摘要:
The joining apparatus includes a suction nozzle for holding an electronic component, a board stage for holding a circuit board in opposition to the electronic component, and an excimer ultraviolet lamp placed at an irradiation position between the positioned electronic component and circuit board. In such a joining apparatus, ultraviolet irradiation to Au bumps of the electronic component and ultraviolet irradiation to board electrodes of the circuit board are performed concurrently by the excimer ultraviolet lamp to execute cleaning process of the two metallic portions. Thereafter, ultrasonic vibrations are imparted to the two metallic portions while those metallic portions are kept in contact with each other, by which metal joining between the two metallic portions is fulfilled.
摘要:
The joining apparatus includes a suction nozzle for holding an electronic component, a board stage for holding a circuit board in opposition to the electronic component, and an excimer ultraviolet lamp placed at an irradiation position between the positioned electronic component and circuit board. In such a joining apparatus, ultraviolet irradiation to Au bumps of the electronic component and ultraviolet irradiation to board electrodes of the circuit board are performed concurrently by the excimer ultraviolet lamp to execute a cleaning process of the two metallic portions. Thereafter, ultrasonic vibrations are imparted to the two metallic portions while those metallic portions are kept in contact with each other, by which metal joining between the two metallic portions is fulfilled.
摘要:
In a semiconductor device of the present invention, in order that the contact of electrodes formed on a film substrate with edge parts of a semiconductor element at the time such as when the semiconductor element is mounted thereon may be reliably prevented, in the semiconductor element mounted on at least one surface of the film substrate having the electrodes, an insulating protection part is formed at a desired position of the surface opposed to the electrodes, and the distance between the semiconductor element and the film substrate is set at not less than 10 μm.
摘要:
An LED chip of the present invention has a structure in which an n-type semiconductor layer and a p-type semiconductor layer are successively formed on the lower face of an element substrate, with the p-type semiconductor layer being formed on an area except for an area for an n-electrode. A first n-electrode is formed on the area for the n-electrode and a first p-electrode is formed on the p-type semiconductor layer. A first insulating layer having openings and is formed on the first n-electrode and the first p-electrode, and a second n-electrode and a second p-electrode having virtually the same size are formed on the first insulating layer. With this arrangement, the electrode on the n-type semiconductor layer can be made larger, thereby a mounting process of LED chips onto a circuit board can be executed by using solder at low costs.
摘要:
An electronic element package includes a plate-like sensor substrate with a detector formed thereon, and a plate-like first cover substrate and a plate-like second cover substrate joined directly or indirectly to a top surface and a bottom surface, respectively, of the sensor substrate so that the sensor substrate is located between the first and second cover substrates, the sensor substrate including, a frame surrounding the detector via a space, beams joining the detector to the frame, and an electrode disposed on the frame and electrically connected to the detector, one of the first cover substrate and the second cover substrate having a through-hole which contacts an electrode. The electronic element package enables a reduction in thickness and offers improved reliability.
摘要:
An LED chip of the present invention has a structure in which an n-type semiconductor layer and a p-type semiconductor layer are successively formed on the lower face of an element substrate, with the p-type semiconductor layer being formed on an area except for an area for an n-electrode. A first n-electrode is formed on the area for the n-electrode and a first p-electrode is formed on the p-type semiconductor layer. A first insulating layer having openings and is formed on the first n-electrode and the first p-electrode, and a second n-electrode and a second p-electrode having virtually the same size are formed on the first insulating layer. With this arrangement, the electrode on the n-type semiconductor layer can be made larger, thereby a mounting process of LED chips onto a circuit board can be executed by using solder at low costs.
摘要:
In a semiconductor light emitting device having a matrix of a plurality of bumps composed of one n-bump formed on an n-electrode layer and of a large number of p-bumps formed on p-electrode layers, the occurrence of a faulty junction after mounting can be suppressed by placement of the n-bump at center of the bump array, because the position at the center is most resistant to occurrence of stress after the mounting. Employment of such a configuration of bump array increases reliability of mounting thereof while improving uniformity of light emission intensity in the semiconductor light emitting device having an increased size.
摘要:
An electronic element package includes a plate-like sensor substrate with a detector formed thereon, and a plate-like first cover substrate and a plate-like second cover substrate joined directly or indirectly to a top surface and a bottom surface, respectively, of the sensor substrate so that the sensor substrate is located between the first and second cover substrates, the sensor substrate including, a frame surrounding the detector via a space, beams joining the detector to the frame, and an electrode disposed on the frame and electrically connected to the detector, one of the first cover substrate and the second cover substrate having a through-hole which contacts an electrode. The electronic element package enables a reduction in thickness and offers improved reliability.
摘要:
In a semiconductor light emitting device having a matrix of a plurality of bumps composed of one n-bump formed on an n-electrode layer and of a large number of p-bumps formed on p-electrode layers, occurrence of faulty junction in the n-bump fewer than the p-bumps after mounting can be suppressed by placement of the n-bump at center of the bump array that is most resistant to occurrence of stress after the mounting. Employment of such a configuration of bump array increases reliability of mounting thereof while improving uniformity of light emission intensity in the semiconductor light emitting device having an increased size.
摘要:
In a semiconductor device of the present invention, in order that the contact of electrodes formed on a film substrate with edge parts of a semiconductor element at the time such as when the semiconductor element is mounted thereon may be reliably prevented, in the semiconductor element mounted on at least one surface of the film substrate having the electrodes, an insulating protection part is formed at a desired position of the surface opposed to the electrodes, and the distance between the semiconductor element and the film substrate is set at not less than 10 μm.