公开(公告)号：US09425078B2

公开(公告)日：2016-08-23

申请号：US14630852

申请日：2015-02-25

申请人： LAM RESEARCH CORPORATION

发明人： Wei Tang ,  Bart Van Schravendijk ,  Jun Qian ,  Hu Kang ,  Adrien LaVoie ,  Deenesh Padhi ,  David C. Smith

IPC分类号： H01L21/3205 ,  H01L21/283 ,  H01L21/762 ,  C23C16/455 ,  C23C16/52 ,  H01L21/02

CPC分类号： H01L21/76224 ,  C23C16/02 ,  C23C16/045 ,  C23C16/402 ,  C23C16/45527 ,  C23C16/45534 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/458 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32449 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/32051 ,  H01L21/76837

摘要： Systems and methods for depositing film in a substrate processing system includes performing a first atomic layer deposition (ALD) cycle in a processing chamber to deposit film on a substrate including a feature; after the first ALD cycle, exposing the substrate to an inhibitor plasma in the processing chamber for a predetermined period to create a varying passivated surface in the feature; and after the predetermined period, performing a second ALD cycle in the processing chamber to deposit film on the substrate.

摘要翻译： 用于在衬底处理系统中沉积膜的系统和方法包括在处理室中执行第一原子层沉积（ALD）循环以在包括特征的衬底上沉积膜; 在第一ALD循环之后，将衬底暴露于处理室中的抑制剂等离子体一段预定时间段，以在该特征中产生变化的钝化表面; 并且在所述预定时段之后，在所述处理室中执行第二ALD循环以将膜沉积在所述基板上。

公开(公告)号：US20150118863A1

公开(公告)日：2015-04-30

申请号：US14519712

申请日：2014-10-21

申请人： Lam Research Corporation

发明人： Megha Rathod ,  Deenesh Padhi ,  Nerissa Draeger ,  Bart J. van Schravendijk ,  Kaihan Ashtiani

IPC分类号： H01L21/02 ,  C23C16/50 ,  C23C16/455 ,  C23C16/52

CPC分类号： H01L21/0234 ,  C23C16/045 ,  C23C16/401 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/50 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02315 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/68742 ,  H01L21/76224 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76837

摘要： Provided herein are methods and apparatus for forming flowable dielectric films having low porosity. In some embodiments, the methods involve plasma post-treatments of flowable dielectric films. The treatments can involve exposing a flowable film to a plasma while the film is still in a flowable, reactive state but after deposition of new material has ceased.

摘要翻译： 本文提供了用于形成具有低孔隙率的可流动电介质膜的方法和装置。 在一些实施方案中，该方法涉及可流动介电膜的等离子体后处理。 处理可以包括将可流动膜暴露于等离子体，同时膜仍处于可流动的反应状态，但是新材料的沉积已经停止。

公开(公告)号：US10049921B2

公开(公告)日：2018-08-14

申请号：US14464071

申请日：2014-08-20

申请人： Lam Research Corporation

发明人： Nerissa Sue Draeger ,  Kaihan Abidi Ashtiani ,  Deenesh Padhi ,  Derek B. Wong ,  Bart J. van Schravendijk ,  George Andrew Antonelli ,  Artur Kolics ,  Lie Zhao ,  Patrick A. van Cleemput

IPC分类号： H01L21/768 ,  C23C16/04 ,  C23C16/40 ,  C23C16/56 ,  H01L23/532

摘要： Implementations of the methods and apparatus disclosed herein relate to pore sealing of porous dielectric films using flowable dielectric material. The methods involve exposing a substrate having an exposed porous dielectric film thereon to a vapor phase dielectric precursor under conditions such that a flowable dielectric material selectively deposits in the pores of the porous dielectric material. The pores can be filled with the deposited flowable dielectric material without depositing a continuous film on any exposed metal surface.

公开(公告)号：US20160056071A1

公开(公告)日：2016-02-25

申请号：US14464071

申请日：2014-08-20

申请人： Lam Research Corporation

发明人： Nerissa Sue Draeger ,  Kaihan Abidi Ashtiani ,  Deenesh Padhi ,  Derek B. Wong ,  Bart J. van Schravendijk ,  George Andrew Antonelli ,  Artur Kolics ,  Lie Zhao ,  Patrick A. van Cleemput

IPC分类号： H01L21/768 ,  C23C16/46 ,  C23C16/52

CPC分类号： H01L21/76826 ,  C23C16/045 ,  C23C16/401 ,  C23C16/56 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76876 ,  H01L23/53238 ,  H01L23/5329

摘要： Implementations of the methods and apparatus disclosed herein relate to pore sealing of porous dielectric films using flowable dielectric material. The methods involve exposing a substrate having an exposed porous dielectric film thereon to a vapor phase dielectric precursor under conditions such that a flowable dielectric material selectively deposits in the pores of the porous dielectric material. The pores can be filled with the deposited flowable dielectric material without depositing a continuous film on any exposed metal surface.

摘要翻译： 本文公开的方法和装置的实施涉及使用可流动电介质材料的多孔绝缘膜的孔密封。 所述方法包括将其上具有暴露的多孔介电膜的衬底暴露于气相电介质前体，使得可流动介电材料选择性地沉积在多孔介电材料的孔中。 可以用沉积的可流动电介质材料填充孔，而不在任何暴露的金属表面上沉积连续的膜。

公开(公告)号：US09966299B2

公开(公告)日：2018-05-08

申请号：US15213750

申请日：2016-07-19

申请人： LAM RESEARCH CORPORATION

发明人： Wei Tang ,  Bart Van Schravendijk ,  Jun Qian ,  Hu Kang ,  Adrien LaVoie ,  Deenesh Padhi ,  David C. Smith

IPC分类号： H01L21/762 ,  H01L21/02 ,  C23C16/455 ,  C23C16/52 ,  H01L21/3205 ,  H01L21/768 ,  C23C16/458 ,  C23C16/50 ,  C23C16/02 ,  C23C16/04 ,  C23C16/40 ,  H01J37/32

CPC分类号： H01L21/76224 ,  C23C16/02 ,  C23C16/045 ,  C23C16/402 ,  C23C16/45527 ,  C23C16/45534 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/458 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32449 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/32051 ,  H01L21/76837

摘要： Systems and methods for depositing film in a substrate processing system includes performing a first atomic layer deposition (ALD) cycle in a processing chamber to deposit film on a substrate including a feature; after the first ALD cycle, exposing the substrate to an inhibitor plasma in the processing chamber for a predetermined period to create a varying passivated surface in the feature; and after the predetermined period, performing a second ALD cycle in the processing chamber to deposit film on the substrate.

公开(公告)号：US20160329238A1

公开(公告)日：2016-11-10

申请号：US15213750

申请日：2016-07-19

申请人： LAM RESEARCH CORPORATION

发明人： Wei Tang ,  Bart Van Schravendijk ,  Jun Qian ,  Hu Kang ,  Adrien LaVoie ,  Deenesh Padhi ,  David C. Smith

IPC分类号： H01L21/762 ,  C23C16/458 ,  C23C16/455 ,  C23C16/52 ,  H01L21/02 ,  C23C16/50

CPC分类号： H01L21/76224 ,  C23C16/02 ,  C23C16/045 ,  C23C16/402 ,  C23C16/45527 ,  C23C16/45534 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/458 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32449 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/32051 ,  H01L21/76837

摘要： Systems and methods for depositing film in a substrate processing system includes performing a first atomic layer deposition (ALD) cycle in a processing chamber to deposit film on a substrate including a feature; after the first ALD cycle, exposing the substrate to an inhibitor plasma in the processing chamber for a predetermined period to create a varying passivated surface in the feature; and after the predetermined period, performing a second ALD cycle in the processing chamber to deposit film on the substrate.

公开(公告)号：US20150243545A1

公开(公告)日：2015-08-27

申请号：US14630852

申请日：2015-02-25

申请人： LAM RESEARCH CORPORATION

发明人： Wei Tang ,  Bart Van Schravendijk ,  Jun Qian ,  Hu Kang ,  Adrien LaVoie ,  Deenesh Padhi ,  David C. Smith

IPC分类号： H01L21/762 ,  H01L21/3205 ,  H01L21/02 ,  C23C16/455 ,  C23C16/52

CPC分类号： H01L21/76224 ,  C23C16/02 ,  C23C16/045 ,  C23C16/402 ,  C23C16/45527 ,  C23C16/45534 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/458 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32449 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/32051 ,  H01L21/76837

摘要： Systems and methods for depositing film in a substrate processing system includes performing a first atomic layer deposition (ALD) cycle in a processing chamber to deposit film on a substrate including a feature; after the first ALD cycle, exposing the substrate to an inhibitor plasma in the processing chamber for a predetermined period to create a varying passivated surface in the feature; and after the predetermined period, performing a second ALD cycle in the processing chamber to deposit film on the substrate.

摘要翻译： 用于在衬底处理系统中沉积膜的系统和方法包括在处理室中执行第一原子层沉积（ALD）循环以在包括特征的衬底上沉积膜; 在第一ALD循环之后，将衬底暴露于处理室中的抑制剂等离子体一段预定时间段，以在该特征中产生变化的钝化表面; 并且在所述预定时段之后，在所述处理室中执行第二ALD循环以将膜沉积在所述基板上。