公开(公告)号：US06174614B1

公开(公告)日：2001-01-16

申请号：US09178771

申请日：1998-10-26

申请人： Yasuhisa Yushio ,  Hirohiko Nakata ,  Kazutaka Sasaki ,  Masuhiro Natsuhara ,  Motoyuki Tanaka

发明人： Yasuhisa Yushio ,  Hirohiko Nakata ,  Kazutaka Sasaki ,  Masuhiro Natsuhara ,  Motoyuki Tanaka

IPC分类号： B32B1800

CPC分类号： C04B41/009 ,  C04B35/581 ,  C04B41/5116 ,  C04B41/5133 ,  C04B41/52 ,  C04B41/88 ,  C04B41/89 ,  C04B41/5027 ,  C04B41/5074 ,  C04B41/5049 ,  C04B41/5006 ,  C04B41/5072 ,  C04B41/5122 ,  C04B41/522 ,  C04B41/5022

摘要： A sintered aluminum nitride body comprising aluminum nitride as the main component and containing a calcium compound, an ytterbium compound, and a neodymium compound. Due to the use of the above calcium-yttrium-neodymium ternary sintering aid, the sintered aluminum nitride body can be obtained by firing a compact of the raw material powder at a low temperature after degreasing the compact without cracking and has evenness of in color, strength and thermal conductivity. The sintered aluminum nitride body provides an inexpensive, high-quality metallized substrate for electronic parts by forming a high-melting metallizing layer of W and/or Mo. Onto the aluminum nitride body, an Ag metallizing layer including oxides of Zn and Cu or an Ag-Pd metallilzing layer including oxides of B, Pb, Cr and Ca and, if necessary, further an insulating vitreous layer may be formed.

摘要翻译： 一种包含氮化铝作为主要成分并含有钙化合物，镱化合物和钕化合物的烧结氮化铝体。 由于使用了上述的钙 - 钇 - 钕三元烧结助剂，所以可以通过在低密度烧结原料粉末的压实体而不产生裂纹的同时，在低温下烧结原料粉末的粉末，并且具有均匀的颜色， 强度和导热性。 烧结的氮化铝体通过形成W和/或Mo的高熔点金属化层，为电子部件提供廉价的高品质金属化基板。在氮化铝体上，包含Zn和Cu的氧化物的Ag金属化层或 可以形成包含B，Pb，Cr和Ca的氧化物的Ag-Pd金属化层，并且如果需要，还可以形成绝缘玻璃质层。

公开(公告)号：US6122170A

公开(公告)日：2000-09-19

申请号：US343167

申请日：1999-06-29

申请人： Yoshiyuki Hirose ,  Kazutaka Sasaki ,  Mitsuru Shimazu ,  Hirohiko Nakata

发明人： Yoshiyuki Hirose ,  Kazutaka Sasaki ,  Mitsuru Shimazu ,  Hirohiko Nakata

IPC分类号： H01L23/12 ,  H01L23/13 ,  H01L23/373 ,  H01L23/538 ,  H01L25/07 ,  H01L25/18 ,  H05K7/20

CPC分类号： H01L23/5386 ,  C04B35/581 ,  C04B35/584 ,  C04B35/62625 ,  C04B35/634 ,  C04B37/026 ,  H01L23/13 ,  H01L25/072 ,  C04B2235/3208 ,  C04B2235/3225 ,  C04B2235/3873 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/604 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/122 ,  C04B2237/123 ,  C04B2237/366 ,  C04B2237/368 ,  C04B2237/402 ,  C04B2237/405 ,  C04B2237/407 ,  C04B2237/555 ,  C04B2237/72 ,  H01L2924/0002 ,  H01L2924/13055

摘要： A ceramic base plate of aluminum nitride ceramics, for example, as a power module board has a metal layer on a surface of the ceramic base plate at a fixing portion at which the ceramic base plate is fixed onto a heat radiating plate. Further, a metal film is provided entirely on the rear surface of the ceramic base plate. An IGBT chip or the like is fixed onto the ceramic base plate with a conductive layer interposed therebetween, to form a power module board. Therefore, it is possible to avoid the generation of cracks when the ceramic base plate is mechanically fixed onto the heat radiating plate without using solder, and heat radiation from the ceramic base plate to the heat radiating plate can be improved.

摘要翻译： 作为功​​率模块基板的氮化铝陶瓷的陶瓷基板在陶瓷基板的固定部分具有在陶瓷基板的表面上固定有散热板的金属层。 此外，金属膜整体设置在陶瓷基板的后表面上。 IGBT导体等固定在陶瓷基板上，形成电源模块基板。 因此，在不使用焊锡的情况下将陶瓷基板机械地固定在散热板上时，可以避免产生裂缝，能够提高从陶瓷基板向散热板的散热。

公开(公告)号：US5955148A

公开(公告)日：1999-09-21

申请号：US958873

申请日：1997-10-27

申请人： Kouhei Shimoda ,  Kazuya Kamitake ,  Hirohiko Nakata ,  Kazutaka Sasaki ,  Masuhiro Natsuhara ,  Harutoshi Ukegawa

发明人： Kouhei Shimoda ,  Kazuya Kamitake ,  Hirohiko Nakata ,  Kazutaka Sasaki ,  Masuhiro Natsuhara ,  Harutoshi Ukegawa

IPC分类号： C04B35/581 ,  C04B41/50 ,  C04B41/52 ,  C04B41/86 ,  C04B41/87 ,  C04B41/89 ,  H01L21/48 ,  H01L23/15 ,  B05D3/02 ,  B05D3/12

CPC分类号： C04B41/009 ,  C04B35/581 ,  C04B41/5022 ,  C04B41/5063 ,  C04B41/52 ,  C04B41/86 ,  C04B41/87 ,  C04B41/89 ,  H01L21/481 ,  H01L23/15 ,  C04B2111/00301 ,  C04B2111/00844 ,  H01L2924/0002 ,  Y10T428/24413 ,  Y10T428/24479 ,  Y10T428/24942 ,  Y10T428/265 ,  Y10T428/31678

摘要： Aluminium nitride ceramics improved in heat radiation property used as a substrate for integrated circuits and package material, comprising a sintered article consisting mainly of aluminium nitride and having a thermal conductivity higher than 100.multidot.W/m.multidot.K at room temperature and a surface layer consisting mainly of aluminium nitride or oxide glass deposited on the sintered article. A paste of aluminium nitride powder or oxide glass powder is coated on a surface of the sintered article of aluminium nitride and then is sintered to prepare a dense smooth surface layer.

摘要翻译： 氮化铝陶瓷提高了用作集成电路和封装材料的基板的热辐射性能，其包括主要由氮化铝组成并且在室温下具有高于100×W / m×K的热导率的烧结制品和主要由氮化铝组成的表面层 或沉积在烧结制品上的氧化物玻璃。 将氮化铝粉末或氧化物玻璃粉末的糊料涂覆在氮化铝烧结体的表面上，然后烧结以制备致密的光滑表面层。

公开(公告)号：US06428741B2

公开(公告)日：2002-08-06

申请号：US09783259

申请日：2001-02-13

申请人： Yasuhisa Yushio ,  Hirohiko Nakata ,  Kazutaka Sasaki ,  Masuhiro Natsuhara ,  Motoyuki Tanaka ,  Yasuhiro Murase

发明人： Yasuhisa Yushio ,  Hirohiko Nakata ,  Kazutaka Sasaki ,  Masuhiro Natsuhara ,  Motoyuki Tanaka ,  Yasuhiro Murase

IPC分类号： C04B35581

CPC分类号： C04B35/581 ,  H01L23/15 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is an aluminum nitride sintered body excellent in thermal shock resistance and strength and applicable to a radiating substrate for a power module or a jig for semiconductor equipment employed under a strict heat cycle. An aluminum nitride sintered body obtained with a sintering aid of a rare earth element and an alkaline earth metal element contains 0.01 to 5 percent by weight of an alkaline earth metal element compound in terms of an oxide and 0.01 to 10 percent by weight of a rare earth element compound in terms of an oxide, and the amount of carbon remaining in the sintered body is controlled to 0.005 to 0.1 percent by weight, thereby suppressing grain growth and improving thermal shock resistance and strength of the sintered body.

摘要翻译： 提供耐热冲击性和强度优异的氮化铝烧结体，适用于在严格的热循环下使用的功率模块用的放射性基板或半导体装置的夹具。 用稀土元素和碱土金属元素的烧结助剂获得的氮化铝烧结体含有0.01〜5重量％的碱土类金属元素化合物，以氧化物计，0.01〜10重量％的稀有金属元素 以氧化物换算的土元素化合物，将烧结体中剩余的碳量控制在0.005〜0.1重量％，抑制晶粒生长，提高耐烧结体的耐热冲击性和强度。

公开(公告)号：US5677052A

公开(公告)日：1997-10-14

申请号：US698293

申请日：1996-08-15

申请人： Kouhei Shimoda ,  Kazuya Kamitake ,  Hirohiko Nakata ,  Kazutaka Sasaki ,  Masuhiro Natsuhara ,  Harutoshi Ukegawa

发明人： Kouhei Shimoda ,  Kazuya Kamitake ,  Hirohiko Nakata ,  Kazutaka Sasaki ,  Masuhiro Natsuhara ,  Harutoshi Ukegawa

IPC分类号： C04B35/581 ,  C04B41/50 ,  C04B41/52 ,  C04B41/86 ,  C04B41/87 ,  C04B41/89 ,  H01L21/48 ,  H01L23/15 ,  C04B35/58 ,  H05K1/03

CPC分类号： C04B41/009 ,  C04B35/581 ,  C04B41/5022 ,  C04B41/5063 ,  C04B41/52 ,  C04B41/86 ,  C04B41/87 ,  C04B41/89 ,  H01L21/481 ,  H01L23/15 ,  C04B2111/00301 ,  C04B2111/00844 ,  H01L2924/0002 ,  Y10T428/24413 ,  Y10T428/24479 ,  Y10T428/24942 ,  Y10T428/265 ,  Y10T428/31678

摘要： Aluminium nitride ceramics improved in heat radiation property used as a substrate for integrated circuits and package material, comprising a sintered article consisting mainly of aluminium nitride and having a thermal conductivity higher than 100.multidot.W/m.multidot.K at room temperature and a surface layer consisting mainly of aluminium nitride or oxide glass deposited on the sintered article. A paste of aluminium nitride powder or oxide glass powder is coated on a surface of the sintered article of aluminium nitride and then is sintered to prepare a dense smooth surface layer.

摘要翻译： 氮化铝陶瓷提高了用作集成电路和封装材料的基板的热辐射性能，其包括主要由氮化铝组成并且在室温下具有高于100×W / m×K的热导率的烧结制品和主要由氮化铝组成的表面层 或沉积在烧结制品上的氧化物玻璃。 将氮化铝粉末或氧化物玻璃粉末的糊料涂覆在氮化铝烧结体的表面上，然后烧结以制备致密的光滑表面层。

公开(公告)号：US06783867B2

公开(公告)日：2004-08-31

申请号：US10454288

申请日：2003-06-04

申请人： Kazutaka Sasaki ,  Hirohiko Nakata ,  Akira Sasame ,  Mitsunori Kobayashi

发明人： Kazutaka Sasaki ,  Hirohiko Nakata ,  Akira Sasame ,  Mitsunori Kobayashi

IPC分类号： H01L2314

CPC分类号： H01L23/498 ,  H01L23/49822 ,  H01L24/48 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/8547 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01322 ,  H01L2924/15747 ,  H05K3/38 ,  Y10T428/12528 ,  Y10T428/12576 ,  Y10T428/12806 ,  Y10T428/12812 ,  Y10T428/1291 ,  Y10T428/24917 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： A highly reliable member for a semiconductor device, in which a high melting point metallizing layer, which consists mainly of a high melting point metal such as W and/or Mo, and an intervening metal layer, which has a melting point of not greater than 1,000° C. and consists mainly of at least one selected from among Ni, Cu and Fe, are provided on an AlN substrate material in this order on the AlN substrate material, and a conductor layer consisting mainly of copper is directly bonded to the intervening metal layer without intervention of a solder material layer. A semiconductor element or the like is mounted on the member for a semiconductor device, thereby fabricating a semiconductor device. The high melting point metallizing layer is formed on an aluminum nitride substrate by post-fire or co-fire metallization.

摘要翻译： 一种半导体器件的高可靠性部件，其中主要由诸如W和/或Mo的高熔点金属组成的高熔点金属化层和熔点不大于 1000℃，并且主要由选自Ni，Cu和Fe中的至少一种组成，在AlN衬底材料上依次设置在AlN衬底材料上，并且主要由铜组成的导体层直接结合到中间 金属层而不介入焊料层。 半导体元件等安装在半导体器件用部件上，制造半导体器件。 高熔点金属化层通过后火或共火金属化在氮化铝衬底上形成。

公开(公告)号：US06696103B1

公开(公告)日：2004-02-24

申请号：US09358484

申请日：1999-07-22

申请人： Kouhei Shimoda ,  Kazuya Kamitake ,  Hirohiko Nakata ,  Kazutaka Sasaki ,  Masuhiro Natsuhara ,  Harutoshi Ukegawa

发明人： Kouhei Shimoda ,  Kazuya Kamitake ,  Hirohiko Nakata ,  Kazutaka Sasaki ,  Masuhiro Natsuhara ,  Harutoshi Ukegawa

IPC分类号： B05D500

CPC分类号： C04B41/5063 ,  C04B35/581 ,  C04B41/5022 ,  C04B41/52 ,  C04B41/86 ,  C04B41/87 ,  C04B41/89 ,  H01L21/481 ,  H01L23/15 ,  H01L2924/0002 ,  H01L2924/00

摘要： Aluminium nitride ceramics improved in heat radiation property used as a substrate for integrated circuits and package material, comprising a sintered article consisting mainly of aluminium nitride and having a thermal conductivity higher than 100.W/m.K at room temperature and a surface layer consisting mainly of aluminium nitride or oxide glass deposited on the sintered article. A paste of aluminium nitride powder or oxide glass powder is coated on a surface of the sintered article of aluminium nitride and then is sintered to prepare a dense smooth surface layer.

摘要翻译： 氮化铝陶瓷提高了用作集成电路和封装材料的基板的热辐射性能，其包括主要由氮化铝组成并且在室温下具有高于100.W / mK的热导率的烧结制品，以及主要由 将氮化铝或氧化物玻璃沉积在烧结制品上。将氮化铝粉末或氧化物玻璃粉末的浆料涂覆在氮化铝烧结体的表面上，然后烧结以制备致密的光滑表面层。

公开(公告)号：US5998043A

公开(公告)日：1999-12-07

申请号：US792147

申请日：1997-01-31

申请人： Kazutaka Sasaki ,  Hirohiko Nakata ,  Akira Sasame ,  Mitsunori Kobayashi

发明人： Kazutaka Sasaki ,  Hirohiko Nakata ,  Akira Sasame ,  Mitsunori Kobayashi

IPC分类号： H05K1/09 ,  C04B37/02 ,  C04B41/52 ,  H01L23/15 ,  H01L23/498 ,  H05K3/38 ,  H01L23/14 ,  H01L23/373 ,  H01L23/50

CPC分类号： C04B41/009 ,  C04B35/581 ,  C04B35/62625 ,  C04B35/62655 ,  C04B35/634 ,  C04B37/026 ,  C04B41/52 ,  H01L23/498 ,  H01L23/49822 ,  H05K3/38 ,  C04B2111/00844 ,  C04B2235/3208 ,  C04B2235/3225 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6025 ,  C04B2235/604 ,  C04B2235/96 ,  C04B2237/123 ,  C04B2237/366 ,  C04B2237/407 ,  C04B2237/555 ,  C04B2237/72 ,  H01L2224/48091 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/15747 ,  Y10T428/12576

摘要： A highly reliable member for a semiconductor device, in which a high melting point metallizing layer, which consists mainly of a high melting point metal such as W and/or Mo, and an intervening metal layer, which has a melting point of not greater than 1,000.degree. C. and consists mainly of at least one selected from among Ni, Cu and Fe, are provided on an AlN substrate material in this order on the AlN substrate material, and a conductor layer consisting mainly of copper is directly bonded to the intervening metal layer without intervention of a solder material layer. A semiconductor element or the like is mounted on the member for a semiconductor device, thereby fabricating a semiconductor device. The high melting point metallizing layer is formed on an aluminum nitride substrate by post-fire or co-fire matallization.

摘要翻译： 一种半导体器件的高可靠性部件，其中主要由诸如W和/或Mo的高熔点金属组成的高熔点金属化层和熔点不大于 1000℃，主要由选自Ni，Cu和Fe中的至少一种组成，在AlN衬底材料上依次设置在AlN衬底材料上，并且主要由铜组成的导体层直接结合到中间 金属层而不介入焊料层。 半导体元件等安装在半导体器件用部件上，制造半导体器件。 高熔点金属化层通过后火或共烧金属化在氮化铝衬底上形成。

公开(公告)号：US06403510B1

公开(公告)日：2002-06-11

申请号：US09641056

申请日：2000-08-17

申请人： Akira Kuibira ,  Hirohiko Nakata ,  Kenjiro Higaki ,  Kazutaka Sasaki ,  Takashi Ishii

发明人： Akira Kuibira ,  Hirohiko Nakata ,  Kenjiro Higaki ,  Kazutaka Sasaki ,  Takashi Ishii

IPC分类号： C04B3500

CPC分类号： C04B35/581 ,  H05K1/0306

摘要： An aluminum nitride sintered body with high heat conductivity and high strength as well as a method of inexpensively manufacturing such an aluminum nitride sintered body at a low temperature are provided. The aluminum nitride sintered body is manufactured by adding a compound of at least one type of rare earth element (R) selected from La, Ce, Pr, Sm; and Eu, Y compound, Ca compound, and Al compound to an AlN powder and sintering the resulting mixture at a temperature of 1550° C. to 1750° C. The content of oxygen forming Al2O3 existing in an aluminate with rare earth element (R), Y and Ca and oxygen forming independently existing Al2O3 is calculated as 0.01 to 5.0% by weight, heat conductivity is 166 to 200 W/mK, and bending strength is at least 300 MPa.

摘要翻译： 提供具有高导热性和高强度的氮化铝烧结体以及低温下廉价制造这种氮化铝烧结体的方法。 通过添加选自La，Ce，Pr，Sm中的至少一种稀土元素（R）的化合物来制造氮化铝烧结体; 和Eu，Y化合物，Ca化合物和Al化合物，并在1550℃至1750℃下烧结所得混合物。存在于具有稀土元素的铝酸盐中的形成氧化铝的含量（R ），Y和Ca和独立存在的Al 2 O 3的氧气的比例计算为0.01〜5.0重量％，热传导率为166〜200W / m·K，弯曲强度为300MPa以上。

公开(公告)号：US06294275B1

公开(公告)日：2001-09-25

申请号：US09304531

申请日：1999-05-04

申请人： Masuhiro Natsuhara ,  Hirohiko Nakata ,  Yasuhisa Yushio ,  Motoyuki Tanaka ,  Shunji Nagao ,  Akira Shinkoda ,  Kazutaka Sasaki

发明人： Masuhiro Natsuhara ,  Hirohiko Nakata ,  Yasuhisa Yushio ,  Motoyuki Tanaka ,  Shunji Nagao ,  Akira Shinkoda ,  Kazutaka Sasaki

IPC分类号： B32B900

CPC分类号： C04B41/009 ,  C04B35/581 ,  C04B41/51 ,  C04B41/88 ,  C04B2111/00844 ,  H01L23/15 ,  H01L2924/0002 ,  H05K1/0306 ,  Y10T428/24917 ,  H01L2924/00

摘要： An aluminum-nitride sintered body that has both high thermal conductivity and high mechanical strength, a fabricating method for the same, and a semiconductor substrate comprising the same. A material powder is prepared by mixing an aluminum-nitride powder, constituting 1 to 95 wt. %, having an average particle diameter of 1.0 &mgr;m or less obtained by chemical vapor deposition, with another type or types of aluminum-nitride powders constituting the remaining part. The material powder is sintered in a non-oxidizing atmosphere to obtain a sintered body having an average grain diameter of 2 &mgr;m or less and a half width of the diffraction peak on the (302) plane, obtained by X-ray diffraction, of 0.24 deg. or less. Formation of a metallized layer on the sintered body yields a semiconductor substrate.

摘要翻译： 具有高导热性和高机械强度的氮化铝烧结体及其制造方法以及包含该氮化物烧结体的半导体衬底。 通过混合构成1〜95重量％的氮化铝粉末， ％，通过化学气相沉积获得的平均粒径为1.0μm以下的其他类型的氮化铝粉末构成剩余部分。 将该材料粉末在非氧化性气氛中烧结，得到平均粒径为2μm以下的通过X射线衍射得到的（302）面衍射峰的半值宽度为0.24的烧结体 度 或更少。 在烧结体上形成金属化层产生半导体衬底。