公开(公告)号：US11211504B2

公开(公告)日：2021-12-28

申请号：US15889950

申请日：2018-02-06

申请人： LG ELECTRONICS INC.

发明人： Haejong Cho ,  Donghae Oh ,  Juhwa Cheong ,  Junyong Ahn

IPC分类号： H01L31/0224 ,  H01B1/16 ,  C03C8/18 ,  C03C4/14 ,  C03C8/10 ,  H01L31/0216 ,  H01L31/0368 ,  H01L31/068 ,  H01L31/0236 ,  H01L31/18

摘要： A solar cell is disclosed. The solar cell includes a first conductive region positioned at a front surface of a semiconductor substrate and containing impurities of a first conductivity type or a second conductivity type, a second conductive region positioned at a back surface of the semiconductor substrate and containing impurities of a conductivity type opposite a conductivity type of impurities of the first conductive region, a first electrode positioned on the front surface of the semiconductor substrate and connected to the first conductive region, and a second electrode positioned on the back surface of the semiconductor substrate and connected to the second conductive region. Each of the first and second electrodes includes metal particles and a glass frit.

公开(公告)号：US09343599B2

公开(公告)日：2016-05-17

申请号：US14146501

申请日：2014-01-02

申请人： LG ELECTRONICS INC.

发明人： Juhwa Cheong ,  Hyunjung Park ,  Junyong Ahn ,  Seongeun Lee ,  Jiweon Jeong

IPC分类号： H01L31/00 ,  H01L31/0236 ,  H01L31/0216 ,  H01L31/18

CPC分类号： H01L31/02363 ,  H01L31/02168 ,  H01L31/18 ,  Y02E10/50 ,  Y02E10/52

摘要： A method of manufacturing a solar cell includes forming jagged portions non-uniformly on a surface of a substrate, forming a first type semiconductor and a second type semiconductor in the substrate, forming a first electrode to contact the first type semiconductor, and forming a second electrode to contact the second type semiconductor. An etchant used in a wet etching process in manufacturing the solar cell includes about 0.5 wt % to 10 wt % of HF, about 30 wt % to 60 wt % of HNO3, and up to about 30 wt % of acetic acid based on total weight of the etchant.

摘要翻译： 太阳能电池的制造方法包括在基板的表面上不均匀地形成锯齿状的部分，在基板上形成第一型半导体和第二型半导体，形成与第一型半导体接触的第一电极，形成第二 电极接触第二类型半导体。 在制造太阳能电池的湿式蚀刻工艺中使用的蚀刻剂包括约0.5重量％至10重量％的HF，约30重量％至60重量％的HNO 3和至多约30重量％的基于总重量的乙酸 的蚀刻剂。

公开(公告)号：US09029188B2

公开(公告)日：2015-05-12

申请号：US14286806

申请日：2014-05-23

申请人： LG Electronics Inc.

发明人： Jungmin Ha ,  Junyong Ahn ,  Jinho Kim

IPC分类号： H01L31/18 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/0352 ,  H01L31/068

CPC分类号： H01L31/186 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/03529 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1864 ,  Y02E10/52 ,  Y02E10/547

摘要： A method for manufacturing a solar cell is discussed. The method may include injecting first impurity ions at a first surface of a substrate by using a first ion implantation method to form a first impurity region, the substrate having a first conductivity type and the first impurity ions having a second conductivity type, and the first impurity region having the second conductivity type; heating the substrate with the first impurity region to activate the first impurity region to form an emitter region from the first impurity region; etching the emitter region from a surface of the emitter region to a predetermined depth to form an emitter part from the emitter region; and forming a first electrode on the emitter part to connect to the emitter part and a second electrode on a second surface of the substrate to connect to the second surface of the substrate.

摘要翻译： 讨论了太阳能电池的制造方法。 所述方法可以包括通过使用第一离子注入方法在衬底的第一表面处注入第一杂质离子以形成第一杂质区，所述衬底具有第一导电类型，并且所述第一杂质离子具有第二导电类型，并且所述第一杂质离子 具有第二导电类型的杂质区; 用所述第一杂质区域加热所述衬底以激活所述第一杂质区域以从所述第一杂质区域形成发射极区域; 将发射极区域从发射极区域的表面蚀刻到预定深度以从发射极区域形成发射极部分; 以及在所述发射极部分上形成第一电极以连接到所述发射极部分，以及在所述基板的第二表面上连接到所述基板的第二表面的第二电极。

公开(公告)号：US11462654B2

公开(公告)日：2022-10-04

申请号：US16504995

申请日：2019-07-08

申请人： LG ELECTRONICS INC.

发明人： Wonjae Chang ,  Sungjin Kim ,  Juhwa Cheong ,  Junyong Ahn

IPC分类号： H01L31/0745 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0288 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/0368

摘要： Disclosed is a solar cell including a semiconductor substrate, and a dopant layer disposed over one surface of the semiconductor substrate and having a crystalline structure different from that of the semiconductor substrate, the dopant layer including a dopant. The dopant layer includes a plurality of semiconductor layers stacked one above another in a thickness direction thereof, and an interface layer interposed therebetween. The interface layer is an oxide layer having a higher concentration of oxygen than that in each of the plurality of semiconductor layers.

公开(公告)号：US11239379B2

公开(公告)日：2022-02-01

申请号：US16456915

申请日：2019-06-28

申请人： LG ELECTRONICS INC.

发明人： Jungmin Ha ,  Sungjin Kim ,  Juhwa Cheong ,  Junyong Ahn ,  Hyungwook Choi ,  Wonjae Chang ,  Jaesung Kim

IPC分类号： H01L31/0224 ,  H01L31/0216 ,  H01L31/0747 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/18

摘要： A solar cell can include a silicon substrate; a tunnel layer disposed on a first surface of the silicon substrate, the tunnel layer including a dielectric material; a polycrystalline silicon layer disposed on the tunnel layer; a dielectric layer disposed on the polycrystalline silicon layer; and an electrode penetrating through the dielectric layer and directly contacting with the polycrystalline silicon layer, wherein the polycrystalline silicon layer includes a metal crystal region positioned at a region where the polycrystalline silicon layer contacts the electrode, and wherein the metal crystal region includes a plurality of metal crystals, the plurality of metal crystals including a metal material same as a metal material included in the electrode.

公开(公告)号：US10971646B2

公开(公告)日：2021-04-06

申请号：US16520014

申请日：2019-07-23

申请人： LG ELECTRONICS INC.

发明人： Wonjae Chang ,  Junyong Ahn ,  Hyunho Lee

IPC分类号： H01L31/18 ,  C23C16/24 ,  C23C16/455 ,  C23C16/458

摘要： Provided is a Chemical vapor deposition (CVD) equipment including a chamber having an inner space, a plurality of silicon wafers disposed in the inner space of the chamber in an upright position; and a plurality of shower nozzles configured to inject a mixed gas composed of a silicon deposition gas and an impurity gas toward each side edge of the plurality of wafers. The plurality of shower nozzles can be disposed at both sides of the plurality of the plurality of silicon wafers.

公开(公告)号：US10050170B2

公开(公告)日：2018-08-14

申请号：US15418336

申请日：2017-01-27

申请人： LG ELECTRONICS INC.

发明人： Juhwa Cheong ,  Junyong Ahn ,  Wonjae Chang ,  Jaesung Kim

IPC分类号： H01L31/18 ,  H01L31/20 ,  H01L31/0236 ,  H01L31/0216 ,  H01L31/0745 ,  H01L31/105 ,  H01L31/024 ,  H01L31/068 ,  H01L31/0224

CPC分类号： H01L31/1864 ,  H01L31/0216 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/0236 ,  H01L31/024 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/105 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/186 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of manufacturing a solar cell can include forming a silicon oxide film on a semiconductor substrate and successively exposing the silicon oxide film to a temperature in a range of 570° C. to 700° C. to anneal the silicon oxide film.

公开(公告)号：US20180097140A1

公开(公告)日：2018-04-05

申请号：US15832321

申请日：2017-12-05

申请人： LG ELECTRONICS INC.

发明人： Juhwa Cheong ,  Junyong Ahn ,  Wonjae Chang ,  Jaesung Kim

IPC分类号： H01L31/18 ,  H01L31/0368 ,  H01L31/068

CPC分类号： H01L31/1804 ,  H01L31/0216 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/0236 ,  H01L31/024 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/105 ,  H01L31/182 ,  H01L31/186 ,  H01L31/1864 ,  H01L31/202 ,  H01L31/208 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of manufacturing a solar cell can include forming a silicon oxide film on a semiconductor substrate and successively exposing the silicon oxide film to a temperature in a range of 570° C. to 700° C. to anneal the silicon oxide film.

公开(公告)号：US11133426B2

公开(公告)日：2021-09-28

申请号：US16457129

申请日：2019-06-28

申请人： LG ELECTRONICS INC.

发明人： Jungmin Ha ,  Sungjin Kim ,  Juhwa Cheong ,  Junyong Ahn ,  Hyungwook Choi ,  Wonjae Chang ,  Jaesung Kim

IPC分类号： H01L31/0224 ,  H01L31/0216 ,  H01L31/0747 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/18

摘要： A method for manufacturing a solar cell can include forming a tunneling layer on first and second surfaces of a semiconductor substrate, the tunneling layer including a dielectric material; forming a polycrystalline silicon layer on the tunnel layer at the first surface and on the second surface of the semiconductor substrate; removing portions of the tunnel layer and the polycrystalline silicon layer formed at the first surface of the semiconductor substrate; forming a doping region at the first surface of the semiconductor substrate by diffusing a dopant; forming a passivation layer on the polycrystalline silicon layer at the second surface of the semiconductor substrate; and forming a second electrode connected to the polycrystalline silicon layer by penetrating through the passivation layer.

公开(公告)号：US10230009B2

公开(公告)日：2019-03-12

申请号：US15995701

申请日：2018-06-01

申请人： LG ELECTRONICS INC.

发明人： Jungmin Ha ,  Sungjin Kim ,  Juhwa Cheong ,  Junyong Ahn ,  Hyungwook Choi ,  Wonjae Chang ,  Jaesung Kim

IPC分类号： H01L31/0216 ,  H01L31/0224 ,  H01L31/0747 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/18

摘要： A solar cell can include a silicon semiconductor substrate having a first conductive type; a oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer and having the first conductive type; an emitter region at a second surface of the silicon semiconductor substrate opposite to the first surface and having a second conductive type opposite to the first conductive type; a first passivation film on the polysilicon layer; a first electrode connected to the polysilicon layer through an opening formed in the first passivation film; a second passivation film on the emitter region; and a second electrode connected to the emitter region through an opening formed in the second passivation film.