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公开(公告)号：US07581314B2
公开(公告)日：2009-09-01
申请号：US11358823
申请日：2006-02-21
申请人： Hariklia Deligianni , Panayotis Andricacos , L. Paivikki Buchwalter , John M. Cotte , Christopher Jahnes , Mahadevaiyer Krishnan , John H. Magerlein , Kenneth Stein , Richard P. Volant , James A. Tornello , Jennifer Lund
发明人： Hariklia Deligianni , Panayotis Andricacos , L. Paivikki Buchwalter , John M. Cotte , Christopher Jahnes , Mahadevaiyer Krishnan , John H. Magerlein , Kenneth Stein , Richard P. Volant , James A. Tornello , Jennifer Lund
IPC分类号： H01K3/10
CPC分类号： H01H59/0009 , H01H2001/0052 , Y10T29/49156 , Y10T29/49165 , Y10T29/49204
摘要： A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400° C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.
摘要翻译： 描述了提供有作为铜电极的氧阻隔的贵金属触点的半导体微机电系统（MEMS）开关。 MEMS开关完全集成到CMOS半导体制造线中。 集成技术，材料和工艺完全兼容铜芯片金属化工艺，通常是低成本和低温工艺（低于400℃）。 MEMS开关包括：在空腔内的可移动光束，可移动光束在光束的一端或两端锚定到空腔的壁; 嵌入可移动光束中的第一电极; 以及第二电极，其嵌入在所述空腔的壁中并且面向所述第一电极，其中所述第一和第二电极分别被所述贵金属接触物覆盖。
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公开(公告)号：US07202764B2
公开(公告)日：2007-04-10
申请号：US10604278
申请日：2003-07-08
申请人： Hariklia Deligianni , Panayotis Andricacos , L. Paivikki Buchwalter , John M. Cotte , Christopher Jahnes , Mahadevaiyer Krishnan , John H. Magerlein , Kenneth Stein , Richard P. Volant , James A. Tornello , Jennifer Lund
发明人： Hariklia Deligianni , Panayotis Andricacos , L. Paivikki Buchwalter , John M. Cotte , Christopher Jahnes , Mahadevaiyer Krishnan , John H. Magerlein , Kenneth Stein , Richard P. Volant , James A. Tornello , Jennifer Lund
IPC分类号： H01H51/22
CPC分类号： H01H59/0009 , H01H2001/0052 , Y10T29/49156 , Y10T29/49165 , Y10T29/49204
摘要： A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400° C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.
摘要翻译： 描述了提供有作为铜电极的氧阻隔的贵金属触点的半导体微机电系统（MEMS）开关。 MEMS开关完全集成到CMOS半导体制造线中。 集成技术，材料和工艺完全兼容铜芯片金属化工艺，通常是低成本和低温工艺（低于400℃）。 MEMS开关包括：在空腔内的可移动光束，可移动光束在光束的一端或两端锚定到空腔的壁; 嵌入可移动光束中的第一电极; 以及第二电极，其嵌入在所述空腔的壁中并且面向所述第一电极，其中所述第一和第二电极分别被所述贵金属接触物覆盖。
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公开(公告)号：US20060164194A1
公开(公告)日：2006-07-27
申请号：US11358823
申请日：2006-02-21
申请人： Hariklia Deligianni , Panayotis Andricacos , L. Paivikki Buchwalter , John Cotte , Christopher Jahnes , Mahadevaiyer Krishnan , John Magerlein , Kenneth Stein , Richard Volant , James Tornello , Jennifer Lund
发明人： Hariklia Deligianni , Panayotis Andricacos , L. Paivikki Buchwalter , John Cotte , Christopher Jahnes , Mahadevaiyer Krishnan , John Magerlein , Kenneth Stein , Richard Volant , James Tornello , Jennifer Lund
IPC分类号： H01H51/22
CPC分类号： H01H59/0009 , H01H2001/0052 , Y10T29/49156 , Y10T29/49165 , Y10T29/49204
摘要： A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400° C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.
摘要翻译： 描述了提供有作为铜电极的氧阻隔的贵金属触点的半导体微机电系统（MEMS）开关。 MEMS开关完全集成到CMOS半导体制造线中。 集成技术，材料和工艺完全兼容铜芯片金属化工艺，通常是低成本和低温工艺（低于400℃）。 MEMS开关包括：在空腔内的可移动光束，可移动光束在光束的一端或两端锚定到空腔的壁; 嵌入可移动光束中的第一电极; 以及第二电极，其嵌入在所述空腔的壁中并且面向所述第一电极，其中所述第一和第二电极分别被所述贵金属接触物覆盖。
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公开(公告)号：US20050007217A1
公开(公告)日：2005-01-13
申请号：US10604278
申请日：2003-07-08
申请人： Hariklia Deligianni , Panayotis Andricacos , L. Buchwalter , John Cotte , Christopher Jahnes , Mahadevaiyer Krishnan , John Magerlein , Kenneth Stein , Richard Volant , James Tornello , Jennifer Lund
发明人： Hariklia Deligianni , Panayotis Andricacos , L. Buchwalter , John Cotte , Christopher Jahnes , Mahadevaiyer Krishnan , John Magerlein , Kenneth Stein , Richard Volant , James Tornello , Jennifer Lund
CPC分类号： H01H59/0009 , H01H2001/0052 , Y10T29/49156 , Y10T29/49165 , Y10T29/49204
摘要： A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400°0 C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.
摘要翻译： 描述了提供有作为铜电极的氧阻隔的贵金属触点的半导体微机电系统（MEMS）开关。 MEMS开关完全集成到CMOS半导体制造线中。 集成技术，材料和工艺完全兼容铜芯片金属化工艺，通常是低成本和低温工艺（低于400°C）。 MEMS开关包括：在空腔内的可移动光束，可移动光束在光束的一端或两端锚定到空腔的壁; 嵌入可移动光束中的第一电极; 以及第二电极，其嵌入在所述空腔的壁中并且面向所述第一电极，其中所述第一和第二电极分别被所述贵金属接触物覆盖。
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公开(公告)号：US20060076685A1
公开(公告)日：2006-04-13
申请号：US11265302
申请日：2005-11-03
申请人： Panayotis Andricacos , Shyng-Tsong Chen , John Cotte , Hariklia Deligianni , Mahadevaiyer Krishnan , Wei-Tsu Tseng , Philippe Vereecken
发明人： Panayotis Andricacos , Shyng-Tsong Chen , John Cotte , Hariklia Deligianni , Mahadevaiyer Krishnan , Wei-Tsu Tseng , Philippe Vereecken
IPC分类号： H01L23/48
CPC分类号： H01L21/76846 , H01L21/2885 , H01L21/6708 , H01L21/76849 , H01L21/7685 , H01L21/76874 , H01L21/76883
摘要： Patterned copper structures are fabricated by selectively capping the copper employing selective etching and/or selective electroplating in the presence of a liner material. Apparatus for addressing the problem of an increased resistive path as electrolyte during electroetching and/or electroplating flows from the wafer edge inwards is provided.
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公开(公告)号：US20060163083A1
公开(公告)日：2006-07-27
申请号：US11038236
申请日：2005-01-21
申请人： Panayotis Andricacos , Donald Canaperi , Emanuel Cooper , John Cotte , Hariklia Deligianni , Laertis Economikos , Daniel Edelstein , Silvia Franz , Balasubramanian Pranatharthiharan , Mahadevaiyer Krishnan , Andrew Mansson , Erick Walton , Alan West , Caliopi Andricacos
发明人： Panayotis Andricacos , Donald Canaperi , Emanuel Cooper , John Cotte , Hariklia Deligianni , Laertis Economikos , Daniel Edelstein , Silvia Franz , Balasubramanian Pranatharthiharan , Mahadevaiyer Krishnan , Andrew Mansson , Erick Walton , Alan West , Caliopi Andricacos
IPC分类号： B23H3/00
CPC分类号： C25F3/02 , B23H5/08 , C09G1/04 , H01L21/32125
摘要： Methods and compositions for electro-chemical-mechanical polishing (e-CMP) of silicon chip interconnect materials, such as copper, are provided. The methods include the use of compositions according to the invention in combination with pads having various configurations.
摘要翻译： 提供了诸如铜之类的硅芯片互连材料的电化学机械抛光（e-CMP）的方法和组合物。 所述方法包括使用根据本发明的组合物与具有各种构型的垫组合。
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公开(公告)号：US20050001325A1
公开(公告)日：2005-01-06
申请号：US10611931
申请日：2003-07-03
申请人： Panayotis Andricacos , Shyng-Tsong Chen , John Cotte , Hariklia Deligianni , Mahadevaiyer Krishnan , Wei-Tsu Tseng , Philippe Vereecken
发明人： Panayotis Andricacos , Shyng-Tsong Chen , John Cotte , Hariklia Deligianni , Mahadevaiyer Krishnan , Wei-Tsu Tseng , Philippe Vereecken
IPC分类号： H01L21/00 , H01L21/288 , H01L21/768 , H01L23/48
CPC分类号： H01L21/76846 , H01L21/2885 , H01L21/6708 , H01L21/76849 , H01L21/7685 , H01L21/76874 , H01L21/76883
摘要： Patterned copper structures are fabricated by selectively capping the copper employing selective etching and/or selective electroplating in the presence of a liner material. Apparatus for addressing the problem of an increased resistive path as electrolyte during electroetching and/or electroplating flows from the wafer edge inwards is provided.
摘要翻译： 通过在衬垫材料的存在下使用选择性蚀刻和/或选择性电镀选择性地封盖铜来制造图案化的铜结构。 提供了用于解决在电蚀和/或电镀过程中作为电解质增加的电阻路径从晶片边缘向内流动的问题的装置。
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公开(公告)号：US20100051474A1
公开(公告)日：2010-03-04
申请号：US12548893
申请日：2009-08-27
申请人： Panayotis C. Andricacos , Caliopi Andricacos , Donald F. Canaperi , Emanuel I. Cooper , John M. Cotte , Hariklia Deligianni , Laertis Economikos , Daniel C. Edelstein , Silvia Franz , Balasubramanian Pranatharthiharan , Mahadevaiyer Krishnan , Andrew P. Mansson , Erick G. Walton , Alan C. West
发明人： Panayotis C. Andricacos , Caliopi Andricacos , Donald F. Canaperi , Emanuel I. Cooper , John M. Cotte , Hariklia Deligianni , Laertis Economikos , Daniel C. Edelstein , Silvia Franz , Balasubramanian Pranatharthiharan , Mahadevaiyer Krishnan , Andrew P. Mansson , Erick G. Walton , Alan C. West
IPC分类号： B23H5/06
CPC分类号： C25F3/02 , B23H5/08 , C09G1/04 , H01L21/32125
摘要： Methods and compositions for electro-chemical-mechanical polishing (e-CMP) of silicon chip interconnect materials, such as copper, are provided. The methods include the use of compositions according to the invention in combination with pads having various configurations.
摘要翻译： 提供了诸如铜之类的硅芯片互连材料的电化学机械抛光（e-CMP）的方法和组合物。 所述方法包括使用根据本发明的组合物与具有各种构型的垫组合。
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公开(公告)号：US07190079B2
公开(公告)日：2007-03-13
申请号：US11265302
申请日：2005-11-03
申请人： Panayotis C. Andricacos , Shyng-Tsong Chen , John M. Cotte , Hariklia Deligianni , Mahadevaiyer Krishnan , Wei-Tsu Tseng , Philippe M. Vereecken
发明人： Panayotis C. Andricacos , Shyng-Tsong Chen , John M. Cotte , Hariklia Deligianni , Mahadevaiyer Krishnan , Wei-Tsu Tseng , Philippe M. Vereecken
CPC分类号： H01L21/76846 , H01L21/2885 , H01L21/6708 , H01L21/76849 , H01L21/7685 , H01L21/76874 , H01L21/76883
摘要： Patterned copper structures are fabricated by selectively capping the copper employing selective etching and/or selective electroplating in the presence of a liner material. Apparatus for addressing the problem of an increased resistive path as electrolyte during electroetching and/or electroplating flows from the wafer edge inwards is provided.
摘要翻译： 通过在衬垫材料的存在下使用选择性蚀刻和/或选择性电镀选择性地封盖铜来制造图案化的铜结构。 提供了用于解决在电蚀和/或电镀过程中作为电解质增加的电阻路径从晶片边缘向内流动的问题的装置。
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公开(公告)号：US07008871B2
公开(公告)日：2006-03-07
申请号：US10611931
申请日：2003-07-03
申请人： Panayotis C. Andricacos , Shyng-Tsong Chen , John M. Cotte , Hariklia Deligianni , Mahadevaiyer Krishnan , Wei-Tsu Tseng , Philippe M. Vereecken
发明人： Panayotis C. Andricacos , Shyng-Tsong Chen , John M. Cotte , Hariklia Deligianni , Mahadevaiyer Krishnan , Wei-Tsu Tseng , Philippe M. Vereecken
IPC分类号： H01L21/44
CPC分类号： H01L21/76846 , H01L21/2885 , H01L21/6708 , H01L21/76849 , H01L21/7685 , H01L21/76874 , H01L21/76883
摘要： Patterned copper structures are fabricated by selectively capping the copper employing selective etching and/or selective electroplating in the presence of a liner material. Apparatus for addressing the problem of an increased resistive path as electrolyte during electroetching and/or electroplating flows from the wafer edge inwards is provided.
摘要翻译： 通过在衬垫材料的存在下使用选择性蚀刻和/或选择性电镀选择性地封盖铜来制造图案化的铜结构。 提供了用于解决在电蚀和/或电镀过程中作为电解质增加的电阻路径从晶片边缘向内流动的问题的装置。
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