公开(公告)号：US10049921B2

公开(公告)日：2018-08-14

申请号：US14464071

申请日：2014-08-20

Applicant: Lam Research Corporation

Inventor： Nerissa Sue Draeger ,  Kaihan Abidi Ashtiani ,  Deenesh Padhi ,  Derek B. Wong ,  Bart J. van Schravendijk ,  George Andrew Antonelli ,  Artur Kolics ,  Lie Zhao ,  Patrick A. van Cleemput

IPC: H01L21/768 ,  C23C16/04 ,  C23C16/40 ,  C23C16/56 ,  H01L23/532

Abstract: Implementations of the methods and apparatus disclosed herein relate to pore sealing of porous dielectric films using flowable dielectric material. The methods involve exposing a substrate having an exposed porous dielectric film thereon to a vapor phase dielectric precursor under conditions such that a flowable dielectric material selectively deposits in the pores of the porous dielectric material. The pores can be filled with the deposited flowable dielectric material without depositing a continuous film on any exposed metal surface.

公开(公告)号：US09490211B1

公开(公告)日：2016-11-08

申请号：US14747949

申请日：2015-06-23

Applicant: Lam Research Corporation

Inventor： Lie Zhao ,  Artur Kolics

IPC: H01L21/00 ,  H01L23/532 ,  H01L21/768 ,  H01L21/02 ,  H01L23/522

CPC classification number: H01L23/53238 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/5226

Abstract: A method of filling features in a dielectric layer is provided. A pure Co or pure Ru adhesion layer is deposited against surfaces of the features, wherein the adhesion layer is separated from some of the surfaces of the features of the low-k dielectric layer by no more than 10 Å. The features are filled with Cu or a Cu alloy.

Abstract translation: 提供了填充介电层中的特征的方法。 将纯Co或纯Ru粘附层沉积在特征的表面上，其中粘附层与低k电介质层的特征的一些表面分开不超过10埃。 特征填充有Cu或Cu合金。

公开(公告)号：US20160056071A1

公开(公告)日：2016-02-25

申请号：US14464071

申请日：2014-08-20

Applicant: Lam Research Corporation

Inventor： Nerissa Sue Draeger ,  Kaihan Abidi Ashtiani ,  Deenesh Padhi ,  Derek B. Wong ,  Bart J. van Schravendijk ,  George Andrew Antonelli ,  Artur Kolics ,  Lie Zhao ,  Patrick A. van Cleemput

IPC: H01L21/768 ,  C23C16/46 ,  C23C16/52

CPC classification number: H01L21/76826 ,  C23C16/045 ,  C23C16/401 ,  C23C16/56 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76876 ,  H01L23/53238 ,  H01L23/5329

Abstract: Implementations of the methods and apparatus disclosed herein relate to pore sealing of porous dielectric films using flowable dielectric material. The methods involve exposing a substrate having an exposed porous dielectric film thereon to a vapor phase dielectric precursor under conditions such that a flowable dielectric material selectively deposits in the pores of the porous dielectric material. The pores can be filled with the deposited flowable dielectric material without depositing a continuous film on any exposed metal surface.

Abstract translation: 本文公开的方法和装置的实施涉及使用可流动电介质材料的多孔绝缘膜的孔密封。 所述方法包括将其上具有暴露的多孔介电膜的衬底暴露于气相电介质前体，使得可流动介电材料选择性地沉积在多孔介电材料的孔中。 可以用沉积的可流动电介质材料填充孔，而不在任何暴露的金属表面上沉积连续的膜。

公开(公告)号：US20230223263A1

公开(公告)日：2023-07-13

申请号：US17997697

申请日：2021-04-22

Applicant: Lam Research Corporation

Inventor： Daniela Anjos RIGSBY ,  Ragesh PUTHENKOVILAKAM ,  Alice G. HOLLISTER ,  Lie Zhao

IPC: H01L21/033 ,  H01L21/311 ,  H01J37/32 ,  C23C16/50 ,  C23C16/26 ,  C23C16/56

CPC classification number: H01L21/0337 ,  H01L21/31144 ,  H01L21/31116 ,  H01J37/32926 ,  C23C16/50 ,  C23C16/26 ,  C23C16/56 ,  H01J2237/332 ,  H01J2237/334

Abstract: An amorphous carbon hard mask is formed having low hydrogen content and low sp3 carbon bonding but high modulus and hardness. The amorphous carbon hard mask is formed by depositing an amorphous carbon layer at a low temperature in a plasma deposition chamber and treating the amorphous carbon layer to a dual plasma-thermal treatment. The dual plasma-thermal treatment includes exposing the amorphous carbon layer to inert gas plasma for implanting an inert gas species in the amorphous carbon layer and exposing the amorphous carbon layer to a high temperature. The amorphous carbon hard mask has high etch selectivity relative to underlying materials.

公开(公告)号：US09768063B1

公开(公告)日：2017-09-19

申请号：US15199632

申请日：2016-06-30

Applicant: Lam Research Corporation

Inventor： Artur Kolics ,  Praveen Nalla ,  Lie Zhao

IPC: H01L21/768

CPC classification number: H01L21/76883 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/7685 ,  H01L21/76879 ,  H01L23/481

Abstract: A method for filling vias formed in a dielectric layer with a metal or metal alloy that has a low solubility with copper over copper containing interconnects, wherein the vias are part of a dual damascene structure with trenches and vias is provided. A sealing layer of a first metal or metal alloy that has a low solubility with copper is selectively deposited directly on the copper containing interconnects in at bottoms of the vias, wherein sidewalls of the dielectric layer forming the vias are exposed to the depositing the sealing layer, and wherein the first metal or metal alloy that has a low solubility is selectively deposited to only form a layer on the copper containing interconnects. A via fill of a second metal or metal alloy that has a low solubility with copper is electrolessly deposited over the sealing layer, which fills the vias.