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    Laser dye or pigment removal imaging process
    1.
    发明授权
    Laser dye or pigment removal imaging process 失效
    激光染料或颜料去除成像工艺

    公开(公告)号：US5672458A

    公开(公告)日：1997-09-30

    申请号：US681582

    申请日：1996-07-29

    申请人： Lee William Tutt ,  Mitchell Stewart Burberry ,  Vito A. DePalma ,  William Keith Goebel ,  Scott Eric Tunney

    发明人： Lee William Tutt ,  Mitchell Stewart Burberry ,  Vito A. DePalma ,  William Keith Goebel ,  Scott Eric Tunney

    IPC分类号： B41M5/26 ,  B41M5/24 ,  B41M7/00 ,  G03G17/00 ,  H05K3/06 ,  G03G13/20 ,  B32B9/04

    CPC分类号： G03G17/00 ,  B41M5/24 ,  B41M7/0027 ,  H05K3/065 ,  Y10S430/146

    摘要： A process of forming a single color, ablation image having improved abrasion resistance comprising: a) imagewise-heating by means of a laser an ablative recording element comprising a support having thereon an image layer comprising an image dye or pigment dispersed in a polymeric binder, which causes the image layer to ablate imagewise, the image layer having a near infrared-absorbing material associated therewith to absorb at a given wavelength of the laser used to expose the element, the image dye or pigment absorbing in the region of from about 300 to about 700 nm; b) removing the ablated material to obtain an image in the ablative recording element; c) either charging the imaged, ablative recording element to a given polarity or applying a voltage across the surface of the element which is attracted to a conductive surface behind the element; d) applying colorless, charged particles to the element which causes them to be electrostatically attracted to the surface of the image layer; and e) heat-fusing the particles to obtain a protective overcoat over the entire surface of the image layer.

    摘要翻译： 一种形成具有改善的耐磨性的单色消融图像的方法，包括：a）通过激光对烧蚀记录元件进行成像加热，所述烧蚀记录元件包括其上具有分散在聚合物粘合剂中的图像层的图像层， 这导致图像层以图像方式烧蚀，图像层具有与其相关联的近红外吸收材料，以在用于暴露元件的激光的给定波长处吸收，图像染料或颜料在约300至 约700nm; b）去除烧蚀的材料以获得烧蚀记录元件中的图像; c）将成像的烧蚀记录元件充电到给定的极性，或者在被吸引到元件后面的导电表面的元件的表面上施加电压; d）将无色带电粒子施加到元件上，使其静电吸引到图像层的表面; 以及e）热熔融所述颗粒以在所述图像层的整个表面上获得保护性外涂层。

    Overcoat for thermal imaging process
    2.
    发明授权
    Overcoat for thermal imaging process 失效
    外罩用于热成像工艺

    公开(公告)号：US6031556A

    公开(公告)日：2000-02-29

    申请号：US681677

    申请日：1996-07-29

    申请人： Lee William Tutt ,  Mitchell Stewart Burberry ,  Vito A DePalma ,  William Keith Goebel ,  Scott Eric Tunney

    发明人： Lee William Tutt ,  Mitchell Stewart Burberry ,  Vito A DePalma ,  William Keith Goebel ,  Scott Eric Tunney

    IPC分类号： B41M5/392 ,  B41J2/325 ,  B41M5/26 ,  B41M5/382 ,  B41M5/398 ,  B41M7/00 ,  H05K3/00 ,  H05K3/06

    CPC分类号： B41M5/38207 ,  B41M5/398 ,  B41M7/0027 ,  H05K3/0079 ,  H05K3/065

    摘要： A process of forming a single color image which has improved abrasion resistance comprising:a) providing a thermal donor element comprising a heat-activatable image layer of a dye or pigment on a support, the image dye or pigment absorbing in the region of from about 300 to about 700 mn;b) providing a receiving element in superposed relationship with the thermal donor element;c) imagewise-exposing the thermal donor element by means of a laser or thermal head, thereby causing a change in the adhesion of at least a portion of the exposed areas of the heat-activatable layer to the receiving element or causing a portion of the exposed areas of the heat-activatable layer to diffuse into the receiver element;d) separating the thermal donor element from the receiver element, thus creating an image layer on either or both of the elements;e) charging either the thermal donor element or the receiver element containing the image layer to a given polarity or applying a voltage across the surface of the element which is attracted to a conductive surface behind the element;f) applying colorless, charged particles to the element containing the image layer which causes them to be electrostatically attracted to the surface of the image layer; andg) heat-fusing the particles to obtain a protective overcoat over the entire surface of the image layer.

    摘要翻译： 一种形成具有改善的耐磨性的单色图像的方法，包括：a）提供包含染料或颜料在载体上的可热激活图像层的热供体元件，所述图像染料或颜料在约 300到700万; b）提供与所述供热体元件重叠关系的接收元件; c）通过激光或热敏头来成像曝光所述供体元件，由此引起所述可热激活层的至少一部分暴露区域与所述接收元件的粘合力的变化， 可热活化层的暴露区域扩散到接收器元件中; d）将热供体元件与接收器元件分离，从而在元件中的一个或两个上产生图像层; e）将包含图像层的热施主元件或接收元件充电至给定的极性，或者将元件的表面上的电压施加一个电压，该电压被吸引到元件后面的导电表面上; f）将无色带电粒子施加到含有图像层的元件上，使其被静电吸引到图像层的表面; 并且g）使所述颗粒热熔融以在所述图像层的整个表面上获得保护性外涂层。

    Forming a VTFT with aligned gate
    6.
    发明授权
    Forming a VTFT with aligned gate 有权
    形成一个VTFT与对齐门

    公开(公告)号：US09153445B2

    公开(公告)日：2015-10-06

    申请号：US14198672

    申请日：2014-03-06

    申请人： Shelby Forrester Nelson ,  Lee William Tutt

    发明人： Shelby Forrester Nelson ,  Lee William Tutt

    IPC分类号： H01L21/336 ,  H01L21/28 ,  H01L29/66

    CPC分类号： H01L29/66742 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/7869

    摘要： A method of forming a gate layer of a thin film transistor includes providing a substrate including a gate structure having a reentrant profile. A conformal conductive inorganic thin film is deposited over the gate structure and in the reentrant profile. A photoresist is deposited on the conformal conductive inorganic thin film over the gate structure and filling the reentrant profile. The photoresist is exposed from a side of the photoresist opposite the substrate allowing the photoresist in the reentrant profile to remain unexposed. The conformal conductive inorganic thin film is etched in areas not protected by the photoresist to form a patterned conductive gate layer located in the reentrant profile of the gate structure.

    摘要翻译： 形成薄膜晶体管的栅极层的方法包括提供包括具有折入轮廓的栅极结构的衬底。 在栅极结构和折入轮廓中沉积保形导电无机薄膜。 光致抗蚀剂沉积在栅极结构上的共形导电无机薄膜上并填充折入轮廓。 光致抗蚀剂从与基底相反的一侧暴露，允许凹凸轮廓中的光致抗蚀剂保持未曝光。 在不被光致抗蚀剂保护的区域中蚀刻共形导电无机薄膜，以形成位于栅极结构的凹槽轮廓中的图案化导电栅极层。

    VTFT INCLUDING OVERLAPPING ELECTRODES
    8.
    发明申请
    VTFT INCLUDING OVERLAPPING ELECTRODES 有权
    VTFT包括重叠电极

    公开(公告)号：US20150255624A1

    公开(公告)日：2015-09-10

    申请号：US14198643

    申请日：2014-03-06

    申请人： Shelby Forrester Nelson ,  Carolyn Rae Ellinger ,  Lee William Tutt

    发明人： Shelby Forrester Nelson ,  Carolyn Rae Ellinger ,  Lee William Tutt

    IPC分类号： H01L29/786 ,  H01L29/10 ,  H01L29/423

    CPC分类号： H01L29/78642 ,  H01L29/1037 ,  H01L29/42384 ,  H01L29/7869

    摘要： A vertical transistor includes a substrate and an electrically conductive gate structure having a top surface and including a reentrant profile. A conformal electrically insulating layer that maintains the reentrant profile is in contact with the electrically conductive gate structure and at least a portion of the substrate. A conformal semiconductor layer that maintains the reentrant profile is in contact with the conformal electrically insulating layer. An electrode that extends into the reentrant profile is in contact with a first portion of the semiconductor layer. Another electrode is vertically spaced apart from the electrode, overlaps a portion of the electrode that extends into the reentrant profile, is in contact with a second portion of the semiconductor material layer over the top surface of the electrically conductive gate structure, and is within the reentrant profile.

    摘要翻译： 垂直晶体管包括基板和具有顶表面并且包括折入轮廓的导电栅极结构。 维持凹凸轮廓的保形电绝缘层与导电栅极结构和衬底的至少一部分接触。 保持凹凸轮廓的保形半导体层与保形电绝缘层接触。 延伸到凹陷轮廓中的电极与半导体层的第一部分接触。 另一个电极与电极垂直间隔开，与延伸到凹陷轮廓中的电极的一部分重叠，与导电栅极结构的顶表面上的半导体材料层的第二部分接触，并且位于 可重入的资料

    Method for preparation of an imaging element
    9.
    发明授权
    Method for preparation of an imaging element 失效
    成像元件的制备方法

    公开(公告)号：US5698366A

    公开(公告)日：1997-12-16

    申请号：US720261

    申请日：1996-09-26

    申请人： Lee William Tutt ,  Gerald Thomas Frizelle ,  Linda Kaszczuk

    发明人： Lee William Tutt ,  Gerald Thomas Frizelle ,  Linda Kaszczuk

    IPC分类号： B41M5/382 ,  B41C1/10 ,  B41M5/24 ,  B41M5/26 ,  B41M5/46 ,  B41M7/00 ,  H05K3/00 ,  B41M1/18 ,  B44C3/02

    CPC分类号： B41M5/24 ,  B41C1/1091 ,  B41M7/0027 ,  H05K3/0002 ,  Y10S430/146

    摘要： Imaging elements are prepared by a method in which an image is generated on a donor element and then transferred from the donor element to a receiver element by the steps of lamination and peeling. The donor element comprises a support, an image-forming layer and optional release and adhesive layers and the image is formed by imagewise laser-induced thermal ablation of the image-forming layer. The method is particularly useful for the preparation of lithographic printing plates as it avoids the need to employ alkaline developing solutions.

    摘要翻译： 成像元件通过以下方法制备，其中在施主元件上产生图像，然后通过层压和剥离的步骤从施主元件转移到接收元件。 施主元件包括载体，图像形成层和任选的释放和粘合剂层，并且通过图像激光诱导的图像形成层的热消融形成图像。 该方法对于制备平版印刷版特别有用，因为它避免了使用碱性显影溶液的需要。

    FORMING A VTFT WITH ALIGNED GATE
    10.
    发明申请
    FORMING A VTFT WITH ALIGNED GATE 有权
    形成具有对准门的VTFT

    公开(公告)号：US20150255292A1

    公开(公告)日：2015-09-10

    申请号：US14198672

    申请日：2014-03-06

    申请人： Shelby Forrester Nelson ,  Lee William Tutt

    发明人： Shelby Forrester Nelson ,  Lee William Tutt

    IPC分类号： H01L21/28 ,  H01L29/66

    CPC分类号： H01L29/66742 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/7869

    摘要： A method of forming a gate layer of a thin film transistor includes providing a substrate including a gate structure having a reentrant profile. A conformal conductive inorganic thin film is deposited over the gate structure and in the reentrant profile. A photoresist is deposited on the conformal conductive inorganic thin film over the gate structure and filling the reentrant profile. The photoresist is exposed from a side of the photoresist opposite the substrate allowing the photoresist in the reentrant profile to remain unexposed. The conformal conductive inorganic thin film is etched in areas not protected by the photoresist to form a patterned conductive gate layer located in the reentrant profile of the gate structure.

    摘要翻译： 形成薄膜晶体管的栅极层的方法包括提供包括具有折入轮廓的栅极结构的衬底。 在栅极结构和折入轮廓中沉积保形导电无机薄膜。 光致抗蚀剂沉积在栅极结构上的共形导电无机薄膜上并填充折入轮廓。 光致抗蚀剂从与基底相反的一侧暴露，允许凹凸轮廓中的光致抗蚀剂保持未曝光。 在不被光致抗蚀剂保护的区域中蚀刻共形导电无机薄膜，以形成位于栅极结构的凹槽轮廓中的图案化导电栅极层。