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104 条记录 (耗时 0.04 秒)

    Apparatus for accurate and efficient quality and reliability evaluation of micro electromechanical systems
    7.
    发明授权
    Apparatus for accurate and efficient quality and reliability evaluation of micro electromechanical systems 失效
    微机电系统的准确高效的质量和可靠性评估装置

    公开(公告)号：US07602265B2

    公开(公告)日：2009-10-13

    申请号：US11163485

    申请日：2005-10-20

    申请人： Hariklia Deligianni ,  Robert D. Edwards ,  Thomas J. Fleischman ,  Robert A. Groves ,  Charles J. Montrose ,  Richard P. Volant ,  Ping-Chuan Wang

    发明人： Hariklia Deligianni ,  Robert D. Edwards ,  Thomas J. Fleischman ,  Robert A. Groves ,  Charles J. Montrose ,  Richard P. Volant ,  Ping-Chuan Wang

    IPC分类号： H01H51/22

    CPC分类号： H01H59/0009

    摘要： The present invention provides multiple test structures for performing reliability and qualification tests on MEMS switch devices. A Test structure for contact and gap characteristic measurements is employed having a serpentine layout simulates rows of upper and lower actuation electrodes. A cascaded switch chain test is used to monitor process defects with large sample sizes. A ring oscillator is used to measure switch speed and switch lifetime. A resistor ladder test structure is configured having each resistor in series with a switch to be tested, and having each switch-resistor pair electrically connected in parallel. Serial/parallel test structures are proposed with MEMS switches working in tandem with switches of established technology. A shift register is used to monitor the open and close state of the MEMS switches. Pull-in voltage, drop-out voltage, activation leakage current, and switch lifetime measurements are performed using the shift register.

    摘要翻译： 本发明提供用于在MEMS开关装置上执行可靠性和鉴定测试的多个测试结构。 采用具有蛇形布局的接触和间隙特性测量的测试结构来模拟上下驱动电极的行。 级联交换链测试用于监控大样本量的过程缺陷。 环形振荡器用于测量开关速度和开关寿命。 电阻梯形测试结构被配置为具有与要测试的开关串联的每个电阻器，并且每个开关电阻器对并联电连接。 提出了串联/并联测试结构，其中MEMS开关与成熟技术的开关串联工作。 移位寄存器用于监测MEMS开关的开启和关闭状态。 使用移位寄存器执行拉入电压，掉电电压，启动漏电流和开关寿命测量。

    Method of fabricating MIM capacitor with the encapsulated metal structure serving as the lower plate
    9.
    发明授权
    Method of fabricating MIM capacitor with the encapsulated metal structure serving as the lower plate 失效
    制造具有封装金属结构的MIM电容器作为下板的方法

    公开(公告)号：US06825075B2

    公开(公告)日：2004-11-30

    申请号：US10757214

    申请日：2004-01-14

    申请人： Kevin S. Petrarca ,  Donald Canaperi ,  Mahadevaiyer Krishnan ,  Kenneth Jay Stein ,  Richard P. Volant

    发明人： Kevin S. Petrarca ,  Donald Canaperi ,  Mahadevaiyer Krishnan ,  Kenneth Jay Stein ,  Richard P. Volant

    IPC分类号： H01L218242

    CPC分类号： H01L21/76849 ,  H01L21/76834 ,  H01L21/7684 ,  H01L28/60

    摘要： A method is described for fabricating an encapsulated metal structure in a feature formed in a substrate. The sidewalls and bottom of the feature are covered by a barrier layer and the feature is filled with metal, preferably by electroplating. A recess is formed in the metal, and an additional barrier layer is deposited, covering the top surface of the metal and contacting the first barrier layer. The additional barrier layer is planarized, preferably by chemical-mechanical polishing. The method may be used in fabricating a MIM capacitor, with the encapsulated metal structure serving as the lower plate of the capacitor. A second substrate layer is deposited on the top surface of the substrate, with an opening overlying the encapsulated metal structure. A dielectric layer is deposited in the opening, covering the encapsulated metal structure at the bottom thereof. An additional layer, serving as the upper plate of the capacitor, is deposited to cover the dielectric layer and to fill the opening. The dielectric layer and the additional layer are planarized, preferably by CMP.

    摘要翻译： 描述了一种在衬底中形成的特征中制造封装金属结构的方法。 特征的侧壁和底部被阻挡层覆盖，并且该特征被金属填充，优选地通过电镀。 在金属中形成凹部，并且沉积附加的阻挡层，覆盖金属的顶表面并与第一阻挡层接触。 优选通过化学机械抛光将附加阻挡层平坦化。 该方法可用于制造MIM电容器，其中封装的金属结构用作电容器的下板。 第二衬底层沉积在衬底的顶表面上，具有覆盖封装的金属结构的开口。 介电层沉积在开口中，覆盖其底部的封装金属结构。 作为电容器的上板的附加层被沉积以覆盖电介质层并填充开口。 介电层和附加层优选通过CMP平坦化。

    Encapsulated metal structures for semiconductor devices and MIM capacitors including the same
    10.
    发明授权
    Encapsulated metal structures for semiconductor devices and MIM capacitors including the same 有权
    用于半导体器件和包括其的MIM电容器的封装金属结构

    公开(公告)号：US06756624B2

    公开(公告)日：2004-06-29

    申请号：US10409010

    申请日：2003-04-07

    申请人： Kevin S. Petrarca ,  Donald Canaperi ,  Mahadevaiyer Krishnan ,  Kenneth Jay Stein ,  Richard P. Volant

    发明人： Kevin S. Petrarca ,  Donald Canaperi ,  Mahadevaiyer Krishnan ,  Kenneth Jay Stein ,  Richard P. Volant

    IPC分类号： H01L27108

    CPC分类号： H01L21/76849 ,  H01L21/76834 ,  H01L21/7684 ,  H01L28/60

    摘要： A method is described for fabricating an encapsulated metal structure in a feature formed in a substrate. The sidewalls and bottom of the feature are covered by a barrier layer and the feature is filled with metal, preferably by electroplating. A recess is formed in the metal, and an additional barrier layer is deposited, covering the top surface of the metal and contacting the first barrier layer. The additional barrier layer is planarized, preferably by chemical-mechanical polishing. The method may be used in fabricating a MIM capacitor, with the encapsulated metal structure serving as the lower plate of the capacitor. A second substrate layer is deposited on the top surface of the substrate, with an opening overlying the encapsulated metal structure. A dielectric layer is deposited in the opening, covering the encapsulated metal structure at the bottom thereof. An additional layer, serving as the upper plate of the capacitor, is deposited to cover the dielectric layer and to fill the opening. The dielectric layer and the additional layer are planarized, preferably by CMP.

    摘要翻译： 描述了一种在衬底中形成的特征中制造封装金属结构的方法。 特征的侧壁和底部被阻挡层覆盖，并且该特征被金属填充，优选地通过电镀。 在金属中形成凹部，并且沉积附加的阻挡层，覆盖金属的顶表面并与第一阻挡层接触。 优选通过化学机械抛光将附加阻挡层平坦化。 该方法可用于制造MIM电容器，其中封装的金属结构用作电容器的下板。 第二衬底层沉积在衬底的顶表面上，具有覆盖封装的金属结构的开口。 介电层沉积在开口中，覆盖其底部的封装金属结构。 作为电容器的上板的附加层被沉积以覆盖电介质层并填充开口。 介电层和附加层优选通过CMP平坦化。