公开(公告)号：US06545420B1

公开(公告)日：2003-04-08

申请号：US08468573

申请日：1995-06-06

申请人： Kenneth S. Collins ,  Craig A. Roderick ,  John R. Trow ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Jay D. Pinson, II ,  Tetsuya Ishikawa ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima

发明人： Kenneth S. Collins ,  Craig A. Roderick ,  John R. Trow ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Jay D. Pinson, II ,  Tetsuya Ishikawa ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima

IPC分类号： H01J724

CPC分类号： H01J37/32871 ,  C23C16/509 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/3222 ,  H01J37/32293 ,  H01J37/32458 ,  H01J37/32522 ,  H01J37/3266 ,  H01J37/32688 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/6831

摘要： A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

摘要翻译： 圆顶等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应器穹顶内。 天线在室内产生高密度，低能量等离子体，用于蚀刻金属，电介质和半导体材料。 施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。 公开了各种磁和电压处理增强技术，连同蚀刻工艺，沉积工艺和组合蚀刻/沉积处理。 所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。

公开(公告)号：US06488807B1

公开(公告)日：2002-12-03

申请号：US09563825

申请日：2000-05-03

申请人： Kenneth S. Collins ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Craig A. Roderick ,  John R. Trow ,  Tetsuya Ishikawa ,  Jay D. Pinson, II ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima ,  Gerald Zheyao Yin

发明人： Kenneth S. Collins ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Craig A. Roderick ,  John R. Trow ,  Tetsuya Ishikawa ,  Jay D. Pinson, II ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima ,  Gerald Zheyao Yin

IPC分类号： H05H100

CPC分类号： H01J37/32871 ,  C23C16/507 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/6831

摘要： The invention is embodied in an RF plasma reactor for processing a semiconductor workpiece, including wall structures for containing a plasma therein, a workpiece support, a coil antenna capable of receiving a source RF power signal and being juxtaposed near the chamber, the workpiece support including a bias electrode capable of receiving a bias RF power signal, and first and second magnet structures adjacent the wall structure and in spaced relationship, with one pole of the first magnet structure facing an opposite pole of the second magnet structure, the magnet structures providing a plasma-confining static magnetic field adjacent said wall structure. The invention is also embodied in an RF plasma reactor for processing a semiconductor workpiece, including one or more wall structures for containing a plasma therein, a workpiece support, the workpiece support comprising a lower electrode, an upper electrode facing the lower electrode and spaced across a plasma generation region of said chamber from said lower electrode, and first and second magnet structures adjacent the wall structure and in spaced relationship with one pole of the first magnet structure facing an opposite pole of the second magnet structure, the magnet structures providing a plasma-confining static magnetic field adjacent said wall structure.

摘要翻译： 本发明体现在用于处理半导体工件的RF等离子体反应器中，其包括用于在其中容纳等离子体的壁结构，工件支撑件，能够接收源RF功率信号并在该室附近并列的线圈天线，所述工件支撑件包括 能够接收偏置RF功率信号的偏置电极，以及与壁结构相邻并且间隔的关系的第一和第二磁体结构，第一磁体结构的一个磁极面对第二磁体结构的相对极，磁体结构提供 等离子体约束的静磁场与所述壁结构相邻。 本发明还体现在用于处理半导体工件的RF等离子体反应器中，该半导体工件包括一个或多个用于在其中容纳等离子体的壁结构，工件支撑件，工件支撑件包括下电极，上电极面向下电极并间隔开 所述腔室的等离子体产生区域与所述下部电极相邻，第一和第二磁体结构邻近所述壁结构并且与所述第一磁体结构的与所述第二磁体结构的相反极的一极相隔开，所述磁体结构提供等离子体 围绕所述壁结构保持静止磁场。

公开(公告)号：US06518195B1

公开(公告)日：2003-02-11

申请号：US09504312

申请日：2000-02-15

申请人： Kenneth S. Collins ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Craig A. Roderick ,  John R. Trow ,  Tetsuya Ishikawa ,  Jay D. Pinson, II ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima ,  Gerald Zheyao Yin

发明人： Kenneth S. Collins ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Craig A. Roderick ,  John R. Trow ,  Tetsuya Ishikawa ,  Jay D. Pinson, II ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima ,  Gerald Zheyao Yin

IPC分类号： H01L213065

CPC分类号： H01J37/32871 ,  C23C16/507 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/6831

摘要： A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the 10 wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

摘要翻译： 圆顶等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应器穹顶内。 天线在室内产生高密度，低能量等离子体，用于蚀刻金属，电介质和半导体材料。 施加到10晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。 公开了各种磁和电压处理增强技术，以及蚀刻工艺沉积工艺和组合蚀刻/沉积处理。 所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。

公开(公告)号：US6068784A

公开(公告)日：2000-05-30

申请号：US41118

申请日：1993-04-01

申请人： Kenneth S. Collins ,  Craig A. Roderick ,  John R. Trow ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Jay D. Pinson, II ,  Tetsuya Ishikawa ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima

发明人： Kenneth S. Collins ,  Craig A. Roderick ,  John R. Trow ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Jay D. Pinson, II ,  Tetsuya Ishikawa ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima

IPC分类号： C23C16/507 ,  H01L21/311 ,  B44C1/22 ,  B28B1/02

CPC分类号： H01J37/32458 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32165 ,  H01J37/32522 ,  H01L21/31116 ,  H01F2029/143

摘要： A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

摘要翻译： 圆顶等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应器穹顶内。 天线在室内产生高密度，低能量等离子体，用于蚀刻金属，电介质和半导体材料。 施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。 公开了各种磁和电压处理增强技术，连同蚀刻工艺，沉积工艺和组合蚀刻/沉积处理。 所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。

公开(公告)号：US06251792B1

公开(公告)日：2001-06-26

申请号：US08948560

申请日：1997-10-10

申请人： Kenneth S. Collins ,  Craig A. Roderick ,  John R. Trow ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Jay D. Pinson, II ,  Tetsuya Ishikawa ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima ,  Gerald Zheyao Yin

发明人： Kenneth S. Collins ,  Craig A. Roderick ,  John R. Trow ,  Chan-Lon Yang ,  Jerry Yuen-Kui Wong ,  Jeffrey Marks ,  Peter R. Keswick ,  David W. Groechel ,  Jay D. Pinson, II ,  Tetsuya Ishikawa ,  Lawrence Chang-Lai Lei ,  Masato M. Toshima ,  Gerald Zheyao Yin

IPC分类号： H01L21302

CPC分类号： H01J37/32871 ,  C23C16/507 ,  C23C16/509 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/3222 ,  H01J37/32293 ,  H01J37/32458 ,  H01J37/32522 ,  H01J37/3266 ,  H01J37/32688 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/6831

摘要： A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

摘要翻译： 圆顶等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应器穹顶内。 天线在室内产生高密度，低能量等离子体，用于蚀刻金属，电介质和半导体材料。 施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。 公开了各种磁和电压处理增强技术，连同蚀刻工艺，沉积工艺和组合蚀刻/沉积处理。 所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。