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    METHODS OF REMOVING A MATERIAL LAYER FROM A SUBSTRATE USING WATER VAPOR TREATMENT
    2.
    发明申请
    METHODS OF REMOVING A MATERIAL LAYER FROM A SUBSTRATE USING WATER VAPOR TREATMENT 有权
    使用水蒸气处理从基板上移除材料层的方法

    公开(公告)号：US20120285481A1

    公开(公告)日：2012-11-15

    申请号：US13291286

    申请日：2011-11-08

    申请人： Kwangduk Douglas Lee ,  Sudha Rathi ,  Chiu Chan ,  Martin J. Seamons ,  Bok Heon Kim

    发明人： Kwangduk Douglas Lee ,  Sudha Rathi ,  Chiu Chan ,  Martin J. Seamons ,  Bok Heon Kim

    IPC分类号： B08B6/00 ,  B08B7/04 ,  B08B5/00

    CPC分类号： H01L21/6704 ,  C23C16/0245 ,  H01L21/02063 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/76814

    摘要： Embodiments of the invention generally relate to methods of removing and/or cleaning a substrate surface having different material layers disposed thereon using water vapor plasma treatment. In one embodiment, a method for cleaning a surface of a substrate includes positioning a substrate into a processing chamber, the substrate having a dielectric layer disposed thereon forming openings on the substrate, exposing the dielectric layer disposed on the substrate to water vapor supplied into the chamber to form a plasma in the water vapor, maintaining a process pressure in the chamber at between about 1 Torr and about 120 Torr, and cleaning the contact structure formed on the substrate.

    摘要翻译： 本发明的实施方案一般涉及使用水蒸气等离子体处理去除和/或清洁其上设置有不同材料层的衬底表面的方法。 在一个实施例中，一种用于清洁衬底的表面的方法包括将衬底定位到处理室中，所述衬底具有设置在其上的电介质层，在衬底上形成开口，将设置在衬底上的电介质层暴露于供应到衬底 在水蒸气中形成等离子体，将腔室中的处理压力保持在约1托至约120托之间，并清洁形成在基底上的接触结构。

    PLANARIZING ETCH HARDMASK TO INCREASE PATTERN DENSITY AND ASPECT RATIO
    3.
    发明申请
    PLANARIZING ETCH HARDMASK TO INCREASE PATTERN DENSITY AND ASPECT RATIO 失效

    公开(公告)号：US20110291243A1

    公开(公告)日：2011-12-01

    申请号：US12790203

    申请日：2010-05-28

    申请人： Martin Jay Seamons ,  Kwangduk Douglas Lee ,  Chiu Chan ,  Patrick Reilly ,  Sudha Rathi

    发明人： Martin Jay Seamons ,  Kwangduk Douglas Lee ,  Chiu Chan ,  Patrick Reilly ,  Sudha Rathi

    IPC分类号： H01L21/302 ,  H01L23/52 ,  G03F7/20 ,  H01L21/30

    CPC分类号： H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0337

    摘要： Methods for manufacturing a semiconductor device in a processing chamber are provided. In one embodiment, a method includes depositing over a substrate a first base material having a first set of interconnect features, filling an upper portion of the first set of interconnect features with an ashable material to an extent capable of protecting the first set of interconnect features from subsequent processes while being easily removable when desired, planarizing an upper surface of the first base material such that an upper surface of the ashable material filled in the first set of interconnect features is at the same level with the upper surface of the first base material, providing a substantial planar outer surface of the first base material, depositing a first film stack comprising a second base material on the substantial planar outer surface of the first base material, forming a second set of interconnect features in the second base material, wherein the second set of interconnect features are aligned with the first set of interconnect features, and removing the ashable material from the first base material, thereby extending a feature depth of the semiconductor device by connecting the second set of interconnect features to the first set of interconnect features. In another embodiment, a method includes providing a base material having a first film stack deposited thereon, wherein the base material is formed over the substrate and having a first set of interconnect features filled with an amorphous carbon material, the first film stack comprising a first amorphous carbon layer deposited on a surface of the base material, a first anti-reflective coating layer deposited on the first amorphous carbon layer, and a first photoresist layer deposited on the first anti-reflective coating layer, and patterning a portion of the first photoresist layer by shifting laterally a projection of a mask on the first photoresist layer relative to the substrate a desired distance, thereby introducing into the first photoresist layer a first feature pattern to be transferred to the underlying base material, wherein the first feature pattern is not aligned with the first set of interconnect features.

    ULTRA HIGH SELECTIVITY ASHABLE HARD MASK FILM
    4.
    发明申请
    ULTRA HIGH SELECTIVITY ASHABLE HARD MASK FILM 有权
    超高选择性的硬掩膜

    公开(公告)号：US20110287633A1

    公开(公告)日：2011-11-24

    申请号：US12784341

    申请日：2010-05-20

    申请人： Kwangduk Douglas Lee ,  Martin Jay Seamons ,  Sudha Rathi ,  Chiu Chan ,  Michael H. Lin

    发明人： Kwangduk Douglas Lee ,  Martin Jay Seamons ,  Sudha Rathi ,  Chiu Chan ,  Michael H. Lin

    IPC分类号： H01L21/3105 ,  H01L21/312

    CPC分类号： H01L21/02115 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/31144

    摘要： A method of forming an amorphous carbon layer on a substrate in a substrate processing chamber, includes introducing a hydrocarbon source into the processing chamber, introducing argon, alone or in combination with helium, hydrogen, nitrogen, and combinations thereof, into the processing chamber, wherein the argon has a volumetric flow rate to hydrocarbon source volumetric flow rate ratio of about 10:1 to about 20:1, generating a plasma in the processing chamber at a substantially lower pressure of about 2 Torr to 10 Torr, and forming a conformal amorphous carbon layer on the substrate.

    摘要翻译： 在基板处理室中的基板上形成无定形碳层的方法包括将烃源引入到处理室中，将氩单独或与氦，氢，氮及其组合单独或组合地引入到处理室中， 其中氩气具有约10:1至约20:1的烃源体积流量比的体积流速，在处理室中以约2托至10托的基本较低的压力产生等离子体，并形成保形 无定形碳层。

    Planarizing etch hardmask to increase pattern density and aspect ratio
    5.
    发明授权
    Planarizing etch hardmask to increase pattern density and aspect ratio 失效
    平铺蚀刻硬掩模以增加图案密度和纵横比

    公开(公告)号：US08513129B2

    公开(公告)日：2013-08-20

    申请号：US12790203

    申请日：2010-05-28

    申请人： Martin Jay Seamons ,  Kwangduk Douglas Lee ,  Chiu Chan ,  Patrick Reilly ,  Sudha Rathi

    发明人： Martin Jay Seamons ,  Kwangduk Douglas Lee ,  Chiu Chan ,  Patrick Reilly ,  Sudha Rathi

    IPC分类号： H01L21/311 ,  H01L23/58

    CPC分类号： H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0337

    摘要： Methods for manufacturing a semiconductor device are provided. In one embodiment, a method includes providing a base material having a first film stack deposited thereon, wherein the base material is formed over the substrate and has a first set of interconnect features. The first film stack comprises a first amorphous carbon layer deposited on a surface of the base material, a first anti-reflective coating layer deposited on the first amorphous carbon layer, and a first photoresist layer deposited on the first anti-reflective coating layer. The first photoresist layer is patterned by shifting laterally a projection of a mask on the first photoresist layer relative to the substrate a desired distance, thereby introducing into the first photoresist layer a first feature pattern to be transferred to the underlying base material, wherein the first feature pattern is not aligned with the first set of interconnect features.

    摘要翻译： 提供了制造半导体器件的方法。 在一个实施例中，一种方法包括提供具有沉积在其上的第一膜堆叠的基底材料，其中基底材料形成在衬底上并且具有第一组互连特征。 第一薄膜叠层包括沉积在基材表面上的第一非晶碳层，沉积在第一非晶碳层上的第一抗反射涂层和沉积在第一抗反射涂层上的第一光致抗蚀剂层。 通过在第一光致抗蚀剂层上相对于衬底的掩模的投影横向移动所需的距离来对第一光致抗蚀剂层进行构图，从而将第一特征图案引入第一光刻胶层以转移到下面的基底材料，其中第一 特征图案不与第一组互连特征对齐。

    Ultra high selectivity doped amorphous carbon strippable hardmask development and integration
    6.
    发明授权
    Ultra high selectivity doped amorphous carbon strippable hardmask development and integration 有权
    超高选择性掺杂无定形碳可剥离硬掩模开发和集成

    公开(公告)号：US08536065B2

    公开(公告)日：2013-09-17

    申请号：US13249794

    申请日：2011-09-30

    申请人： Martin Jay Seamons ,  Sudha Rathi ,  Kwangduk Douglas Lee ,  Deenesh Padhi ,  Bok Hoen Kim ,  Chiu Chan

    发明人： Martin Jay Seamons ,  Sudha Rathi ,  Kwangduk Douglas Lee ,  Deenesh Padhi ,  Bok Hoen Kim ,  Chiu Chan

    IPC分类号： H01L21/469

    CPC分类号： H01L21/64 ,  C23C16/0272 ,  C23C16/26 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/31144

    摘要： Embodiments of the present invention generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron containing amorphous carbon layer on a semiconductor substrate. In one embodiment, a method of processing a substrate in a processing chamber is provided. The method comprises providing a substrate in a processing volume, flowing a hydrocarbon containing gas mixture into the processing volume, generating a plasma of the hydrocarbon containing gas mixture by applying power from an RF source, flowing a boron containing gas mixture into the processing volume, and depositing a boron containing amorphous carbon film on the substrate in the presence of the plasma, wherein the boron containing amorphous carbon film contains from about 30 to about 60 atomic percentage of boron.

    摘要翻译： 本发明的实施例一般涉及集成电路的制造，特别涉及在半导体衬底上沉积含硼无定形碳层。 在一个实施例中，提供了一种在处理室中处理衬底的方法。 该方法包括在处理体积中提供衬底，使含烃气体混合物流入处理体积，通过从含有硼的气体混合物流入处理体积的RF源施加功率产生含烃气体混合物的等离子体， 以及在所述等离子体存在下在所述衬底上沉积含硼无定形碳膜，其中所述含硼无定形碳膜含有约30至约60原子百分比的硼。

    Ultra high selectivity ashable hard mask film
    7.
    发明授权
    Ultra high selectivity ashable hard mask film 有权
    超高选择性可硬化掩模膜

    公开(公告)号：US08361906B2

    公开(公告)日：2013-01-29

    申请号：US12784341

    申请日：2010-05-20

    申请人： Kwangduk Douglas Lee ,  Martin Jay Seamons ,  Sudha Rathi ,  Chiu Chan ,  Michael H. Lin

    发明人： Kwangduk Douglas Lee ,  Martin Jay Seamons ,  Sudha Rathi ,  Chiu Chan ,  Michael H. Lin

    IPC分类号： H01L21/302

    CPC分类号： H01L21/02115 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/31144

    摘要： A method of forming an amorphous carbon layer on a substrate in a substrate processing chamber, includes introducing a hydrocarbon source into the processing chamber, introducing argon, alone or in combination with helium, hydrogen, nitrogen, and combinations thereof, into the processing chamber, wherein the argon has a volumetric flow rate to hydrocarbon source volumetric flow rate ratio of about 10:1 to about 20:1, generating a plasma in the processing chamber at a substantially lower pressure of about 2 Torr to 10 Torr, and forming a conformal amorphous carbon layer on the substrate.

    摘要翻译： 在基板处理室中的基板上形成无定形碳层的方法包括将烃源引入到处理室中，将氩单独或与氦，氢，氮及其组合单独或组合地引入到处理室中， 其中氩气具有约10:1至约20:1的烃源体积流量比的体积流速，在处理室中以约2托至10托的基本较低的压力产生等离子体，并形成保形 无定形碳层。