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    Method for reducing contact resistance of CMOS image sensor
    3.
    发明授权
    Method for reducing contact resistance of CMOS image sensor 有权
    降低CMOS图像传感器接触电阻的方法

    公开(公告)号：US08247262B2

    公开(公告)日：2012-08-21

    申请号：US12772539

    申请日：2010-05-03

    申请人： Kuan-Chieh Huang ,  Chih-Jen Wu ,  Chen-Ming Huang ,  Dun-Nian Yaung ,  An-Chun Tu

    发明人： Kuan-Chieh Huang ,  Chih-Jen Wu ,  Chen-Ming Huang ,  Dun-Nian Yaung ,  An-Chun Tu

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14689 ,  H01L21/28518

    摘要： A method for performing a CMOS Image Sensor (CIS) silicide process is provided to reduce pixel contact resistance. In one embodiment, the method comprises forming a Resist Protect Oxide (RPO) layer on the CIS, forming a Contact Etch Stop Layer (CESL), forming an Inter-Layer Dielectric (ILD) layer, performing contact lithography/etching, performing Physical Vapor Deposition (PVD) at a pixel contact hole area, annealing for silicide formation at pixel contact hole area, performing contact filling, and defining the first metal layer. The Resist Protect Oxide (RPO) layer can be formed without using a photo mask of Cell Resist Protect Oxide (CIRPO) photolithography for pixel array and/or without silicide process at pixel array. The method can include implanting N+ or P+ for pixel contact plugs at the pixel contact hole area. The contact filling can comprise depositing contact glue plugs and performing Chemical Mechanical Polishing (CMP).

    摘要翻译： 提供了用于执行CMOS图像传感器（CIS）硅化物处理的方法以减少像素接触电阻。 在一个实施例中，该方法包括在CIS上形成抗蚀保护氧化物（RPO）层，形成接触蚀刻停止层（CESL），形成层间介电层（ILD）层，进行接触光刻/蚀刻，进行物理蒸气 在像素接触孔区域沉积（PVD），在像素接触孔区域进行硅化物形成退火，进行接触填充和限定第一金属层。 可以形成抗蚀保护氧化物（RPO）层，而不使用用于像素阵列的和/或不在像素阵列处的硅化物处理的电池抗蚀保护氧化物（CIRPO）光刻的光掩模。 该方法可以包括在像素接触孔区域处植入用于像素接触插塞的N +或P +。 接触填充可以包括沉积接触胶塞并进行化学机械抛光（CMP）。

    Method for reducing contact resistance of CMOS image sensor
    6.
    发明授权
    Method for reducing contact resistance of CMOS image sensor 有权
    降低CMOS图像传感器接触电阻的方法

    公开(公告)号：US08586404B2

    公开(公告)日：2013-11-19

    申请号：US13556869

    申请日：2012-07-24

    申请人： Kuan-Chieh Huang ,  Chih-Jen Wu ,  Chen-Ming Huang ,  Dun-Nian Yaung ,  An-Chun Tu

    发明人： Kuan-Chieh Huang ,  Chih-Jen Wu ,  Chen-Ming Huang ,  Dun-Nian Yaung ,  An-Chun Tu

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14689 ,  H01L21/28518

    摘要： This description relates to a method for reducing CMOS Image Sensor (CIS) contact resistance, the CIS having a pixel array and a periphery. The method includes performing Physical Vapor Deposition (PVD) at a pixel contact hole area, annealing for silicide formation at the pixel contact hole area and performing contact filling. This description also relates to a method for reducing CMOS Image Sensor (CIS) contact resistance, the CIS having a pixel array and a periphery. The method includes implanting N+ or P+ for pixel contact plugs at a pixel contact hole area, performing Physical Vapor Deposition (PVD) at pixel contact hole area, annealing for silicide formation at the pixel contact hole area, performing contact filling and depositing a first metal film layer, wherein the first metal film layer links contact holes for a source, a drain, or a poly gate of a CMOS device.

    摘要翻译： 本说明书涉及用于降低CMOS图像传感器（CIS）接触电阻的方法，CIS具有像素阵列和周边。 该方法包括在像素接触孔区域进行物理气相沉积（PVD），在像素接触孔区域进行硅化物形成退火并进行接触填充。 该描述还涉及用于减小CMOS图像传感器（CIS）接触电阻的方法，CIS具有像素阵列和周边。 该方法包括在像素接触孔区域处对像素接触插塞注入N +或P +，在像素接触孔区域进行物理气相沉积（PVD），在像素接触孔区域进行硅化物形成退火，执行接触填充和沉积第一金属 膜层，其中所述第一金属膜层连接CMOS器件的源极，漏极或多晶硅栅极的接触孔。

    Enhanced defect scanning
    8.
    发明授权
    Enhanced defect scanning 有权
    增强缺陷扫描

    公开(公告)号：US08605276B2

    公开(公告)日：2013-12-10

    申请号：US13286617

    申请日：2011-11-01

    申请人： Chih-Jen Wu ,  Chen-Ming Huang ,  Kuan-Chieh Huang ,  Chi-Yuan Shih ,  Chin-Hsiang Lin

    发明人： Chih-Jen Wu ,  Chen-Ming Huang ,  Kuan-Chieh Huang ,  Chi-Yuan Shih ,  Chin-Hsiang Lin

    IPC分类号： G01N21/00 ,  G01N21/95

    CPC分类号： G01N21/9501 ,  G01N21/278 ,  G01N21/94 ,  G01N2021/8822 ,  G01N2021/8825

    摘要： One of the broader forms of the present disclosure involves a method of enhanced defect inspection. The method includes providing a substrate having defect particles and providing a fluid over the substrate and the defect particles, the fluid having a refractive index greater than air. The method further includes exposing the substrate and the defect particles to incident radiation through the fluid, and detecting, through the fluid, radiation reflected or scattered by the defect particles.

    摘要翻译： 本公开的更广泛形式之一涉及增强缺陷检查的方法。 该方法包括提供具有缺陷颗粒的基底并在基底和缺陷颗粒上提供流体，该流体的折射率大于空气。 该方法还包括将衬底和缺陷颗粒暴露于通过流体的入射辐射，以及通过流体检测由缺陷颗粒反射或散射的辐射。

    ENHANCED DEFECT SCANNING
    9.
    发明申请
    ENHANCED DEFECT SCANNING 有权
    增强缺陷扫描

    公开(公告)号：US20130107248A1

    公开(公告)日：2013-05-02

    申请号：US13286617

    申请日：2011-11-01

    申请人： Chih-Jen Wu ,  Chen-Ming Huang ,  Kuan-Chieh Huang ,  Chi-Yuan Shih ,  Chin-Hsiang Lin

    发明人： Chih-Jen Wu ,  Chen-Ming Huang ,  Kuan-Chieh Huang ,  Chi-Yuan Shih ,  Chin-Hsiang Lin

    IPC分类号： G01N21/00

    CPC分类号： G01N21/9501 ,  G01N21/278 ,  G01N21/94 ,  G01N2021/8822 ,  G01N2021/8825

    摘要： One of the broader forms of the present disclosure involves a method of enhanced defect inspection. The method includes providing a substrate having defect particles and providing a fluid over the substrate and the defect particles, the fluid having a refractive index greater than air. The method further includes exposing the substrate and the defect particles to incident radiation through the fluid, and detecting, through the fluid, radiation reflected or scattered by the defect particles.

    摘要翻译： 本公开的更广泛形式之一涉及增强缺陷检查的方法。 该方法包括提供具有缺陷颗粒的基底并在基底和缺陷颗粒上提供流体，该流体的折射率大于空气。 该方法还包括将衬底和缺陷颗粒暴露于通过流体的入射辐射，以及通过流体检测由缺陷颗粒反射或散射的辐射。