摘要:
A brake system has a manually controlled brake pressure generator, independent controlled brake circuits each having a wheel brake and a flow control valve for electronically controlling the pressure of the wheel brake, a dynamic pressure source necessary for the pressure control by the flow control valve, a reservoir, a sensor such as a wheel speed sensor, and an electronic control unit. A pair of check valves for introducing and returning fluid are provided in parallel to each other between an output circuit of the brake pressure generator and each controlled brake circuit. A solenoid changeover valve for antilock is provided between the output circuit of the brake pressure generator and the check valves for introducing fluid to close the line during antilock control.
摘要:
A lens unit includes a tube lens; a single lens arranged at a downstream side with respect to the tube lens in an optical incidence direction; and a supporting member that supports the tube lens and the single lens. Reflection light from a document is condensed on an image sensor by the tube lens and the single lens to form an image. An end surface part, not facing the tube lens, of the single lens is in direct contact with the supporting member.
摘要:
A light irradiator including multiple point light sources arranged in a straight line, a light-transmissive light guiding member provided in front of the point light sources in an emission direction of beams of light emitted from the point light sources, the light guiding member guiding the beams of light in a predetermined direction toward a surface to be irradiated; and two or more protrusions protruding toward the point light sources, provided on a light entering surface of the light guiding member and arranged in the same direction as the point light sources. The light guiding member and the point light sources are positioned such that a distance between the protrusions provided to the light guiding member and irradiation surfaces of the point light sources is equal at two positions.
摘要:
A semiconductor laser element includes an active layer, an n-type carrier blocking layer arranged so as to be adjacent to the active layer and having a bandgap width that is equal to or greater than those of barrier layers, an n-type waveguide layer arranged on a side opposite to a side of the n-type carrier-blocking layer on which the active layer is arranged, so as to be adjacent to the n-type carrier blocking layer, an n-type clad layer arranged on a side opposite to a side of the n-type waveguide layer on which the active layer is arranged, so as to be adjacent to the n-type waveguide layer, and having a bandgap width that is greater than that of the n-type waveguide layer, and a p-type clad layer arranged on a side opposite to a side of the active layer on which the n-type carrier blocking layer is arranged, so as to be adjacent to the active layer, and having a bandgap width that is greater than those of the barrier layers and the n-type waveguide layer.
摘要:
In a multi-beam semiconductor laser including nitride III–V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III–V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.
摘要:
A semiconductor laser device comprises first current blocking layers formed to define a stripe-shaped current injected region extending in the direction in a front facet from which a laser light is emitted and a rear facet opposing thereto are connected, and a second current blocking layer formed to transverse the stripe-shaped current injected region in the vicinity of the front facet. The first current blocking layers and the second current blocking layer are made of the same layer. Accordingly, a current blocking structure is provided in the vicinity of the facet with the structure which is easily formed, causes no damage on the semiconductor laser device, and minimizes the property degradation, thereby a high facet COD level and high reliability in long-term continuous operations can be achieved.
摘要:
On an n-GaAs substrate are sequentially formed an n-GaAs buffer layer, an n-AlGaAs cladding layer, a non-doped InGaAs active layer, a p-AlxGa1−xAs cladding layer, a p-GaAs contact layer, and further an n-AlGaAs current blocking layer having a stripe-like window is embedded in the cladding layer. At the active layer side interface of the current blocking layer, a diffraction grating of cyclic bumps and dips shape is formed, but the diffraction grating is not formed in a region of the stripe-like window where the current blocking layer is not present, i.e., a current injection region. In this way, a semiconductor laser device of low oscillation threshold, high oscillation efficiency, high reliability, long life time, and stabilized oscillation wavelength can be realized.
摘要翻译:在n-GaAs衬底上依次形成n-GaAs缓冲层,n-AlGaAs覆层,非掺杂InGaAs有源层,p-Al x Ga 1-x As包层,p-GaAs接触层, 具有条状窗口的n-AlGaAs电流阻挡层嵌入包层中。 在电流阻挡层的有源层侧界面,形成了循环凸起和凹陷形状的衍射光栅,但是衍射光栅不形成在不存在电流阻挡层的条状窗口的区域中,即 ,电流注入区域。 以这种方式,可以实现低振荡阈值,高振荡效率,高可靠性,长寿命和稳定的振荡波长的半导体激光器件。
摘要:
To overcome the dilemma on device design in control of waveguide mode experienced in the conventional weak wave-guide-laser and SCH structure laser, realize higher output and lower dispersion of radiation beam, and improve the waveguide mode, on both sides of an active layer, carrier blocking layers for reducing the waveguide function of the active layer are provided, and waveguide layers are provided on both outer sides of the carrier blocking layers, and cladding layers are provided on both outer sides of the waveguide layers, the active layer is lamination of side barrier layers and a quantum well layer sandwiched therebetween, or side barrier layers, and a quantum well layer and a barrier layer sandwiched therebetween, the composition of the quantum well layer is Ga.sub.y In.sub.1-y As (0.6
摘要:
A light irradiation system for irradiating light to an irradiation area extending in a main scanning direction of a document face when placed on an image scanning apparatus includes a light source; a light guiding member to guide light emitted from the light source; and a reflector to reflect a part of light exiting from the light guiding member to the document face. The irradiation area is irradiated by the reflection light reflected by the reflector and a direct light exiting from the light guiding member without reflection at the reflector. The light guiding member includes an incidence surface where the light from the light source enters; and an exit surface where the light entered from the incidence surface exits. The reflector is disposed at a position in a direction that light intensity of light emitting from the light source becomes the strongest.
摘要:
A light irradiator including multiple point light sources arranged in a straight line, a light-transmissive light guiding member provided in front of the point light sources in an emission direction of beams of light emitted from the point light sources, the light guiding member guiding the beams of light in a predetermined direction toward a surface to be irradiated; and two or more protrusions protruding toward the point light sources, provided on a light entering surface of the light guiding member and arranged in the same direction as the point light sources. The light guiding member and the point light sources are positioned such that a distance between the protrusions provided to the light guiding member and irradiation surfaces of the point light sources is equal at two positions.