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    Polymer, resist material and patterning processing
    1.
    发明申请
    Polymer, resist material and patterning processing 有权
    聚合物，抗蚀材料和图案加工

    公开(公告)号：US20050089796A1

    公开(公告)日：2005-04-28

    申请号：US10933013

    申请日：2004-09-01

    申请人： Kenji Funatsu ,  Tsunehiro Nishi ,  Shigehiro Nagura

    发明人： Kenji Funatsu ,  Tsunehiro Nishi ,  Shigehiro Nagura

    IPC分类号： C08F220/26 ,  C08F220/28 ,  G03C1/76 ,  G03F7/039 ,  H01L21/027

    CPC分类号： G03F7/0397 ,  C08F220/26 ,  Y10S430/111

    摘要： Provided is a polymer useful as a base resin of a resist material featuring a high resolution, patterns with less sidewall roughness, practically acceptable etching resistance, and a substantial margin allowed for heat treatment temperature after exposure. The polymer has a weight-average molecular weight of from 1,000 to 50,000 and comprises at least one repeating unit of formula (1) below, at least one repeating unit of formula (2) below and at least one repeating unit of formula (3) below. A resist material comprising the polymer is also provided. In addition, provided is a pattern formation process comprising steps of applying the resist material onto a substrate, heating the film, exposing the heated film through a photomask to high energy radiation or electron beam, heating the exposed film and then developing with a developer.

    摘要翻译： 提供了可用作抗蚀剂材料的基础树脂的聚合物，其特征在于具有高分辨率，具有较小侧壁粗糙度的图案，实际上可接受的耐蚀刻性，以及曝光后允许的热处理温度的显着余量。 所述聚合物的重均分子量为1,000至50,000，并且包含至少一种下式（1）的重复单元，至少一个下式的式（2）的重复单元和至少一个式（3）的重复单元， 下面。 还提供了包含聚合物的抗蚀剂材料。 此外，提供了图案形成方法，其包括以下步骤：将抗蚀剂材料施加到基底上，加热膜，将加热的膜通过光掩模曝光到高能量辐射或电子束，加热曝光的膜，然后用显影剂显影。

    Polymer, resist material and patterning processing
    2.
    发明授权
    Polymer, resist material and patterning processing 有权
    聚合物，抗蚀材料和图案加工

    公开(公告)号：US07157207B2

    公开(公告)日：2007-01-02

    申请号：US10933013

    申请日：2004-09-01

    申请人： Kenji Funatsu ,  Tsunehiro Nishi ,  Shigehiro Nagura

    发明人： Kenji Funatsu ,  Tsunehiro Nishi ,  Shigehiro Nagura

    IPC分类号： G03F7/39 ,  G03F7/30 ,  C08F124/00 ,  C08F134/02 ,  C08F24/00

    CPC分类号： G03F7/0397 ,  C08F220/26 ,  Y10S430/111

    摘要： Provided is a polymer useful as a base resin of a resist material featuring a high resolution, patterns with less sidewall roughness, practically acceptable etching resistance, and a substantial margin allowed for heat treatment temperature after exposure. The polymer has a weight-average molecular weight of from 1,000 to 50,000 and comprises at least one repeating unit of formula (1) below, at least one repeating unit of formula (2) below and at least one repeating unit of formula (3) below. A resist material comprising the polymer is also provided. In addition, provided is a pattern formation process comprising steps of applying the resist material onto a substrate, heating the film, exposing the heated film through a photomask to high energy radiation or electron beam, heating the exposed film and then developing with a developer

    摘要翻译： 提供了可用作抗蚀剂材料的基础树脂的聚合物，其特征在于具有高分辨率，具有较小侧壁粗糙度的图案，实际上可接受的耐蚀刻性，以及曝光后允许的热处理温度的显着余量。 所述聚合物的重均分子量为1,000至50,000，并且包含至少一种下式（1）的重复单元，至少一个下式的式（2）的重复单元和至少一个式（3）的重复单元， 下面。 还提供了包含聚合物的抗蚀剂材料。 此外，提供了一种图案形成方法，其包括以下步骤：将抗蚀剂材料施加到基底上，加热膜，将加热的膜通过光掩模曝光到高能量辐射或电子束，加热曝光的膜，然后用显影剂显影

    Polymer, resist composition and patterning process
    6.
    发明授权
    Polymer, resist composition and patterning process 有权
    聚合物，抗蚀剂组合物和图案化工艺

    公开(公告)号：US06703183B2

    公开(公告)日：2004-03-09

    申请号：US10241530

    申请日：2002-09-12

    申请人： Tsunehiro Nishi ,  Takeshi Kinsho ,  Koji Hasegawa ,  Satoshi Watanabe ,  Shigehiro Nagura

    发明人： Tsunehiro Nishi ,  Takeshi Kinsho ,  Koji Hasegawa ,  Satoshi Watanabe ,  Shigehiro Nagura

    IPC分类号： G03F7004

    CPC分类号： C08F220/18 ,  G03F7/0397

    摘要： A polymer comprising recurring units of formulae (1) and (2) wherein R1 and R3 are H or methyl, R2 and R4 are C1-15 alkyl, R5 to R8 are H, or R5 and R7, and R6 and R8 form trimethylene or 1,3-cyclopentylene and having a Mw of 1,000-500,000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution and etching resistance and lends itself to micropatterning with electron beams or deep-UV.

    摘要翻译： 包含式（1）和（2）的重复单元的聚合物，其中R 1和R 3为H或甲基，R 2和R 4为C 1-15烷基，R 5为R 新颖的是H或R 5和R 7，并且R 6和R 8形成三亚甲基或1,3-亚环戊基并具有1,000-500,000的Mw。 包含作为基础树脂的聚合物的抗蚀剂组合物对高能量辐射敏感，具有优异的灵敏度，分辨率和耐蚀刻性，并且适用于电子束或深紫外线的微图案化。

    Resist compositions
    8.
    发明授权
    Resist compositions 失效
    抗蚀剂组合物

    公开(公告)号：US06274286B1

    公开(公告)日：2001-08-14

    申请号：US09105003

    申请日：1998-06-26

    申请人： Jun Hatakeyama ,  Tsunehiro Nishi ,  Takeshi Nagata ,  Shigehiro Nagura

    发明人： Jun Hatakeyama ,  Tsunehiro Nishi ,  Takeshi Nagata ,  Shigehiro Nagura

    IPC分类号： G03F7004

    CPC分类号： G03F7/0045 ,  Y10S430/106

    摘要： A chemically amplified positive resist composition comprising at least one basic compound of the following general formula (1) or (2): wherein R1, R2, R3, R7, and R8 are independently normal, branched or cyclic alkylene groups having 1 to 20 carbon atoms, R4, R5, R6, R9, and R10 are independently hydrogen, alkyl groups having 1 to 20 carbon atoms or amino groups, R4 and R5, R5 and R6, R4 and R6, or R8, R5 and R5, and R9 and R10, taken together, may form a ring, letters k, m and n are integers of 0 to 20, with the proviso that hydrogen is excluded from R4, R5, R6, R9 and R10 when k, m or n is equal to 0. The resist compositions of the present invention are effective for preventing resist films from thinning and for increasing the focus margin of an isolated pattern.

    摘要翻译： 一种化学放大正型抗蚀剂组合物，其包含至少一种下列通式（1）或（2）的碱性化合物：其中R 1，R 2，R 3，R 7和R 8独立地为具有1至20个碳的正，支链或环状亚烷基 原子，R 4，R 5，R 6，R 9和R 10独立地是氢，具有1至20个碳原子的烷基或氨基，R 4和R 5，R 5和R 6，R 4和R 6，或R 8，R 5和R 5， R 10一起可以形成环，字母k，m和n是0至20的整数，条件是当k，m或n等于0时，从R4，R5，R6，R9和R10排除氢。 本发明的抗蚀剂组合物对于防止抗蚀剂膜变薄和增加隔离图案的聚焦边缘是有效的。

    Polymeric compounds, chemically amplified positive type resist materials and process for pattern formation
    9.
    发明授权
    Polymeric compounds, chemically amplified positive type resist materials and process for pattern formation 失效
    聚合化合物，化学放大正型抗蚀剂材料和图案形成工艺

    公开(公告)号：US6048661A

    公开(公告)日：2000-04-11

    申请号：US33147

    申请日：1998-03-02

    申请人： Tsunehiro Nishi ,  Jun Hatakeyama ,  Shigehiro Nagura ,  Toshinobu Ishihara

    发明人： Tsunehiro Nishi ,  Jun Hatakeyama ,  Shigehiro Nagura ,  Toshinobu Ishihara

    IPC分类号： G03F7/004 ,  G03F7/039

    CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/106 ,  Y10S430/11 ,  Y10S430/111

    摘要： Provided are polymeric compounds which, when used as base resins in resist materials, can yield chemical resist materials having high sensitivity, high resolution, a high exposure latitude, and good process adaptability, exhibiting excellent resistance to plasma etching, and giving resist patterns having high thermal resistance, as well as chemically amplified positive type resist materials using such polymeric compounds as base resins. These chemically amplified positive type resist materials use a base resin comprising a polymeric compound having a weight-average molecular weight of 1,000 to 500,000 and having one or more hydroxyl and/or carboxyl groups in the molecule, part or all of the hydrogen atoms of the hydroxyl and/or carboxyl groups being replaced by groups of the following general formula ##STR1## and additionally contain an acid generator, a dissolution inhibitor, a basic compound, and an aromatic compound having a group of the formula .tbd.C--COOH.

    摘要翻译： 提供了当作为抗蚀剂材料中的基础树脂使用时，可以产生具有高灵敏度，高分辨率，高曝光宽容度和良好的工艺适应性的化学抗蚀剂材料，表现出优异的等离子体蚀刻性，并且具有高抗蚀剂图案的抗蚀剂图案 耐热性以及使用这种聚合物作为基础树脂的化学放大正型抗蚀剂材料。 这些化学放大正型抗蚀剂材料使用包含重均分子量为1,000至500,000并且在分子中具有一个或多个羟基和/或羧基的聚合化合物的基础树脂，部分或全部氢原子 羟基和/或羧基被下列通式的基团取代，另外含有酸产生剂，溶解抑制剂，碱性化合物和具有式3BOND C-COOH基团的芳族化合物。

    Polymers chemically amplified positive resist compositions, and patterning method
    10.
    发明授权
    Polymers chemically amplified positive resist compositions, and patterning method 失效
    聚合物化学放大正性抗蚀剂组合物和图案化方法

    公开(公告)号：US6027854A

    公开(公告)日：2000-02-22

    申请号：US31560

    申请日：1998-02-27

    申请人： Tsunehiro Nishi ,  Osamu Watanabe ,  Satoshi Watanabe ,  Shigehiro Nagura ,  Toshinobu Ishihara

    发明人： Tsunehiro Nishi ,  Osamu Watanabe ,  Satoshi Watanabe ,  Shigehiro Nagura ,  Toshinobu Ishihara

    IPC分类号： G03F7/004 ,  G03F7/039

    CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/106

    摘要： A polymer comprising recurring units of formula (1) is provided wherein some hydrogen atoms of phenolic hydroxyl groups and/or alcoholic hydroxyl groups and/or carboxyl groups are replaced by acid labile groups. The polymer is crosslinked with a crosslinking group having a C--O--C linkage resulting from reaction of some of the remaining alcoholic hydroxyl groups and/or carboxyl groups with an alkenyl ether compound or halogenated alkyl ether compound. The amount of the acid labile group and the crosslinking group combined is on the average from more than 0 mol % to 80 mol % of the entirety of the phenolic hydroxyl group, alcoholic hydroxyl group and carboxyl group. The polymer has Mw of 1,000-500,000. ##STR1## R.sup.1 is H or methyl, R.sup.2 is C.sub.1 -C.sub.8 alkyl, R.sup.3 is a divalent C.sub.1 -C.sub.18 hydrocarbon group which may have a hetero atom, R.sup.4 and R.sup.5 are H or monovalent C.sub.1 -C.sub.18 hydrocarbon groups which may have a hetero atom, x and y are integers satisfying x+y.ltoreq.5, x', y' and z' are integers satisfying x'+y'+z'.ltoreq.5, p, q and r are numbers satisfying 0.ltoreq.p.ltoreq.0.4, 0.ltoreq.q.ltoreq.0.4, 0.01.ltoreq.p+q.ltoreq.0.8, and p+q+r=1. A chemically amplified positive resist composition comprising the polymer as a base resin has high sensitivity, high resolution, a wide latitude of exposure, and process adaptability and forms resist patterns having plasma etching resistance and heat resistance.

    摘要翻译： 提供了包含式（1）的重复单元的聚合物，其中酚羟基和/或醇羟基和/或羧基的一些氢原子被酸不稳定基团取代。 聚合物与由一些残留的醇羟基和/或羧基与链烯基醚化合物或卤代烷基醚化合物的反应产生的具有C-O-C键的交联基团交联。 酸不稳定基团和交联基团的结合量平均为全部酚羟基，醇羟基和羧基的0摩尔％至80摩尔％以上。 聚合物的Mw为1,000-500,000。 R1是H或甲基，R2是C1-C8烷基，R3是可以具有杂原子的二价C1-C18烃基，R4和R5是H或可以具有杂原子的一价C1-C18烃基，x和 y是满足x + y <5的整数，x'，y'和z'是满足x'+ y'+ z'= 5的整数，p，q和r是满足0