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    HEATER WITH INDEPENDENT CENTER ZONE CONTROL
    1.
    发明申请
    HEATER WITH INDEPENDENT CENTER ZONE CONTROL 审中-公开
    加热器具有独立的中心区域控制

    公开(公告)号：US20120103970A1

    公开(公告)日：2012-05-03

    申请号：US13099220

    申请日：2011-05-02

    申请人： Dmitry Lubomirsky ,  Sudhir R. Gondhalekar ,  Shankar Venkataraman ,  Kirby H. Floyd ,  Yizhen Zhang

    发明人： Dmitry Lubomirsky ,  Sudhir R. Gondhalekar ,  Shankar Venkataraman ,  Kirby H. Floyd ,  Yizhen Zhang

    IPC分类号： H05B3/74 ,  H05B3/02

    CPC分类号： H01L21/67103 ,  H01L21/68792

    摘要： A substrate heater comprising a ceramic substrate support having a substantially flat upper surface for supporting a substrate during substrate processing; a resistive heater embedded within the substrate support; a heater shaft coupled to a back surface of the substrate support, the heater having an interior cavity that extends along its longitudinal axis and ends at a bottom central surface of the substrate support; and a supplemental heater, separate from the ceramic substrate support, positioned within the interior cavity of the heater shaft in thermal contact with a portion of the bottom central surface of the substrate support such that the supplemental heater can alter the temperature of a central area of the upper surface of the substrate support.

    摘要翻译： 一种衬底加热器，包括陶瓷衬底支撑件，其具有在衬底处理期间用于支撑衬底的基本平坦的上表面; 嵌入在所述衬底支架内的电阻加热器; 加热器轴，其联接到所述基板支撑件的后表面，所述加热器具有沿着其纵向轴线延伸并且在所述基板支撑件的底部中心表面处终止的内部空腔; 以及与陶瓷基板支撑件分开的补充加热器，其位于加热器轴的内部空腔内，与基板支撑件的底部中心表面的一部分热接触，使得补充加热器可以改变加热器轴的中心区域的温度 衬底的上表面支撑。

    Loadlock batch ozone cure
    2.
    发明授权
    Loadlock batch ozone cure 有权
    负压批次臭氧固化

    公开(公告)号：US08524004B2

    公开(公告)日：2013-09-03

    申请号：US13161371

    申请日：2011-06-15

    申请人： Dmitry Lubomirsky ,  Jay D. Pinson, II ,  Kirby H. Floyd ,  Adib Khan ,  Shankar Venkataraman

    发明人： Dmitry Lubomirsky ,  Jay D. Pinson, II ,  Kirby H. Floyd ,  Adib Khan ,  Shankar Venkataraman

    IPC分类号： C23C16/455

    CPC分类号： H01L21/67178 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/67757

    摘要： A substrate processing chamber for processing a plurality of wafers in batch mode. In one embodiment the chamber includes a vertically aligned housing having first and second processing areas separated by an internal divider, the first processing area positioned directly over the second processing area; a multi-zone heater operatively coupled to the housing to heat the first and second processing areas independent of each other; a wafer transport adapted to hold a plurality of wafers within the processing chamber and move vertically between the first and second processing areas; a gas distribution system adapted to introduce ozone into the second area and steam into the first processing area; and a gas exhaust system configured to exhaust gases introduced into the first and second processing areas.

    摘要翻译： 一种用于以批处理模式处理多个晶片的衬底处理室。 在一个实施例中，所述腔室包括具有由内部分隔器隔开的第一和第二处理区域的垂直排列的壳体，所述第一处理区域直接位于所述第二处理区域上方; 多区加热器，其可操作地耦合到所述壳体以彼此独立地加热所述第一处理区域和所述第二处理区域; 晶片传送器，其适于将多个晶片保持在处理室内并在第一和第二处理区域之间垂直移动; 气体分配系统，其适于将臭氧引入所述第二区域并将蒸汽引入到所述第一处理区域中; 以及排气系统，其被配置为排出引入到第一和第二处理区域中的气体。

    LOADLOCK BATCH OZONE CURE
    4.
    发明申请
    LOADLOCK BATCH OZONE CURE 有权

    公开(公告)号：US20120145079A1

    公开(公告)日：2012-06-14

    申请号：US13161371

    申请日：2011-06-15

    申请人： Dmitry Lubomirsky ,  Jay D. Pinson, II ,  Kirby H. Floyd ,  Adib Khan ,  Shankar Venkataraman

    发明人： Dmitry Lubomirsky ,  Jay D. Pinson, II ,  Kirby H. Floyd ,  Adib Khan ,  Shankar Venkataraman

    IPC分类号： C23C16/458

    CPC分类号： H01L21/67178 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/67757

    摘要： A substrate processing chamber for processing a plurality of wafers in batch mode. In one embodiment the chamber includes a vertically aligned housing having first and second processing areas separated by an internal divider, the first processing area positioned directly over the second processing area; a multi-zone heater operatively coupled to the housing to heat the first and second processing areas independent of each other; a wafer transport adapted to hold a plurality of wafers within the processing chamber and move vertically between the first and second processing areas; a gas distribution system adapted to introduce ozone into the second area and steam into the first processing area; and a gas exhaust system configured to exhaust gases introduced into the first and second processing areas.

    摘要翻译： 一种用于以批处理模式处理多个晶片的衬底处理室。 在一个实施例中，所述腔室包括具有由内部分隔器隔开的第一和第二处理区域的垂直排列的壳体，所述第一处理区域直接位于所述第二处理区域上方; 多区加热器，其可操作地耦合到所述壳体以彼此独立地加热所述第一处理区域和所述第二处理区域; 晶片传送器，其适于将多个晶片保持在处理室内并在第一和第二处理区域之间垂直移动; 气体分配系统，其适于将臭氧引入所述第二区域并将蒸汽引入到所述第一处理区域中; 以及排气系统，其被配置为排出引入到第一和第二处理区域中的气体。

    MODULE FOR OZONE CURE AND POST-CURE MOISTURE TREATMENT
    5.
    发明申请
    MODULE FOR OZONE CURE AND POST-CURE MOISTURE TREATMENT 有权
    用于臭氧固化和后处理水分处理的模块

    公开(公告)号：US20120079982A1

    公开(公告)日：2012-04-05

    申请号：US13247687

    申请日：2011-09-28

    申请人： Dmitry Lubomirsky ,  Jay D. Pinson, II ,  Kirby H. Floyd ,  Adib Khan ,  Shankar Venkataraman

    发明人： Dmitry Lubomirsky ,  Jay D. Pinson, II ,  Kirby H. Floyd ,  Adib Khan ,  Shankar Venkataraman

    IPC分类号： B05C13/02 ,  F26B25/08 ,  F26B25/06

    CPC分类号： F26B25/004 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02337 ,  H01L21/3105 ,  H01L21/67178 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207

    摘要： A substrate processing system that has a plurality of deposition chambers, and one or more robotic arms for moving a substrate between one or more of a deposition chamber, load lock holding area, and a curing and treatment module. The substrate curing and treatment module is attached to the load-lock substrate holding area, and may include: The curing chamber for curing a dielectric layer in an atmosphere comprising ozone, and a treatment chamber for treating the cured dielectric layer in an atmosphere comprising water vapor. The chambers may be vertically aligned, have one or more access doors, and may include a heating system to adjust the curing and/or heating chambers between two or more temperatures respectively.

    摘要翻译： 具有多个沉积室的基板处理系统和用于在沉积室，加载锁定保持区域和固化和处理模块中的一个或多个之间移动基板的一个或多个机器人臂。 衬底固化和处理模块附接到负载锁定衬底保持区域，并且可以包括：用于在包含臭氧的气氛中固化电介质层的固化室，以及用于在包含水的气氛中处理固化的电介质层的处理室 汽。 腔室可以垂直对准，具有一个或多个通道门，并且可以包括加热系统，以分别在两个或更多个温度之间调节固化和/或加热室。

    FLOW CONTROL FEATURES OF CVD CHAMBERS
    10.
    发明申请
    FLOW CONTROL FEATURES OF CVD CHAMBERS 有权
    CVD气泡流量控制特征

    公开(公告)号：US20110011338A1

    公开(公告)日：2011-01-20

    申请号：US12836726

    申请日：2010-07-15

    申请人： Kien N. Chuc ,  Qiwei Liang ,  Hanh D. Nguyen ,  Xinglong Chen ,  Matthew Miller ,  Soonam Park ,  Toan Q. Tran ,  Adib Khan ,  Jang-Gyoo Yang ,  Dmitry Lubomirsky ,  Shankar Venkataraman

    发明人： Kien N. Chuc ,  Qiwei Liang ,  Hanh D. Nguyen ,  Xinglong Chen ,  Matthew Miller ,  Soonam Park ,  Toan Q. Tran ,  Adib Khan ,  Jang-Gyoo Yang ,  Dmitry Lubomirsky ,  Shankar Venkataraman

    IPC分类号： C23C16/00

    CPC分类号： C23C16/45565 ,  C23C16/452 ,  C23C16/45574 ,  H01J37/3244 ,  H01J37/32449 ,  Y10T137/85938

    摘要： Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

    摘要翻译： 提供了用于气体分配组件的装置和方法。 一方面，提供了一种气体分配组件，包括环形体，该环形体包括具有内环形壁，外壁，上表面和底表面的环形环，形成在上表面中的上凹部，以及形成 位于所述内部环形壁中的位于所述上部凹部中的上板，包括具有穿过其形成的多个第一孔的盘状体和位于所述座上的底板，所述底板包括具有多个第二孔的盘状体 通过其形成的孔与第一孔对准，以及形成在第二孔之间并穿过底板的多个第三孔，底板密封地联接到上板，以将多个第一和第二孔与多个 第三孔。