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1.发明授权Radiation-sensitive colored composition, color filter and method for producing the same, solid state image device, and liquid crystal display apparatus 有权辐射敏感性着色组合物，滤色器及其制造方法，固态成像装置和液晶显示装置公开(公告)号：US08852832B2
公开(公告)日：2014-10-07
申请号：US13369078
申请日：2012-02-08
申请人： Kyouhei Arayama , Hiroaki Idei , Yushi Kaneko , Junichi Itou , Yousuke Murakami
发明人： Kyouhei Arayama , Hiroaki Idei , Yushi Kaneko , Junichi Itou , Yousuke Murakami
CPC分类号： G03F7/0007 , C09B23/04 , C09B57/10 , G02B5/223 , G03F7/027 , G03F7/029 , G03F7/031 , G03F7/105
摘要： Provided is a radiation-sensitive colored composition which exhibits excellent developability, has excellent heat resistance and solvent resistance, and is capable of forming a colored pattern with less color transfer and color unevenness.The radiation-sensitive colored composition includes a colorant multimer (A), a polymerizable compound (B), a photopolymerization initiator (C), and an organic solvent (D), wherein the content of an inorganic metal salt (X) including no colorant skeleton is 0.1% by mass or less with respect to a dye solid contents.
摘要翻译： 本发明提供一种显影性优异，耐热性和耐溶剂性优异的散射敏感性着色组合物，能够形成具有较少颜色转移和颜色不均匀性的着色图案。 辐射敏感性着色组合物包括着色剂多聚体（A），可聚合化合物（B），光聚合引发剂（C）和有机溶剂（D），其中不含着色剂的无机金属盐（X） 骨架相对于染料固体成分为0.1质量％以下。
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2.发明授权Radiation-sensitive colored composition, color filter, method for producing a color pattern, method for producing color filter, solid-state imaging device, and liquid crystal display apparatus 有权辐射敏感着色组合物，滤色器，彩色图案的制造方法，彩色滤光片的制造方法，固态成像装置以及液晶显示装置公开(公告)号：US09081273B2
公开(公告)日：2015-07-14
申请号：US13428926
申请日：2012-03-23
申请人： Yuzo Nagata , Atsuyasu Nozaki , Kenta Ushijima , Yushi Kaneko , Yousuke Murakami
发明人： Yuzo Nagata , Atsuyasu Nozaki , Kenta Ushijima , Yushi Kaneko , Yousuke Murakami
IPC分类号： G03F7/004 , G02B5/20 , G03F7/00 , G02F1/1335 , C09B69/10 , G03F7/027 , G03F7/033 , G03F7/105 , G02B5/22 , H01L27/146
CPC分类号： G03F7/0007 , C09B69/101 , C09B69/105 , C09B69/108 , C09B69/109 , G02B5/201 , G02B5/223 , G02F1/133516 , G02F2202/022 , G02F2202/023 , G02F2202/04 , G03F7/027 , G03F7/033 , G03F7/105 , H01L27/14621
摘要： The radiation-sensitive colored composition contains (A) a dye polymer containing a structural unit having a dye structure polymerized using a chain-transfer agent having a LogP value of 5 or less, and (B) a solvent.
摘要翻译： 该辐射敏感着色组合物含有（A）含有具有使用LogP值为5以下的链转移剂聚合的染料结构的结构单元的染料聚合物和（B）溶剂。
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3.发明申请DYE-CONTAINING NEGATIVE CURABLE COMPOSITION, COLOR FILTER USING SAME, METHOD OF PRODUCING COLOR FILTER, AND SOLID-STATE IMAGING DEVICE 有权含阴性可固化组合物，使用其的彩色滤光片，生产彩色滤光片的方法和固态成像装置公开(公告)号：US20110189598A1
公开(公告)日：2011-08-04
申请号：US13062281
申请日：2009-09-25
CPC分类号： G02B5/223 , C08F220/18 , G02B5/201 , G03F7/0007 , G03F7/033 , C08F220/06 , C08F220/34
摘要： The invention provides a dye-containing negative curable composition containing at least: (A) an organic solvent-soluble dye; (B) a photo-polymerization initiator; (C) a photo-polymerizable compound; (D) an amino group-containing alkali-soluble resin having, in a side chain thereof, a structure represented by the following Formula (1); and (E) an organic solvent. In Formula (1), R1 and R2 each independently represent a hydrogen atom or a monovalent organic group, and R1 and R2 may be linked with each other to form a ring structure.
摘要翻译： 本发明提供含有至少含有（A）有机溶剂可溶性染料的含染料的可固化组合物; （B）光聚合引发剂; （C）光聚合性化合物; （D）含有氨基的碱溶性树脂，其侧链具有由下式（1）表示的结构。 和（E）有机溶剂。 在式（1）中，R 1和R 2各自独立地表示氢原子或一价有机基团，并且R 1和R 2可以彼此连接形成环结构。
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公开(公告)号：US07364805B2
公开(公告)日：2008-04-29
申请号：US10466607
申请日：2002-01-18
申请人： Etsuo Morita , Yousuke Murakami , Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
发明人： Etsuo Morita , Yousuke Murakami , Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
CPC分类号： H01L21/02538 , C30B25/02 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265
摘要： A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1 elongating from below. The threading dislocation D1 is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1 is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1 expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.
摘要翻译： 使用具有位错的晶体基底来获得位错密度低的晶体膜，晶体基板和半导体器件。 生长衬底（11）的一侧设置有在其间具有缓冲层（12）的晶体层（13）。 晶体层（13）在从下方延伸的每个穿透位错D 1 1的末端具有间隔（13a），（13b）。 穿透位错D 1＆lt; 1＆gt;通过空间（13a），（13b）从上层分离，使得每个穿透位错D 1 1被阻止传播到 上层。 当由汉堡矢量表示的穿透位错D 1 1的位移被保留以产生另一位错时，空间（13a），（13b）改变其位移的方向。 结果，空间（13a），（13b）上方的上层以低位错密度变为结晶。
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公开(公告)号：US08741451B2
公开(公告)日：2014-06-03
申请号：US11976246
申请日：2007-10-23
申请人： Etsuo Morita , Yousuke Murakami , Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
发明人： Etsuo Morita , Yousuke Murakami , Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
CPC分类号： H01L21/02538 , C30B25/02 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265
摘要： A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1 elongating from below. The threading dislocation D1 is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1 is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1 expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.
摘要翻译： 使用具有位错的晶体基底来获得位错密度低的晶体膜，晶体基板和半导体器件。 生长衬底（11）的一侧设置有在其间具有缓冲层（12）的晶体层（13）。 在从下方延伸的每个穿透位错D1的端部中，晶体层（13）具有空间（13a），（13b）。 穿透位错D1通过空间（13a），（13b）与上层分开，使得每个穿透位错D1被阻止传播到上层。 当由汉堡矢量表示的穿透位错D1的位移被保留以产生另一个位错时，空间（13a），（13b）改变其位移的方向。 结果，空间（13a），（13b）上方的上层以低位错密度变成结晶。
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公开(公告)号：US20070125996A1
公开(公告)日：2007-06-07
申请号：US11699999
申请日：2007-01-31
申请人： Etsuo Morita , Yousuke Murakami , Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
发明人： Etsuo Morita , Yousuke Murakami , Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
IPC分类号： H01L29/06 , H01L33/00 , H01L31/00 , H01L29/739
CPC分类号： H01L21/02538 , C30B25/02 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265
摘要： A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1 elongating from below. The threading dislocation D1 is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1 is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1 expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.
摘要翻译： 使用具有位错的晶体基底来获得位错密度低的晶体膜，晶体基板和半导体器件。 生长衬底（11）的一侧设置有在其间具有缓冲层（12）的晶体层（13）。 晶体层（13）在从下方延伸的每个穿透位错D 1 1的末端具有间隔（13a），（13b）。 穿透位错D 1＆lt; 1＆gt;通过空间（13a），（13b）从上层分离，使得每个穿透位错D 1 1被阻止传播到 上层。 当由汉堡矢量表示的穿透位错D 1 1的位移被保留以产生另一位错时，空间（13a），（13b）改变其位移的方向。 结果，空间（13a），（13b）上方的上层以低位错密度变为结晶。
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7.发明授权Dye-containing negative curable composition, color filter using same, method of producing color filter, and solid-state imaging device 有权含染料阴性固化性组合物，使用其的滤色器，彩色滤光片的制造方法以及固态成像装置公开(公告)号：US08603708B2
公开(公告)日：2013-12-10
申请号：US13062281
申请日：2009-09-25
IPC分类号： G02B5/20
CPC分类号： G02B5/223 , C08F220/18 , G02B5/201 , G03F7/0007 , G03F7/033 , C08F220/06 , C08F220/34
摘要： The invention provides a dye-containing negative curable composition containing at least: (A) an organic solvent-soluble dye; (B) a photo-polymerization initiator; (C) a photo-polymerizable compound; (D) an amino group-containing alkali-soluble resin having, in a side chain thereof, a structure represented by the following Formula (1); and (E) an organic solvent. In Formula (1), R1 and R2 each independently represent a hydrogen atom or a monovalent organic group, and R1 and R2 may be linked with each other to form a ring structure.
摘要翻译： 本发明提供含有至少含有（A）有机溶剂可溶性染料的含染料的可固化组合物; （B）光聚合引发剂; （C）光聚合性化合物; （D）含有氨基的碱溶性树脂，其侧链具有由下式（1）表示的结构。 和（E）有机溶剂。 在式（1）中，R 1和R 2各自独立地表示氢原子或一价有机基团，并且R 1和R 2可以彼此连接形成环结构。
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公开(公告)号：US20080050599A1
公开(公告)日：2008-02-28
申请号：US11976246
申请日：2007-10-23
申请人： Etsuo Morita , Yousuke Murakami , Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
发明人： Etsuo Morita , Yousuke Murakami , Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
IPC分类号： B32B9/04
CPC分类号： H01L21/02538 , C30B25/02 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265
摘要： A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1 elongating from below. The threading dislocation D1 is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1 is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1 expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.
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公开(公告)号：US07727331B2
公开(公告)日：2010-06-01
申请号：US11699999
申请日：2007-01-31
申请人： Etsuo Morita , Yousuke Murakami , Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
发明人： Etsuo Morita , Yousuke Murakami , Goshi Biwa , Hiroyuki Okuyama , Masato Doi , Toyoharu Oohata
IPC分类号： C30B25/02
CPC分类号： H01L21/02538 , C30B25/02 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265
摘要： A crystal foundation having dislocations is used to obtain a crystal film of low dislocation density, a crystal substrate, and a semiconductor device. One side of a growth substrate (11) is provided with a crystal layer (13) with a buffer layer (12) in between. The crystal layer (13) has spaces (13a), (13b) in an end of each threading dislocation D1 elongating from below. The threading dislocation D1 is separated from the upper layer by the spaces (13a), (13b), so that each threading dislocation D1 is blocked from propagating to the upper layer. When the displacement of the threading dislocation D1 expressed by Burgers vector is preserved to develop another dislocation, the spaces (13a), (13b) vary the direction of its displacement. As a result, the upper layer above the spaces (13a), (13b) turns crystalline with a low dislocation density.
摘要翻译： 使用具有位错的晶体基底来获得位错密度低的晶体膜，晶体基板和半导体器件。 生长衬底（11）的一侧设置有在其间具有缓冲层（12）的晶体层（13）。 在从下方延伸的每个穿透位错D1的端部中，晶体层（13）具有空间（13a），（13b）。 穿透位错D1通过空间（13a），（13b）与上层分开，使得每个穿透位错D1被阻止传播到上层。 当由汉堡矢量表示的穿透位错D1的位移被保留以产生另一个位错时，空间（13a），（13b）改变其位移的方向。 结果，空间（13a），（13b）上方的上层以低位错密度变成结晶。
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