公开(公告)号：US20170365513A1

公开(公告)日：2017-12-21

申请号：US15640940

申请日：2017-07-03

Applicant: Lam Research Corporation

Inventor： Tsung-Han Yang ,  Anand Chandrashekar ,  Jasmine Lin ,  Deqi Wang ,  Gang Liu ,  Michal Danek ,  Siew Neo

IPC: H01L21/768 ,  H01L21/285

CPC classification number: H01L21/76876 ,  C23C16/04 ,  C23C16/045 ,  C23C16/06 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/321 ,  H01L21/76879 ,  H01L21/76898 ,  H01L27/10891

Abstract: Described herein are methods of filling features with tungsten, and related systems and apparatus, involving inhibition of tungsten nucleation. In some embodiments, the methods involve selective inhibition along a feature profile. Methods of selectively inhibiting tungsten nucleation can include exposing the feature to ammonia vapor in a non-plasma process. Process parameters including exposure time, substrate temperature, and chamber pressure can be used to tune the inhibition profile. Also provided are methods of filling multiple adjacent lines with reduced or no line bending. The methods involve selectively inhibiting the tungsten nucleation to reduce sidewall growth during feature fill.

公开(公告)号：US12173399B2

公开(公告)日：2024-12-24

申请号：US17634067

申请日：2020-08-18

Applicant: Lam Research Corporation

Inventor： Anand Chandrashekar ,  Lei Guo ,  Tsung-Han Yang

IPC: C23C16/34 ,  C23C16/02 ,  C23C16/455

Abstract: Methods of mitigating line bending during feature fill include deposition of an amorphous layer and/or an inhibition treatment during fill.

公开(公告)号：US12002679B2

公开(公告)日：2024-06-04

申请号：US17601918

申请日：2020-04-07

Applicant: Lam Research Corporation

Inventor： Michael Bowes ,  Tsung-Han Yang ,  Anand Chandrashekar ,  Xing Zhang

IPC: H01L21/768 ,  H01L21/285

CPC classification number: H01L21/28568 ,  H01L21/76876 ,  H01L21/76877

Abstract: Methods of depositing a tungsten nucleation layers that achieve very good step coverage are provided. The methods involve a sequence of alternating pulses of a tungsten-containing precursor and a boron-containing reducing agent, while co-flowing hydrogen (H2) with the boron-containing reducing agent. The H2 flow is stopped prior to the tungsten-containing precursor flow. By co-flowing H2 with the boron-containing reducing agent but not with the tungsten-containing precursor flow, a parasitic CVD component is reduced, resulting in a more self-limiting process. This in turn improves step coverage and conformality of the nucleation layer. Related apparatuses are also provided.

公开(公告)号：US20220181158A1

公开(公告)日：2022-06-09

申请号：US17601918

申请日：2020-04-07

Applicant: Lam Research Corporation

Inventor： Michael Bowes ,  Tsung-Han Yang ,  Anand Chandrashekar ,  Xing Zhang

IPC: H01L21/285 ,  H01L21/768

Abstract: Methods of depositing a tungsten nucleation layers that achieve very good step coverage are provided. The methods involve a sequence of alternating pulses of a tungsten-containing precursor and a boron-containing reducing agent, while co-flowing hydrogen (H2) with the boron-containing reducing agent. The H2 flow is stopped prior to the tungsten-containing precursor flow. By co-flowing H2 with the boron-containing reducing agent but not with the tungsten-containing precursor flow, a parasitic CVD component is reduced, resulting in a more self-limiting process. This in turn improves step coverage and conformality of the nucleation layer. Related apparatuses are also provided.

公开(公告)号：US20220172987A1

公开(公告)日：2022-06-02

申请号：US17430633

申请日：2020-02-13

Applicant: Lam Research Corporation

Inventor： Tsung-Han Yang ,  Michael Bowes ,  Gang Liu ,  Anand Chandrashekar

IPC: H01L21/768

Abstract: Systems and methods for selective inhibition control in semiconductor manufacturing are provided. An example method includes providing a substrate including a feature having one or more feature openings and a feature interior. A nucleation layer is formed on a surface of the feature interior. Based on a differential inhibition profile, a nonconformal bulk layer is selectively formed on a surface of the nucleation layer to leave a region of the nucleation layer covered, and a region of the nucleation layer uncovered by the nonconformal bulk layer. An inhibition layer is selectively formed on the covered and uncovered regions of the nucleation layer. Tungsten is deposited in the feature in accordance with the differential inhibition profile.

公开(公告)号：US20220020641A1

公开(公告)日：2022-01-20

申请号：US17299753

申请日：2019-12-05

Applicant: Lam Research Corporation

Inventor： Anand Chandrashekar ,  Tsung-Han Yang

IPC: H01L21/768 ,  H01J37/32 ,  C23C16/04 ,  C23C16/06 ,  C23C16/455 ,  C23C16/52

Abstract: Provided herein are methods of depositing low stress and void free metal films in deep features and related apparatus. Embodiments of the methods include treating the sidewalls of the holes to inhibit metal deposition while leaving the feature bottom untreated. In subsequent deposition operations, metal precursor molecules diffuse to the feature bottom for deposition. The process is repeated with subsequent inhibition operations treating the remaining exposed sidewalls. By repeating inhibition and deposition operations, high quality void free fill can be achieved. This allows high temperature, low stress deposition to be performed.

公开(公告)号：US10211099B2

公开(公告)日：2019-02-19

申请号：US15384175

申请日：2016-12-19

Applicant: Lam Research Corporation

Inventor： Deqi Wang ,  Gang Liu ,  Anand Chandrashekar ,  Tsung-Han Yang ,  John W. Griswold

IPC: H01L21/31 ,  H01L21/768 ,  H01L21/285 ,  C23C16/08 ,  C23C16/455 ,  H01J37/32 ,  H01L21/67 ,  H01L21/687

Abstract: The methods, systems and apparatus described herein relate to chamber conditioning for remote plasma processes, in particular remote nitrogen-based plasma processes. Certain implementations of the disclosure relate to remote plasma inhibition processes for feature fill that include chamber conditioning. Embodiments of the disclosure relate to exposing remote plasma processing chambers to fluorine species prior to nitrogen-based remote plasma processing of substrates such as semiconductor wafers. Within-wafer uniformity and wafer-to-wafer uniformity is improved.

公开(公告)号：US11978666B2

公开(公告)日：2024-05-07

申请号：US17299753

申请日：2019-12-05

Applicant: Lam Research Corporation

Inventor： Anand Chandrashekar ,  Tsung-Han Yang

IPC: H01L21/768 ,  C23C16/04 ,  C23C16/06 ,  C23C16/455 ,  C23C16/52 ,  H01J37/32 ,  H01L21/285 ,  H10B69/00

CPC classification number: H01L21/76879 ,  C23C16/04 ,  C23C16/06 ,  C23C16/45534 ,  C23C16/52 ,  H01J37/32449 ,  H01J37/32715 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/28568 ,  H10B69/00

Abstract: Provided herein are methods of depositing low stress and void free metal films in deep features and related apparatus. Embodiments of the methods include treating the sidewalls of the holes to inhibit metal deposition while leaving the feature bottom untreated. In subsequent deposition operations, metal precursor molecules diffuse to the feature bottom for deposition. The process is repeated with subsequent inhibition operations treating the remaining exposed sidewalls. By repeating inhibition and deposition operations, high quality void free fill can be achieved. This allows high temperature, low stress deposition to be performed.

公开(公告)号：US20180174901A1

公开(公告)日：2018-06-21

申请号：US15384175

申请日：2016-12-19

Applicant: Lam Research Corporation

Inventor： Deqi Wang ,  Gang Liu ,  Anand Chandrashekar ,  Tsung-Han Yang ,  John W. Griswold

IPC: H01L21/768 ,  H01L21/67 ,  H01L21/285 ,  C23C16/08 ,  C23C16/455 ,  H01J37/32

CPC classification number: H01L21/76879 ,  C23C16/08 ,  C23C16/4554 ,  C23C16/45565 ,  H01J37/3211 ,  H01J37/32183 ,  H01J37/32357 ,  H01J37/3244 ,  H01J2237/3321 ,  H01L21/28562 ,  H01L21/67161 ,  H01L21/68764 ,  H01L21/68771

Abstract: The methods, systems and apparatus described herein relate to chamber conditioning for remote plasma processes, in particular remote nitrogen-based plasma processes. Certain implementations of the disclosure relate to remote plasma inhibition processes for feature fill that include chamber conditioning. Embodiments of the disclosure relate to exposing remote plasma processing chambers to fluorine species prior to nitrogen-based remote plasma processing of substrates such as semiconductor wafers. Within-wafer uniformity and wafer-to-wafer uniformity is improved.