公开(公告)号：US06551896B2

公开(公告)日：2003-04-22

申请号：US09913768

申请日：2001-08-16

申请人： Keizo Hosoda ,  Yusuke Muraki ,  Atsushi Sato ,  Harunori Ushikawa

发明人： Keizo Hosoda ,  Yusuke Muraki ,  Atsushi Sato ,  Harunori Ushikawa

IPC分类号： H01L2994

CPC分类号： H01L28/40 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/32105 ,  H01L21/3211 ,  H01L28/56 ,  H01L29/94

摘要： Rapid thermal nitridation is carried out to form a nitride film on a lower electrode which is made of silicon, and a tantalum oxide dielectric film is further formed thereon. Then, wet oxidization is carried out to oxidize the lower electrode through the dielectric film and the nitride film, thus an oxide film is formed between the lower electrode and the nitride film. Further, silicon which is not bonded to nitrogen in the nitride film is oxidized, thus an oxide film whose effective thickness is equal to or greater than 2 nm. The oxidization also recrystallizes the dielectric film. Finally, an upper electrode is formed, and the capacitor is completed.

摘要翻译： 进行快速热氮化以在由硅制成的下电极上形成氮化物膜，并且在其上进一步形成氧化钽介电膜。 然后，进行湿式氧化，以通过电介质膜和氮化物膜氧化下部电极，由此在下部电极和氮化物膜之间形成氧化膜。 此外，氮化物膜中不与氮结合的硅被氧化，因此有效厚度等于或大于2nm的氧化物膜。 氧化也使电介质膜重结晶。 最后，形成上电极，电容器完成。

公开(公告)号：US06355582B1

公开(公告)日：2002-03-12

申请号：US09662328

申请日：2000-09-14

申请人： Keizo Hosoda ,  Nobuaki Shigematsu ,  Yusuke Muraki ,  Atsushi Sato

发明人： Keizo Hosoda ,  Nobuaki Shigematsu ,  Yusuke Muraki ,  Atsushi Sato

IPC分类号： H01L2131

CPC分类号： H01L21/28202 ,  C23C16/345 ,  H01L21/3185 ,  H01L29/513 ,  H01L29/518

摘要： In a silicon nitride film formation method, a substrate to be subjected to film formation is heated, and silicon tetrachloride and ammonia gases are supplied to the substrate heated to a predetermined temperature. The ratio of the partial pressure of the silicon tetrachloride gas to that of the ammonia gas is set to not less than 0.5.

摘要翻译： 在氮化硅膜形成方法中，加热成膜的基板，向加热到规定温度的基板供给四氯化硅和氨气。 四氯化硅气体的分压与氨气的分压比设定为0.5以上。

公开(公告)号：US06797560B2

公开(公告)日：2004-09-28

申请号：US09859513

申请日：2001-05-18

申请人： Keizo Hosoda ,  Yusuke Muraki

发明人： Keizo Hosoda ,  Yusuke Muraki

IPC分类号： H01L218242

CPC分类号： H01L21/02356 ,  C23C16/405 ,  C23C16/56 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/31604 ,  H01L28/40

摘要： A tantalum oxide film is formed on a lower conductive film by vapor-deposition, and then is treated with active oxygen species. The treated film is annealed at a temperature lower than the crystallization temperature of tantalum oxide by 10 to 80° C. in an inert atmosphere. Subsequently, an upper conductive film is formed on the annealed tantalum oxide film.

摘要翻译： 通过气相沉积在下导电膜上形成氧化钽膜，然后用活性氧物质处理。 在惰性气氛下，将处理过的膜在比氧化钽的结晶温度低的温度下退火10〜80℃。 随后，在退火的氧化钽膜上形成上导电膜。

公开(公告)号：US09153465B2

公开(公告)日：2015-10-06

申请号：US13172317

申请日：2011-06-29

申请人： Masaya Odagiri ,  Yusuke Muraki ,  Jin Fujihara

发明人： Masaya Odagiri ,  Yusuke Muraki ,  Jin Fujihara

IPC分类号： C23C16/50 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/67 ,  C23C16/40 ,  C23C16/458 ,  C23C16/46 ,  H01L21/687

CPC分类号： H01L21/6719 ,  C23C16/401 ,  C23C16/4582 ,  C23C16/46 ,  H01L21/67109 ,  H01L21/68742 ,  H01L21/68771 ,  H01L21/68785 ,  Y10T156/17 ,  Y10T156/1702

摘要： A substrate stage for mounting a substrate thereon includes a peripheral stage member on which a peripheral substrate portion of the substrate may be mounted, the peripheral substrate portion controlling a temperature of the peripheral substrate portion, a central stage member on which a central substrate portion of the substrate may be mounted, the central substrate portion controlling a temperature of the central substrate portion, and a support base that supports the peripheral stage member and the central stage member. A gap is formed between the peripheral stage member and the central stage member to keep the peripheral stage member and the central stage member from coming in contact with each other.

摘要翻译： 用于在其上安装基板的基板台包括：外围台构件，可以在其上安装基板的外围基板部分，外围基板部分控制周边基板部分的温度;中心台构件，其中中心基板部分 可以安装基板，中央基板部分控制中心基板部分的温度，以及支撑基座，其支撑外围台架部件和中央台部部件。 在周边台架部件和中央台架部件之间形成间隙，以使周边台架部件和中央台部部件相互接触。

公开(公告)号：US20090242129A1

公开(公告)日：2009-10-01

申请号：US12409664

申请日：2009-03-24

申请人： Tadashi Onishi ,  Shigeki Tozawa ,  Yusuke Muraki ,  Takafumi Nitoh

发明人： Tadashi Onishi ,  Shigeki Tozawa ,  Yusuke Muraki ,  Takafumi Nitoh

IPC分类号： B44C1/22 ,  C23C16/46

CPC分类号： H01L21/67069 ,  H01L21/31116 ,  H01L21/67109

摘要： A heat treatment apparatus for heat-treating a silicon substrate includes a mounting table for mounting and heating the silicon substrate thereon, wherein a cover made of any of silicon, silicon carbide, and aluminum nitride is placed on an upper surface of the mounting table. By covering the upper surface of the mounting table by the cover made of silicon or the like, metal contamination of the lower surface of the silicon substrate is suppressed.

摘要翻译： 用于热处理硅衬底的热处理设备包括用于在其上安装和加热硅衬底的安装台，其中由硅，碳化硅和氮化铝中的任何一个制成的盖子被放置在安装台的上表面上。 通过用硅等覆盖安装台的上表面，抑制了硅衬底的下表面的金属污染。

公开(公告)号：US08353986B2

公开(公告)日：2013-01-15

申请号：US11391390

申请日：2006-03-29

申请人： Yoshiaki Sasaski ,  Yusuke Muraki ,  Eiichi Nishimura ,  Yuko Ono

发明人： Yoshiaki Sasaski ,  Yusuke Muraki ,  Eiichi Nishimura ,  Yuko Ono

IPC分类号： C23F1/00 ,  C23C16/00 ,  H01L21/306

CPC分类号： H01L21/67742 ,  C23C16/4412 ,  C23C16/54 ,  H01L21/67017

摘要： In a substrate processing apparatus comprising a processing unit where a specific type of processing is executed on a wafer and a transfer chamber through which a wafer is carried into/out of the processing unit, the transfer chamber includes an air intake unit through which external air is drawn into the transfer chamber, a discharge unit disposed so as to face opposite the air intake unit, through which the discharge gas in the transfer chamber is discharged and a discharge gas filtering means disposed at the discharge unit and constituted with a harmful constituent eliminating filter through which a harmful constituent contained in the discharge gas, at least, is eliminated.

摘要翻译： 在包括处理单元的基板处理设备中，其中在晶片上执行特定类型的处理和通过晶片被输送到处理单元的传送室，传送室包括进气单元，通过该进气单元， 被抽吸到传送室中，排出单元设置成与进气单元相对，排气口中的排出气体通过排出单元排出，排出气体过滤装置设置在排出单元处，并且构成消除有害成分 至少消除了排出气体中含有的有害成分的过滤器。

公开(公告)号：US20120178263A1

公开(公告)日：2012-07-12

申请号：US13423722

申请日：2012-03-19

申请人： Shigeki TOZAWA ,  Yusuke Muraki ,  Tadashi Ilno ,  Daisuke Hayashi

发明人： Shigeki TOZAWA ,  Yusuke Muraki ,  Tadashi Ilno ,  Daisuke Hayashi

IPC分类号： H01L21/31

CPC分类号： H01L21/02057 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7848

摘要： [Problem] To provide a substrate processing apparatus capable of preventing adherence of hydrogen fluoride to an inner surface the like of a chamber.[Means for Solving] An apparatus housing and processing a substrate W in a chamber includes a hydrogen fluoride gas supply path 61 for supplying a hydrogen fluoride gas into a chamber 40, wherein a part or whole of an inner surface of the chamber 40 is formed of Al or Al alloy which has not been subjected to surface oxidation treatment. The chamber 40 includes a lid 52 closing an upper opening of a chamber main body 51, and at least an inner surface of the lid 52 is formed of the Al or Al alloy which has not been subjected to alumite treatment.

摘要翻译： [问题]提供一种能够防止氟化氢与室的内表面粘附的基板处理装置。 [解决手段]在室内容纳和处理基板W的装置包括用于将氟化氢气体供应到室40中的氟化氢气体供给路径61，其中形成室40的内表面的一部分或全部 的未经表面氧化处理的Al或Al合金。 室40包括封闭室主体51的上开口的盖52，并且盖52的至少内表面由未进行防氧化处理的Al或Al合金形成。

公开(公告)号：US07897498B2

公开(公告)日：2011-03-01

申请号：US11794325

申请日：2005-11-29

申请人： Glenn Gale ,  Yoshihiro Hirota ,  Yusuke Muraki ,  Genji Nakamura ,  Masato Kushibiki ,  Naoki Shindo ,  Akitaka Shimizu ,  Shigeo Ashigaki ,  Yoshihiro Kato

发明人： Glenn Gale ,  Yoshihiro Hirota ,  Yusuke Muraki ,  Genji Nakamura ,  Masato Kushibiki ,  Naoki Shindo ,  Akitaka Shimizu ,  Shigeo Ashigaki ,  Yoshihiro Kato

IPC分类号： H01L21/336 ,  H01L21/8324 ,  H01L21/76 ,  H01L21/3205 ,  H01L21/4763

CPC分类号： H01L21/28123 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32139 ,  Y10S438/931

摘要： The present invention is a method of manufacturing a semiconductor device from a layered body including: a semiconductor substrate; a high dielectric film formed on the semiconductor substrate; and an SiC-based film formed on a position upper than the high dielectric film, the SiC-based film having an anti-reflective function and a hardmask function. The present invention comprises a plasma-processing step for plasma-processing the SiC-based film and the high dielectric film to modify the SiC-based film and the high dielectric film by an action of a plasma; and a cleaning step for wet-cleaning the SiC-based film and the high dielectric film modified in the plasma-processing step to collectively remove the SiC-based film and the high dielectric film.

摘要翻译： 本发明是一种从层叠体制造半导体器件的方法，包括：半导体衬底; 形成在所述半导体基板上的高电介质膜; 以及形成在高于高介电膜的位置的SiC基膜，所述SiC基膜具有抗反射功能和硬掩模功能。 本发明包括等离子体处理步骤，用于等离子体处理SiC基膜和高介电膜，以通过等离子体的作用改性SiC基膜和高介电膜; 以及用于湿式清洁在等离子体处理步骤中改性的SiC基膜和高介电膜的清洁步骤，以共同地去除SiC基膜和高介电膜。

公开(公告)号：US20080268655A1

公开(公告)日：2008-10-30

申请号：US11794325

申请日：2005-11-29

申请人： Glenn Gale ,  Yoshihiro Hirota ,  Yusuke Muraki ,  Genji Nakamura ,  Masato Kushibiki ,  Naoki Shindo ,  Akitaka Shimizu ,  Shigeo Ashigaki ,  Yoshihiro Kato

发明人： Glenn Gale ,  Yoshihiro Hirota ,  Yusuke Muraki ,  Genji Nakamura ,  Masato Kushibiki ,  Naoki Shindo ,  Akitaka Shimizu ,  Shigeo Ashigaki ,  Yoshihiro Kato

IPC分类号： H01L21/469 ,  H01L21/00

CPC分类号： H01L21/28123 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32139 ,  Y10S438/931

摘要： The present invention is a method of manufacturing a semiconductor device from a layered body including: a semiconductor substrate; a high dielectric film formed on the semiconductor substrate; and an SiC-based film formed on a position upper than the high dielectric film, the SiC-based film having an anti-reflective function and a hardmask function. The present invention comprises a plasma-processing step for plasma-processing the SiC-based film and the high dielectric film to modify the SiC-based film and the high dielectric film by an action of a plasma; and a cleaning step for wet-cleaning the SiC-based film and the high dielectric film modified in the plasma-processing step to collectively remove the SiC-based film and the high dielectric film.

摘要翻译： 本发明是一种从层叠体制造半导体器件的方法，包括：半导体衬底; 形成在所述半导体基板上的高电介质膜; 以及形成在高于高介电膜的位置的SiC基膜，所述SiC基膜具有抗反射功能和硬掩模功能。 本发明包括等离子体处理步骤，用于等离子体处理SiC基膜和高介电膜，以通过等离子体的作用改性SiC基膜和高介电膜; 以及用于湿式清洁在等离子体处理步骤中改性的SiC基膜和高介电膜的清洁步骤，以共同地去除SiC基膜和高介电膜。

公开(公告)号：US09105586B2

公开(公告)日：2015-08-11

申请号：US12078958

申请日：2008-04-08

申请人： Shigeki Tozawa ,  Yusuke Muraki

发明人： Shigeki Tozawa ,  Yusuke Muraki

IPC分类号： H01L21/306 ,  H01L21/311 ,  H01L21/67

CPC分类号： H01L21/31138 ,  H01L21/67069 ,  H01L21/67155

摘要： An etching method includes preparing a target object such that a first oxide film made of silicon oxide containing at least one of B and P is formed on a substrate, a second oxide film made of silicon oxide containing neither of B and P is formed on the first oxide film, and a contact portion is present below an interface between the first oxide film and the second oxide film. The etching method further includes etching the second oxide film and the first oxide film, thereby forming a hole reaching the contact portion, and etching the first oxide film by a dry process using a gas containing HF, thereby expanding a portion of the hole adjacent to an upper side of the contact portion and inside the first oxide film.

摘要翻译： 蚀刻方法包括制备目标物体，使得在基板上形成由含有B和P中的至少一个的氧化硅制成的第一氧化物膜，在不含有B和P的氧化硅中形成的第二氧化物膜形成在 第一氧化物膜和接触部分存在于第一氧化物膜和第二氧化物膜之间的界面之下。 蚀刻方法还包括蚀刻第二氧化物膜和第一氧化物膜，从而形成到达接触部分的孔，并且通过使用含有HF的气体的干法来蚀刻第一氧化物膜，从而使孔的一部分与 接触部分的上侧和第一氧化膜内部。