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公开(公告)号：US07244370B2
公开(公告)日：2007-07-17
申请号：US10910271
申请日：2004-08-04
CPC分类号： H05K1/167 , B41J2/14072 , B41J2/14129 , B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1642 , B41J2/1643 , B41J2/1646 , H05K1/09 , H05K3/06 , H05K3/067 , H05K2201/0317 , H05K2203/0361
摘要： In order to provide a circuit substrate with a satisfactory step coverage by the protective layer and the anti-cavitation film in an edge portion of wirings and a liquid discharge head utilizing such circuit substrate, the invention provides a method for producing a circuit substrate provided, on an insulating surface of a substrate, with a plurality of elements each including a resistive layer and a pair of electrodes formed with a predetermined spacing on said resistive layer, including a step of forming an aluminum electrode wiring layer on the resistive layer, a step of isolating the electrode wiring layer by dry etching into each element, and a step of forming the electrode wiring into a tapered cross section with an etching solution containing phosphoric acid, nitric acid and a chelating agent capable of forming a complex with the wiring metal.
摘要翻译： 为了通过利用这种电路基板的布线边缘部分中的保护层和防空穴膜提供令人满意的阶梯覆盖的电路基板，本发明提供一种制造电路基板的方法， 在基板的绝缘表面上，多个元件各自包括电阻层和在所述电阻层上以预定间隔形成的一对电极，包括在电阻层上形成铝电极布线层的步骤，步骤 通过干蚀刻将电极配线层隔离成各元件，以及通过含有与配线金属形成络合物的磷酸，硝酸和螯合剂的蚀刻液将电极配线形成为锥形截面的工序。
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公开(公告)号：US07270398B2
公开(公告)日：2007-09-18
申请号：US10968901
申请日：2004-10-21
IPC分类号： B41J2/05
CPC分类号： H01C17/065 , H01C17/281 , H05K1/167 , H05K3/02 , Y10T29/49126
摘要： A circuit board for a liquid discharging apparatus in which coating performance of a protective layer and a cavitation resistive film on a heat generating element is excellent and durability is excellent and a manufacturing method of such a circuit board are provided. A surface portion of a wiring material layer is processed so that an etching speed of the surface portion is made higher than that of the material forming the wiring material layer. It is desirable to execute a process for forming at least one selected from a fluoride, a chloride, and a nitride of the material forming the wiring material layer into the surface portion of the wiring material layer.
摘要翻译： 一种用于液体排放装置的电路板，其中发热元件上的保护层和空穴电阻膜的涂层性能优异且耐久性优异，并且提供了这种电路板的制造方法。 处理布线材料层的表面部分，使得表面部分的蚀刻速度高于形成布线材料层的材料的蚀刻速度。 期望的是，将形成布线材料层的材料的氟化物，氯化物和氮化物中的至少一种形成到布线材料层的表面部分中。
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3.发明授权Manufacturing method of circuit board, circuit board, and liquid discharging apparatus 有权电路板，电路板和液体排放装置的制造方法公开(公告)号：US06838351B2
公开(公告)日：2005-01-04
申请号：US10805191
申请日：2004-03-22
CPC分类号： H01C17/065 , H01C17/281 , H05K1/167 , H05K3/02 , Y10T29/49126
摘要： A circuit board for a liquid discharging apparatus in which coating performance of a protective layer and a cavitation resistive film on a heat generating element is excellent and durability is excellent and a manufacturing method of such a circuit board are provided. A surface portion of a wiring material layer is processed so that an etching speed of the surface portion is made higher than that of the material forming the wiring material layer. It is desirable to execute a process for forming at least one selected from a fluoride, a chloride, and a nitride of the material forming the wiring material layer into the surface portion of the wiring material layer.
摘要翻译： 一种用于液体排放装置的电路板，其中发热元件上的保护层和空穴电阻膜的涂层性能优异且耐久性优异，并且提供了这种电路板的制造方法。 处理布线材料层的表面部分，使得表面部分的蚀刻速度高于形成布线材料层的材料的蚀刻速度。 期望的是，将形成布线材料层的材料的氟化物，氯化物和氮化物中的至少一种形成到布线材料层的表面部分中。
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公开(公告)号：US20050031996A1
公开(公告)日：2005-02-10
申请号：US10910271
申请日：2004-08-04
CPC分类号： H05K1/167 , B41J2/14072 , B41J2/14129 , B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1642 , B41J2/1643 , B41J2/1646 , H05K1/09 , H05K3/06 , H05K3/067 , H05K2201/0317 , H05K2203/0361
摘要： In order to provide a circuit substrate with a satisfactory step coverage by the protective layer and the anti-cavitation film in an edge portion of wirings and a liquid discharge head utilizing such circuit substrate, the invention provides a method for producing a circuit substrate provided, on an insulating surface of a substrate, with a plurality of elements each including a resistive layer and a pair of electrodes formed with a predetermined spacing on said resistive layer, including a step of forming an aluminum electrode wiring layer on the resistive layer, a step of isolating the electrode wiring layer by dry etching into each element, and a step of forming the electrode wiring into a tapered cross section with an etching solution containing phosphoric acid, nitric acid and a chelating agent capable of forming a complex with the wiring metal.
摘要翻译： 为了通过利用这种电路基板的布线边缘部分中的保护层和防空穴膜提供令人满意的阶梯覆盖的电路基板，本发明提供一种制造电路基板的方法， 在基板的绝缘表面上，多个元件各自包括电阻层和在所述电阻层上以预定间隔形成的一对电极，包括在电阻层上形成铝电极布线层的步骤，步骤 通过干蚀刻将电极配线层隔离成各元件，以及通过含有与配线金属形成络合物的磷酸，硝酸和螯合剂的蚀刻液将电极配线形成为锥形截面的工序。
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公开(公告)号：US20050078152A1
公开(公告)日：2005-04-14
申请号：US10968901
申请日：2004-10-21
IPC分类号： B41J2/05 , H01C17/065 , H01C17/28 , H05K1/16 , H05K3/02
CPC分类号： H01C17/065 , H01C17/281 , H05K1/167 , H05K3/02 , Y10T29/49126
摘要： A circuit board for a liquid discharging apparatus in which coating performance of a protective layer and a cavitation resistive film on a heat generating element is excellent and durability is excellent and a manufacturing method of such a circuit board are provided. A surface portion of a wiring material layer is processed so that an etching speed of the surface portion is made higher than that of the material forming the wiring material layer. It is desirable to execute a process for forming at least one selected from a fluoride, a chloride, and a nitride of the material forming the wiring material layer into the surface portion of the wiring material layer.
摘要翻译： 一种用于液体排放装置的电路板，其中发热元件上的保护层和空穴电阻膜的涂层性能优异且耐久性优异，并且提供了这种电路板的制造方法。 处理布线材料层的表面部分，使得表面部分的蚀刻速度高于形成布线材料层的材料的蚀刻速度。 期望的是，将形成布线材料层的材料的氟化物，氯化物和氮化物中的至少一种形成到布线材料层的表面部分中。
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公开(公告)号：US20060068570A1
公开(公告)日：2006-03-30
申请号：US11272869
申请日：2005-11-15
申请人： Yukihiro Hayakawa , Genzo Momma , Masato Kamiichi
发明人： Yukihiro Hayakawa , Genzo Momma , Masato Kamiichi
IPC分类号： H01L21/20
CPC分类号： B41J2/14129 , B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1642 , H01L23/481 , H01L29/0657 , H01L2924/0002 , H01L2924/00
摘要： A structure is constructed having a through hole in a substrate of silicon or the like by a decreased number of steps in production and with improved reliability. A silicon nitride film is formed in contact with an upper surface of a silicon oxide film at least on a portion of the substrate near the edge of a through hole, thereby improving step coverage of the silicon nitride film. The silicon oxide film and silicon nitride film function as a membrane during formation of the through hole by etching from the back side of the substrate.
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7.发明授权Structure with through hole, production method thereof, and liquid discharge head 有权具有通孔的结构，其制造方法和排液头公开(公告)号：US07270759B2
公开(公告)日：2007-09-18
申请号：US11272869
申请日：2005-11-15
申请人： Yukihiro Hayakawa , Genzo Momma , Masato Kamiichi
发明人： Yukihiro Hayakawa , Genzo Momma , Masato Kamiichi
IPC分类号： B41J2/16
CPC分类号： B41J2/14129 , B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1642 , H01L23/481 , H01L29/0657 , H01L2924/0002 , H01L2924/00
摘要： A structure is constructed having a through hole in a substrate of silicon or the like by a decreased number of steps in production and with improved reliability. A silicon nitride film is formed in contact with an upper surface of a silicon oxide film at least on a portion of the substrate near the edge of a through hole, thereby improving step coverage of the silicon nitride film. The silicon oxide film and silicon nitride film function as a membrane during formation of the through hole by etching from the back side of the substrate.
摘要翻译： 通过生产步骤减少和可靠性提高，构造了在硅等的基板中具有通孔的结构。 至少在通孔的边缘附近的基板的一部分上形成与氧化硅膜的上表面接触的氮化硅膜，从而提高氮化硅膜的台阶覆盖。 氧化硅膜和氮化硅膜在从基板的背面进行蚀刻形成通孔期间用作膜。
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8.发明授权Structure with through hole, production method thereof, and liquid discharge head 有权具有通孔的结构，其制造方法和排液头公开(公告)号：US07018020B2
公开(公告)日：2006-03-28
申请号：US10270650
申请日：2002-10-16
申请人： Yukihiro Hayakawa , Genzo Monma , Masato Kamiichi
发明人： Yukihiro Hayakawa , Genzo Monma , Masato Kamiichi
IPC分类号： B41J2/05
CPC分类号： B41J2/14129 , B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1642 , H01L23/481 , H01L29/0657 , H01L2924/0002 , H01L2924/00
摘要： A structure is constructed having a through hole in a substrate of silicon or the like by a decreased number of steps in production and with improved reliability. A silicon nitride film is formed in contact with an upper surface of a silicon oxide film at least on a portion of the substrate near the edge of a through hole, thereby improving step coverage of the silicon nitride film. The silicon oxide film and silicon nitride film function as a membrane during formation of the through hole by etching from the back side of the substrate.
摘要翻译： 通过生产步骤减少和可靠性提高，构造了在硅等的基板中具有通孔的结构。 至少在通孔的边缘附近的基板的一部分上形成与氧化硅膜的上表面接触的氮化硅膜，从而提高氮化硅膜的台阶覆盖。 氧化硅膜和氮化硅膜在从基板的背面进行蚀刻形成通孔期间用作膜。
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公开(公告)号：US20090073228A1
公开(公告)日：2009-03-19
申请号：US12197499
申请日：2008-08-25
申请人： Keiichi Sasaki , Yukihiro Hayakawa
发明人： Keiichi Sasaki , Yukihiro Hayakawa
CPC分类号： H01L21/308 , B41J2/1603 , B41J2/1629 , B41J2/1631 , B41J2/1642 , B41J2202/13 , H01L29/06
摘要： A through-hole forming method includes steps of forming a first impurity region (102a) around a region where a through-hole is to be formed in the first surface of a silicon substrate (101), the first impurity region (102) being higher in impurity concentration than the silicon substrate (101), forming a second impurity region (102b) at a position adjacent to the first impurity region (102a) in the depth direction of the silicon substrate (101), the second impurity region (102b) being higher in impurity concentration than the first impurity region (102a), forming an etch stop layer (103) on the first surface, forming an etch mask layer (104) having an opening on the second surface of the silicon substrate (101) opposite to the first surface, and etching the silicon substrate (101) until at least the etch stop layer (103) is exposed via the opening.
摘要翻译： 通孔形成方法包括以下步骤：在硅衬底（101）的第一表面中形成在要形成通孔的区域周围的第一杂质区域（102a），第一杂质区域（102）更高 在所述硅衬底（101）的深度方向上与所述第一杂质区（102a）相邻的位置形成第二杂质区（102b），所述第二杂质区（102b） 杂质浓度高于第一杂质区（102a），在第一表面上形成蚀刻停止层（103），形成在硅衬底（101）的第二表面上具有开口的蚀刻掩模层（104） 并且蚀刻硅衬底（101），直到至少蚀刻停止层（103）经由开口露出。
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公开(公告)号：US08409452B2
公开(公告)日：2013-04-02
申请号：US12197499
申请日：2008-08-25
申请人： Keiichi Sasaki , Yukihiro Hayakawa
发明人： Keiichi Sasaki , Yukihiro Hayakawa
IPC分类号： H01B13/00
CPC分类号： H01L21/308 , B41J2/1603 , B41J2/1629 , B41J2/1631 , B41J2/1642 , B41J2202/13 , H01L29/06
摘要： A through-hole forming method includes steps of forming a first impurity region (102a) around a region where a through-hole is to be formed in the first surface of a silicon substrate (101), the first impurity region (102) being higher in impurity concentration than the silicon substrate (101), forming a second impurity region (102b) at a position adjacent to the first impurity region (102a) in the depth direction of the silicon substrate (101), the second impurity region (102b) being higher in impurity concentration than the first impurity region (102a), forming an etch stop layer (103) on the first surface, forming an etch mask layer (104) having an opening on the second surface of the silicon substrate (101) opposite to the first surface, and etching the silicon substrate (101) until at least the etch stop layer (103) is exposed via the opening.
摘要翻译： 通孔形成方法包括以下步骤：在硅衬底（101）的第一表面中形成在要形成通孔的区域周围的第一杂质区域（102a），第一杂质区域（102）更高 在所述硅衬底（101）的深度方向上与所述第一杂质区（102a）相邻的位置形成第二杂质区（102b），所述第二杂质区（102b） 杂质浓度高于第一杂质区（102a），在第一表面上形成蚀刻停止层（103），形成在硅衬底（101）的第二表面上具有开口的蚀刻掩模层（104） 并且蚀刻硅衬底（101），直到至少蚀刻停止层（103）经由开口露出。
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