公开(公告)号：US06794210B2

公开(公告)日：2004-09-21

申请号：US10703330

申请日：2003-11-07

申请人： Yoichiro Ouchi ,  Hiroaki Okagawa ,  Masahiro Koto ,  Kazuyuki Tadatomo

发明人： Yoichiro Ouchi ,  Hiroaki Okagawa ,  Masahiro Koto ,  Kazuyuki Tadatomo

IPC分类号： H01L2100

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/0075

摘要： The state of a surface of a substrate 11 or a GaN group compound semiconductor film 12 formed on the substrate 11 is modified with an anti-surfactant material and a GaN group compound semiconductor material is supplied by a vapor phase growth method to form dot structures made of the GaN group compound semiconductor on the surface of the semiconductor film 12, and the growth is continued until the dot structures join and the surface becomes flat. In this case, the dot structures join while forming a cavity 21 on an anti-surfactant region. A dislocation line 22 extending from the underlayer is blocked by the cavity 21, and therefore, the dislocation density of an epitaxial film surface can be reduced. As a result, the dislocation density of the GaN group compound semiconductor crystal can be reduced without using a masking material in the epitaxial growth, whereby a high quality epitaxial film can be obtained.

公开(公告)号：US06700179B1

公开(公告)日：2004-03-02

申请号：US09937337

申请日：2001-12-18

申请人： Yoichiro Ouchi ,  Hiroaki Okagawa ,  Masahiro Koto ,  Kazuyuki Tadatomo

发明人： Yoichiro Ouchi ,  Hiroaki Okagawa ,  Masahiro Koto ,  Kazuyuki Tadatomo

IPC分类号： H01L2922

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/0075

摘要： The state of a surface of a substrate 11 or a GaN group compound semiconductor film 12 formed on the substrate 11 is modified with an anti-surfactant material and a GaN group compound semiconductor material is supplied by a vapor phase growth method to form dot structures made of the GaN group compound semiconductor on the surface of the semiconductor film 12, and the growth is continued until the dot structures join and the surface becomes flat. In this case, the dot structures join while forming a cavity 21 on an anti-surfactant region. A dislocation line 22 extending from the underlayer is blocked by the cavity 21, and therefore, the dislocation density of an epitaxial film surface can be reduced. As a result, the dislocation density of the GaN group compound semiconductor crystal can be reduced without using a masking material in the epitaxial growth, whereby a high quality epitaxial film can be obtained.

摘要翻译： 用抗表面活性剂材料改变形成在基板11上的基板11或GaN基化合物半导体膜12的表面的状态，并通过气相生长法提供GaN族化合物半导体材料，以形成点状结构 的半导体膜12的表面上的GaN族化合物半导体，并且继续生长直到点结构接合并且表面变平坦。 在这种情况下，点状结构在抗表面活性剂区域上形成空腔21时连接。 从底层延伸的位错线22被空腔21阻挡，因此可以减小外延膜表面的位错密度。 结果，可以在外延生长中不使用掩模材料来降低GaN族化合物半导体晶体的位错密度，由此可以获得高质量的外延膜。

公开(公告)号：US20070026643A1

公开(公告)日：2007-02-01

申请号：US11529905

申请日：2006-09-29

申请人： Kazuyuki Tadatomo ,  Hiroaki Okagawa ,  Yoichiro Ouchi ,  Masahiro Koto

发明人： Kazuyuki Tadatomo ,  Hiroaki Okagawa ,  Yoichiro Ouchi ,  Masahiro Koto

IPC分类号： H01L21/20

CPC分类号： C30B29/403 ,  C30B25/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/40 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/007

摘要： A growth plane of substrate 1 is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an ingredient gas does not sufficiently reach the inside of a concave part 12, and therefore, a crystal growth occurs only from an upper part of a convex part 11. As shown in FIG. 1(b), therefore, a crystal unit 20 occurs when the crystal growth is started, and as the crystal growth proceeds, films grown in the lateral direction from the upper part of the convex part 11 as a starting point are connected to cover the concavo-convex surface of the substrate 1, leaving a cavity 13 in the concave part, as shown in FIG. 1(c), thereby giving a crystal layer 2, whereby the semiconductor base of the present invention is obtained. In this case, the part grown in the lateral direction, or the upper part of the concave part 12 has a low dislocation region and the crystal layer prepared has high quality. The manufacturing method of the semiconductor crystal of the present invention divides this semiconductor base into the substrate 1 and the crystal layer 2 at the cavity part thereof to give a semiconductor crystal.

摘要翻译： 基板1的生长面被加工成具有凹凸表面。 凹部的底部可能被遮蔽。 当通过使用该基板的气相生长生长晶体时，成分气体不能充分到达凹部12的内部，因此仅从凸部11的上部仅发生晶体生长。如图 。 因此，如图1（b）所示，当晶体生长开始时发生晶体单元20，并且随着晶体生长的进行，从作为起点的凸部11的上部沿横向方向生长的膜被连接 衬底1的凹凸表面，在凹部中留下空腔13，如图1所示。 如图1（c）所示，得到结晶层2，得到本发明的半导体基底。 在这种情况下，沿横向生长的部分或凹部12的上部具有低位错区域，并且所制备的晶体层具有高质量。 本发明的半导体晶体的制造方法将该半导体基体在其空腔部分分割成基板1和晶体层2，得到半导体晶体。

公开(公告)号：US07589001B2

公开(公告)日：2009-09-15

申请号：US11541201

申请日：2006-09-29

申请人： Kazuyuki Tadatomo ,  Hiroaki Okagawa ,  Yoichiro Ouchi ,  Masahiro Koto

发明人： Kazuyuki Tadatomo ,  Hiroaki Okagawa ,  Yoichiro Ouchi ,  Masahiro Koto

IPC分类号： H01L21/20

CPC分类号： C30B29/403 ,  C30B25/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/40 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/007

摘要： A growth plane of substrate 1 is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an ingredient gas does not sufficiently reach the inside of a concave part 12, and therefore, a crystal growth occurs only from an upper part of a convex part 11. As shown in FIG. 1(b), therefore, a crystal unit 20 occurs when the crystal growth is started, and as the crystal growth proceeds, films grown in the lateral direction from the upper part of the convex part 11 as a starting point are connected to cover the concavo-convex surface of the substrate 1, leaving a cavity 13 in the concave part, as shown in FIG. 1(c), thereby giving a crystal layer 2, whereby the semiconductor base of the present invention is obtained. In this case, the part grown in the lateral direction, or the upper part of the concave part 12 has a low dislocation region and the crystal layer prepared has high quality. The manufacturing method of the semiconductor crystal of the present invention divides this semiconductor base into the substrate 1 and the crystal layer 2 at the cavity part thereof to give a semiconductor crystal.

摘要翻译： 基板1的生长面被加工成具有凹凸表面。 凹部的底部可能被遮蔽。 当通过使用该基板的气相生长生长晶体时，成分气体不能充分到达凹部12的内部，因此仅从凸部11的上部仅发生晶体生长。如图 。 因此，如图1（b）所示，当晶体生长开始时发生晶体单元20，并且随着晶体生长的进行，从作为起点的凸部11的上部沿横向方向生长的膜被连接 衬底1的凹凸表面，在凹部中留下空腔13，如图1所示。 如图1（c）所示，得到结晶层2，得到本发明的半导体基底。 在这种情况下，沿横向生长的部分或凹部12的上部具有低位错区域，并且所制备的晶体层具有高质量。 本发明的半导体晶体的制造方法将该半导体基体在其空腔部分分割成基板1和晶体层2，得到半导体晶体。

公开(公告)号：US07504324B2

公开(公告)日：2009-03-17

申请号：US11529905

申请日：2006-09-29

申请人： Kazuyuki Tadatomo ,  Hiroaki Okagawa ,  Yoichiro Ouchi ,  Masahiro Koto

发明人： Kazuyuki Tadatomo ,  Hiroaki Okagawa ,  Yoichiro Ouchi ,  Masahiro Koto

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： C30B29/403 ,  C30B25/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/40 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/007

摘要： A growth plane of substrate 1 is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an ingredient gas does not sufficiently reach the inside of a concave part 12, and therefore, a crystal growth occurs only from an upper part of a convex part 11. As shown in FIG. 1(b), therefore, a crystal unit 20 occurs when the crystal growth is started, and as the crystal growth proceeds, films grown in the lateral direction from the upper part of the convex part 11 as a starting point are connected to cover the concavo-convex surface of the substrate 1, leaving a cavity 13 in the concave part, as shown in FIG. 1(c), thereby giving a crystal layer 2, whereby the semiconductor base of the present invention is obtained. In this case, the part grown in the lateral direction, or the upper part of the concave part 12 has a low dislocation region and the crystal layer prepared has high quality. The manufacturing method of the semiconductor crystal of the present invention divides this semiconductor base into the substrate 1 and the crystal layer 2 at the cavity part thereof to give a semiconductor crystal.

公开(公告)号：US20070026644A1

公开(公告)日：2007-02-01

申请号：US11541201

申请日：2006-09-29

申请人： Kazuyuki Tadatomo ,  Hiroaki Okagawa ,  Yoichiro Ouchi ,  Masahiro Koto

发明人： Kazuyuki Tadatomo ,  Hiroaki Okagawa ,  Yoichiro Ouchi ,  Masahiro Koto

IPC分类号： H01L21/20

CPC分类号： C30B29/403 ,  C30B25/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/40 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/007

摘要： A growth plane of substrate 1 is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an ingredient gas does not sufficiently reach the inside of a concave part 12, and therefore, a crystal growth occurs only from an upper part of a convex part 11. As shown in FIG. 1(b), therefore, a crystal unit 20 occurs when the crystal growth is started, and as the crystal growth proceeds, films grown in the lateral direction from the upper part of the convex part 11 as a starting point are connected to cover the concavo-convex surface of the substrate 1, leaving a cavity 13 in the concave part, as shown in FIG. 1(c), thereby giving a crystal layer 2, whereby the semiconductor base of the present invention is obtained. In this case, the part grown in the lateral direction, or the upper part of the concave part 12 has a low dislocation region and the crystal layer prepared has high quality. The manufacturing method of the semiconductor crystal of the present invention divides this semiconductor base into the substrate 1 and the crystal layer 2 at the cavity part thereof to give a semiconductor crystal.

公开(公告)号：US07115486B2

公开(公告)日：2006-10-03

申请号：US10842777

申请日：2004-05-11

申请人： Kazuyuki Tadatomo ,  Hiroaki Okagawa ,  Yoichiro Ouchi ,  Masahiro Koto

发明人： Kazuyuki Tadatomo ,  Hiroaki Okagawa ,  Yoichiro Ouchi ,  Masahiro Koto

IPC分类号： H01L21/20

CPC分类号： C30B29/403 ,  C30B25/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/40 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/007

摘要： A growth plane of substrate 1 is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an ingredient gas does not sufficiently reach the inside of a concave part 12, and therefore, a crystal growth occurs only from an upper part of a convex part 11. As shown in FIG. 1(b), therefore, a crystal unit 20 occurs when the crystal growth is started, and as the crystal growth proceeds, films grown in the lateral direction from the upper part of the convex part 11 as a starting point are connected to cover the concavo-convex surface of the substrate 1, leaving a cavity 13 in the concave part, as shown in FIG. 1(c), thereby giving a crystal layer 2, whereby the semiconductor base of the present invention is obtained. In this case, the part grown in the lateral direction, or the upper part of the concave part 12 has a low dislocation region and the crystal layer prepared has high quality. The manufacturing method of the semiconductor crystal of the present invention divides this semiconductor base into the substrate 1 and the crystal layer 2 at the cavity part thereof to give a semiconductor crystal.

摘要翻译： 基板1的生长面被加工成具有凹凸表面。 凹部的底部可能被遮蔽。 当通过使用该基板的气相生长生长晶体时，成分气体不能充分到达凹部12的内部，因此仅从凸部11的上部仅发生晶体生长。如图 。 因此，如图1（b）所示，当晶体生长开始时发生晶体单元20，并且随着晶体生长的进行，从作为起点的凸部11的上部沿横向方向生长的膜被连接 衬底1的凹凸表面，在凹部中留下空腔13，如图1所示。 如图1（c）所示，得到结晶层2，得到本发明的半导体基底。 在这种情况下，沿横向生长的部分或凹部12的上部具有低位错区域，并且所制备的晶体层具有高质量。 本发明的半导体晶体的制造方法将该半导体基体在其空腔部分分割成基板1和晶体层2，得到半导体晶体。

公开(公告)号：US06940098B1

公开(公告)日：2005-09-06

申请号：US09936683

申请日：2000-03-15

申请人： Kazuyuki Tadatomo ,  Hiroaki Okagawa ,  Yoichiro Ouchi ,  Masahiro Koto

发明人： Kazuyuki Tadatomo ,  Hiroaki Okagawa ,  Yoichiro Ouchi ,  Masahiro Koto

IPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  H01L21/20 ,  H01L33/00

CPC分类号： C30B29/403 ,  C30B25/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/40 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/007

摘要： A growth plane of substrate 1 is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an ingredient gas does not sufficiently reach the inside of a concave part 12, and therefore, a crystal growth occurs only from an upper part of a convex part 11. As shown in FIG. 1(b), therefore, a crystal unit 20 occurs when the crystal growth is started, and as the crystal growth proceeds, films grown in the lateral direction from the upper part of the convex part 11 as a starting point are connected to cover the concavo-convex surface of the substrate 1, leaving a cavity 13 in the concave part, as shown in FIG. 1(c), thereby giving a crystal layer 2, whereby the semiconductor base of the present invention is obtained. In this case, the part grown in the lateral direction, or the upper part of the concave part 12 has a low dislocation region and the crystal layer prepared has high quality. The manufacturing method of the semiconductor crystal of the present invention divides this semiconductor base into the substrate 1 and the crystal layer 2 at the cavity part thereof to give a semiconductor crystal.

摘要翻译： 基板1的生长面被加工成具有凹凸表面。 凹部的底部可能被遮蔽。 当使用该基板通过气相生长生长晶体时，成分气体不能充分到达凹部12的内部，因此仅从凸部11的上部发生晶体生长。 如图所示。 因此，如图1（b）所示，当晶体生长开始时发生晶体单元20，并且随着晶体生长的进行，从作为起点的凸部11的上部沿横向方向生长的膜被连接 衬底1的凹凸表面，在凹部中留下空腔13，如图1所示。 如图1（c）所示，得到结晶层2，得到本发明的半导体基底。 在这种情况下，沿横向生长的部分或凹部12的上部具有低位错区域，并且所制备的晶体层具有高质量。 本发明的半导体晶体的制造方法将该半导体基体在其空腔部分分割成基板1和晶体层2，得到半导体晶体。

公开(公告)号：US07179667B2

公开(公告)日：2007-02-20

申请号：US10380933

申请日：2001-09-17

申请人： Hiroaki Okagawa ,  Kazuyuki Tadatomo ,  Yoichiro Ouchi ,  Takashi Tsunekawa

发明人： Hiroaki Okagawa ,  Kazuyuki Tadatomo ,  Yoichiro Ouchi ,  Takashi Tsunekawa

IPC分类号： H01L21/00 ,  C30B23/00

CPC分类号： C30B29/403 ,  C30B25/18 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/0265

摘要： As shown in FIG. 1(a), substrate 1 having a growth plane having a concavo-convex surface is used. When GaN group crystal is vapor phase grown using this substrate, the concavo-convex shape suppresses growth in the lateral direction and promotes growth in the C axis direction, thereby affording a base surface capable of forming a facet plane. Thus, as shown in FIG. 1(b), a crystal having a facet plane is grown in a convex part, and a crystal is also grown in a concave part. When the crystal growth is continued, the films grown from the convex part and the concave part are joined in time to cover a concavo-convex surface and become flat as shown in FIG. 1(c). In this case, an area having a low a dislocation density is formed in the upper part of the convex part where facet plane was formed, and the prepared film has high quality.

摘要翻译： 如图所示。 如图1（a）所示，使用具有凹凸表面的生长面的基板1。 当GaN基晶体使用该衬底气相生长时，凹凸形状抑制横向生长并促进C轴方向的生长，从而提供能够形成小平面的基表面。 因此，如图1所示。 如图1（b）所示，具有小平面的晶体生长在凸部中，并且晶体也在凹部中生长。 当晶体生长持续时，如图3所示，从凸部和凹部生长的膜及时接合以覆盖凹凸表面并变平。 1（c）。 在这种情况下，在形成有小平面的凸部的上部形成有位错密度低的区域，所制备的膜具有高质量。

公开(公告)号：US07053420B2

公开(公告)日：2006-05-30

申请号：US10472324

申请日：2002-03-20

申请人： Kazuyuki Tadatomo ,  Hiroaki Okagawa ,  Yoichiro Ouchi ,  Takashi Tsunekawa

发明人： Kazuyuki Tadatomo ,  Hiroaki Okagawa ,  Yoichiro Ouchi ,  Takashi Tsunekawa

IPC分类号： H01L29/22 ,  H01L29/24 ,  H01L29/227

CPC分类号： H01L33/22 ,  H01L33/12 ,  H01L33/32

摘要： Concaves and convexes 1a are formed by processing the surface layer of a first layer 1, and second layer 2 having a different refractive index from the first layer is grown while burying the concaves and convexes (or first crystal 10 is grown as concaves and convexes on crystal layer S to be the base of the growth, and second crystal 20 is grown, which has a different refractive index from the first crystal). After forming these concavo-convex refractive index interfaces 1a (10a), an element structure, wherein semiconductor crystal layers containing a light-emitting layer A are laminated, is formed. As a result, the light in the lateral direction, which is generated in the light-emitting layer changes its direction by an influence of the concavo-convex refractive index interface and heads toward the outside. Particularly, when an ultraviolet light is to be emitted using InGaN as a material of a light-emitting layer, a quantum well structure is employed and all the layers between the quantum well structure and the low temperature buffer layer are formed of a GaN crystal, removing AlGaN. The quantum well structure preferably consists of a well layer made of InGaN and a barrier layer made of GaN, and the thickness of the barrier layer is preferably 6 nm–30 nm.

摘要翻译： 通过处理第一层1的表面层形成凹凸1a，同时生长具有与第一层不同的折射率的第二层2，同时埋入凹凸（或第一晶体10生长为凹凸） 在晶体层S上作为生长的基底，生长第二晶体20，其具有与第一晶体不同的折射率）。 在形成这些凹凸折射率界面1a（10a）之后，形成其中层叠有发光层A的半导体晶体层的元件结构。 结果，在发光层中产生的横向的光通过凹凸折射率界面的影响而朝向外部改变其方向。 特别地，当使用InGaN作为发光层的材料发射紫外光时，采用量子阱结构，量子阱结构和低温缓冲层之间的所有层由GaN晶体形成， 去除AlGaN。 量子阱结构优选由由InGaN制成的阱层和由GaN制成的阻挡层组成，并且阻挡层的厚度优选为6nm〜30nm。