-
公开(公告)号：US20080066681A1
公开(公告)日：2008-03-20
申请号：US11931585
申请日：2007-10-31
IPC分类号： C23C14/00
CPC分类号： H01L21/02274 , C23C16/452 , C23C16/45525 , C23C16/45542 , C23C16/45546 , C23C16/45578 , C23C16/4583 , C23C16/4584 , C23C16/54 , H01J37/32357 , H01J37/3244 , H01J37/32513 , H01J37/32541 , H01J37/32834 , H01J2237/332 , H01L21/02183 , H01L21/02205 , H01L21/02211 , H01L21/205 , H01L21/31604 , H01L21/67109 , H01L21/77
摘要： A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.
-
公开(公告)号：US08544411B2
公开(公告)日：2013-10-01
申请号：US12390291
申请日：2009-02-20
IPC分类号： C23C16/00
CPC分类号： H01L21/02274 , C23C16/452 , C23C16/45525 , C23C16/45542 , C23C16/45546 , C23C16/45578 , C23C16/4583 , C23C16/4584 , C23C16/54 , H01J37/32357 , H01J37/3244 , H01J37/32513 , H01J37/32541 , H01J37/32834 , H01J2237/332 , H01L21/02183 , H01L21/02205 , H01L21/02211 , H01L21/205 , H01L21/31604 , H01L21/67109 , H01L21/77
摘要： A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.
-
公开(公告)号：US08020514B2
公开(公告)日：2011-09-20
申请号：US12357213
申请日：2009-01-21
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/02274 , C23C16/452 , C23C16/45525 , C23C16/45542 , C23C16/45546 , C23C16/45578 , C23C16/4583 , C23C16/4584 , C23C16/54 , H01J37/32357 , H01J37/3244 , H01J37/32513 , H01J37/32541 , H01J37/32834 , H01J2237/332 , H01L21/02183 , H01L21/02205 , H01L21/02211 , H01L21/205 , H01L21/31604 , H01L21/67109 , H01L21/77
摘要： A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.
-
公开(公告)号：US08028652B2
公开(公告)日：2011-10-04
申请号：US11688730
申请日：2007-03-20
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/02274 , C23C16/452 , C23C16/45525 , C23C16/45542 , C23C16/45546 , C23C16/45578 , C23C16/4583 , C23C16/4584 , C23C16/54 , H01J37/32357 , H01J37/3244 , H01J37/32513 , H01J37/32541 , H01J37/32834 , H01J2237/332 , H01L21/02183 , H01L21/02205 , H01L21/02211 , H01L21/205 , H01L21/31604 , H01L21/67109 , H01L21/77
摘要： A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.
摘要翻译： 一种等离子体处理装置，包括堆叠并容纳多个基板的处理室; 一对电极，其沿着所述多个基板的堆叠方向延伸，所述一对电极设置在所述处理室中的所述多个基板的一侧，并施加高频电力; 以及将处理气体供给到一对电极之间的空气的供气构件。
-
公开(公告)号：US07861668B2
公开(公告)日：2011-01-04
申请号：US11931585
申请日：2007-10-31
IPC分类号： C23C16/00
CPC分类号： H01L21/02274 , C23C16/452 , C23C16/45525 , C23C16/45542 , C23C16/45546 , C23C16/45578 , C23C16/4583 , C23C16/4584 , C23C16/54 , H01J37/32357 , H01J37/3244 , H01J37/32513 , H01J37/32541 , H01J37/32834 , H01J2237/332 , H01L21/02183 , H01L21/02205 , H01L21/02211 , H01L21/205 , H01L21/31604 , H01L21/67109 , H01L21/77
摘要： A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.
-
公开(公告)号：US20080153308A1
公开(公告)日：2008-06-26
申请号：US10571898
申请日：2005-02-16
CPC分类号： C23C16/45578 , C23C16/345 , C23C16/452 , C23C16/45542 , H01L21/67109
摘要： A substrate processing apparatus comprising: a processing chamber which is to accommodate at least one substrate; a gas supply system which is to supply processing gas into the processing chamber; an exhaust system which is to exhaust atmosphere in the processing chamber; and at least one pair of electrodes which are to bring the processing gas into an active state and which are accommodated in protection tubes such that the electrodes can be inserted into and pulled out from the protection tubes, wherein the electrodes are accommodated in the protection tube in a state where at least a portion of the electrodes is bent, and the electrodes are formed of flexible members, is disclosed.
摘要翻译： 一种基板处理装置，包括：处理室，其容纳至少一个基板; 将处理气体供给到处理室内的气体供给系统; 用于排出处理室中的气体的排气系统; 以及至少一对电极，其将处理气体置于活性状态并容纳在保护管中，使得电极可以插入保护管中并从保护管中拉出，其中电极容纳在保护管中 在电极的至少一部分弯曲的状态下，电极由柔性部件形成。
-
公开(公告)号：US20110209664A1
公开(公告)日：2011-09-01
申请号：US13102694
申请日：2011-05-06
IPC分类号： H01L21/02 , C23C16/455 , C23C16/50 , C23C16/52
CPC分类号： C23C16/45578 , C23C16/345 , C23C16/452 , C23C16/45542 , H01L21/67109
摘要： A substrate processing apparatus comprising: a processing chamber which is to accommodate at least one substrate; a gas supply system which is to supply processing gas into the processing chamber; an exhaust system which is to exhaust atmosphere in the processing chamber; and at least one pair of electrodes which are to bring the processing gas into an active state and which are accommodated in protection tubes such that the electrodes can be inserted into and pulled out from the protection tubes, wherein the electrodes are accommodated in the protection tube in a state where at least a portion of the electrodes is bent, and the electrodes are formed of flexible members, is disclosed.
摘要翻译： 一种基板处理装置，包括：处理室，其容纳至少一个基板; 将处理气体供给到处理室内的气体供给系统; 用于排出处理室中的气体的排气系统; 以及至少一对电极，其将处理气体置于活性状态并容纳在保护管中，使得电极可以插入保护管中并从保护管中拉出，其中电极容纳在保护管中 在电极的至少一部分弯曲的状态下，电极由柔性部件形成。
-
公开(公告)号：US08518182B2
公开(公告)日：2013-08-27
申请号：US13102694
申请日：2011-05-06
IPC分类号： C23C16/54
CPC分类号： C23C16/45578 , C23C16/345 , C23C16/452 , C23C16/45542 , H01L21/67109
摘要： A substrate processing apparatus comprising: a processing chamber which is to accommodate at least one substrate; a gas supply system which is to supply processing gas into the processing chamber; an exhaust system which is to exhaust atmosphere in the processing chamber; and at least one pair of electrodes which are to bring the processing gas into an active state and which are accommodated in protection tubes such that the electrodes can be inserted into and pulled out from the protection tubes, wherein the electrodes are accommodated in the protection tube in a state where at least a portion of the electrodes is bent, and the electrodes are formed of flexible members, is disclosed.
摘要翻译： 一种基板处理装置，包括：处理室，其容纳至少一个基板; 将处理气体供给到处理室内的气体供给系统; 用于排出处理室中的气体的排气系统; 以及至少一对电极，其将处理气体置于活性状态并容纳在保护管中，使得电极可以插入保护管中并从保护管中拉出，其中电极容纳在保护管中 在电极的至少一部分弯曲的状态下，电极由柔性部件形成。
-
公开(公告)号：US07958842B2
公开(公告)日：2011-06-14
申请号：US10571898
申请日：2005-02-16
IPC分类号： C23C16/00
CPC分类号： C23C16/45578 , C23C16/345 , C23C16/452 , C23C16/45542 , H01L21/67109
摘要： A substrate processing apparatus comprising: a processing chamber which is to accommodate at least one substrate; a gas supply system which is to supply processing gas into the processing chamber; an exhaust system which is to exhaust atmosphere in the processing chamber; and at least one pair of electrodes which are to bring the processing gas into an active state and which are accommodated in protection tubes such that the electrodes can be inserted into and pulled out from the protection tubes, wherein the electrodes are accommodated in the protection tube in a state where at least a portion of the electrodes is bent, and the electrodes are formed of flexible members, is disclosed.
摘要翻译： 一种基板处理装置，包括：处理室，其容纳至少一个基板; 将处理气体供给到处理室内的气体供给系统; 用于排出处理室中的气体的排气系统; 以及至少一对电极，其将处理气体置于活性状态并容纳在保护管中，使得电极可以插入保护管中并从保护管中拉出，其中电极容纳在保护管中 在电极的至少一部分弯曲的状态下，电极由柔性部件形成。
-
公开(公告)号：US20100263593A1
公开(公告)日：2010-10-21
申请号：US12823001
申请日：2010-06-24
申请人： Tadashi Kontani , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
发明人： Tadashi Kontani , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
CPC分类号： C23C16/45546 , C23C16/452 , C23C16/45542 , C23C16/45578 , C23C16/4583 , H01J37/3244
摘要： A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.
摘要翻译： 基板处理装置包括容纳层叠基板的反应室，气体导入部和缓冲室，其中，沿着基板的堆叠方向设置气体导入部，并将基板处理气体导入缓冲室， 缓冲室包括沿着基板的层叠方向设置的多个气体供给开口，从气体导入部导入的处理气体从气体供给口供给到反应室。
-
-
-
-
-
-
-
-
-
搜索结果
17 条记录 (耗时 0.022 秒)
