利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

14 条记录 (耗时 0.015 秒)

    Process for producing phosophorous-doped silicon monocrystals having a select peripheral dopant concentration along a radial cross-section of such monocrystal
    1.
    发明授权
    Process for producing phosophorous-doped silicon monocrystals having a select peripheral dopant concentration along a radial cross-section of such monocrystal 失效
    具有沿着这种单晶的径向横截面的选择的外围掺杂剂浓度的产生磷掺杂硅单晶的方法

    公开(公告)号：US4126509A

    公开(公告)日：1978-11-21

    申请号：US735583

    申请日：1976-10-26

    申请人： Wolfgang Keller ,  Herbert Kramer ,  Konrad Reuschel

    发明人： Wolfgang Keller ,  Herbert Kramer ,  Konrad Reuschel

    IPC分类号： C30B13/12 ,  C30B13/06 ,  C30B29/06 ,  H01L21/18 ,  B01J17/12 ,  B01J17/40

    CPC分类号： C30B13/06

    摘要： A process for producing phosphorous-doped silicon monocrystals having a select peripheral depletion or enrichment of dopant atoms along the radial direction of such monocrystals comprises providing a silicon monocrystalline rod homogeneously doped with phosphorous, as by neutron doping, and subjecting such homogeneously doped monocrystalline rod to a peripheral zone melt cycle in a select atmosphere such that the peripheral melt zone depth within the monocrystalline rod is controlled so as to be less than the radius of the rod in accordance with the desired peripheral dopant concentration in the ultimately attained rod.

    摘要翻译： 具有沿这种单晶的径向方向选择外围缺陷或富集掺杂剂原子的磷掺杂硅单晶的方法包括提供均匀掺杂磷的硅单晶棒，如通过中子掺杂，并将这种均匀掺杂的单晶棒 在选择气氛中的周边区域熔融循环，使得单晶棒内的外围熔融区深度被控制为小于根据最终获得的棒中期望的外围掺杂剂浓度的棒的半径。

    Method for the manufacture of tubular bodies of semiconductor material
    6.
    发明授权
    Method for the manufacture of tubular bodies of semiconductor material 失效
    用于制造半导体材料管状体的方法

    公开(公告)号：US3979490A

    公开(公告)日：1976-09-07

    申请号：US417380

    申请日：1973-11-19

    申请人： Wolfgang Dietze ,  Konrad Reuschel ,  Andreas Kasper

    发明人： Wolfgang Dietze ,  Konrad Reuschel ,  Andreas Kasper

    IPC分类号： C23C16/01 ,  C23C16/22 ,  C30B23/00 ,  B01J17/30 ,  B01J17/32

    CPC分类号： C23C16/22 ,  C23C16/01 ,  C30B23/00

    摘要： For the manufacture of tubular bodies of semiconductor material, particularly of silicon, by the precipitation of a layer in the form of a hollow cylinder on a rod or tube-shaped, electrically heated carrier in a reaction gas suitable for the deposition of the semiconductor in question, with subsequent separation of the semiconductor layer from the carrier, the carrier is differentially heated in such a manner that the generated hollow-cylinder layer is given an annular, bead-like reinforcement; the separation of the tube obtained into parts is achieved by a cut made within the reinforcement.

    摘要翻译： 对于制造半导体材料，特别是硅的管状体，通过将中空圆筒形式的层沉淀在适于半导体沉积的反应气体中的棒状或管状电加热载体上 问题是随着半导体层与载体的分离，载体以这样一种方式进行差分加热，使得产生的中空圆筒层具有环形的珠状加强件; 通过在加强件内部制成的切口来实现将获得的管分离成部分。

    Method of producing hollow semiconductor bodies
    10.
    发明授权
    Method of producing hollow semiconductor bodies 失效
    中空半导体体的制造方法

    公开(公告)号：US3950479A

    公开(公告)日：1976-04-13

    申请号：US331501

    申请日：1973-02-12

    申请人： Konrad Reuschel ,  Arno Kersting ,  Wolfgang Keller

    发明人： Konrad Reuschel ,  Arno Kersting ,  Wolfgang Keller

    IPC分类号： C23C16/01 ,  B29D23/00 ,  B01J17/32 ,  B29C24/00 ,  B29D31/00

    CPC分类号： C23C16/01 ,  Y10S148/073 ,  Y10S148/122

    摘要： Described are two methods of producing a hollow body, comprised of semiconductor material, especially silicon, by precipitation from a gaseous compound of said semiconductor material upon the surface of a heated carrier body, which after a sufficiently thick layer of semiconductor material has been precipitated, is removed again without damaging said layer. One method is characterized by using a hollow carrier body, open at least at two opposite sides. In one embodiment, prior to the precipitation of the semiconductor material, one of the open sides of the carrier body is covered by a wafer from the same semiconductor material whose shape corresponds to the open side. Thereafter, the semiconductor material is precipitated from the gaseous compound until the desired layer thickness and a gas-tight connection is obtained between the layer and the covering semiconductor material. The second method precipitates a semiconductor layer and thereafter welds a cover on one or both open ends the tube.

    摘要翻译： 描述了通过从被加热的载体的表面上的所述半导体材料的气态化合物沉淀而形成半导体材料，特别是硅的中空体的两种方法，在已经沉积了足够厚的半导体材料之后， 再次被除去而不损坏所述层。 一种方法的特征在于使用中空载体，至少在两个相对侧开放。 在一个实施例中，在半导体材料沉淀之前，载体主体的开口侧之一由与形状对应于开口侧的相同的半导体材料被晶片覆盖。 此后，半导体材料从气态化合物中沉淀直到在层和覆盖半导体材料之间获得所需的层厚度和气密连接。 第二种方法沉淀半导体层，然后在一个或两个开放端焊接管。