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    Thin-film deposition apparatus
    2.
    发明授权
    Thin-film deposition apparatus 失效
    薄膜沉积装置

    公开(公告)号：US06176929B1

    公开(公告)日：2001-01-23

    申请号：US09118177

    申请日：1998-07-17

    申请人： Yukio Fukunaga ,  Hiroyuki Shinozaki ,  Kiwamu Tsukamoto ,  Mitsunao Shibasaki ,  Kuniaki Horie ,  Hiroyuki Ueyama ,  Takeshi Murakami

    发明人： Yukio Fukunaga ,  Hiroyuki Shinozaki ,  Kiwamu Tsukamoto ,  Mitsunao Shibasaki ,  Kuniaki Horie ,  Hiroyuki Ueyama ,  Takeshi Murakami

    IPC分类号： C23C1600

    CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/4557 ,  C23C16/45591 ,  C23C16/46

    摘要： A compact thin-film deposition apparatus can promote a stable growth of a high quality thin-film product of uniform quality. The apparatus comprises a vacuum-tight deposition chamber enclosing a substrate holding device for holding a substrate. An elevator device for moving the substrate holding device and a gas showering head for flowing a film forming gas towards the substrate are provided. A transport opening and an exhaust opening are provided on a wall section of the deposition chamber at a height corresponding to the transport position and the deposition position, respectively. The deposition chamber is provided with a flow guiding member, and the flow guiding member comprises a cylindrical member to surround an elevating path of the substrate holding device and a first ring member to vertically divide a chamber space at a height between the exhaust opening and the transport opening.

    摘要翻译： 紧凑的薄膜沉积装置可以促进质量均匀的高质量薄膜产品的稳定生长。 该装置包括一个真空密封的沉积室，其包围用于保持基板的基板保持装置。 提供了一种用于移动基板保持装置的电梯装置和用于使成膜气体朝向基板流动的气体淋浴头。 输送开口和排气口分别设置在沉积室的壁部分上，其高度分别对应于输送位置和沉积位置。 沉积室设置有导流构件，并且流动引导构件包括圆筒构件以包围基板保持装置的升降路径和第一环构件，以在排气口和排气口之间的高度垂直分隔腔室空间 运输开放。

    Liquid feed vaporization system and gas injection device
    4.
    发明授权
    Liquid feed vaporization system and gas injection device 失效
    液体进料蒸发系统和气体注入装置

    公开(公告)号：US06282368B1

    公开(公告)日：2001-08-28

    申请号：US09663358

    申请日：2000-09-15

    申请人： Kuniaki Horie ,  Hidenao Suzuki ,  Tsutomu Nakada ,  Takeshi Murakami ,  Masahito Abe ,  Yuji Araki ,  Hiroyuki Ueyama

    发明人： Kuniaki Horie ,  Hidenao Suzuki ,  Tsutomu Nakada ,  Takeshi Murakami ,  Masahito Abe ,  Yuji Araki ,  Hiroyuki Ueyama

    IPC分类号： A61H3306

    CPC分类号： C23C16/45565 ,  C23C16/448 ,  C23C16/45561 ,  C23C16/4557

    摘要： A compact vaporizer system is presented to produce a high quality vapor feed from a liquid feed to be delivered to a chemical vapor deposition processing chamber to produce thin film devices based on highly dielectric or ferroelectric materials such as BaTiO3, SrTiO3 and other such materials. The vaporization apparatus comprises a feed tank for storing the liquid feed; feed delivery means for transporting the liquid feed by way of a feed delivery path; a vaporizer section disposed in the delivery path comprising a high temperature heat exchanger having a capillary tube for transporting the liquid feed and a heat source for externally heating the capillary tube; and a vaporization prevention section disposed upstream of the vaporizer section for preventing effects of the vaporizer section to the liquid feed within the vaporization prevention section.

    摘要翻译： 提供了一种紧凑的蒸发器系统，以从液体进料产生高品质的蒸气进料，以将其输送到化学气相沉积处理室，以产生基于高电介质或铁电材料如BaTiO 3，SrTiO 3等材料的薄膜器件。 蒸发装置包括用于储存液体进料的进料罐; 用于通过进料输送路径输送液体进料的进料输送装置; 设置在输送路径中的蒸发器部分包括具有用于输送液体进料的毛细管和用于外部加热毛细管的热源的高温热交换器; 以及设置在蒸发部的上游的防蒸发部，用于防止蒸发部对蒸发防止部内的液体进料的影响。

    Liquid feed vaporization system and gas injection device
    5.
    发明授权
    Liquid feed vaporization system and gas injection device 失效
    液体进料蒸发系统和气体注入装置

    公开(公告)号：US06195504B1

    公开(公告)日：2001-02-27

    申请号：US08974512

    申请日：1997-11-19

    申请人： Kuniaki Horie ,  Hidenao Suzuki ,  Tsutomu Nakada ,  Fumio Kuriyama ,  Takeshi Murakami ,  Masahito Abe ,  Yuji Araki ,  Hiroyuki Ueyama

    发明人： Kuniaki Horie ,  Hidenao Suzuki ,  Tsutomu Nakada ,  Fumio Kuriyama ,  Takeshi Murakami ,  Masahito Abe ,  Yuji Araki ,  Hiroyuki Ueyama

    IPC分类号： A61H3306

    CPC分类号： C23C16/45565 ,  C23C16/448 ,  C23C16/45561 ,  C23C16/4557

    摘要： A compact vaporizer system is presented to produce a high quality vapor feed from a liquid feed to be delivered to a chemical vapor deposition processing chamber to produce thin film devices based on highly dielectric or ferroelectric materials such as BaTiO3, SrTiO3 and others such materials. The vaporization apparatus comprises a feed tank for storing the liquid feed; feed delivery means for transporting the liquid feed by way of a feed delivery path; a vaporizer section disposed in the delivery path comprising a high temperature heat exchanger having a capillary tube for transporting the liquid feed and a heat source for externally heating the capillary tube; and a vaporization prevention section disposed upstream of the vaporizer section for preventing heating effects of the vaporizer section to the liquid feed within the vaporization prevention section.

    摘要翻译： 提供了一种紧凑的蒸发器系统，用于从液体进料产生高质量的蒸汽进料，以将其输送到化学气相沉积处理室，以产生基于高电介质或铁电材料如BaTiO 3，SrTiO 3等材料的薄膜器件。 蒸发装置包括用于储存液体进料的进料罐; 用于通过进料输送路径输送液体进料的进料输送装置; 设置在输送路径中的蒸发器部分包括具有用于输送液体进料的毛细管和用于外部加热毛细管的热源的高温热交换器; 以及蒸发防止部，其设置在所述蒸发部的上游侧，用于防止所述蒸发部对所述蒸发防止部内的所述液体进料的加热效果。

    Vapor-phase film growth apparatus and gas ejection head
    6.
    发明授权
    Vapor-phase film growth apparatus and gas ejection head 失效
    气相膜生长装置和气体喷射头

    公开(公告)号：US6132512A

    公开(公告)日：2000-10-17

    申请号：US3948

    申请日：1998-01-08

    申请人： Kuniaki Horie ,  Tsutomu Nakada ,  Takeshi Murakami ,  Hidenao Suzuki ,  Masahito Abe ,  Yuji Araki

    发明人： Kuniaki Horie ,  Tsutomu Nakada ,  Takeshi Murakami ,  Hidenao Suzuki ,  Masahito Abe ,  Yuji Araki

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  C23C16/00

    CPC分类号： C23C16/45574 ,  C23C16/45565 ,  C30B25/14

    摘要： A vapor-phase film growth apparatus includes a substrate holder for holding a substrate, a gas ejection head, and a radiant heat shield device. The substrate holder has a substrate heater therein, and the gas ejection head has a gas injection surface for ejecting a material gas toward a substrate held by the substrate holder. The radiant heat shield device is disposed between the substrate holder and the gas injection head in confronting relationship to the gas injection surface of the gas ejection nozzle. The substantially planar radiant heat shield device is permeable to gases and has a heating capability.

    摘要翻译： 气相膜生长装置包括用于保持基板的基板保持器，气体喷射头和辐射热屏蔽装置。 衬底保持器在其中具有衬底加热器，并且气体喷射头具有用于将材料气体朝向由衬底保持器保持的衬底喷射的气体注入表面。 辐射热屏蔽装置以与气体喷射嘴的气体注入表面相对的关系设置在衬底保持器和气体注入头之间。 基本上平面的辐射热屏蔽装置可透气并具有加热能力。

    Thin-film vapor deposition apparatus
    9.
    发明授权
    Thin-film vapor deposition apparatus 失效
    薄膜蒸镀装置

    公开(公告)号：US6022413A

    公开(公告)日：2000-02-08

    申请号：US664544

    申请日：1996-06-17

    申请人： Hiroyuki Shinozaki ,  Yukio Fukunaga ,  Takeshi Murakami ,  Kiwamu Tsukamoto

    发明人： Hiroyuki Shinozaki ,  Yukio Fukunaga ,  Takeshi Murakami ,  Kiwamu Tsukamoto

    IPC分类号： C23C16/458 ,  C23C16/46 ,  C30B25/10 ,  C30B25/12 ,  C23C14/00 ,  C23C16/00

    CPC分类号： C30B25/10 ,  C23C16/4584 ,  C23C16/46 ,  C30B25/12

    摘要： A thin-film vapor deposition apparatus has a reaction chamber for holding therein a substrate in an atmosphere isolated from an ambient atmosphere. For depositing a thin film on the substrate, the temperature of an inner wall of the reaction chamber is adjusted to control the temperature of the atmosphere in the reaction chamber, and the temperature of the substrate is also adjusted independently of the temperature of the atmosphere in the reaction chamber, while the substrate is being rotated at a high speed in the reaction chamber. Reactant gases required to deposit a thin film on the substrate are ejected from a reactant gas elector head toward the substrate in the reaction chamber. Remaining and excessive gases are discharged out of the reaction chamber.

    摘要翻译： 薄膜蒸镀装置具有用于在与环境气氛隔离的气氛中保持基板的反应室。 为了在基板上沉积薄膜，调整反应室内壁的温度以控制反应室中的气氛的温度，并且基板的温度也独立于大气温度 反应室，同时基板在反应室中高速旋转。 在基板上沉积薄膜所需的反应物气体从反应气体选择器头向反应室内的基板喷出。 剩余的和过量的气体从反应室排出。