公开(公告)号：US09184058B2

公开(公告)日：2015-11-10

申请号：US14139582

申请日：2013-12-23

Applicant: Micron Technology, Inc. ,  Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials LLC

Inventor： William R. Brown ,  Adam Olson ,  Kaveri Jain ,  Ho Seop Eom ,  Xue Gloria Chen ,  Nik Mirin ,  Dan Millward ,  Peter Trefonas, III ,  Phillip Dene Hustad ,  Jong Keun Park ,  Christopher Nam Lee

IPC: H01L21/311 ,  H01L21/302 ,  H01L21/461 ,  H01L21/308

CPC classification number: H01L21/0274 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/76816

Abstract: Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.

Abstract translation: 一些实施例包括形成图案的方法。 在材料上形成第一个掩模。 第一掩模具有在其中延伸的特征并且限定第一图案。 第一种模式在特征分布上具有第一级的均匀性。 在第一掩模之间并且在特征内形成刷层以使特征变窄以从第一掩模创建第二掩模。 所述第二掩模具有比所述第一级别的均匀性更窄的所述窄化特征的第二级别的均匀性。 图案从第二个掩模转移到材料中。

公开(公告)号：US20130316153A1

公开(公告)日：2013-11-28

申请号：US13956211

申请日：2013-07-31

Applicant: Micron Technology, Inc.

Inventor： Nik Mirin ,  Tsai-Yu Huang ,  Vishwanath Bhat ,  Chris M. Carlson ,  Vassil N. Antonov

IPC: C01G23/04 ,  H05K1/02 ,  H01L23/373

CPC classification number: H01L21/02186 ,  C01G23/04 ,  C23C16/405 ,  C23C16/45534 ,  H01G4/085 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/02233 ,  H01L21/02244 ,  H01L21/28556 ,  H01L21/32051 ,  H01L23/367 ,  H01L23/3735 ,  H01L23/3736 ,  H01L27/10808 ,  H01L27/1085 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/60 ,  H01L2924/0002 ,  H05K1/0203 ,  Y10T428/24802 ,  Y10T428/24975 ,  H01L2924/00

Abstract: Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks.

Abstract translation: 一些实施方案包括形成金红石型氧化钛的方法。 可以形成单层的氮化钛。 然后氮化钛单层可以在小于或等于约550℃的温度下被氧化，以将其转化为金红石型氧化钛的单层。 一些实施方案包括形成具有金红石型氧化钛电介质的电容器并且具有至少一个包含氮化钛的电极的方法。 一些实施方案包括含有氮化钛和金红石型氧化钛的导热叠层，并且一些实施方案包括形成这种叠层的方法。

公开(公告)号：US09418848B2

公开(公告)日：2016-08-16

申请号：US14873089

申请日：2015-10-01

Applicant: Micron Technology, Inc. ,  Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials LLC

Inventor： William R. Brown ,  Adam Olson ,  Kaveri Jain ,  Ho Seop Eom ,  Xue Gloria Chen ,  Nik Mirin ,  Dan Millward ,  Peter Trefonas, III ,  Phillip Dene Hustad ,  Jong Keun Park ,  Christopher Nam Lee

IPC: H01L21/311 ,  H01L21/302 ,  H01L21/461 ,  H01L21/027 ,  H01L21/308 ,  H01L21/033 ,  H01L21/768

CPC classification number: H01L21/0274 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/76816

Abstract: Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.

Abstract translation: 一些实施例包括形成图案的方法。 在材料上形成第一个掩模。 第一掩模具有在其中延伸的特征并且限定第一图案。 第一种模式在特征分布上具有第一级的均匀性。 在第一掩模之间并且在特征内形成刷层以使特征变窄以从第一掩模产生第二掩模。 所述第二掩模具有比所述第一级别的均匀性更窄的所述窄化特征的第二级别的均匀性。 图案从第二个掩模转移到材料中。

公开(公告)号：US20160027638A1

公开(公告)日：2016-01-28

申请号：US14873089

申请日：2015-10-01

Applicant: Micron Technology, Inc. ,  Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials LLC

Inventor： William R. Brown ,  Adam Olson ,  Kaveri Jain ,  Ho Seop Eom ,  Xue Gloria Chen ,  Nik Mirin ,  Dan Millward ,  Peter Trefonas, III ,  Phillip Dene Hustad ,  Jong Keun Park ,  Christopher Nam Lee

IPC: H01L21/027 ,  H01L21/033

CPC classification number: H01L21/0274 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/76816

Abstract: Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.

公开(公告)号：US10008381B2

公开(公告)日：2018-06-26

申请号：US14929070

申请日：2015-10-30

Applicant: Micron Technology, Inc.

Inventor： Nik Mirin ,  Tsai-Yu Huang ,  Vishwanath Bhat ,  Chris M. Carlson ,  Vassil N. Antonov

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01G4/08 ,  H01G4/12 ,  H01G4/33 ,  H01L27/108 ,  H01L49/02 ,  C01G23/04 ,  H01L23/373 ,  H05K1/02 ,  H01L21/285 ,  H01L21/3205 ,  H01L23/367

CPC classification number: H01L21/02186 ,  C01G23/04 ,  C23C16/405 ,  C23C16/45534 ,  H01G4/085 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/02233 ,  H01L21/02244 ,  H01L21/28556 ,  H01L21/32051 ,  H01L23/367 ,  H01L23/3735 ,  H01L23/3736 ,  H01L27/10808 ,  H01L27/1085 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/60 ,  H01L2924/0002 ,  H05K1/0203 ,  Y02P20/129 ,  Y10T428/24802 ,  Y10T428/24975 ,  H01L2924/00

Abstract: Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks.

公开(公告)号：US20160056038A1

公开(公告)日：2016-02-25

申请号：US14929070

申请日：2015-10-30

Applicant: Micron Technology, Inc.

Inventor： Nik Mirin ,  Tsai-Yu Huang ,  Vishwanath Bhat ,  Chris M. Carlson ,  Vassil N. Antonov

IPC: H01L21/02 ,  H01L23/367 ,  H01L49/02 ,  H01L21/3205 ,  H01L27/108 ,  H01L23/373 ,  H01L21/285

CPC classification number: H01L21/02186 ,  C01G23/04 ,  C23C16/405 ,  C23C16/45534 ,  H01G4/085 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/02233 ,  H01L21/02244 ,  H01L21/28556 ,  H01L21/32051 ,  H01L23/367 ,  H01L23/3735 ,  H01L23/3736 ,  H01L27/10808 ,  H01L27/1085 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/60 ,  H01L2924/0002 ,  H05K1/0203 ,  Y10T428/24802 ,  Y10T428/24975 ,  H01L2924/00

Abstract: Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks.

Abstract translation: 一些实施方案包括形成金红石型氧化钛的方法。 可以形成单层的氮化钛。 氮化钛单层然后可以在小于或等于约550℃的温度下被氧化，以将其转化为金红石型氧化钛的单层。 一些实施方案包括形成具有金红石型氧化钛电介质的电容器并且具有至少一个包含氮化钛的电极的方法。 一些实施方案包括含有氮化钛和金红石型氧化钛的导热叠层，并且一些实施方案包括形成这种叠层的方法。

公开(公告)号：US09209013B2

公开(公告)日：2015-12-08

申请号：US13956211

申请日：2013-07-31

Applicant: Micron Technology, Inc.

Inventor： Nik Mirin ,  Tsai-Yu Huang ,  Vishwanath Bhat ,  Chris M. Carlson ,  Vassil N. Antonov

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01G4/08 ,  H01G4/12 ,  H01G4/33 ,  H01L27/108 ,  H01L49/02 ,  C01G23/04 ,  H01L23/373 ,  H05K1/02

CPC classification number: H01L21/02186 ,  C01G23/04 ,  C23C16/405 ,  C23C16/45534 ,  H01G4/085 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/02233 ,  H01L21/02244 ,  H01L21/28556 ,  H01L21/32051 ,  H01L23/367 ,  H01L23/3735 ,  H01L23/3736 ,  H01L27/10808 ,  H01L27/1085 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/60 ,  H01L2924/0002 ,  H05K1/0203 ,  Y10T428/24802 ,  Y10T428/24975 ,  H01L2924/00

Abstract: Some embodiments include methods of forming rutile-type titanium oxide. A monolayer of titanium nitride may be formed. The monolayer of titanium nitride may then be oxidized at a temperature less than or equal to about 550° C. to convert it into a monolayer of rutile-type titanium oxide. Some embodiments include methods of forming capacitors that have rutile-type titanium oxide dielectric, and that have at least one electrode comprising titanium nitride. Some embodiments include thermally conductive stacks that contain titanium nitride and rutile-type titanium oxide, and some embodiments include methods of forming such stacks.

Abstract translation: 一些实施方案包括形成金红石型氧化钛的方法。 可以形成单层的氮化钛。 然后氮化钛单层可以在小于或等于约550℃的温度下被氧化，以将其转化为金红石型氧化钛的单层。 一些实施方案包括形成具有金红石型氧化钛电介质的电容器并且具有至少一个包含氮化钛的电极的方法。 一些实施方案包括含有氮化钛和金红石型氧化钛的导热叠层，并且一些实施方案包括形成这种叠层的方法。

公开(公告)号：US20150179467A1

公开(公告)日：2015-06-25

申请号：US14139582

申请日：2013-12-23

Applicant: Micron Technology, Inc. ,  Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC

Inventor： William R. Brown ,  Adam Olson ,  Kaveri Jain ,  Ho Seop Eom ,  Xue Gloria Chen ,  Nik Mirin ,  Dan Millward ,  Peter Trefonas, III ,  Phillip Dene Hustad ,  Jong Keun Park ,  Christopher Nam Lee

IPC: H01L21/308

CPC classification number: H01L21/0274 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/76816

Abstract: Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.

Abstract translation: 一些实施例包括形成图案的方法。 在材料上形成第一个掩模。 第一掩模具有在其中延伸的特征并且限定第一图案。 第一种模式在特征分布上具有第一级的均匀性。 在第一掩模之间并且在特征内形成刷层以使特征变窄以从第一掩模创建第二掩模。 所述第二掩模具有比所述第一级别的均匀性更窄的所述窄化特征的第二级别的均匀性。 图案从第二个掩模转移到材料中。