公开(公告)号：US06551896B2

公开(公告)日：2003-04-22

申请号：US09913768

申请日：2001-08-16

申请人： Keizo Hosoda ,  Yusuke Muraki ,  Atsushi Sato ,  Harunori Ushikawa

发明人： Keizo Hosoda ,  Yusuke Muraki ,  Atsushi Sato ,  Harunori Ushikawa

IPC分类号： H01L2994

CPC分类号： H01L28/40 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/32105 ,  H01L21/3211 ,  H01L28/56 ,  H01L29/94

摘要： Rapid thermal nitridation is carried out to form a nitride film on a lower electrode which is made of silicon, and a tantalum oxide dielectric film is further formed thereon. Then, wet oxidization is carried out to oxidize the lower electrode through the dielectric film and the nitride film, thus an oxide film is formed between the lower electrode and the nitride film. Further, silicon which is not bonded to nitrogen in the nitride film is oxidized, thus an oxide film whose effective thickness is equal to or greater than 2 nm. The oxidization also recrystallizes the dielectric film. Finally, an upper electrode is formed, and the capacitor is completed.

摘要翻译： 进行快速热氮化以在由硅制成的下电极上形成氮化物膜，并且在其上进一步形成氧化钽介电膜。 然后，进行湿式氧化，以通过电介质膜和氮化物膜氧化下部电极，由此在下部电极和氮化物膜之间形成氧化膜。 此外，氮化物膜中不与氮结合的硅被氧化，因此有效厚度等于或大于2nm的氧化物膜。 氧化也使电介质膜重结晶。 最后，形成上电极，电容器完成。

公开(公告)号：US08796142B2

公开(公告)日：2014-08-05

申请号：US11885345

申请日：2006-03-03

申请人： Narishi Gonohe ,  Satoru Toyoda ,  Harunori Ushikawa ,  Tomoyasu Kondo ,  Kyuzo Nakamura

发明人： Narishi Gonohe ,  Satoru Toyoda ,  Harunori Ushikawa ,  Tomoyasu Kondo ,  Kyuzo Nakamura

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/76859 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A tantalum nitride film rich in tantalum atoms is formed by simultaneously introducing a raw gas consisting of a coordination compound of elemental tantalum (Ta) having a coordinated ligand of formula: N═(R, R′) (wherein, R and R′ each represents an alkyl group having 1 to 6 carbon atoms) and NH3 gas into a film-forming chamber; reacting the raw gas with the NH3 gas; forming a reduced compound having Ta—NH3 on a substrate; and introducing a hydrogen atom-containing gas into the chamber to form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, show sufficiently high adherence to Cu film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to further enrich the film with tantalum.

摘要翻译： 通过同时引入由具有以下结构的配位配体的元素钽（Ta）的配位化合物组成的原料气体，形成富含钽原子的氮化钽膜：N =（R，R'）（其中，R和R'各自 代表具有1至6个碳原子的烷基）和NH 3气体进入成膜室; 使原料气与NH 3气反应; 在基材上形成具有Ta-NH 3的还原化合物; 并将含氢原子的气体引入到室中以形成富含钽原子的氮化钽膜。 所得到的氮化钽膜具有低电阻，C和N原子含量低，组成比高：Ta / N对Cu膜具有足够高的粘附性，因此可用作阻挡膜。 此外，根据溅射技术将钽颗粒注入到所得膜中，以进一步用钽来富集膜。

公开(公告)号：US08476161B2

公开(公告)日：2013-07-02

申请号：US12935746

申请日：2009-07-14

申请人： Shoichiro Kumamoto ,  Masamichi Harada ,  Harunori Ushikawa

发明人： Shoichiro Kumamoto ,  Masamichi Harada ,  Harunori Ushikawa

IPC分类号： H01L21/768 ,  C23C16/04 ,  C23C16/18

CPC分类号： H01L21/76846 ,  C23C16/045 ,  C23C16/18 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76882

摘要： Provided is a Cu electrical interconnection film forming method, wherein an adhesive layer (base film) having improved adhesiveness with a Cu electrical interconnection film is used, in a semiconductor device manufacturing process. After forming a barrier film on a substrate whereupon a hole or the like is formed, a PVD-Co film or a CVD-Co film or an ALD-Co film is formed on the barrier film. Then, after filling up or burying the hole or the like, which has the Co film formed on the surface, with a CVD-Cu film or a PVD-Cu film, heat treatment is performed at a temperature of 350° C. or below, and the Cu electrical interconnection film is formed.

摘要翻译： 提供了一种Cu电互连膜形成方法，其中在半导体器件制造工艺中使用具有改善的与Cu电互连膜的粘附性的粘合剂层（基膜）。 在基板上形成阻挡膜之后，形成孔等，在阻挡膜上形成PVD-Co膜或CVD-Co膜或ALD-Co膜。 然后，在用CVD-Cu膜或PVD-Cu膜填充或埋入具有形成在表面上的Co膜的孔等之后，在350℃或更低的温度下进行热处理 ，形成Cu电互连膜。

公开(公告)号：US20090162565A1

公开(公告)日：2009-06-25

申请号：US11885350

申请日：2006-03-03

申请人： Narishi Gonohe ,  Satoru Toyoda ,  Harunori Ushikawa ,  Tomoyasu Kondo ,  Kyuzo Nakamura

发明人： Narishi Gonohe ,  Satoru Toyoda ,  Harunori Ushikawa ,  Tomoyasu Kondo ,  Kyuzo Nakamura

IPC分类号： C23C14/14 ,  C23C16/34

CPC分类号： C23C16/34 ,  C23C14/18 ,  C23C14/48 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A tantalum nitride film is formed by introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N═(R, R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) and an oxygen atom-containing gas into a film-forming chamber to make them react with one another on a substrate and to thus form a compound represented by the formula: TaOxNy(R,R′)z according to the CVD technique; and then introducing an H atom-containing gas into the chamber to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to the electrical connection-forming film and can thus be useful as a barrier film. Moreover, tantalum particles can be implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.

摘要翻译： 通过引入由具有由以下通式表示的配位配体的元素钽（Ta）构成的配位化合物构成的原料气体形成氮化钽膜：N-（R，R'）（在式中，R和R '可以相同或不同，并且各自表示具有1至6个碳原子的烷基）和含氧原子的气体进入成膜室，以使它们在基材上彼此反应，从而形成表示的化合物 根据CVD技术，通式为TaOxNy（R，R'）z; 然后将含H原子的气体引入到室中，从而形成富含钽原子的氮化钽膜。 所得到的氮化钽膜具有低电阻，C原子和N原子含量低，组成比高的Ta / N可以确保对连接形成膜的粘附性足够高，因此可用作阻挡膜。 此外，可以根据溅射技术将钽颗粒注入到所得膜中，从而进一步用钽富集膜。

公开(公告)号：US08815737B2

公开(公告)日：2014-08-26

申请号：US13423946

申请日：2012-03-19

申请人： Yasushi Higuchi ,  Toshimitsu Uehigashi ,  Kazuhiro Sonoda ,  Harunori Ushikawa ,  Naoki Hanada

发明人： Yasushi Higuchi ,  Toshimitsu Uehigashi ,  Kazuhiro Sonoda ,  Harunori Ushikawa ,  Naoki Hanada

IPC分类号： H01L21/44 ,  H01L21/285 ,  C23C16/18 ,  C23C16/56 ,  H01L29/45

CPC分类号： H01L21/28518 ,  C23C16/18 ,  C23C16/56 ,  H01L21/28556 ,  H01L29/456

摘要： The method for the formation of a silicide film herein provided comprises the steps of forming an Ni film on the surface of a substrate mainly composed of Si and then heat-treating the resulting Ni film to thus form an NiSi film as an upper layer of the substrate, wherein, prior to the heat-treatment for the formation of the NiSi film, the Ni film is subjected to a preannealing treatment using H2 gas at a temperature which is less than the heat-treatment temperature and which never causes the formation of any NiSi film in order to remove any impurity present in the Ni film, and the resulting Ni film is then subjected to a silicide-annealing treatment to thus form the NiSi film.

摘要翻译： 本文提供的形成硅化物膜的方法包括以下步骤：在主要由Si构成的衬底的表面上形成Ni膜，然后热处理所得到的Ni膜，从而形成NiSi膜作为上层 基板，其中，在用于形成NiSi膜的热处理之前，使用H 2气体在低于热处理温度的温度下对Ni膜进行预退火处理，并且不会导致形成任何 NiSi膜以除去存在于Ni膜中的任何杂质，然后对所得的Ni膜进行硅化物退火处理，从而形成NiSi膜。

公开(公告)号：US08105468B2

公开(公告)日：2012-01-31

申请号：US11885341

申请日：2006-03-03

申请人： Narishi Gonohe ,  Satoru Toyoda ,  Harunori Ushikawa ,  Tomoyasu Kondo ,  Kyuzo Nakamura

发明人： Narishi Gonohe ,  Satoru Toyoda ,  Harunori Ushikawa ,  Tomoyasu Kondo ,  Kyuzo Nakamura

IPC分类号： C23C14/00 ,  C23C14/34

CPC分类号： H01L21/76859 ,  C23C16/34 ,  H01L21/28562 ,  H01L21/76843

摘要： A tantalum nitride film-forming method comprises the steps of introducing, into a vacuum chamber, a raw gas consisting of a coordination compound constituted by elemental Ta having a coordinated ligand represented by the general formula: N═(R,R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) to thus adsorb the gas on a substrate; then introducing an NH3 gas and then activated H radicals derived from a reactant gas into a vacuum chamber to thus remove the R(R′) groups bonded to the nitrogen atom present in the reaction product through cleavage, and to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to the distributing wire-forming film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.

摘要翻译： 氮化钽膜形成方法包括以下步骤：将真空气体引入真空室中，所述原料气体由具有由以下通式表示的配位配体的元素Ta组成的配位化合物组成：N =（R，R'）（在 式R和R'可以相同或不同，各自表示碳原子数为1〜6的烷基），从而将气体吸附在基板上; 然后引入NH 3气体，然后将来自反应气体的H自由基活化到真空室中，从而通过裂解除去与反应产物中存在的氮原子键合的R（R'）基团，从而形成氮化钽膜 富含钽原子。 所得到的氮化钽膜具有低电阻，C原子和N原子含量低，组成比高：Ta / N可以确保足够高的附着线分布线形成膜，因此可用作阻挡膜。 此外，根据溅射技术将钽颗粒注入到所得的膜中，从而进一步用钽富集膜。

公开(公告)号：US20090246375A1

公开(公告)日：2009-10-01

申请号：US11885399

申请日：2006-03-03

申请人： Narishi Gonohe ,  Satoru Toyoda ,  Harunori Ushikawa ,  Tomoyasu Kondo

发明人： Narishi Gonohe ,  Satoru Toyoda ,  Harunori Ushikawa ,  Tomoyasu Kondo

IPC分类号： C23C16/00

CPC分类号： H01L21/76843 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45534 ,  C23C16/45536 ,  C23C16/4554 ,  C23C16/45553 ,  H01L21/28562

摘要： A tantalum nitride film-forming method comprises the steps of introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N═(R,R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms), and a halogen gas into a vacuum chamber; and reacting these components with one another on a substrate to thus form a surface adsorption film comprising a mono-atomic or multi (several)-atomic layer and composed of a compound represented by the following general formula: TaNx(Hal)y(R, R′)z (in the formula, Hal represents a halogen atom), then introducing radicals generated from an H atom-containing compound to thus remove Ta—N bonds present in the resulting compound through breakage thereof and remove, at the same time, the remaining R(R′) groups bonded to the N atoms present in the compound through the cleavage thereof and to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to the distributing wire-forming film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.

摘要翻译： 氮化钽膜形成方法包括以下步骤：引入由具有由以下通式表示的配位配体的元素钽（Ta）构成的配位化合物构成的原料气体：N-（R，R'）（式 R和R'可以相同或不同，各自表示碳原子数1〜6的烷基），卤素气体进入真空室; 并将这些组分彼此反应在基底上，从而形成包含单原子或多（多个）原子层的表面吸附膜，并由以下通式表示的化合物组成：TaNx（Hal）y（R， R'）z（式中，Hal表示卤素原子），然后引入由含H原子的化合物产生的自由基，从而通过其残留除去所得化合物中存在的Ta-N键，同时除去 剩余的R（R'）基团通过其切割而与化合物中存在的N原子键合，从而形成富含钽原子的氮化钽膜。 所得到的氮化钽膜具有低电阻，C原子和N原子含量低，组成比高：Ta / N可以确保足够高的附着线分布线形成膜，因此可用作阻挡膜。 此外，根据溅射技术将钽颗粒注入到所得的膜中，从而进一步用钽富集膜。

公开(公告)号：US5536320A

公开(公告)日：1996-07-16

申请号：US206150

申请日：1994-03-07

申请人： Harunori Ushikawa ,  Kenji Tago

发明人： Harunori Ushikawa ,  Kenji Tago

IPC分类号： H01L21/31 ,  C23C16/44 ,  C23C16/54 ,  C30B25/14 ,  H01L21/22 ,  C23C16/00

CPC分类号： C23C16/54 ,  C23C16/4401 ,  C30B25/14 ,  Y10S414/138 ,  Y10S414/139 ,  Y10S414/14

摘要： A waiting space is provided below a processing vessel for processing objects to be processed. An objects to be processed mount which is movable up and down into the processing vessel is disposed in the waiting space for mounting objects to be processed. There is provided a natural oxide film generation suppressing gas supply system which supplies a natural oxide film generation suppressing gas for suppressing generation of natural oxide films on the surfaces of the objects to be processed, and a dried gas with a low dew point is supplied as a natural oxide film generation suppressing gas by the natural oxide film generation suppressing gas supply system. The processing apparatus can suppress generation of natural oxide films inexpensively and efficiently.

摘要翻译： 在处理容器的下面设置等待​​空间，用于处理待加工物体。 将待加工的可上下移动到处理容器中的物体设置在待加工物体的等待空间中。 提供了一种天然氧化膜发生抑制气体供应系统，其提供用于抑制待处理物体表面上的天然氧化物膜的产生的天然氧化物膜发生抑制气体，并且将具有低露点的干燥气体作为 通过天然氧化膜生成抑制气体供给系统的天然氧化物膜生成抑制气体。 该处理装置可以廉价且有效地抑制天然氧化膜的产生。

公开(公告)号：US08377207B2

公开(公告)日：2013-02-19

申请号：US12597589

申请日：2008-04-23

申请人： Tsuyoshi Kagami ,  Osamu Irino ,  Nobuyuki Kato ,  Harunori Ushikawa

发明人： Tsuyoshi Kagami ,  Osamu Irino ,  Nobuyuki Kato ,  Harunori Ushikawa

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/4585 ,  C23C16/45519 ,  H01L21/68735

摘要： In a purge gas assembly provided: in an outer circumference portion of a substrate stage, with a shoulder portion offset downward below a substrate mounting surface on an upper end of the substrate stage; a purge ring enclosing a stepped circumferential surface between the substrate mounting surface and the shoulder portion; and an annular gas ejection passage for ejecting the purge gas, the gas ejecting passage being defined between the stepped circumferential surface and an inner circumferential surface of the purge ring, an arrangement is made such that the purge gas can be ejected uniformly from the gas ejection passage over the entire circumference thereof and that the deposition of a film on an upper surface of the purge ring can also be restricted, and further that the construction is simplified. The purge ring has formed therein an annular groove which recesses from a lower surface thereof upward.

摘要翻译： 在吹扫气体组件中，其设置在衬底台的外周部分中，其肩部部分向下偏置在衬底台的上端上的衬底安装表面下方; 净化环，其包围所述基板安装表面和所述肩部之间的阶梯状周向表面; 以及用于喷射净化气体的环形气体喷射通道，气体喷射通道限定在台阶周向表面和净化环的内圆周表面之间，使排气能够均匀地从气体喷射 通过其整个圆周，并且还可以限制在清洗环的上表面上的膜的沉积，并且进一步简化了结构。 清洗环中形成有从其下表面向上凹进的环形槽。

公开(公告)号：US20120244701A1

公开(公告)日：2012-09-27

申请号：US13423946

申请日：2012-03-19

申请人： Yasushi Higuchi ,  Toshimitsu Uehigashi ,  Kazuhiro Sonoda ,  Harunori Ushikawa ,  Naoki Hanada

发明人： Yasushi Higuchi ,  Toshimitsu Uehigashi ,  Kazuhiro Sonoda ,  Harunori Ushikawa ,  Naoki Hanada

IPC分类号： H01L21/285 ,  C23C16/06 ,  C23C16/56 ,  C23C16/455

CPC分类号： H01L21/28518 ,  C23C16/18 ,  C23C16/56 ,  H01L21/28556 ,  H01L29/456

摘要： The method for the formation of a silicide film herein provided comprises the steps of forming an Ni film on the surface of a substrate mainly composed of Si and then heat-treating the resulting Ni film to thus form an NiSi film as an upper layer of the substrate, wherein, prior to the heat-treatment for the formation of the NiSi film, the Ni film is subjected to a preannealing treatment using H2 gas at a temperature which is less than the heat-treatment temperature and which never causes the formation of any NiSi film in order to remove any impurity present in the Ni film, and the resulting Ni film is then subjected to a silicide-annealing treatment to thus form the NiSi film.

摘要翻译： 本文提供的形成硅化物膜的方法包括以下步骤：在主要由Si构成的衬底的表面上形成Ni膜，然后热处理所得到的Ni膜，从而形成NiSi膜作为上层 基板，其中，在用于形成NiSi膜的热处理之前，使用H 2气体在低于热处理温度的温度下对Ni膜进行预退火处理，并且不会导致形成任何 NiSi膜以除去存在于Ni膜中的任何杂质，然后对所得的Ni膜进行硅化物退火处理，从而形成NiSi膜。