公开(公告)号：US20120012814A1

公开(公告)日：2012-01-19

申请号：US13035304

申请日：2011-02-25

申请人： Yoshiyuki HARADA ,  Toshiki Hikosaka ,  Tomonari Shioda ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

发明人： Yoshiyuki HARADA ,  Toshiki Hikosaka ,  Tomonari Shioda ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

IPC分类号： H01L33/06 ,  H01L33/08

CPC分类号： H01L33/08 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/06

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part provided therebetween. The light emitting part includes a plurality of light emitting layers. Each of the light emitting layers includes a well layer region and a non-well layer region which is juxtaposed with the well layer region in a plane perpendicular to a first direction from the n-type semiconductor layer towards the p-type semiconductor layer. Each of the well layer regions has a common An In composition ratio. Each of the well layer regions includes a portion having a width in a direction perpendicular to the first direction of 50 nanometers or more.

摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和设置在其间的发光部分。 发光部分包括多个发光层。 每个发光层包括在垂直于从n型半导体层朝向p型半导体层的第一方向的平面中与阱层区域并置的阱层区域和非阱层区域。 每个阱层区域具有常见的An In组成比。 每个阱层区域包括在垂直于第一方向的方向上具有50纳米或更大的宽度的部分。

公开(公告)号：US08525197B2

公开(公告)日：2013-09-03

申请号：US13035304

申请日：2011-02-25

申请人： Yoshiyuki Harada ,  Toshiki Hikosaka ,  Tomonari Shioda ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

发明人： Yoshiyuki Harada ,  Toshiki Hikosaka ,  Tomonari Shioda ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

IPC分类号： H01L31/072

CPC分类号： H01L33/08 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/06

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part provided therebetween. The light emitting part includes a plurality of light emitting layers. Each of the light emitting layers includes a well layer region and a non-well layer region which is juxtaposed with the well layer region in a plane perpendicular to a first direction from the n-type semiconductor layer towards the p-type semiconductor layer. Each of the well layer regions has a common An In composition ratio. Each of the well layer regions includes a portion having a width in a direction perpendicular to the first direction of 50 nanometers or more.

摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和设置在其间的发光部分。 发光部分包括多个发光层。 每个发光层包括在垂直于从n型半导体层朝向p型半导体层的第一方向的平面中与阱层区域并置的阱层区域和非阱层区域。 每个阱层区域具有常见的An In组成比。 每个阱层区域包括在垂直于第一方向的方向上具有50纳米或更大的宽度的部分。

公开(公告)号：US20120032209A1

公开(公告)日：2012-02-09

申请号：US13032934

申请日：2011-02-23

申请人： Tomonari SHIODA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Koichi Tachibana ,  Shinya Nunoue

发明人： Tomonari SHIODA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Koichi Tachibana ,  Shinya Nunoue

IPC分类号： H01L33/32

CPC分类号： H01L33/06 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/04 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes: semiconductor layers; a multilayered structural body; and a light emitting portion. The multilayered structural body is provided between the semiconductor layers, and includes a first layer and a second layer including In. The light emitting portion is in contact with the multilayered structural body between the multilayered structural body and p-type semiconductor layer, and includes barrier layers and a well layer including In with an In composition ratio among group III elements higher than an In composition ratio among group III elements in the second layer. An average lattice constant of the multilayered structural body is larger than that of the n-type semiconductor layer. Difference between the average lattice constant of the multilayered structural body and that of the light emitting portion is less than difference between that of the multilayered structural body and that of the n-type semiconductor layer.

摘要翻译： 根据一个实施例，半导体发光器件包括：半导体层; 多层结构体; 和发光部分。 多层结构体设置在半导体层之间，并且包括第一层和包括In的第二层。 发光部分与多层结构体和p型半导体层之间的多层结构体接触，并且包括阻挡层和包括In的阱层，III族元素中的In组成比高于In组成比中的In组成比 第三组元素在第二层。 多层结构体的平均晶格常数大于n型半导体层的平均晶格常数。 多层结构体的平均晶格常数与发光部的平均晶格常数之差小于多层结构体与n型半导体层的平均晶格常数之差。

公开(公告)号：US08728237B2

公开(公告)日：2014-05-20

申请号：US12874594

申请日：2010-09-02

申请人： Tomonari Shioda ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Koichi Tachibana ,  Shinya Nunoue

发明人： Tomonari Shioda ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Koichi Tachibana ,  Shinya Nunoue

IPC分类号： C30B25/02

CPC分类号： H01L21/02636 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0254 ,  H01L33/007

摘要： A method for growing nitride semiconductor crystals contains: growing a first semiconductor layer containing InxGa1-xN (0

摘要翻译： 一种用于生长氮化物半导体晶体的方法包括：使用含有惰性气体的第一载气，在第一生长温度下，在衬底上生长含有In x Ga 1-x N（0

公开(公告)号：US20110197808A1

公开(公告)日：2011-08-18

申请号：US12874594

申请日：2010-09-02

申请人： Tomonari SHIODA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Koichi Tachibana ,  Shinya Nunoue

发明人： Tomonari SHIODA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Koichi Tachibana ,  Shinya Nunoue

IPC分类号： C30B25/10

CPC分类号： H01L21/02636 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0254 ,  H01L33/007

摘要： Certain embodiments provide a crystal growth method for nitride semiconductors, including: growing a first semiconductor layer containing InxGa1-xN (0

摘要翻译： 某些实施例提供了一种用于氮化物半导体的晶体生长方法，其包括：在第一生长温度下，在衬底上生长含有In x Ga 1-x N（0

公开(公告)号：US08093083B1

公开(公告)日：2012-01-10

申请号：US13029416

申请日：2011-02-17

申请人： Toshiki Hikosaka ,  Tomonari Shioda ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Koichi Tachibana ,  Shinya Nunoue

发明人： Toshiki Hikosaka ,  Tomonari Shioda ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Koichi Tachibana ,  Shinya Nunoue

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262

摘要： In one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The device includes a crystal layer including a nitride semiconductor. The crystal layer contains In and Ga atoms. The method can include forming the crystal layer by supplying a source gas including a first molecule including Ga atoms and a second molecule including In atoms onto a base body. The crystal layer has a ratio xs of a number of the In atoms to a total of the In atoms and the Ga atoms being not less than 0.2 and not more than 0.4. A vapor phase supply ratio xv of In is a ratio of a second partial pressure to a total of first and second partial pressures. The first and second partial pressures are pressure of the first and second molecules and degradation species of the first and second molecules on the source gas, respectively. (1−1/xv)/(1−1/xs) is less than 0.1.

摘要翻译： 在一个实施例中，公开了一种用于制造半导体发光器件的方法。 该器件包括包含氮化物半导体的晶体层。 晶体层含有In和Ga原子。 该方法可以包括通过将包括Ga原子的第一分子和包括In原子的第二分子的源气体供应到基体上来形成晶体层。 晶体层的In原子数与In原子的总和的比xs和Ga原子的比率不小于0.2且不大于0.4。 In的气相供给比xv是第二分压与第一和第二分压的总和的比。 第一和第二分压分别是源气体上的第一和第二分子的压力和第一和第二分子的降解物质。 （1-1 / xv）/（1-1 / xs）小于0.1。

公开(公告)号：US08564006B2

公开(公告)日：2013-10-22

申请号：US13405985

申请日：2012-02-27

申请人： Koichi Tachibana ,  Hisashi Yoshida ,  Hiroshi Ono ,  Hajime Nago ,  Yoshiyuki Harada ,  Toshiki Hikosaka ,  Maki Sugai ,  Toshiyuki Oka ,  Shinya Nunoue

发明人： Koichi Tachibana ,  Hisashi Yoshida ,  Hiroshi Ono ,  Hajime Nago ,  Yoshiyuki Harada ,  Toshiki Hikosaka ,  Maki Sugai ,  Toshiyuki Oka ,  Shinya Nunoue

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/16 ,  H01L33/32

摘要： According to one embodiment, a nitride semiconductor device includes a substrate and a semiconductor functional layer. The substrate is a single crystal. The semiconductor functional layer is provided on a major surface of the substrate and includes a nitride semiconductor. The substrate includes a plurality of structural bodies disposed in the major surface. Each of the plurality of structural bodies is a protrusion provided on the major surface or a recess provided on the major surface. An absolute value of an angle between a nearest direction of an arrangement of the plurality of structural bodies and a nearest direction of a crystal lattice of the substrate in a plane parallel to the major surface is not less than 1 degree and not more than 10 degrees.

摘要翻译： 根据一个实施例，氮化物半导体器件包括衬底和半导体功能层。 衬底是单晶。 半导体功能层设置在基板的主表面上并且包括氮化物半导体。 基板包括设置在主表面中的多个结构体。 多个结构体中的每一个是设置在主表面上的突起或设置在主表面上的凹部。 多个结构体的排列的最近方向与平行于主表面的平面中的基板的晶格的最近方向之间的角度的绝对值不小于1度且不大于10度 。

公开(公告)号：US20110143463A1

公开(公告)日：2011-06-16

申请号：US12875835

申请日：2010-09-03

申请人： Yoshiyuki HARADA ,  Koichi Tachibana ,  Toshiki Hikosaka ,  Hajime Nago ,  Shinya Nunoue

发明人： Yoshiyuki HARADA ,  Koichi Tachibana ,  Toshiki Hikosaka ,  Hajime Nago ,  Shinya Nunoue

IPC分类号： H01L21/66 ,  C23C16/00 ,  C23C16/34

CPC分类号： C23C16/45504 ,  C23C16/303 ,  C23C16/45574 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a vapor deposition method is disclosed for forming a nitride semiconductor layer on a substrate by supplying a group III source-material gas and a group V source-material gas. The method can deposit a first semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of not less than 10 atomic percent by supplying the group III source-material gas from a first outlet and by supplying the group V source-material gas from a second outlet. The method can deposit a second semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of less than 10 atomic percent by mixing the group III and group V source-material gases and supplying the mixed group III and group V source-material gases from at least one of the first outlet and the second outlet.

摘要翻译： 根据一个实施例，公开了一种通过提供III族源材料气体和V族原料气体在衬底上形成氮化物半导体层的气相沉积方法。 该方法可以通过从第一出口提供III族源材料气体并且通过提供第V族源极材料来沉积包括具有不小于10原子％的III族元素中Al的组分比例的氮化物半导体的第一半导体层， 来自第二出口的原料气体。 该方法可以通过混合第III族和第V族源材料气体并将第III族和V族源混合，从而沉积包含具有小于10原子％的III族元素中的Al的组分比例的氮化物半导体的第二半导体层 - 来自第一出口和第二出口中的至少一个的材料气体。

公开(公告)号：US08815717B2

公开(公告)日：2014-08-26

申请号：US12875835

申请日：2010-09-03

申请人： Yoshiyuki Harada ,  Koichi Tachibana ,  Toshiki Hikosaka ,  Hajime Nago ,  Shinya Nunoue

发明人： Yoshiyuki Harada ,  Koichi Tachibana ,  Toshiki Hikosaka ,  Hajime Nago ,  Shinya Nunoue

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： C23C16/45504 ,  C23C16/303 ,  C23C16/45574 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a vapor deposition method is disclosed for forming a nitride semiconductor layer on a substrate by supplying a group III source-material gas and a group V source-material gas. The method can deposit a first semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of not less than 10 atomic percent by supplying the group III source-material gas from a first outlet and by supplying the group V source-material gas from a second outlet. The method can deposit a second semiconductor layer including a nitride semiconductor having a compositional proportion of Al in group III elements of less than 10 atomic percent by mixing the group III and group V source-material gases and supplying the mixed group III and group V source-material gases from at least one of the first outlet and the second outlet.

摘要翻译： 根据一个实施例，公开了一种通过提供III族源材料气体和V族原料气体在衬底上形成氮化物半导体层的气相沉积方法。 该方法可以通过从第一出口提供III族源材料气体并且通过提供第V族源极材料来沉积包括具有不小于10原子％的III族元素中Al的组分比例的氮化物半导体的第一半导体层， 来自第二出口的原料气体。 该方法可以通过混合第III族和第V族源材料气体并将第III族和V族源混合，从而沉积包含具有小于10原子％的III族元素中的Al的组分比例的氮化物半导体的第二半导体层 - 来自第一出口和第二出口中的至少一个的材料气体。

公开(公告)号：US09065003B2

公开(公告)日：2015-06-23

申请号：US13405509

申请日：2012-02-27

申请人： Hisashi Yoshida ,  Koichi Tachibana ,  Tomonari Shioda ,  Toshiki Hikosaka ,  Jongil Hwang ,  Hung Hung ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Hisashi Yoshida ,  Koichi Tachibana ,  Tomonari Shioda ,  Toshiki Hikosaka ,  Jongil Hwang ,  Hung Hung ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L29/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/02

CPC分类号： H01L33/12 ,  H01L33/02 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×109/cm2 or less. A lattice mismatch factor between the first semiconductor layer and the light emitting layer is 0.11 percent or less.

摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层， 发出峰值波长为440纳米以上的光。 对第一半导体层施加拉伸应变。 第一半导体层的边缘位错密度为5×10 9 / cm 2以下。 第一半导体层和发光层之间的晶格失配因子为0.11％以下。