摘要:
A memory circuit for use in a data processing circuit is described, in which memory cells have at least two states, each state being determined by both a first voltage level corresponding to a first supply line and a second voltage level corresponding to a second supply line. The memory circuit comprises a readable state in which information stored in a memory cell is readable and an unreadable state in which information stored in said memory cell is reliably retained but unreadable. Changing the first voltage level but keeping the second voltage level substantially constant effects a transition between the readable state and the unreadable state. In use, the static power consumption of the memory cell in the unreadable state is less than static power consumption of the memory cell in the readable state.
摘要:
An integrated circuit includes a plurality of processing stages each including processing logic 1014, a non-delayed signal-capture element 1016, a delayed signal-capture element 1018 and a comparator 1024. The non-delayed signal-capture element 1016 captures an output from the processing logic 1014 at a non-delayed capture time. At a later delayed capture time, the delayed signal-capture element 1018 also captures a value from the processing logic 1014. An error detection circuit 1026 and error correction circuit 1028 detect and correct random errors in the delayed value and supplies an error-checked delayed value to the comparator 1024. The comparator 1024 compares the error-checked delayed value and the non-delayed value and if they are not equal this indicates that the non-delayed value was captured too soon and should be replaced by the error-checked delayed value. The non-delayed value is passed to the subsequent processing stage immediately following its capture and accordingly error recovery mechanisms are used to suppress the erroneous processing which has occurred by the subsequent processing stages, such as gating the clock and allowing the correct signal values to propagate through the subsequent processing logic before restarting the clock. The operating parameters of the integrated circuit, such as the clock frequency, the operating voltage, the body biased voltage, temperature and the like are adjusted so as to maintain a finite non-zero error rate in a manner that increases overall performance.
摘要:
There is provided a memory for storing data comprising: a fast data reading mechanism operable to read a data value from said memory to generate a fast read result that is output from said memory for further processing; a slow data reading mechanism operable to read said data value from said memory to generate a slow read result available after said fast read result has been output for further processing, said slow data reading mechanism being less prone to error in reading said data value than said fast data reading mechanism; a comparator operable to compare said fast read result and said slow read result to detect if said fast read result differs from said slow read result; and error repair logic operable if said comparator detects that said fast read result differs from said slow read result to suppress said further processing using said fast read result, to output said slow read result in place of said fast read result and to restart said further processing based upon said slow read result.
摘要:
An integrated circuit includes a plurality of processing stages each including processing logic 2, a non-delayed latch 4, a delayed latch 8 and a comparator 6. The non-delayed latch 4 captures an output from the processing logic 2 at a non-delayed capture time. At a later delayed capture time, the delayed latch 8 also captures a value from the processing logic 2. The comparator 6 compares these values and if they are not equal this indicates that the non-delayed value was captured too soon and should be replaced by the delayed value. The non-delayed value is passed to the subsequent processing stage immediately following its capture and accordingly error recovery mechanisms are used to suppress the erroneous processing which has occurred by the subsequent processing stages, such as gating the clock and allowing the correct signal values to propagate through the subsequent processing logic before restarting the clock. The operating parameters of the integrated circuit, such as the clock frequency, the operating voltage, the body biased voltage, temperature and the like are adjusted so as to maintain a finite non-zero error rate in a manner that increases overall performance.
摘要:
An integrated circuit 2 has a specified range of runtime-variable operating parameters. Data processing circuits 4 within the integrated circuit 2 have associated error detection and error repair mechanisms 6. When operating within a narrow typical-case range of runtime-variable operating parameters the data processing circuits 4 operate correctly and substantially without error. When operating outside of this typical-case range but inside the specified range of permitted values for the run-time variable operating parameters, then the error detection and error repair circuit 6 operate to repair the errors which occur.
摘要:
An improved reference current generator is provided. A voltage difference generator generates two voltages that are separated by a relatively small electrical potential. The two closely separated voltages are applied across a resistive element with relatively large impedance value resulting in a small and stable reference current. The result is a power efficient, temperature compensated reference current generator.
摘要:
An improved voltage reference generator is provided. The voltage reference generator comprises: a first transistor having a gate electrode biased to place the first transistor in a weak inversion mode; and a second transistor connected in series with said first transistor and having a gate electrode biased to place the second transistor in a weak inversion mode, where the threshold voltage of the first transistor is smaller than the threshold voltage of the second transistor and the gate electrode of the second transistor is electrically coupled to a drain electrode of the second transistor and the source electrode of the first transistor to form an output for a reference voltage.
摘要:
An improved reference current generator is provided. A voltage difference generator generates two voltages that are separated by a relatively small electrical potential. The two closely separated voltages are applied across a resistive element with relatively large impedance value resulting in a small and stable reference current. The result is a power efficient, temperature compensated reference current generator.
摘要:
An improved voltage reference generator is provided. The voltage reference generator comprises: a first transistor having a gate electrode biased to place the first transistor in a weak inversion mode; and a second transistor connected in series with said first transistor and having a gate electrode biased to place the second transistor in a weak inversion mode, where the threshold voltage of the first transistor is smaller than the threshold voltage of the second transistor and the gate electrode of the second transistor is electrically coupled to a drain electrode of the second transistor and the source electrode of the first transistor to form an output for a reference voltage.
摘要:
A signal interface for interfacing with an address decoder and a method of address decoding are disclosed. The signal interface comprises: a signal capture element operable to receive an address portion signal associated with a read access to a memory and to provide a first interim address portion signal and a second interim address portion signal, the signal capture element being operable during a pre-charged period to provide a first pre-charged logic level as the first interim address portion signal and the first pre-charged logic level as the second interim address portion signal, the signal capture element being further operable during an evaluate period to output an address portion logic level representative of the address portion signal as the first interim address portion signal and an inverted address portion logic level representative of an inverted address portion signal as the second interim address portion signal; and an inverter circuit operable to receive the first interim address portion signal and the second interim address portion signal from which a first address portion signal and a second address portion signal is respectively derived, the inverter circuit being operable during the pre-charged period to output to an address decoder a second pre-charged logic level as the first address portion signal and the second pre-charged logic level as the second address portion signal, the receipt of the first address portion signal and the second address portion signal at the second pre-charged logic level causing the address decoder to be prevented from causing a data access to the memory from occurring, the inverter circuit having transfer characteristics which cause the first address portion signal and the second address portion signal to be maintained at voltage levels interpreted by the address decoder as being the second pre-charged logic level should the first interim address portion signal or the second interim address portion signal fail to transition to a valid logic level during the evaluate period. By maintaining the address portion signals in this way prevents the address decoder from selecting multiple word lines which ensures no corruption in the state stored in the memory can result due to the inadvertent flow of charge between cells in different rows of the memory even when metastable signals occur during the read access.