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    Phase-change and resistance-change random access memory devices and related methods of performing burst mode operations in such memory devices
    1.
    发明授权
    Phase-change and resistance-change random access memory devices and related methods of performing burst mode operations in such memory devices 有权
    相变和电阻变化随机存取存储器件以及在这种存储器件中执行突发模式操作的相关方法

    公开(公告)号：US08218360B2

    公开(公告)日：2012-07-10

    申请号：US12582880

    申请日：2009-10-21

    申请人： Kwang-Jin Lee ,  Young-kug Moon ,  Young-pil Kim

    发明人： Kwang-Jin Lee ,  Young-kug Moon ,  Young-pil Kim

    IPC分类号： G11C11/00 ,  G11C7/00

    CPC分类号： G11C13/004 ,  G11C7/1018 ,  G11C8/18 ,  G11C11/5678 ,  G11C13/00 ,  G11C13/0004

    摘要： Phase-change and resistance-change random access memory devices are provided which include a phase-change or resistance-change memory cell array and a sense amplifier that is configured to amplify data read from the phase-change memory cell array. These random access memory devices are configured to read data from a first word line of the phase-change or resistance-change memory cell array and to insert a dummy burst in which no data is read when a first boundary crossing occurs during a burst mode operation. Related methods of operating phase-change and/or resistance-change random access memory devices in burst mode are also provided.

    摘要翻译： 提供了相变和电阻变化随机存取存储器件，其包括相变或电阻变化存储单元阵列和被配置为放大从相变存储单元阵列读取的数据的读出放大器。 这些随机存取存储器件被配置为从相变或电阻变化存储单元阵列的第一字线读取数据，并且在突发模式操作期间发生第一边界交叉时插入其中没有读取数据的虚拟脉冲串 。 还提供了以突发模式操作相变和/或电阻变化随机存取存储器件的相关方法。

    Phase-Change and Resistance-Change Random Access Memory Devices and Related Methods of Performing Burst Mode Operations in Such Memory Devices
    2.
    发明申请
    Phase-Change and Resistance-Change Random Access Memory Devices and Related Methods of Performing Burst Mode Operations in Such Memory Devices 有权
    相变和电阻变化随机存取存储器件以及在这种存储器件中执行突发模式操作的相关方法

    公开(公告)号：US20100124102A1

    公开(公告)日：2010-05-20

    申请号：US12582880

    申请日：2009-10-21

    申请人： Kwang-Jin Lee ,  Young-kug Moon ,  Young-pil Kim

    发明人： Kwang-Jin Lee ,  Young-kug Moon ,  Young-pil Kim

    IPC分类号： G11C11/00 ,  G11C7/00

    CPC分类号： G11C13/004 ,  G11C7/1018 ,  G11C8/18 ,  G11C11/5678 ,  G11C13/00 ,  G11C13/0004

    摘要： Phase-change and resistance-change random access memory devices are provided which include a phase-change or resistance-change memory cell array and a sense amplifier that is configured to amplify data read from the phase-change memory cell array. These random access memory devices are configured to read data from a first word line of the phase-change or resistance-change memory cell array and to insert a dummy burst in which no data is read when a first boundary crossing occurs during a burst mode operation. Related methods of operating phase-change and/or resistance-change random access memory devices in burst mode are also provided.

    摘要翻译： 提供了相变和电阻变化随机存取存储器件，其包括相变或电阻变化存储单元阵列和被配置为放大从相变存储单元阵列读取的数据的读出放大器。 这些随机存取存储器件被配置为从相变或电阻变化存储单元阵列的第一字线读取数据，并且在突发模式操作期间发生第一边界交叉时插入其中没有读取数据的虚拟脉冲串 。 还提供了以突发模式操作相变和/或电阻变化随机存取存储器件的相关方法。

    Memory device using a variable resistive element
    6.
    发明授权
    Memory device using a variable resistive element 有权
    使用可变电阻元件的存储器件

    公开(公告)号：US08248860B2

    公开(公告)日：2012-08-21

    申请号：US12659840

    申请日：2010-03-23

    申请人： Kwang-Jin Lee ,  Chang-Soo Lee ,  Joon-Min Park ,  Hui-Kwon Seo ,  Qi Wang

    发明人： Kwang-Jin Lee ,  Chang-Soo Lee ,  Joon-Min Park ,  Hui-Kwon Seo ,  Qi Wang

    IPC分类号： G11C16/04

    CPC分类号： G11C13/0097 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/0088 ,  G11C2211/5646

    摘要： A memory device includes a memory cell array including a plurality of memory blocks, each memory block including a plurality of memory cells, a plurality of word lines coupled to rows of the plurality of memory cells, a plurality of bit lines coupled to columns of the plurality of memory cells, and a control unit controlling an erase operation so that erase data is simultaneously written in the plurality of memory cells corresponding to an erase unit. A first erase mode may include a first erase unit and a first erase data pattern. A second erase mode may include a second erase unit and a second erase pattern. At least one of the first and second erase units and the first and second erase data patterns are different.

    摘要翻译： 存储器件包括存储单元阵列，该存储单元阵列包括多个存储器块，每个存储器块包括多个存储器单元，耦合到多个存储器单元中的行的多个字线，耦合到多个存储器单元的列的多个位线 多个存储单元，以及控制擦除操作的控制单元，使得擦除数据被同时写入与擦除单元对应的多个存储单元中。 第一擦除模式可以包括第一擦除单元和第一擦除数据模式。 第二擦除模式可以包括第二擦除单元和第二擦除模式。 第一和第二擦除单元以及第一和第二擦除数据模式中的至少一个是不同的。

    Non-volatile memory device using variable resistance element with an improved write performance
    7.
    发明授权
    Non-volatile memory device using variable resistance element with an improved write performance 有权
    使用可变电阻元件的非易失性存储器件具有改进的写入性能

    公开(公告)号：US08194447B2

    公开(公告)日：2012-06-05

    申请号：US12314513

    申请日：2008-12-11

    申请人： Hye-Jin Kim ,  Kwang-Jin Lee ,  Du-Eung Kim ,  Hung-Jun An

    发明人： Hye-Jin Kim ,  Kwang-Jin Lee ,  Du-Eung Kim ,  Hung-Jun An

    IPC分类号： G11C16/04

    CPC分类号： G11C7/1078 ,  G11C5/14 ,  G11C7/1096 ,  G11C13/00 ,  G11C13/0004 ,  G11C13/0038 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/72

    摘要： A non-volatile memory device using a variable resistive element includes a memory cell array having a plurality of non-volatile memory cells, a first voltage generator generating a first voltage, a voltage pad receiving an external voltage that has a level higher than the first voltage, a sense amplifier supplied with the first voltage and reading data from the non-volatile memory cells selected from the memory cell array, and a write driver supplied with the external voltage and writing data to the non-volatile memory cells selected from the memory cell array.

    摘要翻译： 使用可变电阻元件的非易失性存储器件包括具有多个非易失性存储器单元的存储单元阵列，产生第一电压的第一电压发生器，接收高于第一电压的电平的外部电压的电压焊盘 电压，提供有第一电压的读出放大器和从存储单元阵列中选择的非易失性存储器单元读取数据，以及提供有外部电压的写入驱动器，并将数据写入从存储器中选择的非易失性存储器单元 单元格阵列。

    Variable resistance memory device and system thereof
    8.
    发明授权
    Variable resistance memory device and system thereof 有权
    可变电阻存储器件及其系统

    公开(公告)号：US08139432B2

    公开(公告)日：2012-03-20

    申请号：US12901168

    申请日：2010-10-08

    申请人： Byung-gil Choi ,  Beak-hyung Cho ,  Jun-Soo Bae ,  Kwang-Jin Lee

    发明人： Byung-gil Choi ,  Beak-hyung Cho ,  Jun-Soo Bae ,  Kwang-Jin Lee

    IPC分类号： G11C7/04

    CPC分类号： G11C7/18 ,  G11C7/04 ,  G11C8/12 ,  G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0026 ,  G11C13/004 ,  G11C2013/0054 ,  G11C2029/2602 ,  H01L27/24

    摘要： A nonvolatile memory device comprising: a plurality of memory banks, each of which operates independently and includes a plurality of resistance memory cells, each cell including a variable resistive element having a resistance varying depending on stored data; a plurality of global bit lines, each global bit line being shared by the plurality of memory banks; a temperature compensation circuit including one or more reference cells; and a data read circuit which is electrically connected to the plurality of global bit lines and performs a read operation by supplying at least one of the resistance memory cells with a current varying according to resistances of the reference cells.

    摘要翻译： 一种非易失性存储器件，包括：多个存储体，每个存储体各自独立地操作并且包括多个电阻存储器单元，每个单元包括具有根据存储的数据而变化的电阻的可变电阻元件; 多个全局位线，每个全局位线由多个存储体共享; 包括一个或多个参考单元的温度补偿电路; 以及数据读取电路，其电连接到所述多个全局位线，并且通过向所述电阻存储单元中的至少一个提供根据所述参考单元的电阻而变化的电流来执行读取操作。

    Nonvolatile memory device, storage system having the same, and method of driving the nonvolatile memory device
    9.
    发明授权
    Nonvolatile memory device, storage system having the same, and method of driving the nonvolatile memory device 有权
    非易失性存储器件，具有相同的存储系统以及驱动非易失性存储器件的方法

    公开(公告)号：US08050084B2

    公开(公告)日：2011-11-01

    申请号：US12893413

    申请日：2010-09-29

    申请人： Jun-Soo Bae ,  Kwang-Jin Lee ,  Beak-Hyung Cho

    发明人： Jun-Soo Bae ,  Kwang-Jin Lee ,  Beak-Hyung Cho

    IPC分类号： G11C11/00

    CPC分类号： G11C8/12 ,  G11C7/04 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/004 ,  G11C2013/0054 ,  G11C2211/5634

    摘要： A nonvolatile memory device includes a memory cell array including a plurality of nonvolatile memory cells each having a resistance corresponding to one of a plurality of first resistance distributions, a temperature compensation circuit including one or more reference cells each having a resistance corresponding to one among one or more second resistance distributions, and a data read circuit including a compensation unit and a sense amplifier, the compensation unit being adapted to supply compensation current to a sensing node, an amount of the compensation current varying based on the resistance of each reference cell, and the sense amplifier being adapted to compare the level of the sensing node with a reference level and to output a comparison result.

    摘要翻译： 非易失性存储器件包括存储单元阵列，其包括多个非易失性存储单元，每个非易失性存储单元具有对应于多个第一电阻分布之一的电阻，温度补偿电路包括一个或多个参考单元，每个参考单元具有对应于一个 或更多的第二电阻分布，以及包括补偿单元和读出放大器的数据读取电路，所述补偿单元适于向感测节点提供补偿电流，所述补偿电流的量基于每个参考单元的电阻而变化， 并且所述读出放大器适于将感测节点的电平与参考电平进行比较并输出比较结果。

    APPARATUS FOR CLEANING A MEMBRANE MODULE AND A METHOD THEREFOR
    10.
    发明申请
    APPARATUS FOR CLEANING A MEMBRANE MODULE AND A METHOD THEREFOR 审中-公开
    用于清洁膜模块的装置及其方法

    公开(公告)号：US20100192976A1

    公开(公告)日：2010-08-05

    申请号：US12669392

    申请日：2008-08-11

    申请人： Kwang-Jin Lee ,  Sung-Hak Choi ,  Moo-Seok Lee

    发明人： Kwang-Jin Lee ,  Sung-Hak Choi ,  Moo-Seok Lee

    IPC分类号： B08B7/04 ,  B08B3/00

    CPC分类号： B01D65/025 ,  B01D2321/02 ,  B01D2321/16

    摘要： Disclosed are an apparatus for cleaning a membrane module and a method therefor, which can minimize consumption of chemicals required to clean the membrane module while maximizing a recovery cleaning rate of the membrane module without completely stopping a water treatment operation. The cleaning apparatus includes a first flushing bath for flushing a membrane module transferred from a water treatment tank, and a first chemical cleaning bath for cleaning the membrane module, which has been completely flushed and transferred from the first flushing bath, by use of a first chemical solution.

    摘要翻译： 公开了一种用于清洁膜组件的设备及其方法，其可以最大限度地提高膜组件的回收清洁率而不会完全停止水处理操作来最小化清洁膜组件所需的化学品的消耗。 清洗装置包括用于冲洗从水处理槽传送的膜组件的第一冲洗槽和用于清洗已经被完全冲洗并从第一冲洗槽传送的膜组件的第一化学清洗槽， 化学溶液。