公开(公告)号：US07338610B2

公开(公告)日：2008-03-04

申请号：US10763356

申请日：2004-01-23

申请人： Won-Jun Lee ,  Byoung-Moon Yoon ,  In-Seak Hwang ,  Yong-Sun Ko

发明人： Won-Jun Lee ,  Byoung-Moon Yoon ,  In-Seak Hwang ,  Yong-Sun Ko

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L28/91 ,  H01L21/31111

摘要： A wafer having a dielectric layer and an electrode partially protruding from the top surface of the dielectric layer is provided. The dielectric layer is etched with a chemical solution such as LAL. Prior to etching, the protruding portion of the electrode is removed or reduced to prevent any bubbles included in the chemical solution from adhering to the electrode. Thus, the chemical solution can etch the dielectric layers without being blocked by any bubbles included in a chemical solution.

摘要翻译： 提供具有电介质层和从电介质层的顶表面部分突出的电极的晶片。 用诸如LAL的化学溶液蚀刻电介质层。 在蚀刻之前，电极的突出部分被去除或减少，以防止化学溶液中包含的任何气泡粘附到电极上。 因此，化学溶液可以蚀刻介电层而不被包含在化学溶液中的任何气泡所阻挡。

公开(公告)号：US20050064674A1

公开(公告)日：2005-03-24

申请号：US10763356

申请日：2004-01-23

申请人： Won-Jun Lee ,  Byoung -Moon Yoon ,  In-Seak Hwang ,  Yong-Sun Ko

发明人： Won-Jun Lee ,  Byoung -Moon Yoon ,  In-Seak Hwang ,  Yong-Sun Ko

IPC分类号： H01L27/108 ,  H01L21/02 ,  H01L21/311 ,  H01L21/20 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L28/91 ,  H01L21/31111

摘要： A wafer having a dielectric layer and an electrode partially protruding from the top surface of the dielectric layer is provided. The dielectric layer is etched with a chemical solution such as LAL. Prior to etching, the protruding portion of the electrode is removed or reduced to prevent any bubbles included in the chemical solution from adhering to the electrode. Thus, the chemical solution can etch the dielectric layers without being blocked by any bubbles included in a chemical solution.

摘要翻译： 提供具有电介质层和从电介质层的顶表面部分突出的电极的晶片。 用诸如LAL的化学溶液蚀刻电介质层。 在蚀刻之前，电极的突出部分被去除或减少，以防止化学溶液中包含的任何气泡粘附到电极上。 因此，化学溶液可以蚀刻介电层而不被包含在化学溶液中的任何气泡所阻挡。

公开(公告)号：US20050026452A1

公开(公告)日：2005-02-03

申请号：US10855313

申请日：2004-05-26

申请人： Won-Jun Lee ,  Byoung-Moon Yoon ,  In-Seak Hwang ,  Yong-Sun Ko

发明人： Won-Jun Lee ,  Byoung-Moon Yoon ,  In-Seak Hwang ,  Yong-Sun Ko

IPC分类号： H01L21/02 ,  H01L21/311 ,  H01L21/8242 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L28/91 ,  H01L21/31111 ,  H01L27/10852

摘要： A wafer having a dielectric layer and an electrode partially protruding from the top surface of the dielectric layer is provided. An etchant or chemical solution is applied to the dielectric layer and bubbles in the etchant are prevented from adhering to the electrode. In one embodiment, prior to etching, the protruding portion is covered with a buffer layer to prevent bubbles in the etchant from adhering to the electrode. Thus, the etchant can etch the dielectric layers without being blocked by bubbles included therein.

摘要翻译： 提供具有电介质层和从电介质层的顶表面部分突出的电极的晶片。 将蚀刻剂或化学溶液施加到电介质层，并且防止蚀刻剂中的气泡粘附到电极上。 在一个实施例中，在蚀刻之前，突出部分被缓冲层覆盖，以防止蚀刻剂中的气泡粘附到电极上。 因此，蚀刻剂可以蚀刻电介质层而不被其中包含的气泡阻挡。

公开(公告)号：US20050023634A1

公开(公告)日：2005-02-03

申请号：US10862336

申请日：2004-06-08

申请人： Byoung-Moon Yoon ,  Min-Jin Lee ,  Yong-Sun Ko ,  In-Seak Hwang ,  Won-Jun Lee

发明人： Byoung-Moon Yoon ,  Min-Jin Lee ,  Yong-Sun Ko ,  In-Seak Hwang ,  Won-Jun Lee

IPC分类号： H01L21/762 ,  H01L21/763 ,  H01L21/76 ,  H01L29/00

CPC分类号： H01L21/763 ,  H01L21/76224

摘要： Provided is a method of fabricating a shallow trench isolation (STI) structure having a high aspect ratio and improved insulating properties. The exemplary method includes filling a shallow trench isolation region opening with an undoped polysilicon layer, removing an upper portion of the undoped polysilicon layer to form a second opening having a reduced aspect ratio relative to the original opening and filling the second opening with an insulating material to complete the STI structure. Additional protective layers including silicon oxide, silicon nitride and/or a capping layer may be provided on the sidewalls of the opening before depositing the undoped polysilicon.

摘要翻译： 提供一种制造具有高纵横比和改进的绝缘性能的浅沟槽隔离（STI）结构的方法。 该示例性方法包括填充具有未掺杂多晶硅层的浅沟槽隔离区开口，去除未掺杂多晶硅层的上部，以形成相对于原始开口具有减小的纵横比的第二开口，并用绝缘材料填充第二开口 完成STI结构。 在沉积未掺杂的多晶硅之前，可以在开口的侧壁上提供包括氧化硅，氮化硅和/或覆盖层的附加保护层。

公开(公告)号：US20080214006A1

公开(公告)日：2008-09-04

申请号：US12122264

申请日：2008-05-16

申请人： Kwang-Wook Lee ,  In-Seak Hwang ,  Yong-Sun Ko ,  Byoung-Moon Yoon ,  Kyung-Hyun Kim ,  Ky-Sub Kim ,  Sun-Young Song ,  Hyuk-Jin Lee ,  Byung-Mook Kim

发明人： Kwang-Wook Lee ,  In-Seak Hwang ,  Yong-Sun Ko ,  Byoung-Moon Yoon ,  Kyung-Hyun Kim ,  Ky-Sub Kim ,  Sun-Young Song ,  Hyuk-Jin Lee ,  Byung-Mook Kim

IPC分类号： H01L21/461 ,  G03C1/00

CPC分类号： H01L21/02071 ,  C11D3/0073 ,  C11D3/042 ,  C11D3/046 ,  C11D3/2082 ,  C11D3/30 ,  C11D3/364 ,  C11D3/39 ,  C11D3/3947 ,  C11D11/0047 ,  C23G1/106

摘要： Provided herein are methods for using corrosion-inhibiting cleaning compositions for semiconductor wafer processing that include an aqueous admixture of at least water, a surfactant and a corrosion-inhibiting compound selected from a group consisting of amino phosphonates, polyamines and polycarboxylic acids. The quantity of the corrosion-inhibiting compound in the admixture is preferably in a range from about 0.0001 wt % to about 0.1 wt % and the quantity of the surfactant is preferably in a range from about 0.001 wt % to about 1.0 wt %. The aqueous admixture may also include sulfuric acid and a fluoride, which act as oxide etchants, and a peroxide, which acts as a metal etchant.

摘要翻译： 本文提供了使用用于半导体晶片加工的腐蚀抑制清洁组合物的方法，其包括至少水，表面活性剂和选自氨基膦酸盐，多胺和多元羧酸的腐蚀抑制化合物的水性混合物。 混合物中腐蚀抑制化合物的量优选在约0.0001重量％至约0.1重量％的范围内，表面活性剂的量优选在约0.001重量％至约1.0重量％的范围内。 水性混合物还可以包括作为氧化物蚀刻剂的硫酸和氟化物，以及充当金属蚀刻剂的过氧化物。

公开(公告)号：US06831012B2

公开(公告)日：2004-12-14

申请号：US10445858

申请日：2003-05-28

申请人： Dae-Keun Kang ,  Yong-Sun Ko ,  In-Seak Hwang ,  Byoung-Moon Yoon

发明人： Dae-Keun Kang ,  Yong-Sun Ko ,  In-Seak Hwang ,  Byoung-Moon Yoon

IPC分类号： H01L2144

CPC分类号： H01L21/823443 ,  H01L21/02063 ,  H01L21/31111 ,  H01L21/823425 ,  H01L27/10888 ,  H01L27/10891 ,  H01L27/10894 ,  H01L29/665

摘要： After a silicidation blocking pattern is formed on a substrate including silicon, the silicidation blocking pattern is hardened by a thermal annealing process. The substrate is rinsed to remove a native oxide film formed on the substrate, and then a silicide film is formed on a portion of the substrate exposed by the silicidation blocking pattern. The silicide film can thus be formed in an exact portion of the substrate, and the substrate is not damaged during rinsing.

摘要翻译： 在包含硅的衬底上形成硅化阻挡图案之后，通过热退火工艺使硅化阻挡图案硬化。 冲洗衬底以去除在衬底上形成的自然氧化膜，然后在通过硅化阻挡图案暴露的衬底的一部分上形成硅化物膜。 因此，硅化物膜可以形成在衬底的精确部分中，并且衬底在漂洗期间不被损坏。

公开(公告)号：US20050176604A1

公开(公告)日：2005-08-11

申请号：US11021040

申请日：2004-12-23

申请人： Kwang-Wook Lee ,  In-Seak Hwang ,  Yong-Sun Ko ,  Byoung-Moon Yoon ,  Kyung-Hyun Kim ,  Ky-Sub Kim ,  Sun-Young Song ,  Hyuk-Jin Lee ,  Byung-Mook Kim

发明人： Kwang-Wook Lee ,  In-Seak Hwang ,  Yong-Sun Ko ,  Byoung-Moon Yoon ,  Kyung-Hyun Kim ,  Ky-Sub Kim ,  Sun-Young Song ,  Hyuk-Jin Lee ,  Byung-Mook Kim

IPC分类号： C11D1/722 ,  C09K13/04 ,  C09K13/08 ,  C11D1/00 ,  C11D3/02 ,  C11D3/04 ,  C11D3/20 ,  C11D3/30 ,  C11D3/36 ,  C11D3/39 ,  C11D11/00 ,  C11D17/08 ,  C23G5/036 ,  H01L21/02 ,  H01L21/28 ,  H01L21/30 ,  H01L21/302 ,  H01L21/304 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/82 ,  H01L21/8239 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/78

CPC分类号： H01L21/02071 ,  C11D3/0073 ,  C11D3/042 ,  C11D3/046 ,  C11D3/2082 ,  C11D3/30 ,  C11D3/364 ,  C11D3/39 ,  C11D3/3947 ,  C11D11/0047 ,  C23G1/106

摘要： A corrosion-inhibiting cleaning composition for semiconductor wafer processing includes an aqueous admixture of at least water, a surfactant and a corrosion-inhibiting compound selected from a group consisting of amino phosphonates, polyamines and polycarboxylic acids. The quantity of the corrosion-inhibiting compound in the admixture is preferably in a range from about 0.0001 wt % to about 0.1 wt % and the quantity of the surfactant is preferably in a range from about 0.001 wt % to about 1.0 wt %. The aqueous admixture may also include sulfuric acid and a fluoride, which act as oxide etchants, and a peroxide, which acts as a metal etchant.

摘要翻译： 用于半导体晶片处理的腐蚀抑制清洁组合物包括至少水，表面活性剂和选自氨基膦酸盐，多胺和多元羧酸的腐蚀抑制化合物的水性混合物。 混合物中腐蚀抑制化合物的量优选在约0.0001重量％至约0.1重量％的范围内，表面活性剂的量优选在约0.001重量％至约1.0重量％的范围内。 水性混合物还可以包括作为氧化物蚀刻剂的硫酸和氟化物，以及充当金属蚀刻剂的过氧化物。

公开(公告)号：US06946431B2

公开(公告)日：2005-09-20

申请号：US10655421

申请日：2003-09-04

申请人： In-Joon Yeo ,  Yong-Sun Ko ,  In-Seak Hwang ,  Byoung-Moon Yoon ,  Dae-Hyuk Chung ,  Kyung-Hyun Kim

发明人： In-Joon Yeo ,  Yong-Sun Ko ,  In-Seak Hwang ,  Byoung-Moon Yoon ,  Dae-Hyuk Chung ,  Kyung-Hyun Kim

IPC分类号： H01L21/304 ,  C11D7/06 ,  C11D7/26 ,  C11D11/00 ,  H01L21/302

CPC分类号： C11D11/0047 ,  C11D7/06 ,  C11D7/265

摘要： Cleaning solutions for integrated circuit devices and methods of cleaning integrated circuit devices using the same are disclosed. The cleaning solution includes about 30% aqueous ammonia solution, acetic acid by a volume percent higher then a volume percent of the aqueous ammonia solution, and deionized water by a volume percent higher then the volume percent of the acetic acid. Additionally, disclosed are methods wherein the cleaning solution is formed on integrated circuit substrates having an exposed metal pattern formed thereon, and further providing mega-sonic energy to the film of the cleaning solution.

摘要翻译： 公开了用于集成电路器件的清洁解决方案和使用其的集成电路器件的清洁方法。 清洗溶液包括约30％氨水溶液，乙酸的体积百分数高于氨水溶液的体积百分比，去离子水的体积百分数高于乙酸的体积百分数。 此外，公开了一种方法，其中清洁溶液形成在其上形成有暴露的金属图案的集成电路基板上，并且还向清洗溶液的膜提供大的声能。

公开(公告)号：US20050079682A1

公开(公告)日：2005-04-14

申请号：US10961908

申请日：2004-10-08

申请人： Mi-Jin Lee ,  Won-Jun Lee ,  In-Seak Hwang ,  Byoung-Moon Yoon

发明人： Mi-Jin Lee ,  Won-Jun Lee ,  In-Seak Hwang ,  Byoung-Moon Yoon

IPC分类号： H01L21/76 ,  H01L21/762

CPC分类号： H01L21/76232

摘要： Provided is a method of manufacturing a shallow trench isolation (STI) film without voids or added processes. In one embodiment, the method of manufacturing an STI film includes forming a pad oxide pattern film and a silicon nitride film pattern, which define an isolation region, on a semiconductor substrate, and forming a trench by etching the semiconductor substrate to a predetermined depth using the pad oxide film pattern and the silicon nitride film pattern as masks. The resultant semiconductor substrate having the trench may be then dipped in a chemical solution containing ozone to pullback side walls of the silicon nitride film pattern. Afterward, the STI film can be formed by filling the trench with an insulating film.

摘要翻译： 提供了一种制造没有空隙或附加工艺的浅沟槽隔离（STI）膜的方法。 在一个实施例中，制造STI膜的方法包括在半导体衬底上形成限定隔离区的衬垫氧化物图案膜和氮化硅膜图案，并且通过使用以下方式将半导体衬底蚀刻到预定深度来形成沟槽 衬垫氧化膜图案和氮化硅膜图案作为掩模。 然后将具有沟槽的所得半导体衬底浸入含有臭氧的化学溶液中以拉回氮化硅膜图案的侧壁。 之后，可以通过用绝缘膜填充沟槽来形成STI膜。

公开(公告)号：US20050028842A1

公开(公告)日：2005-02-10

申请号：US10882008

申请日：2004-06-29

申请人： Tae-Hyun Kim ,  Kyung-Hyun Kim ,  Byoung-Moon Yoon ,  In-Seak Hwang

发明人： Tae-Hyun Kim ,  Kyung-Hyun Kim ,  Byoung-Moon Yoon ,  In-Seak Hwang

IPC分类号： H01L21/304 ,  B08B3/04 ,  H01L21/00 ,  B08B3/00

CPC分类号： H01L21/67057 ,  B08B3/04 ,  H01L21/67028

摘要： In one embodiment, an apparatus includes a cleaning bath for containing a cleaning solution, one or more substrate holders configured to support the substrate in the cleaning solution, means for removing the substrate from the cleaning solution, and means for releasing the one or more substrate holders from the substrate while the one or more substrate holders are immersed in the cleaning solution. Therefore, the formation of water spots or chemical stains on a substrate can be prevented.

摘要翻译： 在一个实施例中，一种装置包括用于容纳清洁溶液的清洗槽，被构造成将清洁溶液中的基材支撑的一个或多个衬底保持器，用于从清洁溶液中移除衬底的装置，以及用于释放一个或多个衬底 将一个或多个基板保持件浸入清洁溶液中的同时从基板保持。 因此，可以防止在基板上形成水斑或化学污渍。