公开(公告)号：US20030010992A1

公开(公告)日：2003-01-16

申请号：US09904841

申请日：2001-07-16

Applicant: MOTOROLA, INC.

Inventor： Robert Lempkowski ,  Daniel Gamota

IPC: H01L027/15

CPC classification number: H01S5/026 ,  H01L27/15 ,  H01S5/021

Abstract: A semiconductor structure for providing cross-point switch functionality includes a monocrystalline silicone substrate, and an amorphous oxide material overlying the monocrystalline silicone substrate. A monocrystalline perovskite oxide material overlies the amorphous oxide material, and a monocrystalline compound semiconductor material overlies the monocrystalline perovskite oxide material. The monocrystalline compound semiconductor material includes an optical source component operable to generate a radiant energy transmission. A diffraction grating is optically coupled with the optical source component and has a configuration for passing the radiant energy transmission in a predetermined radiant energy intensity pattern, forming a plurality of replications of the radiant energy transmission. The semiconductor structure further includes at least one optical switch component optically coupled to the diffraction grating, where each optical switch component corresponds to at least one of the replicated radiant energy transmissions, and has a first state for passing the at least one replicated radiant energy transmission, and a second state prohibiting passage of the at least one replicated radiant energy transmission.

Abstract translation: 用于提供交叉点开关功能的半导体结构包括单晶硅衬底和覆盖单晶硅衬底的无定形氧化物材料。 单晶钙钛矿氧化物材料覆盖无定形氧化物材料，单晶化合物半导体材料覆盖单晶钙钛矿氧化物材料。 单晶化合物半导体材料包括可用于产生辐射能传输的光源组件。 衍射光栅与光源部件光学耦合，并且具有用于以预定的辐射能量强度图案传递辐射能量传输的结构，形成辐射能传输的多个重复。 半导体结构还包括光学耦合到衍射光栅的至少一个光学开关部件，其中每个光学开关部件对应于复制的辐射能量传输中的至少一个，并且具有用于使至少一个复制的辐射能量传输 以及禁止所述至少一个复制的辐射能量传输的通过的第二状态。

公开(公告)号：US20040232430A1

公开(公告)日：2004-11-25

申请号：US10878414

申请日：2004-06-29

Applicant: Motorola, Inc.

Inventor： Robert Lempkowski ,  Marc Chason

IPC: H01L033/00

CPC classification number: H01L21/8221 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/0688 ,  H01L27/15 ,  H01L29/812 ,  H01L2924/00011 ,  H01S5/021 ,  H01S5/0218 ,  H01S5/0261 ,  H01S5/183 ,  H01S2301/173 ,  H01L2224/80001

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. A high quality layer of compound semiconductor material is used to form a source component and a receiver component that are interconnected with an antenna and each other within a semiconductor structure that can detect a parameter, such as the speed, of an object.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 使用高质量的化合物半导体材料层来形成源天线组件和接收器组件，该组件和接收器组件可以在半导体结构内互相连接，该半导体结构可以检测物体的诸如速度的参数。

公开(公告)号：US20030034491A1

公开(公告)日：2003-02-20

申请号：US09928356

申请日：2001-08-14

Applicant: Motorola, Inc.

Inventor： Robert Lempkowski ,  Marc Chason

IPC: H01L029/04

CPC classification number: H01L21/8221 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/0688 ,  H01L27/15 ,  H01L29/812 ,  H01L2924/00011 ,  H01S5/021 ,  H01S5/0218 ,  H01S5/0261 ,  H01S5/183 ,  H01S2301/173 ,  H01L2224/80001

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. A high quality layer of compound semiconductor material is used to form a source component and a receiver component that are interconnected with an antenna and each other within a semiconductor structure that can detect a parameter, such as the speed, of an object.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 使用高质量的化合物半导体材料层来形成源天线组件和接收器组件，该组件和接收器组件可以在半导体结构内互相连接，该半导体结构可以检测物体的诸如速度的参数。

公开(公告)号：US20030021520A1

公开(公告)日：2003-01-30

申请号：US09911492

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Aroon Tungare ,  Keryn Lian ,  Robert Lempkowski ,  Barbara Foley Barenburg

IPC: G02B006/35 ,  G02B006/12

CPC classification number: G02B6/3518 ,  G02B6/3578 ,  G02B6/3598 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521

Abstract: A structure for an optical switch includes a reflective layer formed over a high quality epitaxial layer of piezoelectric compound semiconductor materials grown over a monocrystalline substrate, such as a silicon wafer. The piezoelectric layer can be activated to alter the path of light incident on the reflective layer. A compliant substrate is provided for growing the monocrystalline compound semiconductor layer. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying piezoelectric monocrystalline material layer.

Abstract translation: 光开关的结构包括在单晶衬底（例如硅晶片）上生长的压电化合物半导体材料的高质量外延层上形成的反射层。 可以激活压电层以改变入射在反射层上的光的路径。 提供了用于生长单晶化合物半导体层的柔性衬底。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的压电单晶材料层晶格匹配。

公开(公告)号：US20040223689A1

公开(公告)日：2004-11-11

申请号：US10431735

申请日：2003-05-08

Applicant: MOTOROLA, INC.

Inventor： Robert Lempkowski ,  Tomasz L. Klosowiak ,  Huinan Yu

IPC: G02B006/26

CPC classification number: G02B6/3604 ,  H04M1/0216

Abstract: An optical communication between a first and second body portion connected by a rotatable member is established. A first optical fiber is attached to the first body portion and a second optical fiber is attached to the second body portion in a manner to allow the first and second optical fibers to be co-aligned with each other and with the rotatable member axis of rotation within the rotatable member. An optical signal emitted from a source on an input circuit board on the first body will transfer through the first optical fiber and be transmitted from the first fiber to the second optical fiber while concentrically aligned within the rotatable member, establishing optical communication between the source on the first body portion and a display device on the second body portion.

Abstract translation: 建立由可旋转构件连接的第一和第二主体部分之间的光学连接。 第一光纤被附接到第一主体部分，并且第二光纤以允许第一和第二光纤彼此共同对准并且具有可旋转构件的旋转轴线的方式附接到第二主体部分 在可旋转构件内。 从第一主体上的输入电路板上的源发射的光信号将通过第一光纤传输，并从第一光纤传输到第二光纤同心对准在可旋转部件内，建立光源之间的光通信 第一主体部分和第二主体部分上的显示装置。

公开(公告)号：US20040208423A1

公开(公告)日：2004-10-21

申请号：US10413644

申请日：2003-04-15

Applicant: Motorola, Inc.

Inventor： Tomasz Klosowiak ,  Robert Lempkowski ,  Keryn K. Lian

IPC: G02B006/35

CPC classification number: G02B6/3584 ,  G02B6/3508 ,  G02B6/353 ,  G02B6/355 ,  G02B6/3552 ,  G02B6/357 ,  G02B6/3594

Abstract: A mesoscale micro electro-mechanical systems (MEMS) structure comprises an optical interface member (18) that moves with a pivoting member (15). Such movement serves to occlude and/or to complete an optical signal pathway (19).

Abstract translation: 中尺度微电子机械系统（MEMS）结构包括与枢转构件（15）一起移动的光学接口构件（18）。 这种移动用于闭塞和/或完成光信号通路（19）。

公开(公告)号：US20030015705A1

公开(公告)日：2003-01-23

申请号：US09905980

申请日：2001-07-17

Applicant: Motorola, Inc.

Inventor： Marc Chason ,  Daniel Gamota ,  Robert Lempkowski

IPC: H01L029/04 ,  H01L031/036

CPC classification number: H01L27/142 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L27/14 ,  H01S5/021 ,  H01S5/0261 ,  H01S5/042 ,  H01S2301/173 ,  Y02E10/50

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。

公开(公告)号：US20040232431A1

公开(公告)日：2004-11-25

申请号：US10878354

申请日：2004-06-29

Applicant: MOTOROLA, INC.

Inventor： Robert Lempkowski ,  Daniel Gamota

IPC: H01L031/12 ,  H01L021/00

CPC classification number: H01S5/026 ,  H01L27/15 ,  H01S5/021

Abstract: A semiconductor structure for providing cross-point switch functionality includes a monocrystalline silicone substrate, and an amorphous oxide material overlying the monocrystalline silicone substrate. A monocrystalline perovskite oxide material overlies the amorphous oxide material, and a monocrystalline compound semiconductor material overlies the monocrystalline perovskite oxide material. The monocrystalline compound semiconductor material includes an optical source component operable to generate a radiant energy transmission. A diffraction grating is optically coupled with the optical source component and has a configuration for passing the radiant energy transmission in a predetermined radiant energy intensity pattern, forming a plurality of replications of the radiant energy transmission. The semiconductor structure further includes at least one optical switch component optically coupled to the diffraction grating, where each optical switch component corresponds to at least one of the replicated radiant energy transmissions, and has a first state for passing the at least one replicated radiant energy transmission, and a second state prohibiting passage of the at least one replicated radiant energy transmission.

Abstract translation: 用于提供交叉点开关功能的半导体结构包括单晶硅衬底和覆盖单晶硅衬底的无定形氧化物材料。 单晶钙钛矿氧化物材料覆盖无定形氧化物材料，单晶化合物半导体材料覆盖单晶钙钛矿氧化物材料。 单晶化合物半导体材料包括可用于产生辐射能传输的光源组件。 衍射光栅与光源部件光学耦合，并且具有用于以预定的辐射能量强度图案传递辐射能量传输的结构，形成辐射能传输的多个重复。 半导体结构还包括光学耦合到衍射光栅的至少一个光学开关部件，其中每个光学开关部件对应于复制的辐射能量传输中的至少一个，并且具有用于使至少一个复制的辐射能量传输 以及禁止所述至少一个复制的辐射能量传输的通过的第二状态。

公开(公告)号：US20040120649A1

公开(公告)日：2004-06-24

申请号：US10324902

申请日：2002-12-20

Applicant: MOTOROLA, INC.

Inventor： Tomasz Klosowiak ,  Lawrence Lach ,  Robert Lempkowski

IPC: G02B006/30

CPC classification number: G02B6/30 ,  G02B6/2826

Abstract: An optical communication between a waveguide core of an optical waveguide and a fiber core of an optical fiber is established. The fiber core is embedded within a fiber cladding with a portion of the fiber core being exposed through a section of the fiber cladding. The waveguide core is composed of refractive index material which is modified by heat or chemicals to facilitate a coupling of the waveguide core and the exposed section of the fiber core upon a pressing of the exposed section into the heated or chemically treated waveguide core.

Abstract translation: 建立光波导的波导芯与光纤的光纤芯之间的光通信。 纤维芯被嵌入光纤包层中，其中纤维芯的一部分通过纤维包层的一部分露出。 波导芯由折射率材料组成，折射率材料由热或化学物质改性，以便在将暴露部分压入加热或化学处理的波导芯中时促进波导芯与纤维芯的暴露部分的耦合。

公开(公告)号：US20030027361A1

公开(公告)日：2003-02-06

申请号：US09921900

申请日：2001-08-06

Applicant: MOTOROLA, INC.

Inventor： Robert Lempkowski

IPC: H01L021/00 ,  H01L021/31 ,  H01L021/469

CPC classification number: H01L21/8258 ,  H01Q21/24 ,  H04B14/008

Abstract: Polarization modulator devices can be formed to take advantage of multi-layered semiconductor structures. High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

Abstract translation: 可以形成极化调制器器件以利用多层半导体结构。 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。