公开(公告)号：US20060279835A1

公开(公告)日：2006-12-14

申请号：US11360662

申请日：2006-02-24

Applicant: Koji Otsubo ,  Haruhiko Kuwatsuka

Inventor： Koji Otsubo ,  Haruhiko Kuwatsuka

IPC: H01S3/00 ,  H04B10/12

CPC classification number: G02F1/3534 ,  G02F2001/212 ,  G02F2002/006 ,  H04B10/299

Abstract: A wavelength conversion system includes a Mach-Zehnder interferometer including two optical waveguides, a non-linear medium provided on one of the two optical waveguides, and a branching ratio adjuster for adjusting the branching ratio of multiplexed light produced by multiplexing signal light and pumping light so that the powers of the signal light and the pumping light which are to be emitted from the two optical waveguides are equal to each other. The multiplexed light whose branching ratio is adjusted by the branching ratio adjuster is introduced into the two optical waveguides such that the non-linear medium generates phase conjugation light of the signal light and the light guided through the one optical waveguide and the light guided through the other one of the two optical waveguides interfere with each other so that the phase conjugation light is extracted as wavelength conversion light.

公开(公告)号：US08031394B2

公开(公告)日：2011-10-04

申请号：US12222696

申请日：2008-08-14

Applicant: Koji Otsubo ,  Haruhiko Kuwatsuka

Inventor： Koji Otsubo ,  Haruhiko Kuwatsuka

IPC: G02F1/365 ,  G02F2/02 ,  H04B10/17 ,  H04B10/12

CPC classification number: G02F1/3534 ,  G02F2001/212 ,  G02F2002/006 ,  H04B10/299

Abstract: A wavelength conversion system includes a Mach-Zehnder interferometer including two optical waveguides, a non-linear medium provided on one of the two optical waveguides, and a branching ratio adjuster for adjusting the branching ratio of multiplexed light produced by multiplexing signal light and pumping light so that the powers of the signal light and the pumping light which are to be emitted from the two optical waveguides are equal to each other. The multiplexed light whose branching ratio is adjusted by the branching ratio adjuster is introduced into the two optical waveguides such that the non-linear medium generates phase conjugation light of the signal light and the light guided through the one optical waveguide and the light guided through the other one of the two optical waveguides interfere with each other so that the phase conjugation light is extracted as wavelength conversion light.

Abstract translation: 一种波长转换系统包括：包括两个光波导的马赫 - 曾德干涉仪，设置在两个光波导中的一个上的非线性介质;以及分支比调节器，用于调节由多路复用信号光和泵浦光产生的复用光的分支比 使得要从两个光波导发射的信号光和泵浦光的功率彼此相等。 通过分支比调节器调整分支比的多路复用光被引入到两个光波导中，使得非线性介质产生信号光的相位共轭光和通过一个光波导引导的光和通过 两个光波导中的另一个彼此干涉，使得相位共轭光作为波长转换光被提取。

公开(公告)号：US20090080064A1

公开(公告)日：2009-03-26

申请号：US12222696

申请日：2008-08-14

Applicant: Koji Otsubo ,  Haruhiko Kuwatsuka

Inventor： Koji Otsubo ,  Haruhiko Kuwatsuka

IPC: G02F1/225 ,  G02F1/365

CPC classification number: G02F1/3534 ,  G02F2001/212 ,  G02F2002/006 ,  H04B10/299

Abstract: A wavelength conversion system includes a Mach-Zehnder interferometer including two optical waveguides, a non-linear medium provided on one of the two optical waveguides, and a branching ratio adjuster for adjusting the branching ratio of multiplexed light produced by multiplexing signal light and pumping light so that the powers of the signal light and the pumping light which are to be emitted from the two optical waveguides are equal to each other. The multiplexed light whose branching ratio is adjusted by the branching ratio adjuster is introduced into the two optical waveguides such that the non-linear medium generates phase conjugation light of the signal light and the light guided through the one optical waveguide and the light guided through the other one of the two optical waveguides interfere with each other so that the phase conjugation light is extracted as wavelength conversion light.

Abstract translation: 一种波长转换系统包括：包括两个光波导的马赫 - 曾德干涉仪，设置在两个光波导中的一个上的非线性介质;以及分支比调节器，用于调节由多路复用信号光和泵浦光产生的复用光的分支比 使得要从两个光波导发射的信号光和泵浦光的功率彼此相等。 通过分支比调节器调整分支比的多路复用光被引入到两个光波导中，使得非线性介质产生信号光的相位共轭光和通过一个光波导引导的光和通过 两个光波导中的另一个彼此干涉，使得相位共轭光作为波长转换光被提取。

公开(公告)号：US07436586B2

公开(公告)日：2008-10-14

申请号：US11360662

申请日：2006-02-24

Applicant: Koji Otsubo ,  Haruhiko Kuwatsuka

Inventor： Koji Otsubo ,  Haruhiko Kuwatsuka

IPC: H01S4/00 ,  H01S5/00 ,  G02F1/225

CPC classification number: G02F1/3534 ,  G02F2001/212 ,  G02F2002/006 ,  H04B10/299

Abstract: A wavelength conversion system includes a Mach-Zehnder interferometer including two optical waveguides, a non-linear medium provided on one of the two optical waveguides, and a branching ratio adjuster for adjusting the branching ratio of multiplexed light produced by multiplexing signal light and pumping light so that the powers of the signal light and the pumping light which are to be emitted from the two optical waveguides are equal to each other. The multiplexed light whose branching ratio is adjusted by the branching ratio adjuster is introduced into the two optical waveguides such that the non-linear medium generates phase conjugation light of the signal light and the light guided through the one optical waveguide and the light guided through the other one of the two optical waveguides interfere with each other so that the phase conjugation light is extracted as wavelength conversion light.

Abstract translation: 一种波长转换系统包括：包括两个光波导的马赫 - 曾德干涉仪，设置在两个光波导中的一个上的非线性介质;以及分支比调节器，用于调节由多路复用信号光和泵浦光产生的复用光的分支比 使得要从两个光波导发射的信号光和泵浦光的功率彼此相等。 通过分支比调节器调整分支比的多路复用光被引入到两个光波导中，使得非线性介质产生信号光的相位共轭光和通过一个光波导引导的光和通过 两个光波导中的另一个彼此干涉，使得相位共轭光作为波长转换光被提取。

公开(公告)号：US07875946B2

公开(公告)日：2011-01-25

申请号：US11259196

申请日：2005-10-27

Applicant: Nami Yasuoka ,  Haruhiko Kuwatsuka ,  Toru Uchida ,  Yoshihiro Yoneda

Inventor： Nami Yasuoka ,  Haruhiko Kuwatsuka ,  Toru Uchida ,  Yoshihiro Yoneda

IPC: H01L31/107

CPC classification number: H01L31/1864 ,  H01L31/0232 ,  H01L31/02327 ,  H01L31/035281 ,  H01L31/107 ,  H01L31/1075

Abstract: In order to improve reliability by preventing edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector includes a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.

Abstract translation: 为了通过防止具有诸如台面APD的台面结构的半导体光电检测器中的边缘破坏来提高可靠性，半导体光电检测器包括形成在形成在半导体基板上的第一导电类型的第一半导体层上的台面结构，台面结构 包括用于吸收光的光吸收层，用于降低电场强度的电场缓冲层，用于引起雪崩倍增的雪崩倍增层和第二导电类型的第二半导体层，其中雪崩倍增 在台面结构的侧面附近的部分的层的厚度比台面结构的中央部的厚度薄。

公开(公告)号：US20070216996A1

公开(公告)日：2007-09-20

申请号：US11471586

申请日：2006-06-21

Applicant: Shinsuke Tanaka ,  Ken Morito ,  Haruhiko Kuwatsuka

Inventor： Shinsuke Tanaka ,  Ken Morito ,  Haruhiko Kuwatsuka

IPC: H01S3/00

CPC classification number: H01S5/026 ,  G02B2006/12147 ,  H01S5/0268 ,  H01S5/0425 ,  H01S5/4025 ,  H01S5/50 ,  H01S5/5027

Abstract: An optical integrated device includes a plurality of input optical waveguides connected respectively to a plurality of input ports provided on one end face of the optical integrated device, a single output optical waveguide connected to an output port, an optical coupler for optically coupling signal lights propagated along the plural input optical waveguides to the single output optical waveguide, and a semiconductor optical amplifier gate array formed from a plurality of semiconductor optical amplifiers provided on the input optical waveguides, respectively, and each having an electrode on the surface thereof. The optical integrated device further includes a plurality of signal lines formed on the surface of the optical integrated device in such a manner as to extend from the electrodes to an end face of the optical integrated device on which none of the input ports and the output port is provided.

Abstract translation: 光学集成装置包括多个输入光波导，分别连接到设置在光学集成装置的一个端面上的多个输入端口，连接到输出端口的单个输出光波导，用于将传播的信号光光学耦合的光耦合器 沿着多个输入光波导到单输出光波导，以及半导体光放大器门阵列，分别由设置在输入光波导上的多个半导体光放大器形成，并且每个具有在其表面上的电极。 光学集成器件还包括多个信号线，其形成在光学集成器件的表面上，从电极延伸到光学集成器件的端面，其中没有输入端口和输出端口 被提供。

公开(公告)号：US06542286B2

公开(公告)日：2003-04-01

申请号：US09759338

申请日：2001-01-16

Applicant: Haruhiko Kuwatsuka

Inventor： Haruhiko Kuwatsuka

IPC: G02F1365

CPC classification number: G02F1/3536 ,  G02F2001/01766

Abstract: A multi quantum well layer has a lamination of first and second quantum well layers each sandwiched between barrier layers and defining a quantum well. The band gap of the second quantum well layer is larger than the band gap of the first quantum well layer. Current is flowed through the multi quantum well layer from a pair of electrodes. A first optical system input inputting a signal light wave to the multi quantum well layer via an input plane of the multi quantum well layer. A second optical system propagates an output light wave output from an output plane of the multi quantum well layer. A wavelength converting device is provided which can suppress the conversion efficiency from being lowered at a large detuning angular and obtain a relatively high conversion efficiency even at a negative detuning angular frequency.

Abstract translation: 多量子阱层具有分别夹在势垒层之间并限定量子阱的第一和第二量子阱层的叠层。 第二量子阱层的带隙大于第一量子阱层的带隙。 电流从一对电极流过多量子阱层。 第一光学系统，通过多量子阱层的输入面输入信号光波到多量子阱层。 第二光学系统传播从多量子阱层的输出平面输出的输出光波。 提供一种波长转换装置，其可以抑制转换效率在大的失谐角度下降低，并且即使在负失谐角频率下也能获得相对较高的转换效率。

公开(公告)号：US20060273421A1

公开(公告)日：2006-12-07

申请号：US11259196

申请日：2005-10-27

Applicant: Nami Yasuoka ,  Haruhiko Kuwatsuka ,  Toru Uchida ,  Yoshihiro Yoneda

Inventor： Nami Yasuoka ,  Haruhiko Kuwatsuka ,  Toru Uchida ,  Yoshihiro Yoneda

IPC: H01L31/107

CPC classification number: H01L31/1864 ,  H01L31/0232 ,  H01L31/02327 ,  H01L31/035281 ,  H01L31/107 ,  H01L31/1075

Abstract: In order to improve reliability by preventing an edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector comprises a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.

Abstract translation: 为了通过防止具有诸如台面APD的台面结构的半导体光电探测器中的边缘击穿来提高可靠性，半导体光电检测器包括形成在形成在半导体衬底上的第一导电类型的第一半导体层上的台面结构，台面 包括用于吸收光的光吸收层的结构，用于降低电场强度的电场缓冲层，用于引起雪崩倍增的雪崩倍增层和第二导电类型的第二半导体层，其中雪崩的厚度 在台面结构的侧面附近的部分的倍增层比台面结构的中央部分的厚度薄。

公开(公告)号：US5751758A

公开(公告)日：1998-05-12

申请号：US746646

申请日：1996-11-13

Applicant: Haruhiko Kuwatsuka

Inventor： Haruhiko Kuwatsuka

IPC: H01S3/10 ,  G02F1/35 ,  H01S5/00 ,  H01S5/042 ,  H01S5/06 ,  H01S5/0625 ,  H01S5/10 ,  H01S5/12 ,  H01S5/50 ,  H01S3/08

CPC classification number: H04B10/2531 ,  G02F1/3538 ,  H01S5/1071 ,  H01S5/50 ,  H01S3/10076 ,  H01S5/0608 ,  H01S5/0612 ,  H01S5/06258 ,  H01S5/124 ,  H01S5/5054 ,  H01S5/5063

Abstract: There is provided a device comprising a distributed feedback semicon-ductor laser having .lambda./4 phase shift diffraction grating and antireflection films coated on a light input end and a light output end to transmit phase conjugate wave, a probe beam light source for injecting the probe beam into the light input end of the distributed feedback semiconductor laser, a current supplying means for supplying electric current to the distributed feedback semiconductor laser to oscillate pump beam, and a lens system for extracting phase conjugate wave which is output from the light output end of the distributed feedback semiconductor laser by injecting the probe beam into the distributed feedback semiconductor laser which is oscillating the pump beam.

Abstract translation: 提供了一种包括具有λ/ 4相移衍射光栅的分布式反馈半导体激光器和涂覆在光输入端上的防反射膜和用于传输相位共轭波的光输出端的器件，用于注入探针的探测光束光源 射入分布式反馈半导体激光器的光输入端，用于向分布式反馈半导体激光器提供电流以振荡泵浦光束的电流供应装置，以及用于提取从光输出端输出的相位共轭波的透镜系统 分布式反馈半导体激光器通过将探针光束注入到振荡泵浦光束的分布式反馈半导体激光器中。

公开(公告)号：US20110068428A1

公开(公告)日：2011-03-24

申请号：US12926484

申请日：2010-11-22

Applicant: Nami Yasuoka ,  Haruhiko Kuwatsuka ,  Toru Uchida ,  Yoshihiro Yoneda

Inventor： Nami Yasuoka ,  Haruhiko Kuwatsuka ,  Toru Uchida ,  Yoshihiro Yoneda

IPC: H01L31/107 ,  H01L31/18

CPC classification number: H01L31/1864 ,  H01L31/0232 ,  H01L31/02327 ,  H01L31/035281 ,  H01L31/107 ,  H01L31/1075

Abstract: In order to improve reliability by preventing an edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector comprises a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.

Abstract translation: 为了通过防止具有诸如台面APD的台面结构的半导体光电探测器中的边缘击穿来提高可靠性，半导体光电检测器包括形成在形成在半导体衬底上的第一导电类型的第一半导体层上的台面结构，台面 包括用于吸收光的光吸收层的结构，用于降低电场强度的电场缓冲层，用于引起雪崩倍增的雪崩倍增层和第二导电类型的第二半导体层，其中雪崩的厚度 在台面结构的侧面附近的部分的倍增层比台面结构的中央部分的厚度薄。