摘要:
To prevent malfunction or breakdown due to a surge voltage in a power converter for converting DC into AC or the like so as to supply electric power to a load, not only a control signal is transmitted via a level shift circuit which is provided correspondingly to each of switching semiconductor elements forming a main circuit and shifts a level of a reference potential at its output side so as to follow variations of a reference potential of the switching semiconductor element to the switching semiconductor element, but a DC control power source for supplying electric power to the level shift circuit and a negative pole of the switching semiconductor element are connected to each other through at least one of an inductor and a resistance.
摘要:
A power module is provided with an insulating substrate with a heat sink being bonded to one surface thereof and a circuit pattern being formed on the other surface. The circuit pattern is formed by an electrode layer. A switching semiconductor element and a free wheeling diode that is connected to a switching semiconductor element in anti-parallel therewith are placed on the circuit pattern. A controlling IC for controlling the switching semiconductor element is placed on the free wheeling diode. Thus, it is possible to make the entire power module compact, and it becomes possible to provide an inexpensive power module which can prevent the controlling IC from malfunctioning due to heat generated by the switching semiconductor element.
摘要:
In a circuit board having four-layered conductive pattern on which a control circuit is arranged, wiring sub-patterns 133a in the first layer are divided into four areas A1-A3 and A8, for respective sets of circuit parts having same power potentials. Respective sub-patterns belonging to the areas A1-A3 are partially or fully surrounded by wiring sub-patterns PEa1 PEa3 connected to negative power potentials of circuit parts belonging to respective areas, respectively. Similarly, at least part of a wiring patten Pa2 for transmitting an input signal to a semiconductor active element is surrounded by a wiring pattern PEa4. Penetration of electric noises to the wiring patterns for the control circuit, in particular to the wiring pattern for transmitting the input signal to semiconductor element, is decreased to thereby prevent misoperation due to electric noises.
摘要:
A life prediction wire 14 is connected to an emitter-wire bonding pad 2 of a semiconductor device 1. Wire deterioration is detected by checking whether or not an electric current flows from the life prediction wire 14 to the emitter-wire bonding pad 2. Thus, by directly checking a deterioration state of the semiconductor device, the life of the semiconductor device is predicted.
摘要:
A display panel for displaying an image, a drive circuit for driving the display panel and a rear plate for supporting the display panel are provided. The drive circuit includes a circuit board fixed on the rear plate, semiconductor devices surface-mounted on the circuit board to be connected to a plurality of electrodes formed on the display panel and radiator plates attached to the other surfaces of the semiconductor devices opposite to the surfaces mounted on the circuit board so as to be almost in parallel with the rear plate.
摘要:
A display panel for displaying an image, a drive circuit for driving the display panel and a rear plate for supporting the display panel are provided. The drive circuit includes a circuit board fixed on the rear plate, semiconductor devices surface-mounted on the circuit board to be connected to a plurality of electrodes formed on the display panel and radiator plates attached to the other surfaces of the semiconductor devices opposite to the surfaces mounted on the circuit board so as to be almost in parallel with the rear plate.
摘要:
A life prediction wire 14 is connected to an emitter-wire bonding pad 2 of a semiconductor device 1. Wire deterioration is detected by checking whether or not an electric current flows from the life prediction wire 14 to the emitter-wire bonding pad 2. Thus, by directly checking a deterioration state of the semiconductor device, the life of the semiconductor device is predicted.