摘要:
There is provided a digital controller which can generate no oscillation even if sensing a load side and enables control of supplying a desired voltage to the load. In an power amplifier which supplies an output voltage vo to the load connected via a load connecting line, a load voltage vL and the output voltage vo are periodically sampled to calculate a manipulating variable ξ1 from the output voltage vo, the load voltage vL and an arbitrary target value r. Based on the manipulating variable ξ1 calculated, a control signal is output to the power amplifier. As a result, when connecting an LC filter with a load device 9 of the power amplifier intended for a control target and besides the load connecting line is long, a robust digital controller without generating oscillation even if sensing the load side is performed can be realized.
摘要:
There is provided a digital controller which can generate no oscillation even if sensing a load side and enables control of supplying a desired voltage to the load. In an power amplifier which supplies an output voltage vo to the load connected via a load connecting line, a load voltage vL and the output voltage vo are periodically sampled to calculate a manipulating variable ξ1 from the output voltage vo, the load voltage vL and an arbitrary target value r. Based on the manipulating variable ξ1 calculated, a control signal is output to the power amplifier. As a result, when connecting an LC filter with a load device 9 of the power amplifier intended for a control target and besides the load connecting line is long, a robust digital controller without generating oscillation even if sensing the load side is performed can be realized.
摘要:
A robust digital controller is equipped with a high degree of approximation and is able to incorporate a novel two-degree-of-freedom robust digital control system without substantially considering the magnitude of the control inputs and there is provided its designing device. A control compensating means is configured as an integral type control system in which a discrete transfer function Wry (z) between a target value r and a controlled variable y is approximated to a higher-approximate quadratic approximate model transfer function Wm (z) and an arithmetic processing can be performed within the digital controller based on the model transfer function Wm (z). Further, the designing device automatically calculates parameters constituting the control system. Consequently, a robust digital controller can be easily realized that is equipped with a high degree of approximation as compared with a conventional approximate digital control system for realizing a first-order model and is robust against output noises.
摘要:
There is provided a digital controller which can reduce a variation in output voltage as compared to the conventional digital controller at the time of abrupt changes in load and in input of a power amplifier. The digital controller is built in the power amplifier for supplying an output voltage vo to a load and is equipped with a manipulated variable calculating unit which detects the output voltage vo to calculate a manipulated variable ξ1 and a signal generating unit which converts the manipulated variable ξ1 into a signal for making the power amplifier operate. A feedforward function from an equivalent disturbance qy caused by the variation in the load is replaced by a feedback function from the output voltage vo and the manipulated variable ξ1, thereby allowing a transfer characteristic from the disturbance qy to the output voltage vo to result in a quadratic differential characteristic. Consequently, the variation in output voltage can be reduced as compared to the conventional controller at the time of the abrupt changes in the load and in the input of the power amplifier.
摘要:
There is provided a digital controller which can reduce a variation in output voltage as compared to the conventional digital controller at the time of abrupt changes in load and in input of a power amplifier. The digital controller is built in the power amplifier for supplying an output voltage vo to a load and is equipped with a manipulated variable calculating unit which detects the output voltage vo to calculate a manipulated variable ξ1 and a signal generating unit which converts the manipulated variable ξ1 into a signal for making the power amplifier operate. A feedforward function from an equivalent disturbance qy caused by the variation in the load is replaced by a feedback function from the output voltage vo and the manipulated variable ξ1, thereby allowing a transfer characteristic from the disturbance qy to the output voltage vo to result in a quadratic differential characteristic. Consequently, the variation in output voltage can be reduced as compared to the conventional controller at the time of the abrupt changes in the load and in the input of the power amplifier.
摘要:
A robust digital controller is equipped with a high degree of approximation and is able to incorporate a novel two-degree-of-freedom robust digital control system without substantially considering the magnitude of the control inputs and there is provided its designing device. A control compensating means is configured as an integral type control system in which a discrete transfer function Wry(z) between a target value r and a controlled variable y is approximated to a higher-approximate quadratic approximate model transfer function Wm(z) and an arithmetic processing can be performed within the digital controller based on the model transfer function Wm(z). Further, the designing device automatically calculates parameters constituting the control system. Consequently, a robust digital controller can be easily realized that is equipped with a high degree of approximation as compared with a conventional approximate digital control system for realizing a first-order model and is robust against output noises.
摘要:
An epitaxial growth method of semiconductor can reliably avoid irregularities from being produced when a II-VI compound semiconductor is grown epitaxially. When this method is applied to a method of manufacturing a semiconductor light-emitting device, it is possible to obtain a semiconductor light-emitting device having a long life and excellent light-emitting characteristic. When a II-VI compound semiconductor is grown epitaxially, a VI/II ratio, i.e., a supplying ratio of VI-group element and II-group element used in the epitaxial growth is selected in a range of from 1.3 to 2.5.
摘要:
A II-VI group compound semiconductor light-emitting device can emit light of a short wavelength at room temperature. Operation characteristics, such as current--voltage characteristics and current--light output characteristics can be stabilized and a life of this semiconductor light-emitting device can be extended. The semiconductor light-emitting device comprises a substrate (1), at least a first cladding layer (2) of a first conductivity type, an active layer (3) and a second cladding layer (4) of a second conductivity type, wherein at least the active layer (3) is made of a II-VI group compound semiconductor and the active layer (3) is doped by either or both of n-type and p-type dopants.
摘要:
A luminescent semiconductor device comprises: an active layer composed of a Group II-VI semiconductor device which comprises at least one Group II element selected from the group consisting of zinc, magnesium, beryllium, cadmium, manganese and mercury, and at least one Group VI element selected from the group consisting of oxygen, sulfur, selenium and tellurium. the Group II-VI compound semiconductor forming said active layer contains at least one element selected from the group consisting of magnesium, beryllium and cadmium as the Group II element and tellurium as the Group VI element. At least one antidiffusion layer preventing diffusion of these elements from the active layer is provided on at least one surface of the active layer.
摘要:
A II-VI group compound semiconductor light-emitting device can emit light of a short wavelength at room temperature. Operation characteristics, such as current--voltage characteristics and current--light output characteristics can be stabilized and a life of this semiconductor light-emitting device can be extended. The semiconductor light-emitting device comprises a substrate (1), at least a first cladding layer (2) of a first conductivity type, an active layer (3) and a second cladding layer (4) of a second conductivity type, wherein at least the active layer (3) is made of a II-VI group compound semiconductor and the active layer (3) is doped by either or both of n-type and p-type dopants.