摘要:
Arrangements using air trench cladding enables minimization of the evanescent tail to suppress light coupling to radiation modes, resulting in low-loss bends and splitters. Structures including sharp bends and T-splitters without transmission loss, crossings without crosstalk, and couplers from/to fibers and with out-of-plane waveguides without substantial loss are provided with such air trench claddings. Air trench sidewall cladding of waveguides pushes evanescent tails toward top and bottom claddings to enhance coupling between vertically positioned waveguides. Fabrication processes using wafer bonding technology are also provided.
摘要:
An optical cavity structure for bending optical signals is provided. The optical cavity structure includes an input port for receiving input optical signals from a first waveguide. The optical cavity structure also includes an interconnecting structure that receives said input optical signals and interconnects said first waveguide to a second waveguide, the interconnecting structure further includes at least four straight edges that orthogonal and of a finite width. The optical cavity structure further includes an output port coupled to the interconnecting structure for providing the second waveguide with the input optical signals. Further, the optical cavity structure may be used to create three dimensional splitter devices and resonators.
摘要:
An on-chip silicon-based optical coupler used to guide light from an optical fiber to a waveguide. The incoming wave is confined vertically by stacks of graded index materials. In the lateral direction, a linear taper formed by etched holes or trenches confines the wave.
摘要:
An array waveguide grating structure includes an input MMI that receives an input optical signal and splits the optical signal into a plurality of signals, each having a defined wavelength. A plurality of input arrayed waveguide structures receive the plurality of signals such that each of the waveguide structures receives one of the plurality of signals. The input MMI, the plurality of arrayed waveguide structures, and the output waveguide are configured using HIC optics.
摘要:
A system includes a plurality of AWGs, wherein one of the AWGs receives an input signal. The AWGS are divided amongst a first selective group of the AWGs providing even-numbered channel outputs associated with an even-numbered selection of the input signal, and a second selective group of the AWGs providing odd-numbered channel outputs associated with an odd-numbered selection of the input signal. An interleaver arrangement includes a plurality of ring structures so as to provide appropriate filtering characteristics for the even-numbered channel outputs and odd-numbered channel outputs.
摘要:
An optical device includes at least two photonic bandgap crystal (PBG) stacks that are each comprised of alternating layers of high and low index materials. A defect region is formed in a cavity region between the at least two photonic bandgap crystal stacks so as to provide the properties needed to reflect light received by the optical device.
摘要:
A waveguide-semiconductor coupling device includes a waveguide structure that includes a multimode interferometer (MMI) structure so as to minimize the reflections of TE modes in the coupling device. A mesa structure is coupled to the waveguide structure so as to minimize the reflections of TM modes in the coupling device.
摘要:
A phototransistor includes an emitter and a base that comprises Ge. A collector comprises Si. The base, emitter, and collector form at least one Si/Ge heterojunction allowing the unpinning of Fermi energy level (EF) of the phototransistor.
摘要:
The light-guiding structure includes a waveguide structure that comprises a substrate and a low refractive index underclad material. The waveguide structure is oxidized to form an oxidized layer on a surface of the waveguide structure. The oxidized layer is isotropically etched after the reaction-limited oxidation regime is approaching the diffusion-limited regime and repeatedly oxidized and etched so that the waveguide structure is continuously oxidized in the reaction-limited regime, reducing the overall time of oxidation and volume of oxidized material so that the waveguide structure has its sidewall roughness reduced efficiently enabling high transmission rates of guided light.
摘要:
A photodetector device includes a plurality of Ge epilayers that are grown on a substrate and annealed in a defined temperature range. The Ge epilayers form a tensile strained Ge layer that allows the photodetector device to operate efficiently in the C-band and L-band.