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    Low-loss waveguide and method of making same
    2.
    发明授权
    Low-loss waveguide and method of making same 有权
    低损耗波导及其制造方法

    公开(公告)号：US06850683B2

    公开(公告)日：2005-02-01

    申请号：US09876392

    申请日：2001-06-07

    申请人： Kevin K. Lee ,  Desmond R. Lim ,  Kazumi Wada ,  Lionel C. Kimerling

    发明人： Kevin K. Lee ,  Desmond R. Lim ,  Kazumi Wada ,  Lionel C. Kimerling

    IPC分类号： G02B6/12 ,  G02B6/122 ,  G02B6/13 ,  G02B6/132 ,  G02B6/10

    CPC分类号： G02B6/122 ,  G02B6/13 ,  G02B6/132 ,  G02B2006/12176

    摘要： A method of reducing the scattering losses that involves smoothing of the core/cladding interface and/or change of waveguide geometry in high refractive index difference waveguides. As an example, the SOI-based Si/SiO2 waveguides are subjected to an oxidation reaction at high temperatures, after the waveguide patterning process. By oxidizing the rough silicon core surfaces after the patterning process, the core/cladding interfaces are smoothened, reducing the roughness scattering in waveguides.

    摘要翻译： 降低散射损耗的方法，其涉及在高折射率差分波导中平滑芯/包层界面和/或波导几何形状的变化。 作为示例，在波导图案化工艺之后，SOI基Si / SiO 2波导在高温下经受氧化反应。 通过在图案化处理之后氧化粗糙的硅芯表面，使芯/包层界面平滑化，减少波导中的粗糙度散射。

    Three dimensional high index optical waveguides bends and splitters
    3.
    发明授权
    Three dimensional high index optical waveguides bends and splitters 有权
    三维高折射率光波导弯曲和分离器

    公开(公告)号：US07352934B2

    公开(公告)日：2008-04-01

    申请号：US09996462

    申请日：2001-11-28

    申请人： Desmond R. Lim ,  Christina Manolatou ,  Paul Maki ,  Kevin K. Lee ,  Kazumi Wada ,  Hermann A. Haus ,  Lionel C. Kimerling

    发明人： Desmond R. Lim ,  Christina Manolatou ,  Paul Maki ,  Kevin K. Lee ,  Kazumi Wada ,  Hermann A. Haus ,  Lionel C. Kimerling

    IPC分类号： G02B6/26

    CPC分类号： G02B6/122 ,  G02B6/125 ,  G02B2006/12061 ,  G02B2006/12109 ,  G02B2006/12119 ,  G02B2006/12164

    摘要： An optical cavity structure for bending optical signals is provided. The optical cavity structure includes an input port for receiving input optical signals from a first waveguide. The optical cavity structure also includes an interconnecting structure that receives said input optical signals and interconnects said first waveguide to a second waveguide, the interconnecting structure further includes at least four straight edges that orthogonal and of a finite width. The optical cavity structure further includes an output port coupled to the interconnecting structure for providing the second waveguide with the input optical signals. Further, the optical cavity structure may be used to create three dimensional splitter devices and resonators.

    摘要翻译： 提供了用于弯曲光信号的光腔结构。 光腔结构包括用于从第一波导接收输入光信号的输入端口。 光腔结构还包括互连结构，其接收所述输入光信号并将所述第一波导互连到第二波导，所述互连结构还包括正交和有限宽度的至少四个直边。 光腔结构还包括耦合到互连结构的输出端口，用于向第二波导提供输入光信号。 此外，光腔结构可用于产生三维分离器装置和谐振器。

    Graded index waveguide
    8.
    发明授权
    Graded index waveguide 失效
    分级索引波导

    公开(公告)号：US06690871B2

    公开(公告)日：2004-02-10

    申请号：US09893263

    申请日：2001-06-27

    申请人： Kevin K. Lee ,  Desmond Lim ,  Kazumi Wada ,  Lionel C. Kimerling

    发明人： Kevin K. Lee ,  Desmond Lim ,  Kazumi Wada ,  Lionel C. Kimerling

    IPC分类号： G02B610

    CPC分类号： G02B6/10 ,  G02B6/105 ,  G02B6/122 ,  G02B6/13 ,  G02B6/132 ,  G02B2006/12176

    摘要： A planar waveguide that has a graded index layer at the core/cladding interface to reduce scattering losses due to core/cladding interface roughness. The refractive index at the core/cladding interface is changed from that of the core to that of cladding gradually by having a graded index layer. The graded index layer reduces the scattering of light traveling in the waveguide by reducing the effect of the roughness at the abrupt interface between the core and the cladding. Using a proper design, the graded index layer also minimizes the modal and polarization dispersion of the optical mode traveling in the waveguide.

    摘要翻译： 平面波导，其在芯/包层界面处具有渐变折射率层，以减少由于芯/包层界面粗糙度引起的散射损耗。 通过具有渐变折射率层，芯/包层界面处的折射率从芯的折射率逐渐改变为包层的折射率。 渐变折射率层通过减小在芯和包层之间的突然界面处的粗糙度的影响来减少在波导管中传播的光的散射。 使用适当的设计，渐变折射率层还使在波导中行进的光学模式的模态和偏振色散最小化。

    Mode transformer between low index difference waveguide and high index difference waveguide
    9.
    发明授权
    Mode transformer between low index difference waveguide and high index difference waveguide 失效
    低折射率差分波导与高折射率差分波导之间的模式变换器

    公开(公告)号：US06697551B2

    公开(公告)日：2004-02-24

    申请号：US09978310

    申请日：2001-06-26

    申请人： Kevin K. Lee ,  Kazumi Wada ,  Desmond Lim ,  Lionel C. Kimerling

    发明人： Kevin K. Lee ,  Kazumi Wada ,  Desmond Lim ,  Lionel C. Kimerling

    IPC分类号： G02B626

    CPC分类号： G02B6/1223 ,  B82Y20/00 ,  G02B6/1228 ,  G02B6/14 ,  G02B6/305

    摘要： A mode transformer that enables low-loss coupling between optical modes of two waveguides with different index difference. The mode size and the effective index are gradually changed between two waveguides to gradually transform the mode shape, size, and speed with minimum power loss. The mode transformer is useful for coupling the mode of an optical fiber waveguide with low index difference to the mode of a planar high index difference waveguide, and vice versa.

    摘要翻译： 一种模式变压器，可实现具有不同折射率差的两个波导的光模式之间的低损耗耦合。 模式尺寸和有效指数在两个波导之间逐渐变化，以最小功率损耗逐渐转换模式形状，尺寸和速度。 模式变压器可用于将具有低折射率差的光纤波导的模式耦合到平面高折射率差分波导的模式，反之亦然。

    SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER MANUFACTURING METHOD
    10.
    发明申请
    SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER MANUFACTURING METHOD 审中-公开
    半导体波导和半导体波形制造方法

    公开(公告)号：US20110006399A1

    公开(公告)日：2011-01-13

    申请号：US12810989

    申请日：2008-12-26

    申请人： Tomoyuki Takada ,  Sadanori Yamanaka ,  Masahiko Hata ,  Taketsugu Yamamoto ,  Kazumi Wada

    发明人： Tomoyuki Takada ,  Sadanori Yamanaka ,  Masahiko Hata ,  Taketsugu Yamamoto ,  Kazumi Wada

    IPC分类号： H01L29/12 ,  H01L21/20

    CPC分类号： H01L21/02516 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/267 ,  H01L29/7371

    摘要： A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising a single-crystal Si wafer; an insulating layer that has an open region and that is formed on the wafer; a Ge layer that is epitaxially grown on the wafer in the open region; and a GaAs layer that is epitaxially grown on the Ge layer, wherein the Ge layer is formed by (i) placing the wafer in a CVD reaction chamber that can create an ultra-high vacuum low-pressure state, (ii) performing a first epitaxial growth at a first temperature at which raw material gas can thermally decompose, (iii) performing a second epitaxial growth at a second temperature that is higher than the first temperature, (iv) performing a first annealing, at a third temperature that is loss than a melting point of Ge, on epitaxial layers formed by the first and second epitaxial growths, and (v) performing a second annealing at a fourth temperature that is lower than the third temperature. The Ge layer may he formed by repeating the first annealing and the second annealing a plurality of times, and the insulating layer may be a silicon oxide layer.

    摘要翻译： 实现了具有良好热释放特性的廉价Si晶片的高质量GaAs型晶体薄膜。 提供了包括单晶Si晶片的半导体晶片; 绝缘层，其具有开放区域并形成在所述晶片上; 在开放区域中在晶片上外延生长的Ge层; 以及在所述Ge层上外延生长的GaAs层，其中，所述Ge层通过以下方式形成：（i）将所述晶片放置在可产生超高真空低压状态的CVD反应室中，（ii） 在原料气体可以热分解的第一温度下外延生长，（iii）在高于第一温度的第二温度下进行第二外延生长，（iv）在损失的第三温度下进行第一退火 比在第一和第二外延生长形成的外延层上的熔点高的Ge，和（v）在低于第三温度的第四温度下进行第二次退火。 可以通过重复第一退火和第二退火多次形成Ge层，并且绝缘层可以是氧化硅层。