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    PATTERNING RESOLUTION ENHANCEMENT COMBINING INTERFERENCE LITHOGRAPHY AND SELF-ALIGNED DOUBLE PATTERNING TECHNIQUES
    1.
    发明申请
    PATTERNING RESOLUTION ENHANCEMENT COMBINING INTERFERENCE LITHOGRAPHY AND SELF-ALIGNED DOUBLE PATTERNING TECHNIQUES 审中-公开
    组合分辨率增强组合干涉光刻和自对准双模式技术

    公开(公告)号：US20090246706A1

    公开(公告)日：2009-10-01

    申请号：US12060612

    申请日：2008-04-01

    申请人： RUDOLF HENDEL ,  Zhilong Rao ,  Kuo-Shih Liu

    发明人： RUDOLF HENDEL ,  Zhilong Rao ,  Kuo-Shih Liu

    IPC分类号： G03F7/20 ,  G03F7/26

    CPC分类号： H01L21/3086 ,  G03F7/70408 ,  G03F7/7045 ,  H01L21/3088

    摘要： A method for providing regular line patterns using interference lithography and sidewall patterning techniques is provided according to one embodiment. The method comprising may include producing regularly spaced parallel lines on a template using interference lithography techniques and then depositing sidewalls on the longitudinal sides of the regularly spaced parallel lines using sidewall patterning techniques. Various deposition and etching steps may also be included. The embodiments of the invention may provide regular line patterns with a line density half the interference lithography line density. Various lithography techniques may also be used to crop rounded connecting resulting from the sidewall patterning and/or to alter portions of the line pattern.

    摘要翻译： 根据一个实施例，提供了使用干涉光刻和侧壁图案化技术来提供规则线图案的方法。 包括的方法可以包括使用干涉光刻技术在模板上产生规则间隔的平行线，然后使用侧壁图案化技术在规则间隔开的平行线的纵向侧面上沉积侧壁。 还可以包括各种沉积和蚀刻步骤。 本发明的实施例可以提供规则的线图案，线密度是干涉光刻线密度的一半。 也可以使用各种光刻技术来裁剪由侧壁构图产生的圆形连接和/或改变线图案的部分。

    USING PHASE DIFFERENCE OF INTERFERENCE LITHOGRAPHY FOR RESOLUTION ENHANCEMENT
    2.
    发明申请
    USING PHASE DIFFERENCE OF INTERFERENCE LITHOGRAPHY FOR RESOLUTION ENHANCEMENT 有权
    使用干扰图的相位差来进行分辨率增强

    公开(公告)号：US20090046263A1

    公开(公告)日：2009-02-19

    申请号：US11838363

    申请日：2007-08-14

    申请人： Kuo-Shih Liu ,  Rudolf Hendel

    发明人： Kuo-Shih Liu ,  Rudolf Hendel

    IPC分类号： G03B27/42 ,  G03B27/54 ,  G03C5/00

    CPC分类号： G03F7/70408 ,  G02B27/14

    摘要： Interference lithography (IL) system and methods are disclosed according to embodiments of the invention. Two beams of coherent light with a first phase difference expose a first interference pattern on a nonlinear photoresist. A second interference pattern may be exposed on the nonlinear photoresist using the same coherent light beams with a second phase difference. The difference between the first and second phase differences is between 70° and 270°. The ensuing pattern is a composite of the first and second interference patterns. The IL may employ a third and fourth light beam.

    摘要翻译： 根据本发明的实施例公开了干涉光刻（IL）系统和方法。 具有第一相位差的两束相干光在非线性光刻胶上暴露出第一干涉图案。 可以使用具有第二相位差的相同相干光束在非线性光致抗蚀剂上暴露第二干涉图案。 第一和第二相位差之间的差值在70°和270°之间。 随后的模式是第一和第二干涉图案的组合。 IL可以采用第三和第四光束。

    Using phase difference of interference lithography for resolution enhancement
    3.
    发明授权
    Using phase difference of interference lithography for resolution enhancement 有权
    使用干涉光刻相位差分辨率增强

    公开(公告)号：US08582079B2

    公开(公告)日：2013-11-12

    申请号：US11838363

    申请日：2007-08-14

    申请人： Kuo-Shih Liu ,  Rudolf Hendel

    发明人： Kuo-Shih Liu ,  Rudolf Hendel

    IPC分类号： G03B27/44 ,  G03B27/54 ,  G03B27/32 ,  G03B27/42

    CPC分类号： G03F7/70408 ,  G02B27/14

    摘要： Interference lithography (IL) system and methods are disclosed according to embodiments of the invention. Two beams of coherent light with a first phase difference expose a first interference pattern on a nonlinear photoresist. A second interference pattern may be exposed on the nonlinear photoresist using the same coherent light beams with a second phase difference. The difference between the first and second phase differences is between 70° and 270°. The ensuing pattern is a composite of the first and second interference patterns. The IL may employ a third and fourth light beam.

    摘要翻译： 根据本发明的实施例公开了干涉光刻（IL）系统和方法。 具有第一相位差的两束相干光在非线性光刻胶上暴露出第一干涉图案。 可以使用具有第二相位差的相同相干光束在非线性光致抗蚀剂上暴露第二干涉图案。 第一和第二相位差之间的差值在70°和270°之间。 随后的模式是第一和第二干涉图案的组合。 IL可以采用第三和第四光束。

    INTEGRATED INTERFERENCE-ASSISTED LITHOGRAPHY
    4.
    发明申请
    INTEGRATED INTERFERENCE-ASSISTED LITHOGRAPHY 审中-公开
    综合干扰辅助图像

    公开(公告)号：US20100002210A1

    公开(公告)日：2010-01-07

    申请号：US12200108

    申请日：2008-08-28

    申请人： RUDOLF HENDEL ,  Kuo-Shih Liu

    发明人： RUDOLF HENDEL ,  Kuo-Shih Liu

    IPC分类号： G03B27/42

    CPC分类号： G03F7/7045 ,  G03F7/70408 ,  G03F7/70991

    摘要： A lithography scanner and track system is provided that includes an interference lithography system according to one embodiment. The scanner provides a first optical exposure of a wafer. The track system provides pre and post-processing functions on a wafer. The interference lithography system may be included within the scanner and may expose a wafer either before or after the first optical exposure. The interference lithography system may also be included within the track system as part of the pre or post processing. The first optical exposure may include optical photolithography.

    摘要翻译： 提供了一种包括根据一个实施例的干涉光刻系统的光刻扫描器和轨道系统。 扫描器提供晶片的第一光学曝光。 轨道系统在晶片上提供预处理和后处理功能。 干涉光刻系统可以包括在扫描仪内，并且可以在第一光学曝光之前或之后暴露晶片。 干涉光刻系统也可以作为前处理或后处理的一部分包括在轨道系统内。 第一光学曝光可以包括光学光刻。

    Reduction of plasma edge effect on plasma enhanced CVD processes
    7.
    发明授权
    Reduction of plasma edge effect on plasma enhanced CVD processes 有权
    降低等离子体增强CVD工艺的等离子体边缘效应

    公开(公告)号：US06553932B2

    公开(公告)日：2003-04-29

    申请号：US09853397

    申请日：2001-05-11

    申请人： Kuo-Shih Liu ,  Ramana Veerasingam ,  Zhi Xu ,  Ping Xu ,  Mario Dave Silvetti ,  Gang Chen

    发明人： Kuo-Shih Liu ,  Ramana Veerasingam ,  Zhi Xu ,  Ping Xu ,  Mario Dave Silvetti ,  Gang Chen

    IPC分类号： C23C1600

    CPC分类号： C23C16/45565 ,  C23C16/45591 ,  C23C16/509 ,  H01J37/3244 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32935

    摘要： An appparatus for confining plasma within a process zone of a substrate processing chamber. In one aspect, an apparatus comprises an annular member having an upper mounting surface, an inner confinement wall, and an outer confinement wall. The apparatus is disposed on or otherwise connected to a gas distribution assembly of the processing chamber to prevent plasma edge effects on the surface of a substrate. The apparatus provides a plasma choke aperture that reduces the volume of the process zone around the periphery of the substrate thereby eliminating uneven deposition of material around the edge of the substrate.

    摘要翻译： 一种用于将等离子体限制在衬底处理室的处理区内的设备。 一方面，一种装置包括具有上安装表面，内限制壁和外约束壁的环形构件。 该设备设置在处理室的气体分配组件上或以其他方式连接到处理室的气体分配组件，以防止等离子体对基板表面的影响。 该装置提供等离子体扼流圈，其减小了基板周边周围处理区的体积，从而消除了材料在基板边缘周围的不均匀沉积。

    SOLAR PANEL AND ELECTRODE STRUCTURE THEREOF AND MANUFACTURING METHOD THEREOF
    8.
    发明申请
    SOLAR PANEL AND ELECTRODE STRUCTURE THEREOF AND MANUFACTURING METHOD THEREOF 审中-公开
    太阳能电池板及其电极结构及其制造方法

    公开(公告)号：US20130037076A1

    公开(公告)日：2013-02-14

    申请号：US13570802

    申请日：2012-08-09

    申请人： Keh-Yao WANG ,  Kuo-Shih Liu

    发明人： Keh-Yao WANG ,  Kuo-Shih Liu

    IPC分类号： H01L31/05 ,  H01L31/18

    CPC分类号： H01L31/0508 ,  H01L31/0516 ,  Y02E10/50

    摘要： A solar panel and an electrode structure thereof and a manufacturing method thereof are provided. The electrode structure comprises a first conductive structure and a second conductive structure. The first conductive structure is electrically connected to a plurality of first pole contacts of a first solar cell. The second conductive structure is connected to the first conductive structure, and the first and the second conductive structures are substantially extended along a line. The second conductive structure is electrically connected to a plurality of second pole contacts of a second solar cell.

    摘要翻译： 提供太阳能电池板及其电极结构及其制造方法。 电极结构包括第一导电结构和第二导电结构。 第一导电结构电连接到第一太阳能电池的多个第一极触点。 第二导电结构连接到第一导电结构，并且第一和第二导电结构基本上沿着一条线延伸。 第二导电结构电连接到第二太阳能电池的多个第二极触点。

    Gas feedthrough with electrostatic discharge characteristic
    9.
    发明授权
    Gas feedthrough with electrostatic discharge characteristic 有权
    气体馈通带静电放电特性

    公开(公告)号：US06170430B2

    公开(公告)日：2001-01-09

    申请号：US09290780

    申请日：1999-04-13

    申请人： Kuo-Shih Liu ,  Ernest Cheung ,  Prasanth Kumar ,  John Ferguson ,  Michael G. Friebe ,  Ashish Shrotriya ,  William Nixon Taylor, Jr.

    发明人： Kuo-Shih Liu ,  Ernest Cheung ,  Prasanth Kumar ,  John Ferguson ,  Michael G. Friebe ,  Ashish Shrotriya ,  William Nixon Taylor, Jr.

    IPC分类号： C23C1600

    CPC分类号： H01J37/3244 ,  C23C16/455

    摘要： A gas feedthrough in a semiconductor processing apparatus comprises a static-dissipative composite material. This material is characterized by good resistance to electromigration and is preferably made of a homogeneous material. This apparatus for preventing the transfer of energy to a gas flown through a gas line and comprises a gas feedthrough comprising a static-dissipative material, the feedthrough having a first end for abuttingly contacting an electrically energized member and a second end for contacting a grounded member, the feedthrough defining a void therein along its length to house a gas line.

    摘要翻译： 半导体处理装置中的气体馈通包括静电消散复合材料。 该材料的特征在于良好的电迁移性，并且优选由均匀的材料制成。 该装置用于防止向气体管线流动的气体的能量传递，并且包括一个包含静电消散材料的气体馈通装置，该馈通装置具有一个第一端，用于邻接一个带电构件和一个第二端，用于接触接地构件 馈通在其长度上限定其中的空隙以容纳气体管线。