Tunable terahertz radiation source
    1.
    发明授权
    Tunable terahertz radiation source 有权
    可调太赫兹辐射源

    公开(公告)号:US08633472B2

    公开(公告)日:2014-01-21

    申请号:US12541073

    申请日:2009-09-14

    IPC分类号: H01L27/18

    CPC分类号: H01L39/225 H03B15/00

    摘要: Terahertz radiation source and method of producing terahertz radiation, said source comprising a junction stack, said junction stack comprising a crystalline material comprising a plurality of self-synchronized intrinsic Josephson junctions; an electrically conductive material in contact with two opposing sides of said crystalline material; and a substrate layer disposed upon at least a portion of both the crystalline material and the electrically-conductive material, wherein the crystalline material has a c-axis which is parallel to the substrate layer, and wherein the source emits at least 1 mW of power.

    摘要翻译: 太赫兹辐射源和产生太赫兹辐射的方法,所述源包括结堆叠,所述接合堆叠包括包含多个自同步内在约瑟夫逊结的结晶材料; 与所述结晶材料的两个相对侧接触的导电材料; 以及设置在所述结晶材料和所述导电材料两者的至少一部分上的基底层,其中所述结晶材料具有平行于所述基底层的c轴,并且其中所述源发射至少1mW的功率 。

    TUNABLE TERAHERTZ RADIATION SOURCE
    2.
    发明申请
    TUNABLE TERAHERTZ RADIATION SOURCE 有权
    TUNABLE TERAHERTZ辐射源

    公开(公告)号:US20110062423A1

    公开(公告)日:2011-03-17

    申请号:US12541073

    申请日:2009-09-14

    IPC分类号: H01L39/22

    CPC分类号: H01L39/225 H03B15/00

    摘要: Terahertz radiation source and method of producing terahertz radiation, said source comprising a junction stack, said junction stack comprising a crystalline material comprising a plurality of self-synchronized intrinsic Josephson junctions; an electrically conductive material in contact with two opposing sides of said crystalline material; and a substrate layer disposed upon at least a portion of both the crystalline material and the electrically-conductive material, wherein the crystalline material has a c-axis which is parallel to the substrate layer, and wherein the source emits at least 1 mW of power.

    摘要翻译: 太赫兹辐射源和产生太赫兹辐射的方法,所述源包括结堆叠,所述接合堆叠包括包含多个自同步内在约瑟夫逊结的结晶材料; 与所述结晶材料的两个相对侧接触的导电材料; 以及设置在所述结晶材料和所述导电材料两者的至少一部分上的基底层,其中所述结晶材料具有平行于所述基底层的c轴,并且其中所述源发射至少1mW的功率 。

    COATED CONDUCTOR ARCHITECTURE
    3.
    发明申请
    COATED CONDUCTOR ARCHITECTURE 审中-公开
    涂层导体架构

    公开(公告)号:US20110111964A1

    公开(公告)日:2011-05-12

    申请号:US12850311

    申请日:2010-08-04

    IPC分类号: H01L39/12 B32B15/04 B32B9/00

    CPC分类号: H01L39/2461 Y10T428/265

    摘要: A simplified architecture for a superconducting coated conductor is provided and includes a substrate, a layer of titanium nitride directly upon the substrate, the layer of titanium nitride deposited by ion beam assisted deposition (IBAD), a layer of a buffer material having chemical and structural compatibility with said layer of titanium nitride, the buffer material layer directly upon the IBAD-titanium nitride layer, and a layer of a high temperature superconductive material such as YBCO.

    摘要翻译: 提供了一种用于超导涂层导体的简化体系结构,其中包括基片,直接在基片上的氮化钛层,通过离子束辅助沉积(IBAD)沉积的氮化钛层,具有化学和结构的缓冲材料层 与所述氮化钛层的相容性,直接在IBAD-氮化钛层上的缓冲材料层和诸如YBCO的高温超导材料层。

    High temperature superconducting thick films
    7.
    发明申请
    High temperature superconducting thick films 审中-公开
    高温超导厚膜

    公开(公告)号:US20100009176A1

    公开(公告)日:2010-01-14

    申请号:US11094742

    申请日:2005-03-29

    IPC分类号: B32B15/04

    摘要: An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, (generally the inert oxide material layer has a smooth surface, i.e., a RMS roughness of less than about 2 nm), a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer is provided together with additional layers such as at least one layer of a buffer material upon the oriented cubic oxide material layer or a HTS top-layer of YBCO directly upon the oriented cubic oxide material layer. With a HTS top-layer of YBCO upon at least one layer of a buffer material in such an article, Jc's of 1.4×106 A/cm2 have been demonstrated with projected Ic's of 210 Amperes across a sample 1 cm wide.

    摘要翻译: 包括衬底,在衬底表面上的惰性氧化物材料层(通常惰性氧化物材料层具有光滑表面,即小于约2nm的RMS粗糙度)的物品,非晶态层 氧化物或氧氮化物材料在惰性氧化物材料层上,在非晶形氧化物材料层上具有岩盐状结构的定向立方氧化物材料层与另外的层一起提供,例如至少一层缓冲材料层 定向的立方氧化物材料层或YBCO的HTS顶层直接在取向的立方氧化物材料层上。 在这种制品中至少一层缓冲材料上具有HTS顶层的YBCO,已经证明了Jc为1.4×10 6 A / cm 2,并且在1cm宽的样品上已经证明了具有210安培的投影Ic。

    Substrate structure for growth of highly oriented and/or epitaxial layers thereon
    8.
    发明授权
    Substrate structure for growth of highly oriented and/or epitaxial layers thereon 有权
    用于在其上生长高定向和/或外延层的衬底结构

    公开(公告)号:US06921741B2

    公开(公告)日:2005-07-26

    申请号:US10359808

    申请日:2003-02-07

    摘要: A composite substrate structure including a substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or crystalline metal oxynitride material layer is provided together with additional layers such as one or more layers of a buffer material upon the oriented cubic oxide material layer.Jc′s of 2.3×106 A/cm2 have been demonstrated with projected Ic′s of 320 Amperes across a sample 1 cm wide for a superconducting article including a flexible polycrystalline metallic substrate, an inert oxide material layer upon the surface of the flexible polycrystalline metallic substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the layer of the inert oxide material, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or crystalline metal oxynitride material layer, a layer of a buffer material upon the oriented cubic oxide material layer, and, a top-layer of a high temperature superconducting material upon the layer of a buffer material.

    摘要翻译: 一种复合衬底结构,包括衬底,结晶金属氧化物层或晶体金属氧氮化物材料层,在结晶金属氧化物或结晶金属氧氮化物材料上具有岩盐状结构的定向立方氧化物材料层 层与诸如一层或多层缓冲材料的附加层一起设置在定向立方氧化物材料层上。 已经证明具有2.3×10 6 /厘米2以上的J C 2以及/ 对于包括柔性多晶金属基底的超导物品,在柔性多晶金属基底的表面上的惰性氧化物材料层,在该层上的结晶金属氧化物或结晶金属氮氧化物材料的层,横跨样品1cm宽的320安培 惰性氧化物材料,在结晶金属氧化物或结晶金属氧氮化物材料层上具有岩盐状结构的定向立方氧化物材料层,定向立方氧化物材料层上的缓冲材料层,以及 在缓冲材料层上的高温超导材料的顶层。