公开(公告)号：US20030022414A1

公开(公告)日：2003-01-30

申请号：US09911627

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Keryn Lian ,  Marc Chason ,  Daniel Gamota ,  Barbara Foley Barenburg

IPC: H01L033/00

CPC classification number: H01L27/144 ,  H01L27/15 ,  H01S5/021 ,  H01S5/0261 ,  H01S5/183 ,  H01S2301/173

Abstract: A opto-electronic semiconductor structure having an electrochromic switch includes a monocrystalline silicon substrate and an amorphous oxide material overlying the monocrystalline silicon substrate. A monocrystalline perovskite oxide material overlies the amorphous oxide material and a monocrystalline compound semiconductor material overlies the monocrystalline perovskite oxide material. An optical source component that is adapted to transmit radiant energy may be formed within the monocrystalline compound semiconductor material. An electrochromic switch may be optically coupled to the optical source component. An optical detector component that is adapted to receive radiant energy may be formed within the monocrystalline compound semiconductor material. An electrochromic switch may be optically coupled to the optical detector component.

Abstract translation: 具有电致变色开关的光电子半导体结构包括单晶硅衬底和覆盖在单晶硅衬底上的无定形氧化物材料。 单晶钙钛矿氧化物材料覆盖无定形氧化物材料，单晶化合物半导体材料覆盖在单晶钙钛矿氧化物材料上。 可以在单晶化合物半导体材料内形成适于透射辐射能的光源组件。 电致变色开关可以光耦合到光源组件。 可以在单晶化合物半导体材料内形成适于接收辐射能的光学检测器部件。 电致变色开关可以光学耦合到光学检测器部件。

公开(公告)号：US20030010992A1

公开(公告)日：2003-01-16

申请号：US09904841

申请日：2001-07-16

Applicant: MOTOROLA, INC.

Inventor： Robert Lempkowski ,  Daniel Gamota

IPC: H01L027/15

CPC classification number: H01S5/026 ,  H01L27/15 ,  H01S5/021

Abstract: A semiconductor structure for providing cross-point switch functionality includes a monocrystalline silicone substrate, and an amorphous oxide material overlying the monocrystalline silicone substrate. A monocrystalline perovskite oxide material overlies the amorphous oxide material, and a monocrystalline compound semiconductor material overlies the monocrystalline perovskite oxide material. The monocrystalline compound semiconductor material includes an optical source component operable to generate a radiant energy transmission. A diffraction grating is optically coupled with the optical source component and has a configuration for passing the radiant energy transmission in a predetermined radiant energy intensity pattern, forming a plurality of replications of the radiant energy transmission. The semiconductor structure further includes at least one optical switch component optically coupled to the diffraction grating, where each optical switch component corresponds to at least one of the replicated radiant energy transmissions, and has a first state for passing the at least one replicated radiant energy transmission, and a second state prohibiting passage of the at least one replicated radiant energy transmission.

Abstract translation: 用于提供交叉点开关功能的半导体结构包括单晶硅衬底和覆盖单晶硅衬底的无定形氧化物材料。 单晶钙钛矿氧化物材料覆盖无定形氧化物材料，单晶化合物半导体材料覆盖单晶钙钛矿氧化物材料。 单晶化合物半导体材料包括可用于产生辐射能传输的光源组件。 衍射光栅与光源部件光学耦合，并且具有用于以预定的辐射能量强度图案传递辐射能量传输的结构，形成辐射能传输的多个重复。 半导体结构还包括光学耦合到衍射光栅的至少一个光学开关部件，其中每个光学开关部件对应于复制的辐射能量传输中的至少一个，并且具有用于使至少一个复制的辐射能量传输 以及禁止所述至少一个复制的辐射能量传输的通过的第二状态。

公开(公告)号：US20030183915A1

公开(公告)日：2003-10-02

申请号：US10114488

申请日：2002-04-02

Applicant: Motorola, Inc.

Inventor： Steven Scheifers ,  Daniel Gamota ,  Andrew Skipor ,  Krishna Kalyanasundaram

IPC: H01L023/552 ,  H01L023/26

CPC classification number: H01L51/107 ,  H01L51/0516 ,  H01L51/524 ,  H01L51/5243 ,  H01L51/5253 ,  H01L51/5259 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device comprising organic semiconductor material (14) has one or more barrier layers (16) disposed at least partially thereabout to protect the organic semiconductor material (14) from environment-driven changes that typically lead to inoperability of a corresponding device. If desired, the barrier layer can be comprised of partially permeable material that allows some substances therethrough to thereby effect disabling of the encapsulated organic semiconductor device after a substantially predetermined period of time. Getterers (141) may also be used to protect, at least for a period of time, such organic semiconductor material.

Abstract translation: 包括有机半导体材料（14）的半导体器件具有至少部分设置在其周围的一个或多个阻挡层（16），以保护有机半导体材料（14）免受通常导致相应器件的不可操作性的环境驱动的变化。 如果需要，阻挡层可以由允许一些物质通过其的部分渗透性材料构成，从而在基本上预定的时间段之后使封装的有机半导体器件失效。 乞丐（141）也可用于至少在一段时间内保护这种有机半导体材料。

公开(公告)号：US20030020091A1

公开(公告)日：2003-01-30

申请号：US09911691

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Aroon Tungare ,  Daniel Gamota ,  George Valliath

IPC: H01L029/04

CPC classification number: H01S5/0261 ,  H01L27/15 ,  H01L31/1035 ,  H01S5/021 ,  H01S5/0262 ,  H01S5/183 ,  H01S2301/173

Abstract: A system for use as an optical switch is disclosed. The system includes light emitting devices formed using high quality epitaxial layers of compound semiconductor materials overlying an accommodating buffer layer on a silicon wafer. The system also includes a tunable electro-optic substrate over the compound semiconductor material, and a polarization beam splitter over the electro-optic substrate. The tunable electro-optic substrate is used to change the polarization of the light emitted from the light emitting devices. The polarization beam splitter is used to guide the light beam, depending on the polarization, in two different directions. The system, together, acts as an optical switch.

Abstract translation: 公开了一种用作光开关的系统。 该系统包括使用覆盖硅晶片上的容纳缓冲层的化合物半导体材料的高质量外延层形成的发光器件。 该系统还包括在化合物半导体材料上的可调电光基底，以及在电光基底上的偏振分束器。 可调谐电光基板用于改变从发光器件发射的光的偏振。 偏振分束器用于根据极化在两个不同的方向上引导光束。 该系统一起作为光开关。

公开(公告)号：US20040215409A1

公开(公告)日：2004-10-28

申请号：US10420616

申请日：2003-04-22

Applicant: MOTOROLA, INC.

Inventor： Hakeem Adewole ,  Paul Brazis ,  Daniel Gamota ,  Jie Zhang

IPC: G06F019/00

CPC classification number: G06K19/0723 ,  G06K19/0717 ,  G06K19/07703

Abstract: An organic semiconductor product state monitor attached to a product receives a product usefulness input, which, along with the product predetermined usefulness limit, is used to determine an indicator command to indicate a state of usefulness of the product. An organic circuit is formed and placed on a product with a power supply to control the circuit operation.

Abstract translation: 附加到产品的有机半导体产品状态监视器接收产品有用性输入，其与产品预定有用限制一起用于确定指示产品有用状态的指示符命令。 形成有机电路并放置在具有电源的产品上以控制电路操作。

公开(公告)号：US20040048445A1

公开(公告)日：2004-03-11

申请号：US10236619

申请日：2002-09-06

Applicant: Motorola, Inc.

Inventor： Marc Chason ,  Paul Brazis ,  Krishna Kalyanasundaram ,  Daniel Gamota

IPC: H01L021/76

CPC classification number: H01L21/6836 ,  H01L21/78 ,  H01L23/5387 ,  H01L24/32 ,  H01L24/48 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2224/05599 ,  H01L2224/32145 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01049 ,  H01L2924/01058 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A wafer (10) having integrated circuit elements formed therein is thinned and a first carrier (41) is adhered thereto. The first carrier (41) facilitates handling of the thinned wafer (30). A second carrier (51) is then adhered as well and the various integrated circuits are singulated to yield a plurality of thinned die (81). Once the thinned die is mounted to a desired substrate (91), the first carrier (41) is readily removed. In one embodiment, the first carrier (41) has an adhesive that becomes less adherent when exposed to a predetermined stimulus (such as a given temperature range or a given frequency range of photonic energy). Such thinned die (or modules containing such die) are readily amenable to stacking in order to achieve significantly increased circuit densities.

公开(公告)号：US20030015705A1

公开(公告)日：2003-01-23

申请号：US09905980

申请日：2001-07-17

Applicant: Motorola, Inc.

Inventor： Marc Chason ,  Daniel Gamota ,  Robert Lempkowski

IPC: H01L029/04 ,  H01L031/036

CPC classification number: H01L27/142 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L27/14 ,  H01S5/021 ,  H01S5/0261 ,  H01S5/042 ,  H01S2301/173 ,  Y02E10/50

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。

公开(公告)号：US20040232431A1

公开(公告)日：2004-11-25

申请号：US10878354

申请日：2004-06-29

Applicant: MOTOROLA, INC.

Inventor： Robert Lempkowski ,  Daniel Gamota

IPC: H01L031/12 ,  H01L021/00

CPC classification number: H01S5/026 ,  H01L27/15 ,  H01S5/021

Abstract: A semiconductor structure for providing cross-point switch functionality includes a monocrystalline silicone substrate, and an amorphous oxide material overlying the monocrystalline silicone substrate. A monocrystalline perovskite oxide material overlies the amorphous oxide material, and a monocrystalline compound semiconductor material overlies the monocrystalline perovskite oxide material. The monocrystalline compound semiconductor material includes an optical source component operable to generate a radiant energy transmission. A diffraction grating is optically coupled with the optical source component and has a configuration for passing the radiant energy transmission in a predetermined radiant energy intensity pattern, forming a plurality of replications of the radiant energy transmission. The semiconductor structure further includes at least one optical switch component optically coupled to the diffraction grating, where each optical switch component corresponds to at least one of the replicated radiant energy transmissions, and has a first state for passing the at least one replicated radiant energy transmission, and a second state prohibiting passage of the at least one replicated radiant energy transmission.

Abstract translation: 用于提供交叉点开关功能的半导体结构包括单晶硅衬底和覆盖单晶硅衬底的无定形氧化物材料。 单晶钙钛矿氧化物材料覆盖无定形氧化物材料，单晶化合物半导体材料覆盖单晶钙钛矿氧化物材料。 单晶化合物半导体材料包括可用于产生辐射能传输的光源组件。 衍射光栅与光源部件光学耦合，并且具有用于以预定的辐射能量强度图案传递辐射能量传输的结构，形成辐射能传输的多个重复。 半导体结构还包括光学耦合到衍射光栅的至少一个光学开关部件，其中每个光学开关部件对应于复制的辐射能量传输中的至少一个，并且具有用于使至少一个复制的辐射能量传输 以及禁止所述至少一个复制的辐射能量传输的通过的第二状态。

公开(公告)号：US20030021549A1

公开(公告)日：2003-01-30

申请号：US09911472

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Marc Chason ,  Daniel Gamota

IPC: G02B006/42 ,  G02B006/12

CPC classification number: G02B6/4204

Abstract: High quality epitaxial layers of monocrystalline materials can be grown layered monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. Formation of a compliant substrate may include utilizing surfactant-enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. The layered monocrystalline substrates allow for the fabrication of at least one optical device with an insulating material laid over it, wherein the insulating material provides an optical aperture for use with the optical device. A conductive material can be deposited within the insulating material, and an electro-rheological lens can be inserted within the insulating material aperture, while being in contact with the conductive material.

Abstract translation: 通过形成用于生长单晶层的顺应性衬底，可以生长单晶材料的高质量外延层，以生长层状单晶衬底，例如大的硅晶片。 顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 层状单晶衬底允许制造具有铺设在其上的绝缘材料的至少一个光学器件，其中绝缘材料提供用于光学器件的光学孔。 导电材料可以沉积在绝缘材料内，并且电流变透镜可以在与导电材料接触的同时插入绝缘材料孔内。

公开(公告)号：US20030020078A1

公开(公告)日：2003-01-30

申请号：US09911444

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Tomasz Klosowiak ,  Kevin Jelley ,  George Valliath ,  Barbara Foley Barenburg ,  Daniel Gamota

IPC: H01L021/00 ,  H01L033/00 ,  H01L027/15

CPC classification number: H01L27/15 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8221 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/0688 ,  H01L2924/00011 ,  H01S5/021 ,  H01S5/0261 ,  H01S2301/173 ,  H01L2224/80001

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Optical processing layers can be placed on monocrystalline layers to process photons produced in the monocrystalline layers.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 光学处理层可以放置在单晶层上以处理在单晶层中产生的光子。