公开(公告)号：US06551896B2

公开(公告)日：2003-04-22

申请号：US09913768

申请日：2001-08-16

申请人： Keizo Hosoda ,  Yusuke Muraki ,  Atsushi Sato ,  Harunori Ushikawa

发明人： Keizo Hosoda ,  Yusuke Muraki ,  Atsushi Sato ,  Harunori Ushikawa

IPC分类号： H01L2994

CPC分类号： H01L28/40 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/32105 ,  H01L21/3211 ,  H01L28/56 ,  H01L29/94

摘要： Rapid thermal nitridation is carried out to form a nitride film on a lower electrode which is made of silicon, and a tantalum oxide dielectric film is further formed thereon. Then, wet oxidization is carried out to oxidize the lower electrode through the dielectric film and the nitride film, thus an oxide film is formed between the lower electrode and the nitride film. Further, silicon which is not bonded to nitrogen in the nitride film is oxidized, thus an oxide film whose effective thickness is equal to or greater than 2 nm. The oxidization also recrystallizes the dielectric film. Finally, an upper electrode is formed, and the capacitor is completed.

摘要翻译： 进行快速热氮化以在由硅制成的下电极上形成氮化物膜，并且在其上进一步形成氧化钽介电膜。 然后，进行湿式氧化，以通过电介质膜和氮化物膜氧化下部电极，由此在下部电极和氮化物膜之间形成氧化膜。 此外，氮化物膜中不与氮结合的硅被氧化，因此有效厚度等于或大于2nm的氧化物膜。 氧化也使电介质膜重结晶。 最后，形成上电极，电容器完成。

公开(公告)号：US06355582B1

公开(公告)日：2002-03-12

申请号：US09662328

申请日：2000-09-14

申请人： Keizo Hosoda ,  Nobuaki Shigematsu ,  Yusuke Muraki ,  Atsushi Sato

发明人： Keizo Hosoda ,  Nobuaki Shigematsu ,  Yusuke Muraki ,  Atsushi Sato

IPC分类号： H01L2131

CPC分类号： H01L21/28202 ,  C23C16/345 ,  H01L21/3185 ,  H01L29/513 ,  H01L29/518

摘要： In a silicon nitride film formation method, a substrate to be subjected to film formation is heated, and silicon tetrachloride and ammonia gases are supplied to the substrate heated to a predetermined temperature. The ratio of the partial pressure of the silicon tetrachloride gas to that of the ammonia gas is set to not less than 0.5.

摘要翻译： 在氮化硅膜形成方法中，加热成膜的基板，向加热到规定温度的基板供给四氯化硅和氨气。 四氯化硅气体的分压与氨气的分压比设定为0.5以上。

公开(公告)号：US06797560B2

公开(公告)日：2004-09-28

申请号：US09859513

申请日：2001-05-18

申请人： Keizo Hosoda ,  Yusuke Muraki

发明人： Keizo Hosoda ,  Yusuke Muraki

IPC分类号： H01L218242

CPC分类号： H01L21/02356 ,  C23C16/405 ,  C23C16/56 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/31604 ,  H01L28/40

摘要： A tantalum oxide film is formed on a lower conductive film by vapor-deposition, and then is treated with active oxygen species. The treated film is annealed at a temperature lower than the crystallization temperature of tantalum oxide by 10 to 80° C. in an inert atmosphere. Subsequently, an upper conductive film is formed on the annealed tantalum oxide film.

摘要翻译： 通过气相沉积在下导电膜上形成氧化钽膜，然后用活性氧物质处理。 在惰性气氛下，将处理过的膜在比氧化钽的结晶温度低的温度下退火10〜80℃。 随后，在退火的氧化钽膜上形成上导电膜。

公开(公告)号：US06399484B1

公开(公告)日：2002-06-04

申请号：US09425971

申请日：1999-10-25

申请人： Hideaki Yamasaki ,  Satoshi Yonezawa ,  Susumu Arima ,  Yumiko Kawano ,  Mitsuhiro Tachibana ,  Keizo Hosoda

发明人： Hideaki Yamasaki ,  Satoshi Yonezawa ,  Susumu Arima ,  Yumiko Kawano ,  Mitsuhiro Tachibana ,  Keizo Hosoda

IPC分类号： H01L214763

CPC分类号： C23C16/45565 ,  C23C16/0281 ,  C23C16/34 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/4557 ,  C23C16/45574 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/32051

摘要： A semiconductor device fabricating method includes a preparatory process that brings a first source gas containing tungsten atoms into contact with a workpiece and that does not bring a second source gas containing nitrogen atoms into contact with the workpiece, and a film forming process that forms a tungsten nitride film on the workpiece by using the first and the second source gases so as to fabricate a semiconductor device. The semiconductor device fabricating method is capable of preventing the tungsten nitride film from peeling off from a layer underlying the same when the tungsten nitride film is subjected to heat treatment.

摘要翻译： 一种半导体器件制造方法，包括使含有钨原子的第一源气体与工件接触并且不会使含有氮原子的第二源气体与工件接触的制备方法，以及形成钨 通过使用第一和第二源气体在工件上形成氮化物膜，以制造半导体器件。 当氮化钨膜进行热处理时，半导体器件制造方法能够防止氮化钨膜从其下面的层剥离。

公开(公告)号：US06794308B2

公开(公告)日：2004-09-21

申请号：US09727547

申请日：2000-12-04

申请人： Ming Jang Hwang ,  Keizo Hosoda ,  Shintaro Aoyama ,  Tadashi Terasaki ,  Tsuyoshi Tamaru

发明人： Ming Jang Hwang ,  Keizo Hosoda ,  Shintaro Aoyama ,  Tadashi Terasaki ,  Tsuyoshi Tamaru

IPC分类号： H01L2131

CPC分类号： C23C16/45519 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45521 ,  C23C16/4557 ,  C23C16/4558

摘要： A method of reducing by-product deposition inside wafer processing equipment includes providing a chamber having a peripheral inner wall and placing a semiconductor wafer within the chamber. The method also includes placing a ring within the chamber proximate the peripheral inner wall and introducing a plurality of reactant gases into the chamber and reacting the gases. The method also includes introducing a heated gas into the chamber through the ring proximate the peripheral inner wall to increase the temperature of the peripheral inner wall.

摘要翻译： 减少晶片处理设备内的副产物沉积的方法包括提供具有周边内壁并将半导体晶片放置在室内的室。 该方法还包括将腔环放置在邻近周边内壁的腔室内，并将多个反应气体引入腔室并使气体反应。 该方法还包括通过靠近周围内壁的环将加热的气体引入室中，以增加周边内壁的温度。

公开(公告)号：US06730613B1

公开(公告)日：2004-05-04

申请号：US09354459

申请日：1999-07-15

申请人： Ming Jang Hwang ,  Keizo Hosoda ,  Shintaro Aoyama ,  Tadashi Terasaki ,  Tsuyoshi Tamaru

发明人： Ming Jang Hwang ,  Keizo Hosoda ,  Shintaro Aoyama ,  Tadashi Terasaki ,  Tsuyoshi Tamaru

IPC分类号： H01L2131

CPC分类号： C23C16/45521 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/4557 ,  C23C16/4558

摘要： A method of reducing by-product deposition inside wafer processing equipment includes providing a chamber having a peripheral inner wall and placing a semiconductor wafer within the chamber. The method also includes placing a ring within the chamber proximate the peripheral inner wall and introducing a plurality of reactant gases into the chamber and reacting the gases. The method also includes introducing a heated gas into the chamber through the ring proximate the peripheral inner wall to increase the temperature of the peripheral inner wall.

公开(公告)号：US4596801A

公开(公告)日：1986-06-24

申请号：US589018

申请日：1984-03-13

申请人： Hiroshi Sugiyama ,  Keizo Hosoda ,  Yoshikazu Kumagai ,  Masaki Takeuchi ,  Masanori Okada

发明人： Hiroshi Sugiyama ,  Keizo Hosoda ,  Yoshikazu Kumagai ,  Masaki Takeuchi ,  Masanori Okada

IPC分类号： A01N43/86 ,  C07D413/04 ,  C07D265/14 ,  C07D265/20 ,  C07D265/22

CPC分类号： C07D413/04 ,  A01N43/86

摘要： Novel 4H-3,1-benzoxazine derivative of the formula: ##STR1## wherein X and Y each independently represent a halogen atom of a lower alkyl group; m and n each independently represent an integer of 0 to 2, and when m or n is 2, the plurality or each of X or Y may have the same or different meanings; R is a hydrogen atom, an alkyloxy group, an alkynyloxy group, an alkylthio group or an alkenylthio group, and a process for their production are provided. The compounds are highly effective against pathogenic fungi while being well tolerated by cultivated plants.

摘要翻译： 具有下式的新颖的4H-3,1-苯并恶嗪衍生物：其中X和Y各自独立地表示低级烷基的卤素原子; m和n各自独立地表示0〜2的整数，当m或n为2时，X或Y的多个或多个可以相同或不同， R是氢原子，烷氧基，炔氧基，烷硫基或链烯硫基，提供它们的制造方法。 这些化合物对抗病原菌具有高度的抗性，同时被栽培植物耐受良好。

公开(公告)号：US4590198A

公开(公告)日：1986-05-20

申请号：US578048

申请日：1984-02-07

申请人： Hiroshi Sugiyama ,  Keizo Hosoda ,  Masanori Okada ,  Yoshitaka Iwane ,  Yasushi Murakami

发明人： Hiroshi Sugiyama ,  Keizo Hosoda ,  Masanori Okada ,  Yoshitaka Iwane ,  Yasushi Murakami

IPC分类号： A01N43/40 ,  C07D213/81 ,  C07D405/12 ,  A61K31/455

CPC分类号： C07D213/81 ,  A01N43/40 ,  C07D405/12

摘要： Novel acetal compounds of the formula: ##STR1## wherein X is a halogen atom, a trifluromethyl group or a lower alkyl group; Y is a halogen atom, a lower alkyl group or a lower alkyloxy group; m and n each independently are an integer of 0 to 2, and when m or n is 2, the plurality of each of X or Y may have the same or different meanings; R.sub.1 and R.sub.2 independently represent a saturated or unsaturated lower hydrocarbon residue, or R.sub.1 and R.sub.2 together form a substituted or unsubstituted alkylene chain which, when taken together with ##STR2## to which they are attached, form a ring structure, and a process for their production are provided. The compounds are highly effective against pathogenic fungi while being well tolerated by cultivated plants.

摘要翻译： 下式的新型缩醛化合物：其中X是卤素原子，三氟甲基或低级烷基; Y是卤素原子，低级烷基或低级烷氧基; m和n各自独立地为0至2的整数，当m或n为2时，X或Y中的每一个可以具有相同或不同的含义; R 1和R 2独立地表示饱和或不饱和的低级烃基，或者R 1和R 2一起形成取代或未取代的亚烷基链，当与它们所连接的一起形成环结构时，它们和 提供生产。 这些化合物对抗病原菌具有高度的抗性，同时被栽培植物耐受良好。