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1.发明授权Metallic compound thin film that contains high-k dielectric metal, nitrogen, and oxygen 有权含有高k电介质金属，氮和氧的金属化合物薄膜公开(公告)号：US07772678B2
公开(公告)日：2010-08-10
申请号：US12333577
申请日：2008-12-12
CPC分类号： H01L29/66575 , H01L21/28185 , H01L21/28194 , H01L29/513 , H01L29/517 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： After the surface of the substrate is cleaned, an interface layer or an antidiffusion film is formed. A metal oxide film is built upon the antidiffusion film Annealing is done in an NH3 atmosphere so as to diffuse nitrogen in the metal oxide film. Building of the metal oxide film and diffusion of nitrogen are repeated several times, whereupon annealing is done in an O2 atmosphere. By annealing the film in an O2 atmosphere at a temperature higher than 650° C., the leak current in the metal oxide film is controlled.
摘要翻译： 在清洁基板的表面之后，形成界面层或反扩散膜。 在抗扩散膜上构建金属氧化物膜。在NH 3气氛中进行退火，以便在金属氧化物膜中扩散氮。 金属氧化物膜的构建和氮的扩散重复几次，随后在O 2气氛中进行退火。 通过在高于650℃的温度下在O 2气氛中退火该膜，可以控制金属氧化物膜中的漏电流。
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2.发明授权Method of fabricating a metal oxynitride thin film that includes a first annealing of a metal oxide film in a nitrogen-containing atmosphere to form a metal oxynitride film and a second annealing of the metal oxynitride film in an oxidizing atmosphere 有权制造金属氮氧化物薄膜的方法，其包括在含氮气氛中的金属氧化物膜的第一退火以形成金属氧氮化物膜和在氧化气氛中的金属氧氮化物膜的第二退火公开(公告)号：US07482234B2
公开(公告)日：2009-01-27
申请号：US10928045
申请日：2004-08-27
IPC分类号： H01L21/473
CPC分类号： H01L29/66575 , H01L21/28185 , H01L21/28194 , H01L29/513 , H01L29/517 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： After the surface of the substrate is cleaned, an interface layer or an antidiffusion film is formed. A metal oxide film is built upon the antidiffusion film Annealing is done in an NH3 atmosphere so as to diffuse nitrogen in the metal oxide film. Building of the metal oxide film and diffusion of nitrogen are repeated several times, whereupon annealing is done in an O2 atmosphere. By annealing the film in an O2 atmosphere at a temperature higher than 650° C., the leak current in the metal oxide film is controlled.
摘要翻译： 在清洁基板的表面之后，形成界面层或反扩散膜。 在抗扩散膜上构建金属氧化物膜。在NH 3气氛中进行退火，以便在金属氧化物膜中扩散氮。 金属氧化物膜的构建和氮的扩散重复几次，随后在O 2气氛中进行退火。 通过在高于650℃的温度下在O 2气氛中退火该膜，可以控制金属氧化物膜中的漏电流。
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3.发明申请公开(公告)号：US20050116306A1
公开(公告)日：2005-06-02
申请号：US10928045
申请日：2004-08-27
IPC分类号： H01L21/318 , H01L21/28 , H01L21/336 , H01L21/469 , H01L29/51 , H01L29/76 , H01L29/78 , H01L31/062 , H01L31/119
CPC分类号： H01L29/66575 , H01L21/28185 , H01L21/28194 , H01L29/513 , H01L29/517 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： After the surface of the substrate is cleaned, an interface layer or an antidiffusion film is formed. A metal oxide film is built upon the antidiffusion film Annealing is done in an NH3 atmosphere so as to diffuse nitrogen in the metal oxide film. Building of the metal oxide film and diffusion of nitrogen are repeated several times, whereupon annealing is done in an O2 atmosphere. By annealing the film in an O2 atmosphere at a temperature higher than 650° C., the leak current in the metal oxide film is controlled.
摘要翻译： 在清洁基板的表面之后，形成界面层或反扩散膜。 金属氧化物膜构建在抗扩散膜上。在NH 3气氛中进行退火，以便在金属氧化物膜中扩散氮。 金属氧化物膜的构建和氮的扩散重复数次，然后在O 2气氛中进行退火。 通过在高于650℃的温度下在O 2 2气氛中退火膜，控制金属氧化物膜中的漏电流。
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公开(公告)号：US20050236675A1
公开(公告)日：2005-10-27
申请号：US11114195
申请日：2005-04-26
IPC分类号： H01L27/092 , H01L21/28 , H01L21/316 , H01L21/8238 , H01L29/51 , H01L29/76 , H01L29/78
CPC分类号： H01L29/517 , H01L21/28194 , H01L21/823857 , H01L29/513 , H01L29/7833
摘要： To provide a semiconductor device that enables to suppress a defect density of a gate insulating film of an MISFET, gain a sufficient electric characteristic thereof, and make an Equivalent Oxide Thickness (EOT) of the gate insulating film 1.0 nm or less. The MISFETs are formed to have the gate insulating film formed on a main surface of a silicon substrate, and a gate electrode formed on the gate insulating film, wherein the gate insulating film includes a metal silicate layer formed by a metal oxide layer and a silicon oxide layer and the metal silicate layer is formed so as to have concentration gradients of metal and silicon from a silicon substrate side toward a gate electrode side.
摘要翻译： 为了提供能够抑制MISFET的栅极绝缘膜的缺陷密度的半导体器件，获得足够的电特性，并使栅极绝缘膜的等效氧化物厚度（EOT）为1.0nm以下。 MISFET形成为具有形成在硅衬底的主表面上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极，其中栅极绝缘膜包括由金属氧化物层形成的金属硅酸盐层和硅 氧化物层和金属硅酸盐层形成为具有从硅衬底侧到栅电极侧的金属和硅的浓度梯度。
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公开(公告)号：US20080026148A1
公开(公告)日：2008-01-31
申请号：US10585267
申请日：2004-12-22
IPC分类号： C23C16/00
CPC分类号： C23C16/45527 , C23C16/45531 , C23C16/45544
摘要： A throughput during a process of forming a thin film is improved and a thin film of high quality is produced at low cost.For this purpose, a film forming system comprises a chamber 8, a precursory gas supplying line 2 to supply the chamber 8 with precursory gas, a reactive gas supplying line 1 to supply the chamber 8 with reactive gas, and a purge gas supplying line 3 to supply purge gas that purges the precursory gas and the reactive gas, and forms a thin film on a substrate 82 in the chamber 8 by supplying the precursory gas or the reactive gas and purging alternately, and further comprises a middle line 22 having a certain volume that is arranged on a part or all of the precursor supplying line 2 and into which the precursory gas can be filled at a time when the precursory gas is not supplied, and/or a middle line 12 having a certain volume that is arranged on a part or all of the reactive gas supplying line 1 and into which the reactive gas can be filled at a time when the reactive gas is not supplied.
摘要翻译： 在形成薄膜的过程中的生产量得到改善，并且以低成本生产高质量的薄膜。 为此，成膜系统包括：腔室8，为腔室8提供前兆气体的前体气体供应管线2;向反应气体供应腔室8的反应气体供应管线1;以及吹扫气体供应管线3 以提供吹扫前体气体和反应性气体的吹扫气体，并且通过供应前体气体或反应性气体并交替进行吹扫而在室8中的基板82上形成薄膜，并且还包括具有一定的中间线22的中间线22 配置在前体供给管线2的一部分或全部的体积，并且在不供给前体气体的时候可以填充前体气体的体积，和/或具有一定体积的中间线12 反应气体供应管线1的一部分或全部，并且在不供应反应气体的时候可以填充反应气体。
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6.发明授权Semiconductor device, method of manufacturing the same, and method of manufacturing metal compound thin film 有权半导体装置及其制造方法以及金属化合物薄膜的制造方法公开(公告)号：US07790627B2
公开(公告)日：2010-09-07
申请号：US12001381
申请日：2007-12-11
IPC分类号： H01L21/8242 , H01L21/4763 , H01L21/461 , H01L21/302 , H01L21/469
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A method of manufacturing a metal compound thin film is disclosed. The method may include forming a first metal compound layer on a substrate by atomic layer deposition, performing annealing on the first metal compound layer in an atmosphere containing a nitrogen compound gas, thereby diffusing nitrogen into the first metal compound layer, and forming a second metal compound layer on the first metal compound layer by atomic layer deposition.
摘要翻译： 公开了一种制造金属化合物薄膜的方法。 该方法可以包括通过原子层沉积在衬底上形成第一金属化合物层，在含有氮化合物气体的气氛中对第一金属化合物层进行退火，从而将氮扩散到第一金属化合物层中，并形成第二金属 通过原子层沉积在第一金属化合物层上的化合物层。
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公开(公告)号：US20060180082A1
公开(公告)日：2006-08-17
申请号：US10550753
申请日：2004-03-24
IPC分类号： C23C16/00
CPC分类号： H01L21/3141 , C23C16/45527 , C23C16/45529 , C23C16/56 , H01L21/3143 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31691
摘要： A metal atomic layer and an oxygen atomic layer are formed in this order by ALD, followed by rapid heating through RTA (Rapid Thermal Annealing). This cycle of steps is repeated to form a high dielectric constant film.
摘要翻译： 通过ALD依次形成金属原子层和氧原子层，然后通过RTA（快速热退火）快速加热。 重复该步骤循环以形成高介电常数膜。
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8.发明申请Semiconductor device, method of manufacturing the same, and method of manufacturing metal compound thin film 有权半导体装置及其制造方法以及金属化合物薄膜的制造方法公开(公告)号：US20080166867A1
公开(公告)日：2008-07-10
申请号：US12001381
申请日：2007-12-11
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A method of manufacturing a metal compound thin film is disclosed. The method may include forming a first metal compound layer on a substrate by atomic layer deposition, performing annealing on the first metal compound layer in an atmosphere containing a nitrogen compound gas, thereby diffusing nitrogen into the first metal compound layer, and forming a second metal compound layer on the first metal compound layer by atomic layer deposition.
摘要翻译： 公开了一种制造金属化合物薄膜的方法。 该方法可以包括通过原子层沉积在衬底上形成第一金属化合物层，在含有氮化合物气体的气氛中对第一金属化合物层进行退火，从而将氮扩散到第一金属化合物层中，并形成第二金属 通过原子层沉积在第一金属化合物层上的化合物层。
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9.发明授权Semiconductor device, process for producing the same and process for producing metal compound thin film 有权半导体装置及其制造方法以及金属化合物薄膜的制造方法公开(公告)号：US07372112B2
公开(公告)日：2008-05-13
申请号：US10550643
申请日：2005-03-24
IPC分类号： H01L29/792
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A high dielectric gate insulating film having the structure that a high-nitrogen layer, a low-nitrogen layer, and a high-nitrogen layer are layered in this order from a silicon-substrate side.
摘要翻译： 具有高氮层，低氮层和高氮层的结构的高介电栅极绝缘膜从硅衬底侧依次层叠。
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公开(公告)号：US07419920B2
公开(公告)日：2008-09-02
申请号：US11301400
申请日：2005-12-12
IPC分类号： H01L21/31
CPC分类号： H01L21/02194 , C23C16/40 , C23C16/45531 , H01L21/02205 , H01L21/0228 , H01L21/3141 , H01L21/31604 , H01L21/31641 , H01L21/31645
摘要： A metal oxide thin film may be obtained by providing a source gas and an oxidizer gas. The source gas may include a hydrolyzable metallic compound. The oxidizer gas may include a hydrate of a metal salt. The metal oxide thin film may be obtained by alternately feeding the source gas and the oxidizer gas into a reaction chamber in which a substrate is placed.
摘要翻译： 可以通过提供源气体和氧化剂气体来获得金属氧化物薄膜。 源气体可以包括可水解的金属化合物。 氧化剂气体可以包括金属盐的水合物。 可以通过将源气体和氧化剂气体交替地供给到其中放置基板的反应室中来获得金属氧化物薄膜。
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