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26 条记录 (耗时 0.029 秒)

    Process for production of polysilane compound
    2.
    发明授权
    Process for production of polysilane compound 有权
    生产聚硅烷化合物的方法

    公开(公告)号：US08829139B2

    公开(公告)日：2014-09-09

    申请号：US12992775

    申请日：2009-05-15

    申请人： Kimihiko Oohata ,  Satoru Yamazaki ,  Masamichi Yasuhara ,  Jyunichi Kawachi

    发明人： Kimihiko Oohata ,  Satoru Yamazaki ,  Masamichi Yasuhara ,  Jyunichi Kawachi

    IPC分类号： C08G77/08 ,  C08G77/60 ,  C08G77/34

    CPC分类号： C08G77/60 ,  C08G77/08 ,  C08G77/34

    摘要： A method for easily producing high-purity polydimethylsilane or polydiphenylsilane, where by-products such as alkali metal salt and alkaline earth metal salt can be efficiently removed, is provided. Dimethyldichlorosilane or diphenyldichlorosilane is reacted with an alkali metal such as metal sodium and metal magnesium and/or an alkaline earth metal in an organic solvent such as toluene to obtain crude polydimethylsilane or crude polydiphenylsilane, methanol having dissolved therein an ether ester-type nonionic surfactant or a surfactant such as alkylbenzenesulfonate is added to the crude polydimethylsilane or the crude polydiphenylsilane to deactivate the remaining alkali metal and alkaline earth metal, and the crude polydimethylsilane or the crude polydiphenylsilane is washed with water in the presence of a surfactant to efficiently remove an alkali metal salt, an alkaline earth metal salt and the like, whereby high-purity polydimethylsilane or polydiphenylsilane is obtained.

    摘要翻译： 提供容易生产高纯度聚二甲基硅烷或聚二苯基硅烷的方法，其中可以有效地除去碱金属盐和碱土金属盐等副产物。 二甲基二氯硅烷或二苯基二氯硅烷与有机溶剂如甲苯中的金属钠和金属镁和/或碱土金属的碱金属反应，得到粗的聚二甲基硅烷或粗的聚二苯基硅烷，其中溶解有醚酯型非离子表面活性剂的甲醇或 将烷基苯磺酸盐等表面活性剂加入到粗聚二甲基硅烷或粗聚二苯基硅烷中，使剩余的碱金属和碱土金属失活，粗面聚二甲基硅烷或粗聚二苯基硅烷在表面活性剂存在下用水洗涤，有效地除去碱金属 盐，碱土金属盐等，得到高纯度聚二甲基硅烷或聚二苯基硅烷。

    Charged particle-beam exposure device and charged-particle-beam exposure method
    3.
    发明授权
    Charged particle-beam exposure device and charged-particle-beam exposure method 失效
    带电粒子束曝光装置和带电粒子束曝光方法

    公开(公告)号：US6137111A

    公开(公告)日：2000-10-24

    申请号：US84952

    申请日：1998-05-28

    申请人： Akio Yamada ,  Satoru Sagou ,  Hitoshi Watanabe ,  Satoru Yamazaki ,  Kiichi Sakamoto ,  Manabu Ohno ,  Kenichi Kawakami ,  Katsuhiko Kobayashi

    发明人： Akio Yamada ,  Satoru Sagou ,  Hitoshi Watanabe ,  Satoru Yamazaki ,  Kiichi Sakamoto ,  Manabu Ohno ,  Kenichi Kawakami ,  Katsuhiko Kobayashi

    IPC分类号： G03F1/00 ,  G03F1/20 ,  H01J37/304 ,  H01J37/317 ,  G03F9/00 ,  H01J37/00

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/86 ,  H01J37/3045 ,  H01J37/3174 ,  G03F1/20 ,  H01J2237/2817 ,  H01J2237/31794

    摘要： A method of detecting deficiency of an aperture used in a charged-particle-beam exposure process employing at least two exposure columns is disclosed, where each of the two exposure columns passes a charged-particle beam through the aperture formed through a mask to shape a cross section of the charged-particle beam before exposing the charged-particle beam onto an object. The method includes the steps of mounting masks having the same aperture to the at least two exposure columns; scanning, in each of the at least two exposure columns, the charged-particle beam over an area containing a mark on a surface substantially at the same height as the object after passing the charged-particle beam through the same aperture; obtaining, in each of the at least two exposure columns, a signal waveform corresponding to the scan by detecting charged particles scattered by the mark; and comparing the signal waveform between the at least two exposure columns.

    摘要翻译： 公开了一种检测在使用至少两个曝光柱的带电粒子束曝光工艺中使用的孔的缺陷的方法，其中两个曝光柱中的每一个通过带电粒子束穿过通过掩模形成的孔以形成 在将带电粒子束暴露在物体上之前的带电粒子束的横截面。 该方法包括以下步骤：将具有相同孔径的掩模安装到至少两个曝光柱; 在所述至少两个曝光柱中的每一个中，在将带电粒子束通过相同的孔之后，将包含在与物体基本上处于相同高度的表面上的标记的区域上的带电粒子束扫描; 在所述至少两个曝光列中的每一个中，通过检测由所述标记散射的带电粒子来获得对应于所述扫描的信号波形; 以及比较所述至少两个曝光列之间的信号波形。

    Processes for the preparation of 4(5)-amino-5(4)-carboxamidoimidazoles and intermediates thereof
    7.
    发明授权
    Processes for the preparation of 4(5)-amino-5(4)-carboxamidoimidazoles and intermediates thereof 有权
    制备4（5） - 氨基-5（4） - 羧酰氨基咪唑的方法及其中间体

    公开(公告)号：US06797828B1

    公开(公告)日：2004-09-28

    申请号：US10088425

    申请日：2002-03-15

    申请人： Hiroaki Shibasaki ,  Fumihiko Nagasaki ,  Mitsuru Takase ,  Satoru Yamazaki ,  Yutaka Ishii ,  Kimihiko Oohata

    发明人： Hiroaki Shibasaki ,  Fumihiko Nagasaki ,  Mitsuru Takase ,  Satoru Yamazaki ,  Yutaka Ishii ,  Kimihiko Oohata

    IPC分类号： C07D23370

    CPC分类号： C07C257/14 ,  C07D233/90

    摘要： The invention provides novel processes for preparing efficiently compounds of general formula (1) (wherein R1 and R2 are each independently hydrogen, optionally substituted C1-C10 alkyl, C3-C14 hydrocarbyl bearing alicyclic skeleton, or the like) and initermediates thereof. Compounds of general formula (I) can be prepared by subjecting compounds of general formula (II) and/or salts thereof to cyclization hydrolysis in an aqueous basic solution. Further, compounds of general formula (II) can be prepared from industrially easily available diaminomaleonitrile in a high yield.

    摘要翻译： 本发明提供有效制备通式（1）化合物（其中R 1和R 2各自独立地为氢，任选取代的C 1 -C 10烷基，C 3 -C 14烃基带有脂环骨架等）的化合物及其初始化物的新方法。 通式（I）的化合物可以通过使通式（II）的化合物和/或其盐在碱性水溶液中进行环化水解来制备。 此外，通式（II）的化合物可以从工业上容易获得的二氨基马来腈以高产率制备。

    Charged-particle-beam exposure device and charged-particle-beam exposure method
    8.
    发明授权
    Charged-particle-beam exposure device and charged-particle-beam exposure method 失效
    带电粒子束曝光装置和带电粒子束曝光方法

    公开(公告)号：US06222195B1

    公开(公告)日：2001-04-24

    申请号：US09637119

    申请日：2000-08-11

    申请人： Akio Yamada ,  Satoru Sagou ,  Hitoshi Watanabe ,  Satoru Yamazaki ,  Kiichi Sakamoto ,  Manabu Ohno ,  Kenichi Kawakami ,  Katsuhiko Kobayashi

    发明人： Akio Yamada ,  Satoru Sagou ,  Hitoshi Watanabe ,  Satoru Yamazaki ,  Kiichi Sakamoto ,  Manabu Ohno ,  Kenichi Kawakami ,  Katsuhiko Kobayashi

    IPC分类号： G03F900

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  G03F1/86 ,  H01J37/3045 ,  H01J37/3174 ,  H01J2237/2817 ,  H01J2237/31794

    摘要： A method of detecting deficiency of an aperture used in a charged-particle-beam exposure process employing at least two exposure columns is disclosed, where each of the two exposure columns passes a charged-particle beam through the aperture formed through a mask to shape a cross section of the charged-particle beam before exposing the charged-particle beam onto an object. The method includes the steps of mounting masks having the same aperture to the at least two exposure columns; scanning, in each of the at least two exposure columns, the charged-particle beam over an area containing a mark on a surface substantially at the same height as the object after passing the charged-particle beam through the same aperture; obtaining, in each of the at least two exposure columns, a signal waveform corresponding to the scan by detecting charged particles scattered by the mark; and comparing the signal waveform between the at least two exposure columns.

    摘要翻译： 公开了一种检测在使用至少两个曝光柱的带电粒子束曝光工艺中使用的孔的缺陷的方法，其中两个曝光柱中的每一个通过带电粒子束穿过通过掩模形成的孔以形成 在将带电粒子束暴露在物体上之前的带电粒子束的横截面。 该方法包括以下步骤：将具有相同孔径的掩模安装到至少两个曝光柱; 在所述至少两个曝光柱中的每一个中，在使带电粒子束通过相同的孔之后，在包含与物体基本上在与物体相同的高度的表面上的标记的区域上扫描带电粒子束; 在所述至少两个曝光列中的每一个中，通过检测由所述标记散射的带电粒子来获得对应于所述扫描的信号波形; 以及比较所述至少两个曝光列之间的信号波形。

    Mask and method of creating mask as well as electron-beam exposure method and electron-beam exposure device
    9.
    发明授权
    Mask and method of creating mask as well as electron-beam exposure method and electron-beam exposure device 失效
    掩模和创建掩模的方法以及电子束曝光方法和电子束曝光装置

    公开(公告)号：US5824437A

    公开(公告)日：1998-10-20

    申请号：US685958

    申请日：1996-07-22

    申请人： Takayuki Sakakibara ,  Satoru Sagoh ,  Satoru Yamazaki ,  Kiichi Sakamoto ,  Hiroshi Yasuda

    发明人： Takayuki Sakakibara ,  Satoru Sagoh ,  Satoru Yamazaki ,  Kiichi Sakamoto ,  Hiroshi Yasuda

    IPC分类号： G03F1/20 ,  H01J37/317 ,  G03F9/00

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31788

    摘要： A mask for exposure of an object by an electron beam is formed of a plate of material which blocks the electron beam and which has plural pattern exposure blocks defined therein, each having one or more aperture defining regions therein and, when selected, determining the shaping of the electron beam passing therethrough so as to expose a respective pattern on an object. Each aperture-defining region has one aperture or plural, spaced apertures formed respectively therein, having a total area size, selected to be smaller than the area size of the aperture defining region in accordance with controlling the current level of an electron beam passing therethrough, while reducing Coulomb interaction of the electron beam passing through the aperture or apertures of each aperture defining portion of the pattern exposure block.

    摘要翻译： 用于通过电子束曝光物体的掩模由阻挡电子束并且其中限定有多个图案曝光块的材料板形成，每个在其中具有一个或多个孔限定区域，并且当被选择时，确定成形 的电子束通过其中以使物体上的相应图案曝光。 每个孔限定区域具有根据控制通过其中的电子束的电流水平而分别形成的具有总面积尺寸的一个孔径或多个间隔开的孔，其选择为小于孔限定区域的面积尺寸， 同时减少通过图案曝光块的每个孔限定部分的孔或孔的电子束的库仑相互作用。