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公开(公告)号：US5396692A
公开(公告)日：1995-03-14
申请号：US783643
申请日：1991-10-28
申请人： Kirby H. Floyd , John J. Busuttil
发明人： Kirby H. Floyd , John J. Busuttil
CPC分类号： E05F1/123 , F16F1/22 , Y10T29/49844 , Y10T29/53635 , Y10T292/202
摘要： The invention provides an indirect linkage between a spring and a hatch supported by the spring. The torque or moment applied by the hatch is significantly curved. The indirect linkage which provides a first varying moment arm and a second varying moment arm and utilizes a varying ratio between the first moment arm and the second moment arm to provide an applied spring torque which matches the shape of the torque curve applied by the hatch.
摘要翻译： 本发明提供弹簧与由弹簧支撑的舱口之间的间接连接。 由舱口施加的扭矩或力矩显着弯曲。 提供第一变力矩臂和第二变力矩臂并且利用第一力矩臂和第二力矩臂之间的变化比率以提供与由舱口施加的扭矩曲线的形状匹配的施加的弹簧扭矩的间接联动。
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公开(公告)号：US20090120584A1
公开(公告)日：2009-05-14
申请号：US12059820
申请日：2008-03-31
申请人： Dmitry Lubomirsky , Toan Q. Tran , Lun Tsuei , Manuel A. Hernandez , Kirby H. Floyd , Ellie Y. Yieh
发明人： Dmitry Lubomirsky , Toan Q. Tran , Lun Tsuei , Manuel A. Hernandez , Kirby H. Floyd , Ellie Y. Yieh
IPC分类号： C23F1/08 , B05C13/00 , B05C15/00 , H01L21/677 , B05C21/00
CPC分类号： H01L21/6719 , H01L21/67017 , H01L21/68742 , H01L21/68792
摘要： A semiconductor processing system is described. The system includes a processing chamber having an interior capable of holding an internal chamber pressure below ambient atmospheric pressure. The system also includes a pumping system coupled to the chamber and adapted to remove material from the processing chamber. The system further includes a substrate support pedestal, where the substrate support pedestal is rigidly coupled to a substrate support shaft extending through a wall of the processing chamber. A bracket located outside the processing chamber is provided which is rigidly and sometimes rotatably coupled to the substrate support shaft. A motor coupled to the bracket can be actuated to vertically translate the substrate support pedestal, shaft and bracket from a first position to a second position closer to a processing plate. A piston mounted on an end of the bracket provides a counter-balancing force to a tilting force, where the tilting force is generated by a change in the internal chamber pressure and causes a deflection in the position of the bracket and the substrate support. The counter-balancing force reduces the deflection of the bracket and the substrate support.
摘要翻译： 描述半导体处理系统。 该系统包括具有能够将内部室压力保持在环境大气压力以下的内部的处理室。 该系统还包括耦合到腔室并适于从处理室移除材料的泵送系统。 该系统还包括基板支撑基座，其中基板支撑基座刚性地联接到延伸穿过处理室的壁的基板支撑轴。 提供位于处理室外部的支架，其刚性且有时可旋转地联接到基板支撑轴。 耦合到支架的马达可以被致动以将基板支撑基座，轴和托架从第一位置垂直平移到靠近处理板的第二位置。 安装在支架的端部上的活塞提供与倾斜力的反平衡力，其中倾斜力由内部室压力的变化产生，并且引起支架和基板支撑件的位置的偏转。 反平衡力减小了支架和基板支架的挠曲。
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公开(公告)号：US09285168B2
公开(公告)日：2016-03-15
申请号：US13247687
申请日：2011-09-28
CPC分类号： F26B25/004 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02337 , H01L21/3105 , H01L21/67178 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67207
摘要： A substrate processing system that has a plurality of deposition chambers, and one or more robotic arms for moving a substrate between one or more of a deposition chamber, load lock holding area, and a curing and treatment module. The substrate curing and treatment module is attached to the load-lock substrate holding area, and may include: The curing chamber for curing a dielectric layer in an atmosphere comprising ozone, and a treatment chamber for treating the cured dielectric layer in an atmosphere comprising water vapor. The chambers may be vertically aligned, have one or more access doors, and may include a heating system to adjust the curing and/or heating chambers between two or more temperatures respectively.
摘要翻译： 具有多个沉积室的基板处理系统和用于在沉积室，加载锁定保持区域和固化和处理模块中的一个或多个之间移动基板的一个或多个机器人臂。 衬底固化和处理模块附接到负载锁定衬底保持区域，并且可以包括：用于在包含臭氧的气氛中固化电介质层的固化室，以及用于在包含水的气氛中处理固化的电介质层的处理室 汽。 腔室可以垂直对准，具有一个或多个通道门，并且可以包括加热系统，以分别在两个或更多个温度之间调节固化和/或加热室。
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公开(公告)号：US20120145079A1
公开(公告)日：2012-06-14
申请号：US13161371
申请日：2011-06-15
IPC分类号： C23C16/458
CPC分类号： H01L21/67178 , H01L21/67109 , H01L21/6719 , H01L21/67757
摘要： A substrate processing chamber for processing a plurality of wafers in batch mode. In one embodiment the chamber includes a vertically aligned housing having first and second processing areas separated by an internal divider, the first processing area positioned directly over the second processing area; a multi-zone heater operatively coupled to the housing to heat the first and second processing areas independent of each other; a wafer transport adapted to hold a plurality of wafers within the processing chamber and move vertically between the first and second processing areas; a gas distribution system adapted to introduce ozone into the second area and steam into the first processing area; and a gas exhaust system configured to exhaust gases introduced into the first and second processing areas.
摘要翻译： 一种用于以批处理模式处理多个晶片的衬底处理室。 在一个实施例中，所述腔室包括具有由内部分隔器隔开的第一和第二处理区域的垂直排列的壳体，所述第一处理区域直接位于所述第二处理区域上方; 多区加热器，其可操作地耦合到所述壳体以彼此独立地加热所述第一处理区域和所述第二处理区域; 晶片传送器，其适于将多个晶片保持在处理室内并在第一和第二处理区域之间垂直移动; 气体分配系统，其适于将臭氧引入所述第二区域并将蒸汽引入到所述第一处理区域中; 以及排气系统，其被配置为排出引入到第一和第二处理区域中的气体。
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公开(公告)号：US20120103970A1
公开(公告)日：2012-05-03
申请号：US13099220
申请日：2011-05-02
申请人： Dmitry Lubomirsky , Sudhir R. Gondhalekar , Shankar Venkataraman , Kirby H. Floyd , Yizhen Zhang
发明人： Dmitry Lubomirsky , Sudhir R. Gondhalekar , Shankar Venkataraman , Kirby H. Floyd , Yizhen Zhang
CPC分类号： H01L21/67103 , H01L21/68792
摘要： A substrate heater comprising a ceramic substrate support having a substantially flat upper surface for supporting a substrate during substrate processing; a resistive heater embedded within the substrate support; a heater shaft coupled to a back surface of the substrate support, the heater having an interior cavity that extends along its longitudinal axis and ends at a bottom central surface of the substrate support; and a supplemental heater, separate from the ceramic substrate support, positioned within the interior cavity of the heater shaft in thermal contact with a portion of the bottom central surface of the substrate support such that the supplemental heater can alter the temperature of a central area of the upper surface of the substrate support.
摘要翻译： 一种衬底加热器，包括陶瓷衬底支撑件，其具有在衬底处理期间用于支撑衬底的基本平坦的上表面; 嵌入在所述衬底支架内的电阻加热器; 加热器轴，其联接到所述基板支撑件的后表面，所述加热器具有沿着其纵向轴线延伸并且在所述基板支撑件的底部中心表面处终止的内部空腔; 以及与陶瓷基板支撑件分开的补充加热器，其位于加热器轴的内部空腔内，与基板支撑件的底部中心表面的一部分热接触，使得补充加热器可以改变加热器轴的中心区域的温度 衬底的上表面支撑。
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公开(公告)号：US20120079982A1
公开(公告)日：2012-04-05
申请号：US13247687
申请日：2011-09-28
CPC分类号： F26B25/004 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02337 , H01L21/3105 , H01L21/67178 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67207
摘要： A substrate processing system that has a plurality of deposition chambers, and one or more robotic arms for moving a substrate between one or more of a deposition chamber, load lock holding area, and a curing and treatment module. The substrate curing and treatment module is attached to the load-lock substrate holding area, and may include: The curing chamber for curing a dielectric layer in an atmosphere comprising ozone, and a treatment chamber for treating the cured dielectric layer in an atmosphere comprising water vapor. The chambers may be vertically aligned, have one or more access doors, and may include a heating system to adjust the curing and/or heating chambers between two or more temperatures respectively.
摘要翻译： 具有多个沉积室的基板处理系统和用于在沉积室，加载锁定保持区域和固化和处理模块中的一个或多个之间移动基板的一个或多个机器人臂。 衬底固化和处理模块附接到负载锁定衬底保持区域，并且可以包括：用于在包含臭氧的气氛中固化电介质层的固化室，以及用于在包含水的气氛中处理固化的电介质层的处理室 汽。 腔室可以垂直对准，具有一个或多个通道门，并且可以包括加热系统，以分别在两个或更多个温度之间调节固化和/或加热室。
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公开(公告)号：US08524004B2
公开(公告)日：2013-09-03
申请号：US13161371
申请日：2011-06-15
IPC分类号： C23C16/455
CPC分类号： H01L21/67178 , H01L21/67109 , H01L21/6719 , H01L21/67757
摘要： A substrate processing chamber for processing a plurality of wafers in batch mode. In one embodiment the chamber includes a vertically aligned housing having first and second processing areas separated by an internal divider, the first processing area positioned directly over the second processing area; a multi-zone heater operatively coupled to the housing to heat the first and second processing areas independent of each other; a wafer transport adapted to hold a plurality of wafers within the processing chamber and move vertically between the first and second processing areas; a gas distribution system adapted to introduce ozone into the second area and steam into the first processing area; and a gas exhaust system configured to exhaust gases introduced into the first and second processing areas.
摘要翻译： 一种用于以批处理模式处理多个晶片的衬底处理室。 在一个实施例中，所述腔室包括具有由内部分隔器隔开的第一和第二处理区域的垂直排列的壳体，所述第一处理区域直接位于所述第二处理区域上方; 多区加热器，其可操作地耦合到所述壳体以彼此独立地加热所述第一处理区域和所述第二处理区域; 晶片传送器，其适于将多个晶片保持在处理室内并在第一和第二处理区域之间垂直移动; 气体分配系统，其适于将臭氧引入所述第二区域并将蒸汽引入到所述第一处理区域中; 以及排气系统，其被配置为排出引入到第一和第二处理区域中的气体。
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8.发明申请公开(公告)号：US20090120368A1
公开(公告)日：2009-05-14
申请号：US12111817
申请日：2008-04-29
申请人： Dmitry Lubomirsky , Kirby H. Floyd
发明人： Dmitry Lubomirsky , Kirby H. Floyd
IPC分类号： C23C16/00
CPC分类号： H01L21/68785 , C23C16/4409 , C23C16/45574 , C23C16/4584 , C23C16/463 , H01L21/68792
摘要： Substrate processing systems are described. The systems may include a processing chamber, and a substrate support assembly at least partially disposed within the chamber. The substrate support assembly is rotatable by a motor yet still allows electricity, cooling fluids, gases and vacuum to be transferred from a non-rotating source outside the processing chamber to the rotatable substrate support assembly inside the processing chamber. Cooling fluids and electrical connections can be used to raise or lower the temperature of a substrate supported by the substrate support assembly. Electrical connections can also be used to electrostatically chuck the wafer to the support assembly. A rotary seal or seals (which may be low friction O-rings) are used to maintain a process pressure while still allowing substrate assembly rotation. Vacuum pumps can be connected to ports which are used to chuck the wafer. The pumps can also be used to differentially pump the region between a pair of rotary seals when two or more rotary seals are present.
摘要翻译： 描述基板处理系统。 系统可以包括处理室和至少部分地设置在室内的衬底支撑组件。 基板支撑组件可通过电动机旋转，但仍然允许电，冷却流体，气体和真空从处理室外的非旋转源转移到处理室内部的可旋转基板支撑组件。 可以使用冷却流体和电连接来提高或降低由基板支撑组件支撑的基板的温度。 也可以使用电气连接来将晶片静电吸附到支撑组件上。 使用旋转密封件或密封件（其可以是低摩擦O形环）来保持工艺压力，同时仍允许基板组件旋转。 真空泵可以连接到用于夹紧晶片的端口。 当存在两个或多个旋转密封件时，泵还可以用于差异地泵送一对旋转密封件之间的区域。
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