摘要:
One aspect of the invention provides a substrate position detecting method for charged particle beam photolithography apparatus in order to be able to measure accurately and simply a substrate position on a stage. The substrate position detecting method for charged particle beam photolithography apparatus includes placing a substrate on a stage that can be moved in an X-direction and a Y-direction; measuring a position in the X-direction of the stage while moving the stage in the X-direction, and illuminating obliquely an upper surface of the substrate with a laser beam to receive light reflected from the substrate with a position sensing device; computing a barycentric position of the reflected light when the stage is moved in the X-direction; measuring a position in the Y-direction of the stage while moving the stage in the Y-direction, and illuminating obliquely the upper surface of the substrate with the laser beam to receive light reflected from the substrate with the position sensing device; computing a barycentric position of the reflected light when the stage is moved in the Y-direction; and computing the positions of the substrate from the position measurement results of the stage and the computed barycentric position.
摘要:
One aspect of the invention provides a substrate position detecting method for charged particle beam photolithography apparatus in order to be able to measure accurately and simply a substrate position on a stage. The substrate position detecting method for charged particle beam photolithography apparatus includes placing a substrate on a stage that can be moved in an X-direction and a Y-direction; measuring a position in the X-direction of the stage while moving the stage in the X-direction, and illuminating obliquely an upper surface of the substrate with a laser beam to receive light reflected from the substrate with a position sensing device; computing a barycentric position of the reflected light when the stage is moved in the X-direction; measuring a position in the Y-direction of the stage while moving the stage in the Y-direction, and illuminating obliquely the upper surface of the substrate with the laser beam to receive light reflected from the substrate with the position sensing device; computing a barycentric position of the reflected light when the stage is moved in the Y-direction; and computing the positions of the substrate from the position measurement results of the stage and the computed barycentric position.
摘要:
Disclosed is a semiconductor light-receiving device having high reproducibility and reliability. Also disclosed is a method for manufacturing a semiconductor light-receiving device. Specifically disclosed is a semiconductor light-receiving device 100 with a mesa structure wherein a light-absorbing layer 6, an avalanche multiplication layer 4 and an electric-field relaxation layer 5 are formed on a semiconductor substrate 2. The light-absorbing layer 6, avalanche multiplication layer 4 and electric-field relaxation layer 5 exposed in the side wall of the mesa structure are protected by an SiNx film or an SiOyNz film. The hydrogen concentration in the side wall surface of the electric-field relaxation layer 5 is set at not more than 15%, preferably not more than 10% of the carrier concentration of the electric-field relaxation layer 5.
摘要:
A numerical control device is disclosed having a parameter memory section 12B that stores discrete optimum parameters for respective operational modes, an operational mode setting switch 20 to allow operational modes to be selectively set through user's operation, and a defect content setting means for registering defect contents of machined results. The optimum parameter, suited for a particular operational mode selected and set with the operational mode setting switch 20, is retrieved for executing setting of the parameter while enabling setting of the parameter based on information obtained with the defect content setting means.
摘要:
A position control apparatus and method has been devised which provides for an improved means of suppressing tracking error from a variable position reference occurring when a control object positioned via a transmission mechanism with mechanical transmission error resumes movement from a state stopped at a target position. A selection between two alternative tracking error compensating means within the control apparatus is made based on whether the detected position of the control object changes in a period after the control object stops and before the variable position reference is input again to a control deviation generating unit.
摘要:
A lost motion correction value setting method for a machine tool of a hybrid control system that performs a positional loop control with both machine position signals outputted from position detecting scales for detecting machine positions and motor position signals outputted from rotary encoders for detecting a rotational angle of a feed driving servomotor includes executing a test program; periodically inputting the machine position signals outputted from the position detecting scale and the motor position signals outputted from the rotary encoder; determining errors by determining the difference between the machine position signals and the motor position signals, determining the difference between an average value on an advance side and an average value on a return side of the errors, and storing the difference in lost motion correction value memories as a dynamic lost motion correction value.
摘要:
The Si waveguide 305 includes a first conductivity-type Si layer 301 and an intrinsic Si layer 302, and a second conductivity-type light-absorption layer 303 is partially formed on an area thereof. During operation, a reverse bias is applied between the first conductivity-type Si layer 301 and the light-absorption layer 303. Since the light-absorption layer 303 has a conductivity type, it is not depleted when a voltage is applied, but the intrinsic Si layer 302 forming the Si waveguide 305 is depleted. Therefore, it is possible to reduce a CR time constant. Furthermore, since the intrinsic Si layer 302 can be formed on the first conductivity-type Si layer 301 in a continuous manner, it is possible to reduce lattice defects. As a result, it is possible to suppress the dark current generated in the light-receiving element.
摘要:
According to the present invention, there is provided an electrode structure which includes: a nitride semiconductor layer; an electrode provided over the nitride semiconductor layer; and an electrode protective film provided over the electrode, wherein the nitride semiconductor layer contains a metal nitride containing Nb, Hf or Zr as a constitutive element, the electrode has a portion having a metal oxide containing Ti or V as a constitutive element formed therein, and the electrode protective film covers at least a portion of the electrode, and contains a protective layer having Au or Pt as a constitutive element.
摘要:
A light receiving element 1 has a semiconductor substrate 101; a first mesa 11 provided over the semiconductor substrate 101, and having an active region and a first electrode (p-side electrode 111) provided over the active region; a second mesa 12 provided over the semiconductor substrate 101, and having a semiconductor layer and a second electrode (n-side electrode 121) provided over the semiconductor layer; and a third mesa 13 provided over the semiconductor substrate 101, and having a semiconductor layer, wherein the third mesa 13 is arranged so as to surround the first mesa 11.
摘要:
A feed velocity of a control axis and acceleration thereof do not exceed a maximum feed velocity and a maximum acceleration defined in mechanical specifications even if a radial operation is carried out for the purpose of a cut-in or escape operation in a contour describing control. A radial permissible maximum velocity (Vnp) and a radial permissible maximum acceleration (&agr;np) in a contour describing control using a circular interpolation is set separately from a setting value of a maximum feed velocity (Vm) of a control axis and that of a maximum acceleration (&agr;m) thereof set as mechanical specifications, and when a command of the circular interpolation is given, limitations are given to a radial velocity (Vn) and acceleration (&agr;n) so that the radial velocity (Vn) and acceleration (&agr;n) do not exceed the radial permissible maximum velocity (Vnp) and permissible maximum acceleration (&agr;np).