利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

8 条记录 (耗时 0.031 秒)

    Semiconductor device
    5.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US07514782B2

    公开(公告)日：2009-04-07

    申请号：US11697094

    申请日：2007-04-05

    申请人： Seiki Hiramatsu ,  Kei Yamamoto ,  Atsuko Fujino ,  Hiromi Ito

    发明人： Seiki Hiramatsu ,  Kei Yamamoto ,  Atsuko Fujino ,  Hiromi Ito

    IPC分类号： H01L23/373

    CPC分类号： H01L23/3735 ,  H01L23/3677 ,  H01L23/3731 ,  H01L25/0655 ,  H01L2023/4081 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/09701 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2924/00012

    摘要： An objective is to provide a reliability-improved semiconductor device in which heat radiation characteristics are superior, and warpage of the semiconductor device occurring due to heat generation of a semiconductor chip or to varying of the usage environment is also suppressed. The semiconductor device is provided that includes a thermal-conductive sheet 3 formed on a base board 4, including thermal-conductive resin 6, a heat sink 2 provided on the base board 4 through the thermal-conductive sheet 3, a semiconductor chip 1 mounted on the heat sink 2, and a ceramic-embedded region 31 selectively provided in a region of the thermal-conductive sheet 3 under the semiconductor chip 1, including a ceramic component 5. In this semiconductor device, superior thermal conductivity can be ensured, and warpage and peeling in the semiconductor device occurring due to heat generation of the semiconductor chip or to varying of the usage environment can also be reduced.

    摘要翻译： 目的是提供一种可靠性改善的半导体器件，其中散热特性优异，并且还抑制了由于半导体芯片的发热而产生的半导体器件的翘曲或者使用环境的变化。 该半导体装置具备：包括导热性树脂6的基板4上形成的导热片3，通过导热片3设置在基板4上的散热片2，安装有半导体芯片1 并且在包含陶瓷部件5的半导体芯片1的下方的热传导片3的区域中选择性地设置陶瓷嵌入区域31.在该半导体装置中，可以确保优良的导热性， 也可以减少由于半导体芯片的发热而发生的半导体器件的翘曲和剥离或使用环境的变化。

    SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE 失效
    半导体器件

    公开(公告)号：US20070241450A1

    公开(公告)日：2007-10-18

    申请号：US11697094

    申请日：2007-04-05

    申请人： Seiki Hiramatsu ,  Kei Yamamoto ,  Atsuko Fujino ,  Hiromi Ito

    发明人： Seiki Hiramatsu ,  Kei Yamamoto ,  Atsuko Fujino ,  Hiromi Ito

    IPC分类号： H01L23/34

    CPC分类号： H01L23/3735 ,  H01L23/3677 ,  H01L23/3731 ,  H01L25/0655 ,  H01L2023/4081 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/09701 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2924/00012

    摘要： An objective is to provide a reliability-improved semiconductor device in which heat radiation characteristics are superior, and warpage of the semiconductor device occurring due to heat generation of a semiconductor chip or to varying of the usage environment is also suppressed. The semiconductor device is provided that includes a thermal-conductive sheet 3 formed on a base board 4, including thermal-conductive resin 6, a heat sink 2 provided on the base board 4 through the thermal-conductive sheet 3, a semiconductor chip 1 mounted on the heat sink 2, and a ceramic-embedded region 31 selectively provided in a region of the thermal-conductive sheet 3 under the semiconductor chip 1, including a ceramic component 5. In this semiconductor device, superior thermal conductivity can be ensured, and warpage and peeling in the semiconductor device occurring due to heat generation of the semiconductor chip or to varying of the usage environment can also be reduced.

    摘要翻译： 目的是提供一种可靠性改善的半导体器件，其中散热特性优异，并且还抑制了由于半导体芯片的发热而产生的半导体器件的翘曲或者使用环境的变化。 该半导体装置具备：包括导热性树脂6的基板4上形成的导热片3，通过导热片3设置在基板4上的散热片2，安装有半导体芯片1 以及选择性地设置在包含陶瓷部件5的半导体芯片1的导热性片3的区域内的陶瓷嵌入区域31。 在该半导体装置中，可以确保优异的导热性，并且还可以降低由于半导体芯片的发热而产生的半导体器件的翘曲和剥离或者使用环境的变化。

    Method of patterning a mask blank
    7.
    发明授权
    Method of patterning a mask blank 失效
    图案化掩模毛坯的方法

    公开(公告)号：US06984473B2

    公开(公告)日：2006-01-10

    申请号：US10217466

    申请日：2002-08-14

    申请人： Teruhiko Kumada ,  Atsuko Fujino ,  Kazuyuki Maetoko

    发明人： Teruhiko Kumada ,  Atsuko Fujino ,  Kazuyuki Maetoko

    IPC分类号： G03F1/00 ,  G03C5/00

    CPC分类号： G03F7/11

    摘要： A light-block film is formed on a substrate, and a chemically amplified resist film is then formed on the light-block film. The chemically amplified resist film includes a photosensitive acid generator which generates an acid upon irradiation with activating light or radiation, and mainly contains a first resin that becomes soluble in bases by action of the acid. Next, a protective film is formed on the chemically amplified resist film and thereby yields a mask blank. The protective film is formed by dissolving a second resin and the photosensitive acid generator in a solvent that does not substantially dissolve the chemically amplified resist film to prepare a solution, and applying the solution to the chemically amplified resist film.

    摘要翻译： 在基板上形成光阻挡膜，然后在光阻挡膜上形成化学放大抗蚀剂膜。 化学放大抗蚀剂膜包括在用活化光或辐射照射时产生酸的光敏酸产生剂，并且主要含有通过酸的作用变得可溶于碱的第一种树脂。 接着，在化学放大抗蚀剂膜上形成保护膜，由此形成掩模毛坯。 通过将第二树脂和感光酸产生剂溶解在基本上不溶解化学放大抗蚀剂膜以制备溶液的溶剂中并将溶液施加到化学放大抗蚀剂膜上而形成保护膜。

    Developing process, process for forming pattern and process for preparing semiconductor device using same
    8.
    发明授权
    Developing process, process for forming pattern and process for preparing semiconductor device using same 失效
    显影工艺，用于形成图案的工艺和使用其制备半导体器件的工艺

    公开(公告)号：US06511792B2

    公开(公告)日：2003-01-28

    申请号：US09793578

    申请日：2001-02-27

    申请人： Atsuko Fujino ,  Teruhiko Kumada ,  Atsushi Oshida ,  Koji Tange ,  Hitoshi Fukuma

    发明人： Atsuko Fujino ,  Teruhiko Kumada ,  Atsushi Oshida ,  Koji Tange ,  Hitoshi Fukuma

    IPC分类号： G03F742

    CPC分类号： G03F7/325

    摘要： By using a developer consisting essentially of one organic solvent selected from the group consisting of a ketone having 3 to 8 carbon atoms, a carboxylate ester having 3 to 8 carbon atoms, which may have an alkoxy group, and a dicarboxylate ester having 3 to 8 carbon atoms for developing a positive-type radiation resist containing a copolymer of an &agr;-methyl styrene compound and an &agr;-chloroacrylate ester compound as a base resin, there is provided a developing process and a process for forming a pattern (according to GHOST method in particular) which are used for preparing an excellent resist pattern profile, a process for preparing a photomask and a process for preparing a semiconductor device.

    摘要翻译： 通过使用主要由选自具有3至8个碳原子的一种有机溶剂，可以具有烷氧基的碳原子数为3至8的羧酸酯和具有3至8个碳原子的二羧酸酯组成的显影剂 用于形成包含α-甲基苯乙烯化合物和α-氯代丙烯酸酯化合物的共聚物作为基础树脂的正型辐射抗蚀剂的碳原子提供了显影方法和形成图案的方法（根据GHOST方法 特别是用于制备优异的抗蚀剂图形轮廓的方法，制备光掩模的方法和制备半导体器件的方法。