公开(公告)号：US20060287208A1

公开(公告)日：2006-12-21

申请号：US11467736

申请日：2006-08-28

申请人： Kwang-Wook Lee ,  In-Seak Hwang ,  Keum-Joo Lee ,  Chang-Lyong Song ,  Yong-Sun Ko ,  Kui-Jong Baek ,  Woong Han

发明人： Kwang-Wook Lee ,  In-Seak Hwang ,  Keum-Joo Lee ,  Chang-Lyong Song ,  Yong-Sun Ko ,  Kui-Jong Baek ,  Woong Han

IPC分类号： C11D7/32

CPC分类号： H01L21/02071 ,  C11D3/0084 ,  C11D7/3281 ,  C11D11/0047 ,  C23G1/106

摘要： A corrosion-inhibiting cleaning composition for semiconductor wafer processing includes hydrogen peroxide at a concentration in a range from about 0.5 wt % to about 5 wt %, sulfuric acid at a concentration in a range from about 1 wt % to about 10 wt %, hydrogen fluoride at a concentration in a range from about 0.01 wt % to about 1 wt %; an azole at a concentration in a range from about 0.1 wt % to about 5 wt % and deionized water. The azole operates to inhibit corrosion of a metal layer being cleaned by chelating with a surface of the metal layer during a cleaning process.

摘要翻译： 用于半导体晶片处理的腐蚀抑制清洁组合物包括浓度在约0.5重量％至约5重量％范围内的浓度在约1重量％至约10重量％范围内的硫酸，氢气 浓度在约0.01重量％至约1重量％范围内的氟化物; 浓度在约0.1重量％至约5重量％范围内的唑类和去离子水。 在清洁过程中，唑类用于通过与金属层的表面螯合来抑制被清洁的金属层的腐蚀。

公开(公告)号：US20080214006A1

公开(公告)日：2008-09-04

申请号：US12122264

申请日：2008-05-16

申请人： Kwang-Wook Lee ,  In-Seak Hwang ,  Yong-Sun Ko ,  Byoung-Moon Yoon ,  Kyung-Hyun Kim ,  Ky-Sub Kim ,  Sun-Young Song ,  Hyuk-Jin Lee ,  Byung-Mook Kim

发明人： Kwang-Wook Lee ,  In-Seak Hwang ,  Yong-Sun Ko ,  Byoung-Moon Yoon ,  Kyung-Hyun Kim ,  Ky-Sub Kim ,  Sun-Young Song ,  Hyuk-Jin Lee ,  Byung-Mook Kim

IPC分类号： H01L21/461 ,  G03C1/00

CPC分类号： H01L21/02071 ,  C11D3/0073 ,  C11D3/042 ,  C11D3/046 ,  C11D3/2082 ,  C11D3/30 ,  C11D3/364 ,  C11D3/39 ,  C11D3/3947 ,  C11D11/0047 ,  C23G1/106

摘要： Provided herein are methods for using corrosion-inhibiting cleaning compositions for semiconductor wafer processing that include an aqueous admixture of at least water, a surfactant and a corrosion-inhibiting compound selected from a group consisting of amino phosphonates, polyamines and polycarboxylic acids. The quantity of the corrosion-inhibiting compound in the admixture is preferably in a range from about 0.0001 wt % to about 0.1 wt % and the quantity of the surfactant is preferably in a range from about 0.001 wt % to about 1.0 wt %. The aqueous admixture may also include sulfuric acid and a fluoride, which act as oxide etchants, and a peroxide, which acts as a metal etchant.

摘要翻译： 本文提供了使用用于半导体晶片加工的腐蚀抑制清洁组合物的方法，其包括至少水，表面活性剂和选自氨基膦酸盐，多胺和多元羧酸的腐蚀抑制化合物的水性混合物。 混合物中腐蚀抑制化合物的量优选在约0.0001重量％至约0.1重量％的范围内，表面活性剂的量优选在约0.001重量％至约1.0重量％的范围内。 水性混合物还可以包括作为氧化物蚀刻剂的硫酸和氟化物，以及充当金属蚀刻剂的过氧化物。

公开(公告)号：US06889447B2

公开(公告)日：2005-05-10

申请号：US10464639

申请日：2003-06-19

申请人： Kwang-Wook Lee ,  Yong-Sun Ko ,  In-Seak Hwang

发明人： Kwang-Wook Lee ,  Yong-Sun Ko ,  In-Seak Hwang

IPC分类号： H01L21/304 ,  H01L21/00 ,  F26B5/04

CPC分类号： H01L21/67034

摘要： An instantaneous pressure reducing heating and drying apparatus for an object, such as a wafer, includes a pressure reducing chamber; a vacuum pump for reducing a pressure in the pressure reducing chamber to below atmospheric pressure; a drying chamber installed within the pressure reducing chamber for drying the object that is loaded in the drying chamber; a pressure regulating valve installed in a wall of the drying chamber, wherein when the pressure regulating valve is opened a pressure in the drying chamber is instantaneously reduced to the pressure of the pressure reducing chamber; and a heating means for heating the drying chamber. In operation, the vacuum pump reduces a pressure of the pressure reducing chamber to below atmospheric pressure, and the pressure regulating valve installed in a wall of the drying chamber opens thereby instantaneously reducing the pressure the drying chamber to the reduced pressure of the pressure reducing chamber.

摘要翻译： 用于物体（例如晶片）的瞬时减压加热和干燥装置包括减压室; 用于将减压室中的压力降低至大气压的真空泵; 安装在所述减压室内的用于干燥装载在所述干燥室中的物体的干燥室; 安装在所述干燥室的壁中的压力调节阀，其中当所述压力调节阀打开时，所述干燥室中的压力立即降低到所述减压室的压力; 以及用于加热干燥室的加热装置。 在操作中，真空泵将减压室的压力降低至低于大气压，并且安装在干燥室的壁中的调压阀打开，从而瞬间将干燥室的压力降低到减压室的减压 。

公开(公告)号：US07361547B2

公开(公告)日：2008-04-22

申请号：US11024981

申请日：2004-12-30

申请人： Kwang Wook Lee ,  In-Seak Hwang ,  Yong-Sun Ko ,  Ki-Hyun Hwang

发明人： Kwang Wook Lee ,  In-Seak Hwang ,  Yong-Sun Ko ,  Ki-Hyun Hwang

IPC分类号： H01L21/8242

CPC分类号： H01L28/84 ,  H01L27/10852 ,  H01L28/91

摘要： A method for forming a capacitor for use in a semiconductor device having electrode plugs surrounded by an insulating film and connected to underlying contact pads, includes sequentially forming an etch stop film and a mold oxide film on the insulating film and the electrode plugs, forming recesses in portions of the mold oxide film and the etching stopper film, the recesses exposing the electrode plugs, forming storage node electrodes in the recesses, filling the recesses in which the storage node electrodes are formed with an artificial oxide film, planarizing the storage node electrodes and the artificial oxide film so that the storage node electrodes are separated from one another, and selectively removing the mold oxide film and the artificial oxide film using a diluted hydrofluoric acid solution containing substantially no ammonium bifluoride.

摘要翻译： 一种用于形成用于半导体器件的电容器的方法，所述半导体器件具有由绝缘膜包围并连接到下面的接触焊盘的电极塞，包括在所述绝缘膜和所述电极插塞上顺序地形成蚀刻停止膜和模制氧化物膜， 在模具氧化膜和蚀刻停止膜的部分中，露出电极塞的凹部，在凹部中形成存储节点电极，用存储节点电极填充形成有人造氧化膜的凹部，使存储节点电极平坦化 和人造氧化物膜，使得储存节点电极彼此分离，并且使用基本上不含氟化二氢铵的稀释的氢氟酸溶液选择性地除去模制氧化物膜和人造氧化物膜。

公开(公告)号：US20050176604A1

公开(公告)日：2005-08-11

申请号：US11021040

申请日：2004-12-23

申请人： Kwang-Wook Lee ,  In-Seak Hwang ,  Yong-Sun Ko ,  Byoung-Moon Yoon ,  Kyung-Hyun Kim ,  Ky-Sub Kim ,  Sun-Young Song ,  Hyuk-Jin Lee ,  Byung-Mook Kim

发明人： Kwang-Wook Lee ,  In-Seak Hwang ,  Yong-Sun Ko ,  Byoung-Moon Yoon ,  Kyung-Hyun Kim ,  Ky-Sub Kim ,  Sun-Young Song ,  Hyuk-Jin Lee ,  Byung-Mook Kim

IPC分类号： C11D1/722 ,  C09K13/04 ,  C09K13/08 ,  C11D1/00 ,  C11D3/02 ,  C11D3/04 ,  C11D3/20 ,  C11D3/30 ,  C11D3/36 ,  C11D3/39 ,  C11D11/00 ,  C11D17/08 ,  C23G5/036 ,  H01L21/02 ,  H01L21/28 ,  H01L21/30 ,  H01L21/302 ,  H01L21/304 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/82 ,  H01L21/8239 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/78

CPC分类号： H01L21/02071 ,  C11D3/0073 ,  C11D3/042 ,  C11D3/046 ,  C11D3/2082 ,  C11D3/30 ,  C11D3/364 ,  C11D3/39 ,  C11D3/3947 ,  C11D11/0047 ,  C23G1/106

摘要： A corrosion-inhibiting cleaning composition for semiconductor wafer processing includes an aqueous admixture of at least water, a surfactant and a corrosion-inhibiting compound selected from a group consisting of amino phosphonates, polyamines and polycarboxylic acids. The quantity of the corrosion-inhibiting compound in the admixture is preferably in a range from about 0.0001 wt % to about 0.1 wt % and the quantity of the surfactant is preferably in a range from about 0.001 wt % to about 1.0 wt %. The aqueous admixture may also include sulfuric acid and a fluoride, which act as oxide etchants, and a peroxide, which acts as a metal etchant.

摘要翻译： 用于半导体晶片处理的腐蚀抑制清洁组合物包括至少水，表面活性剂和选自氨基膦酸盐，多胺和多元羧酸的腐蚀抑制化合物的水性混合物。 混合物中腐蚀抑制化合物的量优选在约0.0001重量％至约0.1重量％的范围内，表面活性剂的量优选在约0.001重量％至约1.0重量％的范围内。 水性混合物还可以包括作为氧化物蚀刻剂的硫酸和氟化物，以及充当金属蚀刻剂的过氧化物。

公开(公告)号：US20050261151A1

公开(公告)日：2005-11-24

申请号：US11030258

申请日：2005-01-06

申请人： Kwang-Wook Lee ,  In-Seak Hwang ,  Keum-Joo Lee ,  Chang-Lyong Song ,  Yong-Sun Ko ,  Kui-Jong Baek ,  Woong Han

发明人： Kwang-Wook Lee ,  In-Seak Hwang ,  Keum-Joo Lee ,  Chang-Lyong Song ,  Yong-Sun Ko ,  Kui-Jong Baek ,  Woong Han

IPC分类号： C11D7/08 ,  C11D1/00 ,  C11D3/02 ,  C11D7/10 ,  C11D7/18 ,  C11D7/32 ,  C11D7/34 ,  C11D7/36 ,  C11D11/00 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/321 ,  H01L21/768

CPC分类号： H01L21/02071 ,  C11D3/0084 ,  C11D7/3281 ,  C11D11/0047 ,  C23G1/106

摘要： A corrosion-inhibiting cleaning composition for semiconductor wafer processing includes hydrogen peroxide at a concentration in a range from about 0.5 wt % to about 5 wt %, sulfuric acid at a concentration in a range from about 1 wt % to about 10 wt %, hydrogen fluoride at a concentration in a range from about 0.01 wt % to about 1 wt %; an azole at a concentration in a range from about 0.1 wt % to about 5 wt % and deionized water. The azole operates to inhibit corrosion of a metal layer being cleaned by chelating with a surface of the metal layer during a cleaning process.

摘要翻译： 用于半导体晶片处理的腐蚀抑制清洁组合物包括浓度在约0.5重量％至约5重量％范围内的浓度在约1重量％至约10重量％范围内的硫酸，氢气 浓度在约0.01重量％至约1重量％范围内的氟化物; 浓度在约0.1重量％至约5重量％范围内的唑类和去离子水。 在清洁过程中，唑类用于通过与金属层的表面螯合来抑制被清洁的金属层的腐蚀。

公开(公告)号：US20050139233A1

公开(公告)日：2005-06-30

申请号：US11070645

申请日：2005-03-02

申请人： Kwang-Wook Lee ,  Dae-Hyuk Chung ,  In-Seak Hwang ,  Yong-Sun Ko

发明人： Kwang-Wook Lee ,  Dae-Hyuk Chung ,  In-Seak Hwang ,  Yong-Sun Ko

IPC分类号： H01L21/304 ,  C09D9/00 ,  C11D3/39 ,  C11D7/08 ,  C11D7/50 ,  C11D11/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213 ,  C23G1/02 ,  H01L21/302 ,  H01L21/461 ,  H01L21/4763

CPC分类号： H01L21/02071 ,  C09D9/00 ,  C11D3/3947 ,  C11D7/08 ,  C11D7/5018 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/31133

摘要： In a cleaning solution and a method of cleaning a semiconductor substrate, the cleaning solution includes about 1 to about 10 percent by weight of sulfuric acid, about 0.5 to about 5 percent by weight of aqueous hydrogen peroxide solution, and about 85 to about 98.5 percent by weight of hydrogen fluoric acid solution. Various polymers attached to a metal wiring formed on a substrate are removed by immersing the substrate into the cleaning solution. The substrate is rinsed to remove the cleaning solution remaining on the substrate. Thus, the polymers can be completely removed without damage to the metal wiring and an underlying oxide film.

摘要翻译： 在清洁溶液和清洁半导体衬底的方法中，清洁溶液包括约1至约10重量％的硫酸，约0.5至约5重量％的过氧化氢水溶液和约85至约98.5重量％ 的氢氟酸溶液。 通过将基板浸入清洁溶液中，除去附着在形成在基板上的金属布线的各种聚合物。 冲洗衬底以除去留在衬底上的清洁溶液。 因此，可以完全去除聚合物而不损坏金属布线和下面的氧化膜。

公开(公告)号：US06875706B2

公开(公告)日：2005-04-05

申请号：US10671245

申请日：2003-09-24

申请人： Kwang-Wook Lee ,  Dae-Hyuk Chung ,  In-Seak Hwang ,  Yong-Sun Ko

发明人： Kwang-Wook Lee ,  Dae-Hyuk Chung ,  In-Seak Hwang ,  Yong-Sun Ko

IPC分类号： H01L21/304 ,  C09D9/00 ,  C11D3/39 ,  C11D7/08 ,  C11D7/50 ,  C11D11/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/30

CPC分类号： H01L21/02071 ,  C09D9/00 ,  C11D3/3947 ,  C11D7/08 ,  C11D7/5018 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/31133

摘要： In a cleaning solution and a method of cleaning a semiconductor substrate, the cleaning solution includes about 1 to about 10 percent by weight of sulfuric acid, about 0.5 to about 5 percent by weight of aqueous hydrogen peroxide solution, and about 85 to about 98.5 percent by weight of hydrogen fluoric acid solution. Various polymers attached to a metal wiring formed on a substrate are removed by immersing the substrate into the cleaning solution. The substrate is rinsed to remove the cleaning solution remaining on the substrate. Thus, the polymers can be completely removed without damage to the metal wiring and an underlying oxide film.

公开(公告)号：US06838330B2

公开(公告)日：2005-01-04

申请号：US10445843

申请日：2003-05-28

申请人： Bong-Ho Moon ,  Ju-Yun Cheol ,  Yong-Sun Ko ,  In-Seak Hwang

发明人： Bong-Ho Moon ,  Ju-Yun Cheol ,  Yong-Sun Ko ,  In-Seak Hwang

IPC分类号： H01L21/768 ,  H01L21/60 ,  H01L21/8238

CPC分类号： H01L21/02063 ,  H01L21/76897

摘要： A method of forming a contact hole of a semiconductor device that is able to prevent excessive etching of an interlayer dielectric pattern includes forming a gate pattern including a first insulation layer pattern, a conductive layer pattern, a capping insulation layer pattern, and a second insulation layer pattern on a substrate; forming a spacer using an insulating material on a sidewall of the gate pattern; forming an interlayer dielectric on the substrate on which the gate pattern and the spacer are formed; forming a contact hole and an interlayer dielectric pattern for exposing the substrate by etching the interlayer dielectric; forming a liner spacer on a sidewall of the spacer and the interlayer dielectric pattern; and cleaning the resultant structure using a cleaning solution. The cleaning solution preferably includes includes ozone water and hydrogen fluoride (HF).

摘要翻译： 形成能够防止层间电介质图案的过度蚀刻的半导体器件的接触孔的方法包括形成包括第一绝缘层图案，导电层图案，封盖绝缘层图案和第二绝缘体的栅极图案 层图案; 在所述栅极图案的侧壁上使用绝缘材料形成间隔物; 在其上形成有栅极图案和间隔物的基板上形成层间电介质; 形成用于通过蚀刻所述层间电介质来暴露所述衬底的接触孔和层间电介质图案; 在间隔物的侧壁和层间介质图案上形成衬垫; 并使用清洁溶液清洗所得到的结构。 清洗液最好包括臭氧水和氟化氢（HF）。

公开(公告)号：US07338610B2

公开(公告)日：2008-03-04

申请号：US10763356

申请日：2004-01-23

申请人： Won-Jun Lee ,  Byoung-Moon Yoon ,  In-Seak Hwang ,  Yong-Sun Ko

发明人： Won-Jun Lee ,  Byoung-Moon Yoon ,  In-Seak Hwang ,  Yong-Sun Ko

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L28/91 ,  H01L21/31111

摘要： A wafer having a dielectric layer and an electrode partially protruding from the top surface of the dielectric layer is provided. The dielectric layer is etched with a chemical solution such as LAL. Prior to etching, the protruding portion of the electrode is removed or reduced to prevent any bubbles included in the chemical solution from adhering to the electrode. Thus, the chemical solution can etch the dielectric layers without being blocked by any bubbles included in a chemical solution.

摘要翻译： 提供具有电介质层和从电介质层的顶表面部分突出的电极的晶片。 用诸如LAL的化学溶液蚀刻电介质层。 在蚀刻之前，电极的突出部分被去除或减少，以防止化学溶液中包含的任何气泡粘附到电极上。 因此，化学溶液可以蚀刻介电层而不被包含在化学溶液中的任何气泡所阻挡。