摘要:
A memory device includes isolation devices located between-memory cells. A plurality of isolation lines connects the isolation devices to a positive voltage during normal operations but still keeps the isolation devices in the off state to provide isolation between the memory cells. A current control circuit is placed between the isolation lines and a power node for reducing a current flowing between the isolation lines and the power node in case a deflect occurs at any one of isolation devices.
摘要:
A memory device includes isolation devices located between memory cells. A plurality of isolation lines connects the isolation devices to a positive voltage during normal operations but still keeps the isolation devices in the off state to provide isolation between the memory cells. A current control circuit is placed between the isolation lines and a power node for reducing a current flowing between the isolation lines and the power node in case a deflect occurs at any one of isolation devices.
摘要:
Techniques for reducing gate induced drain leakage (GIDL) in memory devices utilizing negative wordline architectures. More specifically, a method and apparatus are provided to determine whether any of the word lines in a section of a memory array are active. If any one of the plurality of word lines is active, each of the inactive word lines in the section are coupled to a negative voltage level. If none of the plurality of word lines is active, each of the plurality of word lines is coupled to ground to reduce GIDL.
摘要:
Techniques for reducing gate induced drain leakage (GIDL) in memory devices utilizing negative wordline architectures. More specifically, a method and apparatus are provided to determine whether any of the word lines in a section of a memory array are active. If any one of the plurality of word lines is active, each of the inactive word lines in the section are coupled to a negative voltage level. If none of the plurality of word lines is active, each of the plurality of word lines is coupled to ground to reduce GIDL.
摘要:
A method and apparatus is provided for reducing the current in a memory device. Peripheral device control signals are translated to the wordline off voltage level, such as a negative wordline voltage. The translated signals prevent the peripheral devices from conducting current in the wordline off mode, even if a wordline-to-digitline short should occur. The control signals may include a column select signal for a column select device and an active pull-up signal for a sense amplifier, among others. Additionally, an equalization circuit having high and low resistance components is provided for the memory device. The equalization circuit limits current, even if a wordline-to-digitline short occurs.
摘要:
A method and apparatus is provided for reducing the current in a memory device. Peripheral device control signals are translated to the wordline off voltage level, such as a negative wordline voltage. The translated signals prevent the peripheral devices from conducting current in the wordline off mode, even if a wordline-to-digitline short should occur. The control signals may include a column select signal for a column select device and an active pull-up signal for a sense amplifier, among others. Additionally, an equalization circuit having high and low resistance components is provided for the memory device. The equalization circuit limits current, even if a wordline-to-digitline short occurs.
摘要:
A power system comprising: a primary power source in electrical communication with a electrolysis cell, wherein the electrolysis cell is in electrical communication with a bus; a secondary power source in electrical communication with the bus, wherein the secondary power source comprises an electrochemical system including a fuel cell. The system further includes: a controller electrically disposed between and in operable communication with the bus and the electrolysis cell, and electrically disposed between and in communication with the bus and the secondary power source. The controller monitors the primary power source, initiates powering by the bridge power source when the primary power source exhibits selected characteristics, initiates the secondary power source when the electrolysis cell is depleted exceeding a first selected threshold, and initiates interruption of powering by the secondary power source.
摘要:
A device for the non-invasive treatment of a vascular defect. The device includes at least one occlusive member having a first unexpanded configuration and a second expanded configuration and at least one securement member for securing the vaso-occlusive device to a support structure at the location of the vascular defect.
摘要:
A child restraint system and a method for monitoring installation of the child restraint system are provided. The child restraint system includes a child seat configured to receive a child occupant. The child seat has at least a first seat belt guide member configured to engage a vehicle seat belt webbing for securing the child seat to a vehicle seat. The child restraint system further includes a first sensor coupled to the first seat belt guide member. The first sensor is configured to output a first signal indicative of an amount of tension being applied to the vehicle seat belt webbing. The child restraint system further includes a controller coupled to the child seat configured to receive the first signal and to compute a first tension value based on the first signal. The controller further is configured to induce a first device disposed on the child seat to indicate when the first tension value is less than a predetermined tension value.
摘要:
An endoprosthesis for deployment within a body passage includes a framework and a metallic film, which can circumferentially surround the framework or be surrounded by the framework. The framework and metallic film can be attached without using a third material, e.g., without sewing. The framework can define a circumferential recess along at least a portion of its length and circumference. The recess accommodates at least a portion of the metallic film therein.