中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

13 records (took 0.011 seconds)

    Methods of Forming Trench Isolation in the Fabrication of Integrated Circuitry and Methods of Fabricating Integrated Circuitry
    4.
    发明申请
    Methods of Forming Trench Isolation in the Fabrication of Integrated Circuitry and Methods of Fabricating Integrated Circuitry 有权
    集成电路制造中形成沟槽隔离的方法和制造集成电路的方法

    公开(公告)号：US20110300689A1

    公开(公告)日：2011-12-08

    申请号：US13211174

    申请日：2011-08-16

    Applicant: Robert D. Patraw ,  M. Ceredig Roberts ,  Keith R. Cook

    Inventor： Robert D. Patraw ,  M. Ceredig Roberts ,  Keith R. Cook

    IPC: H01L21/762

    CPC classification number: H01L21/76229

    Abstract: First and second isolation trenches are formed into semiconductive material of a semiconductor substrate. The first isolation trench has a narrowest outermost cross sectional dimension which is less than that of the second isolation trench. An insulative layer is deposited to within the first and second isolation trenches effective to fill remaining volume of the first isolation trench within the semiconductive material but not that of the second isolation trench within the semiconductive material. The insulative layer comprises silicon dioxide deposited from flowing TEOS to the first and second isolation trenches. A spin-on-dielectric is deposited over the silicon dioxide deposited from flowing the TEOS within the second isolation trench within the semiconductive material, but not within the first isolation trench within the semiconductive material. The spin-on-dielectric is deposited effective to fill remaining volume of the second isolation trench within the semiconductive material. The spin-on-dielectric is densified within the second isolation trench.

    Abstract translation: 第一和第二隔离沟槽形成半导体衬底的半导体材料。 第一隔离沟槽具有比第二隔离沟槽小的最小横截面尺寸。 绝缘层沉积在第一和第二隔离沟槽内，有效地填充半导体材料内的第一隔离沟槽的剩余容积，而不是半导体材料内的第二隔离沟槽的剩余体积。 绝缘层包括从流动TEOS沉积到第一和第二隔离沟槽的二氧化硅。 通过在半导体材料内的第二隔离沟槽内流动TEOS，而不是在半导体材料内的第一隔离沟槽内，在沉积的二氧化硅上沉积自旋电介质。 沉积电介质有效地填充半导体材料内的第二隔离沟槽的剩余体积。 旋转电介质在第二隔离沟槽内致密化。

    Method and apparatus for wiping a windshield
    7.
    发明授权
    Method and apparatus for wiping a windshield 失效
    用于擦拭挡风玻璃的方法和装置

    公开(公告)号：US5616182A

    公开(公告)日：1997-04-01

    申请号：US566836

    申请日：1995-12-04

    Applicant: Keith R. Cook

    Inventor： Keith R. Cook

    IPC: B60S1/02 ,  B60S1/04 ,  B60S1/38

    CPC classification number: B60S1/0452 ,  B60S1/02 ,  B60S1/38 ,  B60S2001/3829

    Abstract: A wiping system and method for wiping a windshield is shown. The wiping system comprises frictional material or a wiper material which is applied directly to either a wiper blade or a windshield in at least one reversal area on the windshield where the wiping blade is driven from a first direction to a second direction which is generally opposite that of the first direction. The wiper material is coated or integrally formed as part of the windshield in the reversal areas to facilitate increasing the friction between an edge of the wiper blade and a surface of the windshield which, in turn, facilitates causing the blade to flip from a first wipe side to a second wipe side, thereby reducing or eliminating "chisel chatter" problems of the past.

    Abstract translation: 示出了用于擦拭挡风玻璃的擦拭系统和方法。 擦拭系统包括摩擦材料或擦拭材料，其直接施加到挡风玻璃上的至少一个反转区域中的刮水片或挡风玻璃上，其中擦拭刮板从第一方向被驱动到第二方向 的第一个方向。 擦拭器材料被涂覆或整体地形成为在反转区域中的挡风玻璃的一部分，以便于增加刮水片的边缘与挡风玻璃的表面之间的摩擦，这进而有助于使刮板从第一擦拭物 一边到另一个擦拭面，从而减少或消除过去的“凿子喋喋不休”问题。

    Motor reversing circuit for vehicle windshield wiper
    8.
    发明授权
    Motor reversing circuit for vehicle windshield wiper 失效
    车用挡风玻璃刮水器电机倒车回路

    公开(公告)号：US4355270A

    公开(公告)日：1982-10-19

    申请号：US326801

    申请日：1981-12-02

    Applicant: Keith R. Cook ,  John E. Pozenel ,  Donald E. Graham

    Inventor： Keith R. Cook ,  John E. Pozenel ,  Donald E. Graham

    IPC: B60S1/08 ,  H02P3/08 ,  H02P1/04

    CPC classification number: B60S1/08

    Abstract: A motor reversing control circuit for a motor vehicle windshield wiper has a motor driven cam with a first lobe defining a park position for the wiper and a second lobe defining, in relation to the first, a wipe angle. A park switch is actuated by either lobe to reverse the output of a flip-flop which controls motor direction. The motor is activated in response to one or more of (a) a main switch, (b) the unactuated park switch and (c) the flip-flop output signalling wiper movement toward the park position. An optional timer effective to delay the motor activation in response to the main switch provides a pause in the park position.

    Abstract translation: 用于机动车辆挡风玻璃刮水器的电动机反转控制电路具有电动机驱动凸轮，其具有限定用于刮水器的停放位置的第一凸角，以及相对于第一凸起限定擦拭角度的第二凸角。 停止开关由任一个凸起启动，以反转控制电机方向的触发器的输出。 响应于（a）主开关，（b）未启动驻车开关和（c）触发器输出信号擦拭器朝向停放位置移动的一个或多个，电动机被激活。 有效延迟电动机启动响应主开关的可选定时器在驻车位置上暂停。

    Methods of forming trench isolation in the fabrication of integrated circuitry and methods of fabricating integrated circuitry
    9.
    发明授权
    Methods of forming trench isolation in the fabrication of integrated circuitry and methods of fabricating integrated circuitry 有权
    在集成电路的制造中形成沟槽隔离的方法和制造集成电路的方法

    公开(公告)号：US08349699B2

    公开(公告)日：2013-01-08

    申请号：US13211174

    申请日：2011-08-16

    Applicant: Robert D. Patraw ,  Martin Ceredig Roberts ,  Keith R. Cook

    Inventor： Robert D. Patraw ,  Martin Ceredig Roberts ,  Keith R. Cook

    IPC: H01L21/76

    CPC classification number: H01L21/76229

    Abstract: First and second isolation trenches are formed into semiconductive material of a semiconductor substrate. The first isolation trench has a narrowest outermost cross sectional dimension which is less than that of the second isolation trench. An insulative layer is deposited to within the first and second isolation trenches effective to fill remaining volume of the first isolation trench within the semiconductive material but not that of the second isolation trench within the semiconductive material. The insulative layer comprises silicon dioxide deposited from flowing TEOS to the first and second isolation trenches. A spin-on-dielectric is deposited over the silicon dioxide deposited from flowing the TEOS within the second isolation trench within the semiconductive material, but not within the first isolation trench within the semiconductive material. The spin-on-dielectric is deposited effective to fill remaining volume of the second isolation trench within the semiconductive material. The spin-on-dielectric is densified within the second isolation trench.

    Abstract translation: 第一和第二隔离沟槽形成半导体衬底的半导体材料。 第一隔离沟槽具有比第二隔离沟槽小的最小横截面尺寸。 绝缘层沉积在第一和第二隔离沟槽内，有效地填充半导体材料内的第一隔离沟槽的剩余容积，而不是半导体材料内的第二隔离沟槽的剩余体积。 绝缘层包括从流动TEOS沉积到第一和第二隔离沟槽的二氧化硅。 通过在半导体材料内的第二隔离沟槽内流动TEOS，而不是在半导体材料内的第一隔离沟槽内，在沉积的二氧化硅上沉积自旋电介质。 沉积电介质有效地填充半导体材料内的第二隔离沟槽的剩余体积。 旋转电介质在第二隔离沟槽内致密化。

    Methods of forming trench isolation in the fabrication of integrated circuitry and methods of fabricating integrated circuitry
    10.
    发明授权
    Methods of forming trench isolation in the fabrication of integrated circuitry and methods of fabricating integrated circuitry 有权
    在集成电路的制造中形成沟槽隔离的方法和制造集成电路的方法

    公开(公告)号：US08012847B2

    公开(公告)日：2011-09-06

    申请号：US11097876

    申请日：2005-04-01

    Applicant: Robert D. Patraw ,  M. Ceredig Roberts ,  Keith R. Cook

    Inventor： Robert D. Patraw ,  M. Ceredig Roberts ,  Keith R. Cook

    IPC: H01L21/76

    CPC classification number: H01L21/76229

    Abstract: First and second isolation trenches are formed into semiconductive material of a semiconductor substrate. The first isolation trench has a narrowest outermost cross sectional dimension which is less than that of the second isolation trench. An insulative layer is deposited to within the first and second isolation trenches effective to fill remaining volume of the first isolation trench within the semiconductive material but not that of the second isolation trench within the semiconductive material. The insulative layer comprises silicon dioxide deposited from flowing TEOS to the first and second isolation trenches. A spin-on-dielectric is deposited over the silicon dioxide deposited from flowing the TEOS within the second isolation trench within the semiconductive material, but not within the first isolation trench within the semiconductive material. The spin-on-dielectric is deposited effective to fill remaining volume of the second isolation trench within the semiconductive material. The spin-on-dielectric is densified within the second isolation trench.

    Abstract translation: 第一和第二隔离沟槽形成半导体衬底的半导体材料。 第一隔离沟槽具有比第二隔离沟槽小的最小横截面尺寸。 绝缘层沉积在第一和第二隔离沟槽内，有效地填充半导体材料内的第一隔离沟槽的剩余容积，而不是半导体材料内的第二隔离沟槽的剩余体积。 绝缘层包括从流动TEOS沉积到第一和第二隔离沟槽的二氧化硅。 通过在半导体材料内的第二隔离沟槽内流动TEOS，而不是在半导体材料内的第一隔离沟槽内，在沉积的二氧化硅上沉积自旋电介质。 沉积电介质有效地填充半导体材料内的第二隔离沟槽的剩余体积。 旋转电介质在第二隔离沟槽内致密化。

Patent Agency Ranking