公开(公告)号：US5140397A

公开(公告)日：1992-08-18

申请号：US309688

申请日：1989-02-10

申请人： Koichi Haga ,  Kenji Yamamoto ,  Masafumi Kumano ,  Akishige Murakami

发明人： Koichi Haga ,  Kenji Yamamoto ,  Masafumi Kumano ,  Akishige Murakami

IPC分类号： H01L31/0376 ,  H01L31/0392 ,  H01L31/09 ,  H01L31/20

CPC分类号： H01L31/204 ,  H01L31/0376 ,  H01L31/03921 ,  H01L31/095 ,  H01L31/20 ,  Y02E10/50 ,  Y02P70/521

摘要： A photoelectric device suitable for use as an image sensor includes a body of amorphous silicon and a pair of electrodes sandwiching the body. The amorphous silicon body includes at least one kind of oxygen, carbon, and nitrogen atoms and it has an ability to exhibit a predetermined level of photoconductivity for an optical bandgap of 2.0 eV or more. The amorphous silicon body may have either a mono-layered structure or a multi-layered structure. In the latter case, the body may have a p-i-n structure.

摘要翻译： 适合用作图像传感器的光电装置包括非晶硅体和夹在主体上的一对电极。 非晶硅体包括至少一种氧，碳和氮原子，并且其具有对于2.0eV或更高的光学带隙具有预定水平的光电导率的能力。 非晶硅体可以具有单层结构或多层结构。 在后一种情况下，身体可以具有p-i-n结构。

公开(公告)号：US4792510A

公开(公告)日：1988-12-20

申请号：US142286

申请日：1987-12-30

申请人： Masafumi Kumano ,  Yasuyuki Shindoh ,  Yutaka Sano ,  Koichi Haga ,  Akihiro Fuse

发明人： Masafumi Kumano ,  Yasuyuki Shindoh ,  Yutaka Sano ,  Koichi Haga ,  Akihiro Fuse

IPC分类号： G03G5/082 ,  G03G5/14

CPC分类号： G03G5/144 ,  G03G5/08221

摘要： This invention relates to a photosensitive material for electrophotography having, on a substrate, an amorphous silicon layer comprising silicon atom as the matrix and containing at least one of hydrogen atom, halogen atom and heavy hydrogen atom, characterized by provided with a porous aluminum oxide layer between said substrate and said amorphous silicon layer.This invention further relates to a photosensitive material for electrophotography having, on a substrate, an amorphous silicon layer comprising silicon atom as the matrix and containing at least one of hydrogen atom, halogen atom and heavy hydrogen atom, characterized by provided with a porous aluminum oxide layer having the surface treated with a silicide material between said substrate and said amorphous silicon layer.

摘要翻译： 本发明涉及一种用于电子照相的感光材料，其在基底上具有包含硅原子作为基质并含有氢原子，卤素原子和重氢原子中的至少一个的非晶硅层，其特征在于具有多孔氧化铝层 在所述衬底和所述非晶硅层之间。 本发明还涉及一种用于电子照相的感光材料，其在基底上具有包含硅原子作为基质并含有氢原子，卤素原子和重氢原子中的至少一个的非晶硅层，其特征在于具有多孔氧化铝 层，其具有在所述衬底和所述非晶硅层之间用硅化物材料处理的表面。

公开(公告)号：US5155567A

公开(公告)日：1992-10-13

申请号：US635210

申请日：1990-12-28

申请人： Koichi Haga ,  Masafumi Kumano

发明人： Koichi Haga ,  Masafumi Kumano

IPC分类号： C23C16/24 ,  C23C16/30 ,  G03G5/082 ,  H01L31/0376 ,  H01L31/09 ,  H01L31/113 ,  H01L31/20

CPC分类号： H01L31/03762 ,  C23C16/24 ,  C23C16/30 ,  G03G5/08214 ,  H01L31/095 ,  H01L31/1136 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoconductive material comprises a photocarrier generating zone using a wide-band gap material and a photocarrier moving zone using an amorphous silicon material. A photocarrier generating zone including a silicon atom as a principal atom comprises an amorphous silicon which contains at least one kind of atom selected from a group including oxygen, nitrogen and carbon and also contains an atom which terminates a dangling bond of a silicon. This photoconductive material can be used for various devices because of its wide-band gap and high photosensitivity.

摘要翻译： 感光材料包括使用宽带隙材料的光载流子产生区和使用非晶硅材料的光载流子移动区。 包括硅原子作为主要原子的光载体产生区包括含有至少一种选自氧，氮和碳的基团的原子的非晶硅，并且还含有终止硅的悬挂键的原子。 由于其宽带隙和高光敏性，该光电导材料可用于各种器件。

公开(公告)号：US5283207A

公开(公告)日：1994-02-01

申请号：US896587

申请日：1992-06-10

申请人： Koichi Haga ,  Masafumi Kumano

发明人： Koichi Haga ,  Masafumi Kumano

IPC分类号： G03G5/08 ,  C23C16/24 ,  C23C16/30 ,  G03G5/082 ,  H01L31/0376 ,  H01L31/09 ,  H01L31/113 ,  H01L31/20 ,  H01L31/18

CPC分类号： C23C16/24 ,  C23C16/30 ,  G03G5/08214 ,  H01L31/03762 ,  H01L31/095 ,  H01L31/1136 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoconductive material comprises a photocarrier generating zone using a wide-band gap material and a photocarrier moving zone using an amorphous silicon material. A photocarrier generating zone including a silicon atom as a principal atom comprises an amorphous silicon which contains at least one kind of atom selected from a group including oxygen, nitrogen and carbon and also contains an atom which terminates a dangling bond of a silicon. This photoconductive material can be used for various devices because of its wide-band gap and high photosensitivity.

摘要翻译： 感光材料包括使用宽带隙材料的光载流子产生区和使用非晶硅材料的光载流子移动区。 包括硅原子作为主要原子的光载体产生区包括含有至少一种选自氧，氮和碳的基团的原子的非晶硅，并且还含有终止硅的悬挂键的原子。 由于其宽带隙和高光敏性，该光电导材料可用于各种器件。

公开(公告)号：US4734346A

公开(公告)日：1988-03-29

申请号：US860714

申请日：1986-05-07

申请人： Masafumi Kumano ,  Koichi Haga ,  Yasuyuki Shindoh

发明人： Masafumi Kumano ,  Koichi Haga ,  Yasuyuki Shindoh

IPC分类号： G03G5/08 ,  G03G5/082

CPC分类号： G03G5/08235 ,  G03G5/082

摘要： The present invention is concerned with a photosensitive material for electrophotography that comprises forming a photosensitive layer on a substrate, wherein said photosensitive layer is constructed by laminating a charge transfer layer, a first charge carrier generating layer and a second charge carrier generating layer in order from said substrate side to free surface, and said charge transfer layer and second charge carrier generating layer each has a band gap wider than that of said first charge carrier generating layer.

摘要翻译： 本发明涉及用于电子照相的感光材料，其包括在基底上形成感光层，其中所述感光层通过层叠电荷转移层，第一电荷载体产生层和第二电荷载流子产生层而构成， 所述衬底侧为自由表面，并且所述电荷转移层和第二电荷载流子产生层各自具有比所述第一电荷载流子生成层宽的带隙。

公开(公告)号：US20090120354A1

公开(公告)日：2009-05-14

申请号：US12353608

申请日：2009-01-14

申请人： Seiji Sarayama ,  Hisanori Yamane ,  Masahiko Shimada ,  Masafumi Kumano ,  Hirokazu Iwata ,  Takashi Araki

发明人： Seiji Sarayama ,  Hisanori Yamane ,  Masahiko Shimada ,  Masafumi Kumano ,  Hirokazu Iwata ,  Takashi Araki

IPC分类号： C30B19/06

CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B11/00 ,  C30B29/406 ,  H01L33/007 ,  H01S5/32341 ,  Y10T117/10 ,  Y10T117/1012 ,  Y10T117/1024 ,  Y10T117/1052 ,  Y10T117/106

摘要： A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a).

摘要翻译： III族氮化物晶体生长方法包括以下步骤：a）制备碱性材料和至少含有III族金属的物质的混合熔融液; b）从步骤a）中制备的混合熔融液体和至少含有氮的物质引起III族氮化物晶体的生长; 和c）产生可以将氮气引入到由步骤a）制备的熔融液体中的状态。

公开(公告)号：US5144458A

公开(公告)日：1992-09-01

申请号：US519756

申请日：1990-05-07

申请人： Kazuhiko Adachi ,  Masafumi Kumano

发明人： Kazuhiko Adachi ,  Masafumi Kumano

IPC分类号： H04N1/028 ,  H01L27/146 ,  H04N1/031

CPC分类号： H04N1/0316 ,  H04N1/0313

摘要： A total contact type image sensor includes a transparent substrate, an opaque layer formed on the transparent substrate and having document illuminating windows, a photosensitive layer formed on the transparent substrate and the opaque layer, a plurality of photoelectric conversion elements arranged on the transparent substrate with a predetermined pitch, and a transparent protection layer which covers a surface of a stacked structure which is made up of the transparent substrate, the opaque layer, a photosensitive layer and the photoelectric conversion elements. The photoelectric conversion elements respectively have at least one concave portion in a plan view of the total contact type image sensor. The document illumination windows are respectively formed on a periphery of a corresponding one of the photoelectric conversion elements with a 1:1 relationship, and the document illuminating window respectively have at least one convex portion in the plan view in correspondence with the concave portion of a corresponding one of the photoelectric conversion elements so as to surround the corresponding one of the photoelectric conversion elements.

摘要翻译： 全接触型图像传感器包括透明基板，形成在透明基板上的不透明层，具有文档照明窗口，形成在透明基板和不透明层上的感光层，多个光电转换元件，布置在透明基板上， 以及覆盖由透明基板，不透明层，感光层和光电转换元件构成的层叠结构的表面的透明保护层。 光电转换元件在全接触型图像传感器的平面图中分别具有至少一个凹部。 原稿照明窗分别以1：1的关系形成在相应的一个光电转换元件的周边上，文件照明窗口在平面图中分别具有至少一个与凹部的凹部对应的凸部 对应的一个光电转换元件，以便围绕对应的一个光电转换元件。

公开(公告)号：US4566453A

公开(公告)日：1986-01-28

申请号：US559207

申请日：1983-12-08

申请人： Masafumi Kumano ,  Ikue Kawashima ,  Masayuki Hirama ,  Yasuhiro Tsuji

发明人： Masafumi Kumano ,  Ikue Kawashima ,  Masayuki Hirama ,  Yasuhiro Tsuji

IPC分类号： A61B17/00 ,  A61B17/11 ,  A61B18/20 ,  A61B17/36

CPC分类号： A61B18/20 ,  A61B17/11 ,  A61B2017/00508

摘要： A vascular anastomosis apparatus using a carbon dioxide laser is proposed. The vascular anastomosis apparatus satisfies three conditions: a long focal distance of not less than 10 cm which is suitable for surgical operations under microscopic observation; a beam spot diameter of 0.1 to 0.3 mm when a laser beam is converged; and a stable, small beam output of not more than 100 mW. A visible guide beam having the same focusing point as that of the carbon dioxide laser beam is used in the vascular anastomosis apparatus.

摘要翻译： 提出了一种使用二氧化碳激光的血管吻合装置。 血管吻合装置满足三个条件：适用于显微镜观察手术的长焦距不小于10厘米; 当激光束会聚时，光点直径为0.1至0.3mm; 并且稳定的小光束输出不超过100mW。 在血管吻合装置中使用具有与二氧化碳激光束相同的聚焦点的可见导光束。

公开(公告)号：US5393953A

公开(公告)日：1995-02-28

申请号：US6075

申请日：1993-01-15

申请人： Kazunori Itoh ,  Masafumi Kumano

发明人： Kazunori Itoh ,  Masafumi Kumano

IPC分类号： C21D1/38 ,  B23K15/02 ,  H01L21/263 ,  B23K15/00

CPC分类号： B23K15/02

摘要： An electron-beam heating apparatus in which an electron-beam of a stable intensity can be obtained. The apparatus is provided with a heating unit having two electrodes comprising a cathode and an anode. A heating of a material is performed by using an electron-beam generated by glow discharge generated in a space between the two electrodes. The apparatus is provided with an electric power source and a current control unit. The electric power source supplies an electric current to the electrodes so as to generate the glow discharge in a space between the two electrodes. The current control unit controls the current flowing to the cathode so as to be constant to obtain a constant glow discharge formed in a space between the two electrodes. A constant electron-beam is obtained by the glow discharge.

摘要翻译： 能够获得稳定强度的电子束的电子束加热装置。 该装置设置有具有包括阴极和阳极的两个电极的加热单元。 通过使用由在两个电极之间的空间中产生的辉光放电产生的电子束来进行材料的加热。 该装置设置有电源和电流控制单元。 电源向电极提供电流，以便在两个电极之间的空间中产生辉光放电。 电流控制单元控制流向阴极的电流以恒定，以获得形成在两个电极之间的空间中的恒定辉光放电。 通过辉光放电获得恒定的电子束。

公开(公告)号：US5304357A

公开(公告)日：1994-04-19

申请号：US880755

申请日：1992-05-08

申请人： Yukito Sato ,  Mitsugu Irinoda ,  Kouichi Ohtaka ,  Takeshi Hino ,  Masafumi Kumano

发明人： Yukito Sato ,  Mitsugu Irinoda ,  Kouichi Ohtaka ,  Takeshi Hino ,  Masafumi Kumano

IPC分类号： H01L21/20 ,  H01L21/00 ,  H01L21/208 ,  H01L21/268 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L21/67121 ,  Y10S117/904 ,  Y10S148/09

摘要： An apparatus for zone melting a thin semiconductor film comprises an first laser for heating the thin semiconductor film, at least one additional laser for heating an insulating substrate, a first temperature detecting device for detecting the temperature of a melted portion of the thin semiconductor film, and a second temperature detecting device for detecting the temperature of a solidified portion of the thin semiconductor film. The apparatus further comprises a first controller for controlling an output of the first laser so as to maintain the temperature of the melted portion in a first predetermined temperature range, and a second controller for controlling an output of the additional laser so as to maintain the temperature of the solidified portion in a second predetermined temperature range.

摘要翻译： 用于对薄半导体膜进行区域熔融的装置包括用于加热薄半导体膜的第一激光器，用于加热绝缘基板的至少一个附加激光器，用于检测薄半导体膜的熔化部分的温度的第一温度检测装置， 以及第二温度检测装置，用于检测薄半导体膜的凝固部分的温度。 该装置还包括第一控制器，用于控制第一激光器的输出，以将熔融部分的温度保持在第一预定温度范围;以及第二控制器，用于控制附加激光器的输出，以便保持温度 在第二预定温度范围内的凝固部分。