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    In-situ defect monitor and control system for immersion medium in immersion lithography
    2.
    发明授权
    In-situ defect monitor and control system for immersion medium in immersion lithography 有权
    浸没式光刻浸渍介质的原位缺陷监测和控制系统

    公开(公告)号：US07224456B1

    公开(公告)日：2007-05-29

    申请号：US10858759

    申请日：2004-06-02

    申请人： Khoi Phan ,  Bhanwar Singh ,  Bharath Rangarajan ,  Ramkumar Subramanian

    发明人： Khoi Phan ,  Bhanwar Singh ,  Bharath Rangarajan ,  Ramkumar Subramanian

    IPC分类号： G01N15/02

    CPC分类号： G01N21/47 ,  G01N2015/0011 ,  G03F7/70341

    摘要： A system and method for detecting bubbles in a lithographic immersion medium and for controlling a lithographic process based at least in part on the detection of bubbles is provided. A bubble monitoring component emits an incident beam that passes through the immersion medium and is incident upon a substrate to produce a reflected and/or diffracted beam(s). The reflected and/or diffracted beam(s) is received by one or more optical detectors. The presence or absence of bubbles can be derived from information extracted by scatterometry from the reflected and/or diffracted beams. A process control component interacts with a positioning component and an optical exposure component to alter a lithographic process based at least in part on the results of the scatterometry.

    摘要翻译： 提供了一种用于在光刻浸渍介质中检测气泡并且至少部分地基于气泡检测来控制光刻工艺的系统和方法。 气泡监测部件发射穿过浸没介质并入射到基板上以产生反射和/或衍射光束的入射光束。 反射和/或衍射光束被一个或多个光学检测器接收。 可以通过从反射和/或衍射光束散射法提取的信息导出气泡的存在或不存在。 过程控制部件与定位部件和光学曝光部件相互作用，以至少部分地基于散射测量的结果来改变光刻工艺。

    Real time analytical monitor for soft defects on reticle during reticle inspection
    3.
    发明授权
    Real time analytical monitor for soft defects on reticle during reticle inspection 有权
    光罩检测时光罩上的软缺陷的实时分析监视器

    公开(公告)号：US07069155B1

    公开(公告)日：2006-06-27

    申请号：US10676455

    申请日：2003-10-01

    申请人： Khoi Phan ,  Bhanwar Singh ,  Bharath Rangarajan

    发明人： Khoi Phan ,  Bhanwar Singh ,  Bharath Rangarajan

    IPC分类号： G01B5/28 ,  G06K9/00 ,  H01L26/00

    CPC分类号： G06T7/0004 ,  G01N21/3563 ,  G01N21/95692 ,  G01N2021/3595 ,  G01N2021/95676 ,  G03F1/62 ,  G03F1/82 ,  G03F1/84 ,  G06T2207/30148 ,  H01J2237/304 ,  H01J2237/31744

    摘要： The present invention generally relates to semiconductor processing, and in particular to methods and systems for analyzing photolithographic reticle defects that include detecting soft defects on a reticle and analyzing the material composition of the defects for a particular chemical signature. Specifically, the present invention scans and images a soft defect via an optical inspection scan of a reticle, mills the defect using a Focused Ion Beam, and analyzes the defect for signatures using Electron Spectroscopy for Chemical Analysis and/or Fourier Transform Infrared Spectroscopy. The present invention thus provides for real-time analysis of the chemical composition of a soft defect on a reticle without the need for a defect identification navigation system. According to an aspect of the present invention, reticle defects can be monitored without removal of a pellicle, thus facilitating increased throughput and decreased cost in reticle repair and/or cleaning. According to another aspect of the invention, signatures occurring in trace amounts can be removed via employing a Focused Ion Beam in a non-reactive gas environment.

    摘要翻译： 本发明一般涉及半导体处理，特别涉及用于分析光刻掩模版缺陷的方法和系统，包括检测掩模版上的软缺陷并分析特定化学特征的缺陷的材料成分。 具体地说，本发明通过光掩膜的光学检查扫描来扫描和成像软缺陷，使用聚焦离子束研磨缺陷，并使用化学分析和/或傅立叶变换红外光谱法的电子光谱分析签名缺陷。 因此，本发明提供了对掩模版上的软缺陷的化学成分的实时分析，而不需要缺陷识别导航系统。 根据本发明的一个方面，可以在不去除防护薄膜的情况下监视掩模版缺陷，从而有助于增加掩模版修复和/或清洁中的生产量和降低成本。 根据本发明的另一方面，可以通过在非反应性气体环境中使用聚焦离子束来移除痕量发生的痕迹。

    Pattern recognition and metrology structure for an x-initiative layout design
    4.
    发明申请
    Pattern recognition and metrology structure for an x-initiative layout design 失效
    模式识别和计量结构，用于x-initiative布局设计

    公开(公告)号：US20050048741A1

    公开(公告)日：2005-03-03

    申请号：US10653309

    申请日：2003-09-02

    申请人： Khoi Phan ,  Bharath Rangarajan ,  Bhanwar Singh

    发明人： Khoi Phan ,  Bharath Rangarajan ,  Bhanwar Singh

    IPC分类号： G03F7/20 ,  G03F9/00 ,  H01L21/301

    CPC分类号： G03F7/70625 ,  G03F7/70633 ,  G03F9/7076 ,  Y10S438/975

    摘要： The present invention relates to inspection methods and systems utilized to provide a best means for inspection of a wafer. The methods and systems include wafer-to-reticle alignment, layer-to-layer alignment and wafer surface feature inspection. The wafer-to-reticle alignment is improved by the addition of diagonal lines to existing alignment marks to decrease the intersection size and corresponding area that a desired point can reside. Layer-to-layer alignment is improved in a similar manner by the addition of oblique and/or non-linear line segments to existing overlay targets. Also, providing for wafer surface inspection in a multitude of desired diagonal axes allows for more accurate feature measurement.

    摘要翻译： 本发明涉及用于提供用于检查晶片的最佳方法的检查方法和系统。 该方法和系统包括晶片到标线片对准，层间对准和晶片表面特征检查。 通过将对角线添加到现有的对准标记来减小交叉点大小和期望点可以驻留的对应区域来改善晶片到标线阵列对准。 通过向现有覆盖目标添加倾斜和/或非线性线段，以类似的方式改善了层间对齐。 此外，在多个所需的对角轴中提供晶片表面检查允许更精确的特征测量。

    Multi-layer overlay measurement and correction technique for IC manufacturing
    6.
    发明申请
    Multi-layer overlay measurement and correction technique for IC manufacturing 失效
    用于IC制造的多层覆盖测量和校正技术

    公开(公告)号：US20050193362A1

    公开(公告)日：2005-09-01

    申请号：US10790296

    申请日：2004-03-01

    申请人： Khoi Phan ,  Bharath Rangarajan ,  Bhanwar Singh

    发明人： Khoi Phan ,  Bharath Rangarajan ,  Bhanwar Singh

    IPC分类号： G01N21/956 ,  G03F7/20 ,  H01L21/66 ,  H01L23/544 ,  G06F17/50

    CPC分类号： G03F7/70633 ,  G01N21/95607 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A system facilitating measurement and correction of overlay between multiple layers of a wafer is disclosed. The system comprises an overlay target that represents overlay between three or more layers of a wafer and a measurement component that determines overlay error existent in the overlay target, thereby determining overlay error between the three or more layers of the wafer. A control component can be provided to correct overlay error between adjacent and non-adjacent layers, wherein the correction is based at least in part on measurements obtained by the measurement component.

    摘要翻译： 公开了一种便于测量和校正晶片多层之间覆盖层的系统。 该系统包括覆盖在三层或多层晶片之间的重叠目标，以及确定覆盖目标中存在的重叠误差的测量部件，从而确定晶片的三层或更多层之间的重叠误差。 可以提供控制部件来校正相邻层和非相邻层之间的覆盖误差，其中校正至少部分地基于由测量部件获得的测量。

    Multi-pitch and line calibration for mask and wafer CD-SEM system
    7.
    发明授权
    Multi-pitch and line calibration for mask and wafer CD-SEM system 失效
    掩模和晶圆CD-SEM系统的多间距和线校准

    公开(公告)号：US06570157B1

    公开(公告)日：2003-05-27

    申请号：US09591012

    申请日：2000-06-09

    申请人： Bhanwar Singh ,  Khoi Phan ,  Bharath Rangarajan

    发明人： Bhanwar Singh ,  Khoi Phan ,  Bharath Rangarajan

    IPC分类号： G01D1800

    CPC分类号： G03F7/70516 ,  G03F7/70625 ,  H01J37/28 ,  H01J2237/2826 ,  H01L21/682

    摘要： The present invention relates to a system and method for calibrating a scanning electron microscope (SEM). The method comprises using a reference having multiple features of different dimensions and spatial interrelationships, wherein more than one feature dimension or spacing is measured using the SEM prior to measuring a workpiece. The dimensional and/or spatial measurements from the reference sample are correlated to obtain one or more calibration factors for the SEM. The calibration factor or factors may then be correlated with a workpiece SEM measurement to obtain a workpiece critical dimension (CD). A system is provided for calibrating a SEM including a reference with various measurable features of different dimensions and/or spacing. The system comprises an SEM to measure one or more reference sample feature dimensions and/or spacings and a processor or other device to correlate the measurement data to obtain one or more calibration factors.

    摘要翻译： 本发明涉及一种用于校准扫描电子显微镜（SEM）的系统和方法。 该方法包括使用具有不同尺寸和空间相互关系的多个特征的参考，其中在测量工件之前使用SEM测量多于一个特征尺寸或间距。 来自参考样品的尺寸和/或空间测量值相关，以获得SEM的一个或多个校准因子。 然后可以将校准因子或因子与工件SEM测量值相关联，以获得工件临界尺寸（CD）。 提供了一种用于校准包括具有不同尺寸和/或间隔的各种可测量特征的参考的SEM的系统。 该系统包括用于测量一个或多个参考样本特征尺寸和/或间隔的SEM和用于使测量数据相关联以获得一个或多个校准因子的处理器或其它装置的SEM。

    Electric measurement of reference sample in a CD-SEM and method for calibration
    8.
    发明授权
    Electric measurement of reference sample in a CD-SEM and method for calibration 失效
    CD-SEM中参考样品的电测量和校准方法

    公开(公告)号：US06573498B1

    公开(公告)日：2003-06-03

    申请号：US09608096

    申请日：2000-06-30

    申请人： Bharath Rangarajan ,  Bhanwar Singh ,  Khoi Phan ,  Michael K. Templeton

    发明人： Bharath Rangarajan ,  Bhanwar Singh ,  Khoi Phan ,  Michael K. Templeton

    IPC分类号： G01N2300

    CPC分类号： G01N23/225 ,  H01J2237/2826

    摘要： The present invention relates to a system and method for calibrating a scanning electron microscope (SEM). The method comprises measuring an electrical characteristic of a calibration standard reference sample feature and correlating the electrical measurement with an SEM measurement thereof. The correlation of the electrical and SEM measurements provides a critical dimension (CD) for the reference sample feature which can then be used to correlate SEM measurements of workpiece features. The system provides a reference sample having a measurable feature electrically connected to a probe. The probe provides an electrical measurement of the reference sample feature. The system further comprises a scanning electron microscope (SEM) adapted to provide an optical measurement of the reference sample feature. A processor is provided to correlate the optical and electrical measurements of the reference sample feature, whereby a reference feature CD is obtained. The system may further correlate workpiece feature measurements with the reference feature CD in order to determine or obtain a workpiece feature CD.

    摘要翻译： 本发明涉及一种用于校准扫描电子显微镜（SEM）的系统和方法。 该方法包括测量校准标准参考样本特征的电特性并将电测量与其SEM测量相关联。 电和SEM测量的相关性为参考样品特征提供了临界尺寸（CD），然后可以将其用于关联工件特征的SEM测量。 该系统提供具有电连接到探针的可测量特征的参考样本。 探头提供参考样品特征的电气测量。 该系统还包括适于提供参考样品特征的光学测量的扫描电子显微镜（SEM）。 提供处理器以使参考样本特征的光学和电学测量相关，由此获得参考特征CD。 该系统可以进一步将工件特征测量与参考特征CD相关联，以便确定或获得工件特征CD。

    Calibration of CD-SEM by e-beam induced current measurement
    9.
    发明授权
    Calibration of CD-SEM by e-beam induced current measurement 失效
    通过电子束感应电流测量校正CD-SEM

    公开(公告)号：US06573497B1

    公开(公告)日：2003-06-03

    申请号：US09607628

    申请日：2000-06-30

    申请人： Bharath Rangarajan ,  Bhanwar Singh ,  Khoi Phan ,  Michael K. Templeton

    发明人： Bharath Rangarajan ,  Bhanwar Singh ,  Khoi Phan ,  Michael K. Templeton

    IPC分类号： G01R3126

    CPC分类号： H01J37/265 ,  H01J37/244 ,  H01J2237/24564 ,  H01J2237/2803 ,  H01J2237/2817 ,  H01J2237/2826

    摘要： The present invention relates to a system and method for calibrating a scanning electron microscope (SEM). The method comprises measuring an electrical characteristic of a calibration standard reference sample feature via a current induced by an electron beam (e-beam) and correlating the e-beam induced current measurement with an SEM measurement thereof. The correlation of the e-beam induced current and SEM measurements provides a critical dimension (CD) for the reference sample feature which can then be used to correlate SEM measurements of workpiece features. The system provides a reference sample having a measurable feature electrically connected to a probe. The probe provides an electrical measurement of the reference sample feature based on an e-beam induced current. The system further comprises a scanning electron microscope (SEM) adapted to provide an optical measurement of the reference sample feature and workpiece features. A processor is provided to correlate the optical and e-beam induced current measurements of the reference sample feature, whereby a reference feature CD is obtained. The system may further correlate workpiece feature measurements with the reference feature CD in order to determine or obtain a workpiece feature CD.

    摘要翻译： 本发明涉及一种用于校准扫描电子显微镜（SEM）的系统和方法。 该方法包括通过由电子束（电子束）感应的电流测量校准标准参考样本特征的电特性，并将电子束感应电流测量与其SEM测量相关联。 电子束感应电流和SEM测量的相关性为参考样品特征提供了临界尺寸（CD），然后可以将其用于关联工件特征的SEM测量。 该系统提供具有电连接到探针的可测量特征的参考样本。 探针基于电子束感应电流提供参考样品特征的电测量。 该系统还包括适于提供参考样品特征和工件特征的光学测量的扫描电子显微镜（SEM）。 提供处理器以使参考样本特征的光束和电子束感应电流测量值相关，从而获得参考特征CD。 该系统可以进一步将工件特征测量与参考特征CD相关联，以便确定或获得工件特征CD。

    Concurrent measurement of critical dimension and overlay in semiconductor manufacturing
    10.
    发明授权
    Concurrent measurement of critical dimension and overlay in semiconductor manufacturing 有权
    半导体制造中临界尺寸和覆盖层并行测量

    公开(公告)号：US07080330B1

    公开(公告)日：2006-07-18

    申请号：US10379738

    申请日：2003-03-05

    申请人： Bryan Choo ,  Bharath Rangarajan ,  Bhanwar Singh ,  Carmen Morales

    发明人： Bryan Choo ,  Bharath Rangarajan ,  Bhanwar Singh ,  Carmen Morales

    IPC分类号： G06F17/50

    CPC分类号： G03F7/70633 ,  G01N21/4788 ,  G01N21/956 ,  G03F7/70625

    摘要： A system and methodology are disclosed for monitoring and controlling a semiconductor fabrication process. One or more structures formed on a wafer matriculating through the process facilitate concurrent measurement of critical dimensions and overlay via scatterometry or a scanning electron microscope (SEM). The concurrent measurements mitigate fabrication inefficiencies, thereby reducing time and real estate required for the fabrication process. The measurements can be utilized to generate feedback and/or feed-forward data to selectively control one or more fabrication components and/or operating parameters associated therewith to achieve desired critical dimensions and to mitigate overlay error.

    摘要翻译： 公开了用于监测和控制半导体制造工艺的系统和方法。 通过该过程形成的晶片上形成的一个或多个结构便于同时测量临界尺寸并通过散射测量法或扫描电子显微镜（SEM）覆盖。 同时测量可减轻制造效率低下，从而减少制造过程所需的时间和空间。 可以利用这些测量来产生反馈和/或前馈数据，以选择性地控制一个或多个制造部件和/或与之相关联的操作参数以实现所需的临界尺寸并减轻重叠误差。