公开(公告)号：US5143865A

公开(公告)日：1992-09-01

申请号：US731392

申请日：1991-07-17

申请人： Makoto Hideshima ,  Tetsujiro Tsunoda ,  Shinjiro Kojima ,  Masaru Ando

发明人： Makoto Hideshima ,  Tetsujiro Tsunoda ,  Shinjiro Kojima ,  Masaru Ando

IPC分类号： H01L21/60 ,  H01L23/485 ,  H01L23/532

CPC分类号： H01L24/10 ,  H01L23/53209 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/13 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/45124 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/15787 ,  Y10S438/928

摘要： A semiconductor element is formed in a semiconductor substrate. An electrode wiring pattern which is connected to the active region and contains aluminum as the main component is formed on the main surface of said semiconductor substrate. A metal bump is formed on the electrode wiring pattern. The metal bump contains zinc of 1 to 10% in mass percentage in addition to at least one element selected from a group consisting of tin, lead and aluminum a second metal bump is formed having a lower melting point than that of first bump. The second bump contains lead, tin and at least one of silver and copper.

摘要翻译： 在半导体衬底中形成半导体元件。 在所述半导体衬底的主表面上形成连接到有源区并含有铝作为主要成分的电极布线图案。 在电极布线图案上形成金属凸块。 除了选自由锡，铅和铝组成的组中的至少一种元素之外，金属凸块还含有质量百分比为1〜10％的锌，形成熔点低于第一凸点的第二金属凸块。 第二个凸起包含铅，锡和至少一种银和铜。

公开(公告)号：US4918514A

公开(公告)日：1990-04-17

申请号：US173458

申请日：1988-03-25

申请人： Hideo Matsuda ,  Yasunori Usui ,  Shinjiro Kojima ,  Masaru Ando

发明人： Hideo Matsuda ,  Yasunori Usui ,  Shinjiro Kojima ,  Masaru Ando

IPC分类号： H01L21/52 ,  H01L23/051 ,  H01L23/48

CPC分类号： H01L23/051 ,  H01L24/72 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/1301

摘要： A soft metal plate having substantially equal hardness as emitter electrodes formed of soft metal is disposed between the emitter electrodes and a heat buffer metal plate formed of hard metal, and pressure applied to the emitter electrodes is shared by the soft metal plate, so as to reduce the thermal fatigue of the emitter electrodes.

公开(公告)号：US4924351A

公开(公告)日：1990-05-08

申请号：US334771

申请日：1989-04-10

申请人： Toshihiro Kato ,  Shinjiro Kojima ,  Takao Emoto ,  Hiroshi Matsumoto

发明人： Toshihiro Kato ,  Shinjiro Kojima ,  Takao Emoto ,  Hiroshi Matsumoto

IPC分类号： H01L23/24 ,  H01L23/31 ,  H01L23/433 ,  H01L23/495 ,  H01L33/00

CPC分类号： H01L23/24 ,  H01L23/3107 ,  H01L23/3135 ,  H01L23/4334 ,  H01L23/49503 ,  H01L23/49575 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/181 ,  H01L2924/1815

摘要： A packaged semiconductor device having a semiconductor chip mounted on a bed part, a first molded layer which seals the bed part and the semiconductor chip such that the back of the bed part is exposed, a heat sink under the exposed back of the bed part and with a prescribed distance between it and the back of the bed part a second molded layer which is formed such that it covers the outside of the heat sink and the first molded layer, and also fills the gap between the exposed surface of the bed part and the heat sink, and leads which are disposed such that they pass through the second molded layer and their ends are in the first molded layer, and which are connected via bonding wires to the internal terminals of the semiconductor chip.

摘要翻译： 一种具有安装在床部上的半导体芯片的封装半导体器件，密封所述床部分和所述半导体芯片以使得所述床部分的背面露出的第一模制层，在所述床部分暴露背面的散热片，以及 在其与床部分的背面之间具有规定的距离，第二模制层被形成为使得其覆盖散热器和第一模制层的外部，并且还填充床部分的暴露表面和 散热器和引线，它们被布置成使得它们通过第二模制层，并且它们的端部在第一模制层中，并且通过接合线连接到半导体芯片的内部端子。

公开(公告)号：US5371406A

公开(公告)日：1994-12-06

申请号：US97026

申请日：1993-07-27

申请人： Shinjiro Kojima ,  Seiichi Hirata

发明人： Shinjiro Kojima ,  Seiichi Hirata

IPC分类号： H01L21/60 ,  H01L23/495 ,  H01L23/48 ,  H01L29/46 ,  H01L29/62 ,  H01L29/64

CPC分类号： H01L24/50 ,  H01L23/49524 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01065 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/181

摘要： According to this invention, there is provided a semiconductor device including a TAB tape having through hole for an element, a plurality of leads integrally formed on the TAB tape, a semiconductor element connected to one end of each of the leads through a bump formed in the through hole for the element, a plurality of lead frames each connected to the other end of a corresponding one of the leads, and a mold resin sealed to cover the most part of the TAB tape, the leads, the semiconductor element, and the lead frames, wherein connection portions between the leads and the lead frames are linearly formed at equal pitches perpendicularly to an outer periphery of the semiconductor element opposite to the connection portions. Each of portions near positions where the leads are respectively connected to the lead frames is formed in a gull-wing shape. The straight end portions of the lead frames extend from ends of the lead frames to flexing points of the lead frames, and the lengths of the straight end portions are set at least 0.3 mm or more. In the mold resin, the thickness of a resin positioned at the upper portion of the semiconductor element is set to be smaller than that of a resin positioned at the lower portion of the semiconductor element.

摘要翻译： 根据本发明，提供了一种半导体器件，其包括具有用于元件的通孔的TAB带，一体地形成在TAB带上的多个引线，半导体元件，该半导体元件通过形成在所述引脚中的凸块连接到每个引线的一端 用于元件的通孔，多个引线框架，每个引线框架各自连接到相应的一个引线的另一端;以及模制树脂，其被密封以覆盖TAB带的大部分，引线，半导体元件和 引线框架，其中引线和引线框架之间的连接部分以与连接部分相对的半导体元件的外周垂直的等间距线性地形成。 引线分别与引线框架连接的位置附近的各部分形成为鸥翼形状。 引线框架的直端部从引线框架的端部延伸到引线框架的弯曲点，并且直端部的长度设定为至少0.3mm以上。 在模制树脂中，位于半导体元件上部的树脂的厚度被设定为小于位于半导体元件的下部的树脂的厚度。

公开(公告)号：US5295044A

公开(公告)日：1994-03-15

申请号：US950899

申请日：1992-09-25

申请人： Kouji Araki ,  Shinjiro Kojima ,  Wataru Takahashi

发明人： Kouji Araki ,  Shinjiro Kojima ,  Wataru Takahashi

IPC分类号： H01L25/00 ,  H01L23/24 ,  H01L23/538 ,  H01L25/065 ,  H05K7/02 ,  H05K7/20

CPC分类号： H01L23/24 ,  H01L23/5385 ,  H01L25/0652 ,  H05K7/023 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2924/1627 ,  H01L2924/19107

摘要： A plurality of circuit boards are used and frames are attached to the circuit boards to surround the peripheral portions thereof. Since connection terminals electrically connected to the respective circuit boards are attached to the respective frames, a semiconductor device having semiconductor elements mounted at high density can be formed by stacking the first and second frames on each other and setting the respective connection terminals in contact with each other to electrically connect the circuit boards to each other.

摘要翻译： 使用多个电路板，并且将框架附接到电路板以包围其周边部分。 由于电连接到各个电路板的连接端子被附接到各个框架，所以可以通过将第一和第二框架彼此堆叠并且将各个连接端子与每个连接端子接触来形成具有以高密度安装的半导体元件的半导体器件 另外将电路板彼此电连接。

公开(公告)号：US5132997A

公开(公告)日：1992-07-21

申请号：US754908

申请日：1991-09-04

申请人： Shinjiro Kojima ,  Tadashi Utaka

发明人： Shinjiro Kojima ,  Tadashi Utaka

IPC分类号： G01N23/223 ,  G21K1/06 ,  G21K3/00

CPC分类号： G21K1/06 ,  G01N23/223 ,  G01N2223/076 ,  G21K2201/062

摘要： An X-ray spectroscopic analyzing apparatus which comprises a source of X-rays, a first analyzing crystal for diffracting the X-rays from the X-ray source, and a second analyzing crystal for diffracting the X-rays from the X-ray source and also for passing therethrough a diffracted X-ray component from the first analyzing crystal. The first and second analyzing crystals are so disposed and so positioned as to permit the diffracted X-ray components of different wavelengths to travel along a single path towards a sample to be analyzed. On an optical path extending between the X-ray source and the sample, a filtering means for cutting a portion of the X-rays which has a wavelength shorter than a predetermined wavelength.

摘要翻译： 一种X射线光谱分析装置，其包括X射线源，用于衍射来自X射线源的X射线的第一分析晶体和用于衍射来自X射线源的X射线的第二分析晶体 并且还用于从第一分析晶体穿过衍射的X射线成分。 第一和第二分析晶体如此布置并且定位成允许不同波长的衍射的X射线分量沿着单个路径朝向要分析的样品行进。 在X射线源和样品之间延伸的光路上，用于切割波长比预定波长短的X射线的一部分的滤光装置。

公开(公告)号：US5031024A

公开(公告)日：1991-07-09

申请号：US576936

申请日：1990-09-04

申请人： Yoshimasa Kudo ,  Shinjiro Kojima

发明人： Yoshimasa Kudo ,  Shinjiro Kojima

IPC分类号： H01L23/50 ,  H01L23/495

CPC分类号： H01L23/49575 ,  H01L2224/0603 ,  H01L2224/451 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/01079

摘要： A resin sealing type semiconductor apparatus includes semiconductor devices having electrodes. A plurality of leads include inner leads and outer leads, the former connected to the electrodes of the semiconductor devices by thin metal wires. A sealing resin layer covers at least the semiconductor devices and the inner leads. The outer leads, which are led out in one direction from the sealing resin layer, have two different types or more of pitches, the number of the pitches of each type being two or greater.

摘要翻译： 树脂密封型半导体装置包括具有电极（20）的半导体器件（17,18）。 多个引线包括内部引线（15,15a）和外部引线（12），前者通过细金属丝（19）连接到半导体器件（17,18）的电极（20）。 密封树脂层至少覆盖半导体器件（17,18）和内部引线（15,15a）。 从密封树脂层向一个方向引出的外部引线（12）具有两种不同类型或更多个间距，每种类型的间距数量为两个或更多。

公开(公告)号：US4958215A

公开(公告)日：1990-09-18

申请号：US384801

申请日：1989-07-25

申请人： Shinjiro Kojima ,  Hideo Matsuda ,  Masami Iwasaki ,  Yoshinari Uetake

发明人： Shinjiro Kojima ,  Hideo Matsuda ,  Masami Iwasaki ,  Yoshinari Uetake

IPC分类号： H01L29/74 ,  H01L21/52 ,  H01L23/051 ,  H01L23/48

CPC分类号： H01L23/051 ,  H01L24/72 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01043 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/1301

摘要： A press-contact flat type semiconductor device is disclosed which, without alloy-bonding a silicon pellet to a molybdenum or tungsten disc, assures a uniform press contact because a warp on the silicon pellet is largely reduced in comparison with a conventional device. A silver sheet is omitted between an anode electrode post and the silicon pellet to absorb a warp on the pellet. It is only necessary to insert a molybdenum or tungsten disc there, instead, which is thinner than a counterpart of the conventional device. Between the cathode electrode of the silicon pellet and a cathode electrode post use is made of, in the place of a conventional molybdenum foil and silver cap, an annealed soft copper cap of better malleability and, in the place of conventional molybdenum disc, an inexpensive hard copper sheet of adequate thickness and rigidity, not annealed, which can assure uniform press contact with the cathode electrode surface which oppositely confronts a gate lead connection circuit of a cathode electrode post. Since the silicon pellet is not alloy-bonded to the molybdenum or tungsten disc, it is simple and easy to form a bevelled structure, and to perform a silicone insulating rubber coating operation, so as to obtain the anode-to-cathode withstand voltage of the silicon pellet. Thus an inexpensive press-contact flat type semiconductor device of a long life can be provided which ensures more uniform press contact than a conventional semiconductor device.

公开(公告)号：US4399452A

公开(公告)日：1983-08-16

申请号：US181652

申请日：1980-08-26

申请人： Kazuyuki Nakashima ,  Youichi Araki ,  Yukio Igarashi ,  Shinjiro Kojima

发明人： Kazuyuki Nakashima ,  Youichi Araki ,  Yukio Igarashi ,  Shinjiro Kojima

IPC分类号： H01L23/04 ,  H01L23/051 ,  H01L23/16 ,  H01L23/10 ,  H01L23/24

CPC分类号： H01L23/051 ,  H01L23/16 ,  H01L24/00 ,  H01L2924/1301 ,  H01L2924/181

摘要： With a semiconductor device embodying this invention, a semiconductor element is clamped between a pair of electrodes in a housing. A hollow cylindrical explosion-proof member is so set in the housing as to enclose the semiconductor element. The hollow cylindrical explosion-proof element is prepared from soft elastic material capable of absorbing the force of the explosion of the semiconductor element.

摘要翻译： 利用体现本发明的半导体器件，将半导体元件夹在壳体中的一对电极之间。 中空圆柱形防爆构件被设置在壳体中以包围半导体元件。 中空圆柱形防爆元件由能够吸收半导体元件的爆炸力的软弹性材料制成。