喜欢。

    Semiconductor device and method for fabricating the same
    4.
    发明申请
    Semiconductor device and method for fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US20070293007A1

    公开(公告)日：2007-12-20

    申请号：US11889231

    申请日：2007-08-10

    申请人： Toyoji Ito ,  Eiji Fujii ,  Kazuo Umeda

    发明人： Toyoji Ito ,  Eiji Fujii ,  Kazuo Umeda

    IPC分类号： H01L21/336

    CPC分类号： H01L27/11502 ,  H01L27/105 ,  H01L27/10852 ,  H01L27/10894 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55 ,  H01L28/57 ,  H01L28/65

    摘要： A semiconductor device includes: a lower hydrogen-barrier film; a capacitor formed on the lower hydrogen-barrier film and including a lower electrode, a capacitive insulating film, and an upper electrode; an interlayer dielectric film formed so as to cover the periphery of the capacitor; and an upper hydrogen-barrier film covering the top and lateral portions of the capacitor. An opening, which exposes the lower hydrogen-barrier film where the lower hydrogen-barrier film is located around the capacitor, and which is tapered and flares upward, is formed in the interlayer dielectric film, and the upper hydrogen-barrier film is formed along the lateral and bottom faces of the opening, and is in contact with the lower hydrogen-barrier film in the opening.

    摘要翻译： 半导体器件包括：下阻氢膜; 形成在下部氢阻挡膜上并具有下部电极，电容绝缘膜和上部电极的电容器; 形成为覆盖电容器周围的层间绝缘膜; 以及覆盖电容器的顶部和侧部的上部氢阻挡膜。 在层间电介质膜中形成开口，该开口暴露出下阻氢膜位于电容器周围并在其间呈锥形并向上凸起的下阻氢膜，上阻氢膜沿着 开口的侧面和底面，并与开口中的下阻氢膜接触。

    Semiconductor device and method for fabricating the same
    6.
    发明授权
    Semiconductor device and method for fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US07550344B2

    公开(公告)日：2009-06-23

    申请号：US11889231

    申请日：2007-08-10

    申请人： Toyoji Ito ,  Eiji Fujii ,  Kazuo Umeda

    发明人： Toyoji Ito ,  Eiji Fujii ,  Kazuo Umeda

    IPC分类号： H01L21/8234

    CPC分类号： H01L27/11502 ,  H01L27/105 ,  H01L27/10852 ,  H01L27/10894 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55 ,  H01L28/57 ,  H01L28/65

    摘要： A semiconductor device includes: a lower hydrogen-barrier film; a capacitor formed on the lower hydrogen-barrier film and including a lower electrode, a capacitive insulating film, and an upper electrode; an interlayer dielectric film formed so as to cover the periphery of the capacitor; and an upper hydrogen-barrier film covering the top and lateral portions of the capacitor. An opening, which exposes the lower hydrogen-barrier film where the lower hydrogen-barrier film is located around the capacitor, and which is tapered and flares upward, is formed in the interlayer dielectric film, and the upper hydrogen-barrier film is formed along the lateral and bottom faces of the opening, and is in contact with the lower hydrogen-barrier film in the opening.

    摘要翻译： 半导体器件包括：下阻氢膜; 形成在下部氢阻挡膜上并具有下部电极，电容绝缘膜和上部电极的电容器; 形成为覆盖电容器周围的层间绝缘膜; 以及覆盖电容器的顶部和侧部的上部氢阻挡膜。 在层间电介质膜中形成开口，该开口暴露出下阻氢膜位于电容器周围并在其间呈锥形并向上凸起的下阻氢膜，上阻氢膜沿着 开口的侧面和底面，并与开口中的下阻氢膜接触。

    Spun yarn-like textured yarns and process for producing same
    7.
    发明授权
    Spun yarn-like textured yarns and process for producing same 失效
    纺纱纱线变形纱线及其制造方法

    公开(公告)号：US4292799A

    公开(公告)日：1981-10-06

    申请号：US85635

    申请日：1979-10-17

    申请人： Yukio Otaki ,  Kazuo Umeda ,  Kiyoshi Nakagawa

    发明人： Yukio Otaki ,  Kazuo Umeda ,  Kiyoshi Nakagawa

    IPC分类号： D02G1/02 ,  D02G3/04 ,  D02G3/24 ,  D02J3/02

    CPC分类号： D02G1/0246 ,  D02G1/0286 ,  Y10S57/908

    摘要： Spun yarn-like textured polyester yarns comprised of two types of polyester multifilament component yarns and having broken filaments, in which textured yarns there is a difference in length between the component yarns, whereby high bulkiness is imparted thereto. The individual filaments of one of the component yarns have a fineness less than those of the other component yarn. The spun yarn-like textured yarns have satisfactory pilling resistance and frosting resistance.The spun yarn-like high bulky textured yarns can be produced by a process comprising doubling two types of undrawn polyester multifilament yarns having different properties through an intertwisting regulative device and simultaneously draw-texturing the doubled undrawn yarns.

    摘要翻译： 由两种类型的聚酯复丝组分纱线组成的具有断裂长丝的纺丝纱状织构化聚酯纱线，其中变形纱线在组分纱线之间的长度差异，从而赋予其高膨松度。 组分纱中的一种的单丝具有小于其它组分纱的细度。 短纤纱状变形纱具有令人满意的起球抗性和耐结霜性。 可以通过包括通过缠结调节装置对具有不同性质的两种类型的未拉伸聚酯复丝纱线进行加倍以及同时拉伸双重未拉伸纱线的方法来制造细纱状高膨松变形纱线。